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61. 发明授权

US06891744B2 Configurable nanoscale crossbar electronic circuits made by electrochemical reaction 有权
标题翻译：通过电化学反应制造的可配置的纳米级横梁电子电路
公开(公告)号：US06891744B2
公开(公告)日：2005-05-10
申请号：US10289703
申请日：2002-11-06
申请人： Yong Chen , R. Stanley Williams
发明人： Yong Chen , R. Stanley Williams
IPC分类号： G11C13/02 , G11C13/00 , H01L21/31 , H01L21/44
CPC分类号： G11C13/0009 , B82Y10/00 , G11C13/025 , G11C2213/34 , G11C2213/77 , G11C2213/81 , Y10S438/957 , Y10S977/936
摘要： Configurable electronic circuits comprise arrays of cross-points of one layer of metal/semiconductive nanoscale lines crossed by a second layer of metal/semiconductive nanoscale lines, with a configurable layer between the lines. Methods are provided for altering the thickness and/or resistance of the configurable layer by oxidation or reduction methods, employing a solid material as the configurable layer. Specifically a method is provided for configuring nanoscale devices in a crossbar array of configurable devices comprising arrays of cross-points of a first layer of nanoscale lines comprising a first metal or a first semiconductor material crossed by a second layer of nanoscale lines comprising a second metal or a second semiconductor material. The method comprises: (a) forming the first layer on a substrate; (b) forming a solid phase of a configurable material on the first layer at least in areas where the second layer is to cross the first layer; (c) forming the second layer on the configurable material, over the first layer; and (d) changing a property of the configurable material to thereby configure the nanoscale devices.
摘要翻译：可配置电子电路包括由第二层金属/半导体纳米级线交叉的一层金属/半导体纳米级线的交叉点阵列，其中线之间具有可配置层。提供了通过使用固体材料作为可配置层的氧化或还原方法来改变可配置层的厚度和/或电阻的方法。具体地，提供一种用于在可配置设备的交叉开关阵列中配置纳米级器件的方法，其包括第一纳米级线层的交点的阵列，其包括第一金属或第一半导体材料，所述第一金属或第一半导体材料由第二纳米级线交叉，所述第二金属或第二半导体材料包括第二金属或第二半导体材料。该方法包括：（a）在衬底上形成第一层; （b）至少在所述第二层与所述第一层交叉的区域中，在所述第一层上形成可配置材料的固相; （c）在所述可配置材料上形成在所述第一层上的所述第二层; 和（d）改变可配置材料的特性，从而配置纳米级器件。

62. 发明申请

US20050097257A1 Storage device 有权
标题翻译：储存设备
公开(公告)号：US20050097257A1
公开(公告)日：2005-05-05
申请号：US10851897
申请日：2004-05-21
申请人： Minoru Ishida , Katsuhisa Aratani , Akira Kouchiyama
发明人： Minoru Ishida , Katsuhisa Aratani , Akira Kouchiyama
IPC分类号： G11C13/00 , G11C7/00 , G11C11/409 , G11C13/02 , G11C16/02 , H01L27/10 , G06F12/00
CPC分类号： G11C13/0011 , G11C13/0064 , G11C13/0069 , G11C16/3459 , G11C2013/009
摘要： A storage device comprises a memory element and an applying means for applying a voltage to the memory element wherein the memory element changes its characteristic to record thereon information with application of a voltage to the memory element by the applying means, the memory element further changing its characteristic when the same information is recorded on the memory element continuously. The memory element has a recording method which comprises the steps of detecting content of information that has already been recorded on the memory element when the information is recorded, comparing the information that has already been recorded on the memory element with information to be recorded on the memory element, applying a voltage to the memory element to make an ordinary information recording process if the two information are different from each other and disabling the ordinary information recording process when the two information are identical to each other. Thus, the storage device according to the present invention can satisfactorily carry out recording operations even when information is recorded continuously.
摘要翻译：存储装置包括存储元件和用于向存储元件施加电压的施加装置，其中存储元件改变其特性以便通过施加装置向存储元件施加电压来记录信息，存储元件进一步改变其当相同的信息被连续记录在存储元件上时的特性。存储元件具有记录方法，其包括以下步骤：当记录信息时已经记录在存储元件上的信息的内容，将已经记录在存储元件上的信息与要记录在存储元件上的信息进行比较存储元件，如果两个信息彼此不同，则向存储元件施加电压以进行普通信息记录处理，并且当两个信息彼此相同时禁用普通信息记录处理。因此，即使当连续记录信息时，根据本发明的存储装置也能令人满意地执行记录操作。

63. 发明申请

US20050093045A1 NONVOLATILE MEMORY AND ERASING METHOD 失效
标题翻译：非易失性存储器和擦除方法
公开(公告)号：US20050093045A1
公开(公告)日：2005-05-05
申请号：US10782916
申请日：2004-02-23
申请人： Tsuyoshi Tsujioka
发明人： Tsuyoshi Tsujioka
IPC分类号： G11C16/02 , G11C13/02 , G11C13/04 , H01L27/105 , H01L27/115 , H01L27/28 , H01L51/05 , G11C11/24
CPC分类号： G11C13/041 , B82Y10/00 , G11C13/0014 , G11C13/02 , G11C13/04
摘要： There is provided a nonvolatile memory including memory cells each of which includes a storage element including a bistable molecular layer, wherein the bistable molecular layer contains a bistable molecule which brings about isomerization from a first isomer into a second isomer by injecting a hole and an electron into the bistable molecular layer, and brings about isomerization from the second isomer into the first isomer by irradiating the bistable molecular layer with erase light, and the memory is configured to irradiate the bistable molecular layers of all the memory cells with the erase light while applying an electric field to the bistable molecular layer of only a part of the memory cells that stores information to be held when erasing information stored in the rest of the memory cells.
摘要翻译：提供了包括存储单元的非易失性存储器，每个存储单元包括包含双稳态分子层的存储元件，其中双稳态分子层含有双稳态分子，其通过注入空穴和电子使第一异构体进一步异构化成第二异构体进入双稳态分子层，通过用擦除光照射双稳态分子层，将异构化从第二异构体引入第一异构体，并且存储器被配置为在施加时用擦除光照射所有存储单元的双稳态分子层仅存储单元的一部分的双稳态分子层的电场，其存储当擦除存储在其余存储单元中的信息时要保持的信息。

64. 发明授权

US06888978B2 Electric-field actuated chromogenic materials based on molecules with a rotating middle segment for applications in photonic switching 有权
标题翻译：基于具有旋转中间段的分子的电场致动显色材料用于光子切换
公开(公告)号：US06888978B2
公开(公告)日：2005-05-03
申请号：US10618172
申请日：2003-07-10
申请人： Xiao-An Zhang , R. Stanley Williams , Kent D. Vincent
发明人： Xiao-An Zhang , R. Stanley Williams , Kent D. Vincent
IPC分类号： G02F1/15 , G02F1/17 , G02F1/19 , G02F3/00 , G11C13/02 , G11C23/00 , H01L51/30 , G02B26/08 , G11C13/00 , H01H1/02
CPC分类号： G11C13/0014 , B82Y10/00 , G02F1/15 , G02F1/17 , G02F1/174 , G11C13/02 , G11C13/04 , G11C23/00 , G11C2213/14 , G11C2213/71 , G11C2213/77 , G11C2213/81 , H01L51/0051 , H01L51/0058 , H01L51/0595
摘要： A molecular system is provided for electric field activated switches, such as optical switches. The molecular system has an electric field induced band gap change that occurs via a molecular conformation change, based on a rotor/stator construction of the molecular system, involving a rotating portion (rotor) connected between two stationary portions (stators). Nanometer-scale reversible optical switches are thus provided that can be assembled easily to make a variety of optical devices, including optical displays.
摘要翻译：为诸如光开关的电场激活开关提供分子系统。基于分子系统的转子/定子结构，分子系统具有通过分子构象变化发生的电场诱导的带隙变化，涉及连接在两个固定部分（定子）之间的旋转部分（转子）。因此，提供了能够容易地组装以制造包括光学显示器在内的各种光学装置的纳米级的可逆光学开关。

65. 发明申请

US20050078505A1 AC sensing for a resistive memory 有权
标题翻译：用于电阻式存储器的交流感测
公开(公告)号：US20050078505A1
公开(公告)日：2005-04-14
申请号：US10681161
申请日：2003-10-09
申请人： Thomas Voshell
发明人： Thomas Voshell
IPC分类号： G11C7/06 , G11C11/16 , G11C13/00 , G11C13/02 , G11C16/26 , G11C11/00
CPC分类号： G11C13/0061 , G11C7/06 , G11C11/1673 , G11C13/0004 , G11C13/0011 , G11C13/004 , G11C2013/0054 , G11C2013/0057 , G11C2213/79
摘要： Alternating current is used to sense a logic state of a memory cell that has a resistive memory element. The memory element can be in an array and a memory device can include the array and peripheral circuitry for reading or sensing each memory cell in the array. The peripheral circuitry can include a clock/control circuit providing a control signal, which controls when a row of memory cells are sensed, a switching circuit for receiving a cellplate count signal and a bit count signal provided by the clock/control circuit, a cellplate line signal and a bit line signal from the memory cell, the switching circuit producing a first output signal and a second output signal, wherein one of the first output signal and the second output signal is at a supply voltage and the other of the first output signal and the second output signal alternates polarity with each sensing operation and a comparison circuit receiving the first output signal and the second output signal and outputting a signal corresponding to the logic sate of the memory cell.
摘要翻译：交流电用于检测具有电阻性存储元件的存储单元的逻辑状态。存储器元件可以是阵列，并且存储器件可以包括用于读取或感测阵列中的每个存储器单元的阵列和外围电路。外围电路可以包括提供控制信号的时钟/控制电路，该控制信号控制何时检测一行存储器单元，用于接收单元板计数信号的开关电路和由时钟/控制电路提供的位计数信号，单元板所述开关电路产生第一输出信号和第二输出信号，其中所述第一输出信号和所述第二输出信号中的一个处于电源电压，并且所述第一输出中的另一个输出信号信号和第二输出信号与每个感测操作交替极性，并且比较电路接收第一输出信号和第二输出信号，并输出与存储器单元的逻辑状态对应的信号。

66. 发明授权

US06880146B2 Molecular-wire-based restorative multiplexer, and method for constructing a multiplexer based on a configurable, molecular-junction-nanowire crossbar 有权
标题翻译：基于分子线的修复多路复用器，以及用于构建基于可配置的分子结纳米线交叉开关的多路复用器的方法
公开(公告)号：US06880146B2
公开(公告)日：2005-04-12
申请号：US10355465
申请日：2003-01-31
申请人： Greg Snider
发明人： Greg Snider
IPC分类号： G06F17/50 , G11C13/02 , H04J3/04
CPC分类号： G11C13/0023 , B82Y10/00 , G11C13/02 , G11C2213/77 , G11C2213/81 , Y10S977/936 , Y10S977/94
摘要： A method for configuring any m-to-n multiplexer from a molecular-junction-nanowire crossbar, and m-to-n multiplexers configured according to the disclosed method. In the described embodiments, a complementary/symmetry molecular-junction-nanowire crossbar is employed, with input nanowire signal lines intersecting certain relatively high-voltage narrow nanowires via nFET devices and intersecting grounded nanowires via pFET devices. The relatively high-voltage and grounded nanowires are, in turn, selectively coupled to one or more output nanowire signal lines.
摘要翻译：一种用于根据所公开的方法配置从分子结纳米线交叉开关的任何m到n多路复用器和m到n多路复用器的方法。在所描述的实施例中，使用互补/对称分子结 - 纳米线交叉，其中输入纳米线信号线经由nFET器件与某些相对高电压的窄纳米线相交，并且经由pFET器件相交接地的纳米线。相对高电压和接地的纳米线又选择性地耦合到一个或多个输出纳米线信号线。

67. 发明授权

US06873540B2 Molecular memory cell 有权
标题翻译：分子记忆细胞
公开(公告)号：US06873540B2
公开(公告)日：2005-03-29
申请号：US10139748
申请日：2002-05-07
申请人： Juri H. Krieger , Nikolay F. Yudanov
发明人： Juri H. Krieger , Nikolay F. Yudanov
IPC分类号： A01H5/10 , A23D9/00 , C11B1/00 , G11C11/56 , G11C13/00 , G11C13/02 , H01L51/00 , H01L51/20
CPC分类号： G11C13/0009 , A01H5/10 , A23D9/00 , B82Y10/00 , C11B1/00 , G11C11/5664 , G11C13/0014 , G11C13/0069 , G11C2013/0073 , G11C2013/009 , G11C2213/13 , G11C2213/15 , G11C2213/51 , G11C2213/77 , H01L51/0595
摘要： A memory cell is provided with a pair of electrodes, and an active layer sandwiched between the electrodes and including a molecular system and ionic complexes distributed in the molecular system. The active layer having a high-impedance state and a low-impedance state switches from the high-impedance state to the low-impedance state when an amplitude of a writing signal exceeds a writing threshold level, to enable writing information into the memory cell. The active layer switches from the low-impedance state to the high-impedance state when an amplitude of an erasing signal having opposite polarity with respect to the writing signal exceeds an erasing threshold level, to enable erasing information from the memory cell.
摘要翻译：记忆单元设置有一对电极和夹在电极之间的活性层，并且包括分子系统中分子系统和离子络合物。当写入信号的幅度超过写入阈值电平时，具有高阻抗状态和低阻抗状态的有源层从高阻抗状态切换到低阻抗状态，以使得能够将信息写入存储单元。当相对于写入信号具有相反极性的擦除信号的幅度超过擦除阈值电平时，有源层从低阻抗状态切换到高阻抗状态，以便能够从存储器单元擦除信息。

68. 发明申请

US20050062097A1 Method and system for molecular charge storage field effect transistor 审中-公开
标题翻译：分子电荷存储场效应晶体管的方法和系统
公开(公告)号：US20050062097A1
公开(公告)日：2005-03-24
申请号：US10498743
申请日：2002-12-12
申请人： Veena Misra , David Bocian , Werner Kuhr , Jonathan Lindsey
发明人： Veena Misra , David Bocian , Werner Kuhr , Jonathan Lindsey
IPC分类号： H01L21/8247 , G11C11/56 , G11C13/02 , H01L27/115 , H01L27/28 , H01L29/788 , H01L29/792 , H01L51/05
CPC分类号： H01L27/283 , B82Y10/00 , G11C11/5664 , G11C13/0009 , G11C13/0014 , G11C13/0016 , G11C2213/53 , H01L51/052 , H01L51/0529 , Y10S977/721 , Y10S977/887 , Y10S977/937
摘要： A method and/or system and/or apparatus for a molecular-based FET device (an m-FET) uses charge storing molecules (120) between a gate (110) and channel (105) of an FET-type transistor. Further embodiments describe fabrication methods for using combinations of standard practices in lithography and synthetic chemistry and novel elements.
摘要翻译：用于分子型FET器件（m-FET）的方法和/或系统和/或设备在FET型晶体管的栅极（110）和沟道（105）之间使用电荷存储分子（120）。另外的实施例描述了使用光刻和合成化学中的标准实践的组合以及新颖元件的制造方法。

69. 发明申请

US20050059187A1 Non-volatile memory structure 失效
公开(公告)号：US20050059187A1
公开(公告)日：2005-03-17
申请号：US10881527
申请日：2004-07-01
申请人： Terry Gilton
发明人： Terry Gilton
IPC分类号： G11C13/02 , G11C16/02 , H01L29/68 , H01L45/00 , H01L21/06
CPC分类号： G11C13/0011 , G11C13/0004 , G11C2213/53 , H01L29/685
摘要： A non-volatile memory cell utilizes a programmable conductor random access memory (PCRAM) structure instead of a polysilicon layer for a floating gate. Instead of storing or removing electrons from a floating gate, the programmable conductor is switched between its low and high resistive states to operate the flash memory cell. The resulting cell can be erased faster and has better endurance than a conventional flash memory cell.

70. 发明申请

US20050056910A1 NON-VOLATILE MEMORY STRUCTURE 失效
标题翻译：非易失性存储器结构
公开(公告)号：US20050056910A1
公开(公告)日：2005-03-17
申请号：US10663741
申请日：2003-09-17
申请人： Terry Gilton
发明人： Terry Gilton
IPC分类号： G11C13/02 , G11C16/02 , H01L29/68 , H01L45/00 , H01L29/24
CPC分类号： G11C13/0011 , G11C13/0004 , G11C2213/53 , H01L29/685
摘要： A non-volatile memory cell utilizes a programmable conductor random access memory (PCRAM) structure instead of a polysilicon layer for a floating gate. Instead of storing or removing electrons from a floating gate, the programmable conductor is switched between its low and high resistive states to operate the flash memory cell. The resulting cell can be erased faster and has better endurance than a conventional flash memory cell.
摘要翻译：非易失性存储单元利用可编程导体随机存取存储器（PCRAM）结构代替用于浮置栅极的多晶硅层。代替从浮动栅极存储或去除电子，可编程导体在其低和高电阻状态之间切换以操作闪存单元。所得到的单元可以比传统的闪存单元更快地被擦除并具有更好的耐久性。

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