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61. 发明申请

US20110199167A1 MEMS RESONATOR ARRAY STRUCTURE AND METHOD OF OPERATING AND USING SAME 有权
标题翻译： MEMS谐振器阵列结构及其操作和使用方法
公开(公告)号：US20110199167A1
公开(公告)日：2011-08-18
申请号：US13040757
申请日：2011-03-04
申请人： Markus LUTZ , Zhiyu PAN , Aaron PARTRIDGE
发明人： Markus LUTZ , Zhiyu PAN , Aaron PARTRIDGE
IPC分类号： H03H9/15
CPC分类号： H03B5/30 , H03H9/02259 , H03H9/02338 , H03H9/2405 , H03H9/2447 , H03H9/505 , H03H2009/0233 , H03H2009/02385 , H03H2009/0244 , H03H2009/02503
摘要： Each one of resonators arranged in an N×M MEMS array structure includes substantially straight elongated beam sections connected by curved/rounded sections and is mechanically coupled to at least one adjacent resonator of the array via a coupling section, each elongated beam section connected to another elongated beam section at a distal end via the curved/rounded sections forming a geometric shape (e.g., a rounded square), and the coupling sections disposed between elongated beam sections of adjacent resonators. The resonators, when induced, oscillate at substantially the same frequency, in combined elongating/breathing and bending modes, i.e., beam sections exhibiting elongating/breathing-like and bending-like motions. One or more of the array structure's resonators may include one or more nodal points (i.e., that are substantially stationary and/or experience little movement), which are suitable and/or preferable locations to anchor the resonator/array to the substrate, in one or more areas of the structure's curved sections.
摘要翻译：布置在N×M MEMS阵列结构中的每个谐振器包括通过弯曲/圆形部分连接的基本上直的细长梁段，并且经由耦合部分机械耦合到阵列的至少一个相邻谐振器，每个细长梁部分连接到另一个通过形成几何形状（例如，圆形方形）的弯曲/圆形部分的远端处的细长梁部分，以及设置在相邻谐振器的细长梁部分之间的耦合部分。谐振器在被诱导时以组合的延长/呼吸和弯曲模式即基本上相同的频率振荡，即表现出延长/呼吸状和弯曲状运动的梁部分。一个或多个阵列结构的谐振器可以包括一个或多个节点（即基本上静止的和/或经历少量运动），这些点是合适的和/或优选的将谐振器/阵列锚定到衬底的位置，一个或更多的结构的弯曲部分的区域。

62. 发明授权

US07994877B1 MEMS-based quartz hybrid filters and a method of making the same 有权
标题翻译：基于MEMS的石英混合滤波器及其制造方法
公开(公告)号：US07994877B1
公开(公告)日：2011-08-09
申请号：US12268309
申请日：2008-11-10
申请人： Randall L. Kubena , David T. Chang
发明人： Randall L. Kubena , David T. Chang
IPC分类号： H03H9/02 , H03H9/05 , H03H9/15 , H03H9/54 , H03H7/00
CPC分类号： H03H9/542 , H03H9/0542
摘要： An integrated Micro-Electro-Mechanical Systems (MEMS) filter includes an insulating substrate bonded to a base substrate such that at least a portion of the insulating substrate is separated from the base substrate by a gap, the insulating substrate having a first side and a second side, an inductive element having a coil, wherein the coil of the inductive element is on the insulating substrate, and a capacitive element having two conductive plates, wherein one of the two conductive plates is on the insulating substrate.
摘要翻译：集成的微电子机械系统（MEMS）滤波器包括与基底基板接合的绝缘基板，使得绝缘基板的至少一部分通过间隙与基底基板分离，绝缘基板具有第一面和第二侧，具有线圈的电感元件，其中电感元件的线圈在绝缘基板上，以及具有两个导电板的电容元件，其中两个导电板中的一个位于绝缘基板上。

63. 发明授权

US07889024B2 Single cavity acoustic resonators and electrical filters comprising single cavity acoustic resonators 有权
标题翻译：单腔声谐振器和包括单腔声谐振器的电过滤器
公开(公告)号：US07889024B2
公开(公告)日：2011-02-15
申请号：US12201641
申请日：2008-08-29
申请人： Paul Bradley , David A. Feld
发明人： Paul Bradley , David A. Feld
IPC分类号： H03H9/15 , H03H9/54 , H03H9/70
CPC分类号： H03H9/583 , H03H9/585 , H03H9/605
摘要： A single cavity acoustic resonator comprises: a first electrode; a second electrode; a third electrode disposed between the first electrode and the second electrode. The single cavity acoustic resonator also comprises: a first piezoelectric layer disposed between the third electrode and the first electrode, and comprising a first C-axis having an orientation; and a second piezoelectric layer disposed between the third electrode and the second electrode, and comprising a second C-axis having an orientation parallel to the first C-axis. Application of a time varying electrical signal at a drive frequency to either the third electrode or to the first and second electrodes results in a resonance of the single cavity acoustic resonator at twice a fundamental resonant frequency and a cancellation of substantially all even-order mixing products in the single cavity resonator. An electrical filter and a duplexer are also described.
摘要翻译：单腔声谐振器包括：第一电极; 第二电极; 设置在第一电极和第二电极之间的第三电极。单腔声谐振器还包括：设置在第三电极和第一电极之间的第一压电层，并且包括具有取向的第一C轴; 以及设置在所述第三电极和所述第二电极之间的第二压电层，并且包括具有平行于所述第一C轴的取向的第二C轴。以驱动频率将时变电信号施加到第三电极或第一和第二电极，导致单谐振腔谐振器在基本共振频率的两倍和基本上所有偶数阶混合产物的消除在单腔谐振器中。还描述了一种电动过滤器和双工器。

64. 发明申请

US20100219911A1 ACOUSTIC WAVE DEVICE AND METHOD FOR FABRICATING THE SAME 有权
公开(公告)号：US20100219911A1
公开(公告)日：2010-09-02
申请号：US12781050
申请日：2010-05-17
申请人： Shunsuke KIDO , Takeshi NAKAO , Yasuharu NAKAI , Kenji NISHIYAMA , Michio KADOTA
发明人： Shunsuke KIDO , Takeshi NAKAO , Yasuharu NAKAI , Kenji NISHIYAMA , Michio KADOTA
IPC分类号： H03H9/15
CPC分类号： H03H9/02834 , H03H3/10 , Y10T29/42 , Y10T29/49005 , Y10T29/49155 , Y10T29/49165
摘要： A surface acoustic wave device includes a piezoelectric substrate, at least one interdigital transducer (IDT) electrode provided on the piezoelectric substrate, and an insulator layer to improve a temperature characteristic arranged so as to cover the IDT electrode. When a surface of the insulator layer is classified into a first surface region under which the IDT electrode is positioned and a second surface region under which no IDT electrode is positioned, the surface of the insulator layer in at least one portion of the second surface region is higher than the surface of the insulator layer from the piezoelectric substrate in at least one portion of the first surface region by at least about 0.001λ, where the wavelength of an acoustic wave is λ.

65. 发明申请

US20100117762A1 RESONATOR, FILTER AND ELECTRONIC DEVICE 有权
标题翻译：谐振器，滤波器和电子设备
公开(公告)号：US20100117762A1
公开(公告)日：2010-05-13
申请号：US12547235
申请日：2009-08-25
申请人： Shinji Taniguchi , Tokihiro Nishihara , Masafumi Iwaki , Masanori Ueda , Go Endo , Tsuyoshi Yokoyama , Takeshi Sakashita , Motoaki Hara
发明人： Shinji Taniguchi , Tokihiro Nishihara , Masafumi Iwaki , Masanori Ueda , Go Endo , Tsuyoshi Yokoyama , Takeshi Sakashita , Motoaki Hara
IPC分类号： H03H9/15
CPC分类号： H03H9/605 , H03H3/02 , H03H9/131 , H03H9/173 , H03H9/587 , H03H2003/021
摘要： A resonator includes a substrate, a lower electrode, a piezoelectric film provided on the lower electrode, and an upper electrode provided on the piezoelectric film. The lower electrode includes a first film provided on the substrate, and a second film that is provided on the first film and has a specific gravity greater than that of the first film. The piezoelectric film is provided on the second film. The upper electrode includes a third film provided on the piezoelectric film, and a fourth film provided on the third film, the third film having a specific gravity greater than that of the fourth film. The third film is thicker than the second film.
摘要翻译：谐振器包括基板，下电极，设置在下电极上的压电膜和设置在压电膜上的上电极。下电极包括设置在基板上的第一膜和设置在第一膜上并具有比第一膜大的比重的第二膜。压电薄膜设置在第二薄膜上。上电极包括设置在压电膜上的第三膜和设置在第三膜上的第四膜，第三膜的比重大于第四膜的比重。第三个薄膜比第二个薄膜厚。

66. 发明授权

US07619493B2 Bulk acoustic resonator and filter element 失效
标题翻译：体积声共振器和滤芯
公开(公告)号：US07619493B2
公开(公告)日：2009-11-17
申请号：US11590804
申请日：2006-11-01
申请人： Takashi Uno , Naohiro Tsurumi , Kazuhiro Yahata , Hiroyuki Sakai
发明人： Takashi Uno , Naohiro Tsurumi , Kazuhiro Yahata , Hiroyuki Sakai
IPC分类号： H03H9/15 , H03H9/54
CPC分类号： H03H9/175 , H03H9/02125 , H03H9/589 , H03H9/605
摘要： A bulk acoustic resonator has an acoustic reflector portion formed on a substrate and including one or more low acoustic impedance layers and one or more high acoustic impedance layers having a higher acoustic impedance than the low acoustic impedance layer which are disposed in stacked relation and an acoustic resonator portion formed on the acoustic reflector portion and having a piezoelectric film. At least one of the low acoustic impedance layers is made of silicon.
摘要翻译：体声波谐振器具有形成在基板上的声反射器部分，并且包括一个或多个低声阻抗层和一个或多个具有比低声阻抗层更高的声阻抗层的高声阻抗层，它们以堆叠关系设置，谐振器部分形成在声反射器部分上并具有压电膜。低声阻抗层中的至少一个由硅制成。

67. 发明授权

US07554426B2 Resonator, apparatus having the same and fabrication method of resonator 有权
标题翻译：谐振器，具有相同的装置和谐振器的制造方法
公开(公告)号：US07554426B2
公开(公告)日：2009-06-30
申请号：US11701456
申请日：2007-02-02
申请人： Joo-ho Lee , Hae-seok Park , Myeong-kwon Gu , Jae-shik Shin , In-sang Song , Kwang-jae Shin
发明人： Joo-ho Lee , Hae-seok Park , Myeong-kwon Gu , Jae-shik Shin , In-sang Song , Kwang-jae Shin
IPC分类号： H03H9/13 , H03H9/15 , H03H3/02 , H03H9/54
CPC分类号： H03H9/173 , H03H3/02 , H03H9/131 , H03H9/564 , H03H2003/021 , H03H2003/0471
摘要： A resonator includes a substrate, and a resonating unit formed on the substrate, and having a lower electrode, a piezoelectric film, and an upper electrode. The lower electrode is formed of at least two layers to adjust a piezoelectric coupling coefficient. The lower electrode includes a first electrode layer and a second electrode layer, which have crystallographic characteristics, particularly, grain sizes or surface roughnesses Ra, different from each other, respectively. The first and the second electrode layers are formed to have a predetermined thickness ratio to each other.
摘要翻译：谐振器包括基板和形成在基板上的谐振单元，并且具有下电极，压电膜和上电极。下电极由至少两层形成以调节压电耦合系数。下电极包括分别具有彼此不同的晶体学特性，特别是晶粒尺寸或表面粗糙度Ra的第一电极层和第二电极层。第一电极层和第二电极层形成为具有彼此预定的厚度比。

68. 发明申请

US20080309192A1 ACOUSTIC WAVE RESONATOR 有权
标题翻译：声音波共振器
公开(公告)号：US20080309192A1
公开(公告)日：2008-12-18
申请号：US12203393
申请日：2008-09-03
申请人： Takeshi Nakao , Yasuharu Nakai , Michio Kadota
发明人： Takeshi Nakao , Yasuharu Nakai , Michio Kadota
IPC分类号： H03H9/25 , H03H9/15
CPC分类号： H03H9/02818 , H03H9/02992 , H03H9/1452
摘要： In an acoustic wave resonator, an IDT electrode is provided on a piezoelectric substrate. The IDT electrode is apodization-weighted such that a plurality of maximum values of cross widths are provided in acoustic wave propagation directions. Alternatively, in apodization weighting, weighting is applied such that at least one of a pair of envelopes located at outer side portions of the IDT electrode in directions substantially perpendicular to acoustic wave propagation directions includes a plurality of angled envelope portions angled from a central portion of the IDT electrode toward an outer side portion of the IDT electrode in a direction substantially perpendicular to the acoustic wave propagation directions.
摘要翻译：在声波谐振器中，在压电基板上设置有IDT电极。 IDT电极被变迹加权，使得在声波传播方向上提供多个最大交叉宽度值。或者，在变迹加权中，施加加权，使得位于IDT电极的外侧部分的大致垂直于声波传播方向的方向上的一对包络中的至少一个包括多个成角度的包络部分，该包络部分从 IDT电极朝向与声波传播方向大致正交的方向朝向IDT电极的外侧部分。

69. 发明授权

US07463117B2 Film bulk acoustic-wave resonator (FBAR), filter implemented by FBARs and method for manufacturing FBAR 失效
标题翻译：薄膜体声波谐振器（FBAR），FBAR实现的滤波器和FBAR制造方法
公开(公告)号：US07463117B2
公开(公告)日：2008-12-09
申请号：US11169645
申请日：2005-06-30
申请人： Ryoichi Ohara , Naoko Yanase , Kazuhiko Itaya , Kenya Sano , Takaaki Yasumoto , Kazuhide Abe , Toshihiko Nagano , Michihiko Nishigaki , Takashi Kawakubo
发明人： Ryoichi Ohara , Naoko Yanase , Kazuhiko Itaya , Kenya Sano , Takaaki Yasumoto , Kazuhide Abe , Toshihiko Nagano , Michihiko Nishigaki , Takashi Kawakubo
IPC分类号： H03H9/13 , H03H9/15 , H03H9/54
CPC分类号： H03H9/02094 , H03H3/04 , H03H9/02133 , H03H9/173 , H03H9/174 , H03H9/703 , H03H2003/021 , H03H2003/023
摘要： A film bulk acoustic-wave resonator encompasses a substrate having a cavity; a bottom electrode partially fixed to the substrate, part of the bottom electrode is mechanically suspended above the cavity; a piezoelectric layer provided on the bottom electrode; and a top electrode provided on the piezoelectric layer having crystal axes oriented along a thickness direction of the piezoelectric layer, a full width at half maximum of the distribution of the orientations of the crystal axes is smaller than or equal to about six degrees.
摘要翻译：薄膜体声波谐振器包括具有空腔的基板; 部分地固定在基板上的底部电极，底部电极的一部分机械地悬挂在空腔上方; 设置在底部电极上的压电层; 以及设置在压电体层上的顶电极，其具有沿着压电体层的厚度方向取向的晶轴，所述晶轴的取向分布的半峰全宽小于或等于约6度。

70. 发明申请

US20080284542A1 FILM BULK ACOUSTIC RESONATOR 审中-公开
标题翻译：电影大音量谐振器
公开(公告)号：US20080284542A1
公开(公告)日：2008-11-20
申请号：US11923117
申请日：2007-10-24
申请人： Kenya Sano , Masahiko Hasunuma , Hiroshi Toyoda
发明人： Kenya Sano , Masahiko Hasunuma , Hiroshi Toyoda
IPC分类号： H03H9/15
CPC分类号： H03H9/174 , H03H3/04 , H03H9/02149 , H03H9/13 , H03H9/173 , H03H2003/023
摘要： A film bulk acoustic resonator includes: a substrate; a lower electrode held on the substrate with at least a portion thereof being in a hollow state; a piezoelectric film provided on the lower electrode; and an upper electrode provided on the piezoelectric film. At least one of the lower electrode and the upper electrode is primarily composed of copper (Cu) and further contains a first element having a negatively larger free energy of oxide formation (ΔG) than copper. At least one of the lower electrode and the upper electrode is primarily composed of copper (Cu) and further contains a second element having smaller surface energy than copper.
摘要翻译：膜体声波谐振器包括：基板; 保持在所述基板上的下电极，其至少一部分处于中空状态; 设置在下电极上的压电膜; 以及设置在压电膜上的上电极。下电极和上电极中的至少一个主要由铜（Cu）组成，并且还包含具有比铜更大的氧化物形成自由能（ΔG）的较大的第一元素。下电极和上电极中的至少一个主要由铜（Cu）组成，并且还包含比铜更小的表面能的第二元件。

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