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71. 发明授权

US09431038B1 Method for fabricating a magnetic write pole having an improved sidewall angle profile 有权
标题翻译：具有改进的侧壁角轮廓的磁性写入极的制造方法
公开(公告)号：US09431038B1
公开(公告)日：2016-08-30
申请号：US14753630
申请日：2015-06-29
申请人： Western Digital (Fremont), LLC
发明人： Jinqiu Zhang , Xiaoyu Yang , Feng Liu , Xiaojun Zhang , Krishna Chetry , Masahiro Osugi , Ning Wu
IPC分类号： G11B5/11 , B44C1/22 , G11B5/31 , G11B5/60
CPC分类号： G11B5/3163 , G11B5/1278 , G11B5/3116
摘要： A method provides a magnetic device having an air-bearing surface (ABS) location. A layer including first and second sublayers is provided. The first sublayer includes the ABS location. The second sublayer recessed from the ABS location such that part of the first sublayer is between the second sublayer and the ABS location. The first sublayer has a rear surface oriented at a nonzero, acute angle from a surface perpendicular to the ABS location. A trench is formed in the layer. The trench has a bottom, a top and sidewalls. The sidewalls form a first angle with a direction perpendicular to the bottom at the ABS location. The sidewalls form a second angle with the direction in part of the second sublayer. The second angle is smaller than the first angle. The sidewall angle varies along the rear surface of the first sublayer. A main pole is provided in the trench.
摘要翻译：一种方法提供具有空气轴承表面（ABS）位置的磁性装置。提供包括第一和第二子层的层。第一子层包括ABS位置。第二子层从ABS位置凹陷，使得第一子层的一部分位于第二子层和ABS位置之间。第一子层具有从垂直于ABS位置的表面定向成非零锐角的后表面。在该层中形成沟槽。沟槽具有底部，顶部和侧壁。在ABS位置处，侧壁与垂直于底部的方向形成第一角度。侧壁与第二子层的一部分中的方向形成第二角度。第二角度小于第一角度。侧壁角沿第一子层的后表面变化。沟槽中设有主极。

72. 发明授权

US09396742B1 Magnetoresistive sensor for a magnetic storage system read head, and fabrication method thereof 有权
公开(公告)号：US09396742B1
公开(公告)日：2016-07-19
申请号：US14657420
申请日：2015-03-13
申请人： Western Digital (Fremont), LLC
发明人： Cheng-Han Yang , Chen-Jung Chen , Christian Kaiser , Yuankai Zheng , Qunwen Leng , Mahendra Pakala
IPC分类号： G11B5/00 , G11B5/39
CPC分类号： G11B5/3906 , B82Y10/00 , G11B5/3909 , G11B2005/3996 , Y10T29/49032 , Y10T29/49034 , Y10T428/1114 , Y10T428/1121
摘要： A magnetic read transducer including a magnetoresistive sensor is described, as well as a fabrication method thereof. The magnetoresistive sensor includes a cap layer overlaying a free layer. The cap layer is situated with a first thickness to absorb boron from the free layer. The magnetoresistive sensor is annealed, and boron is diffused from the free layer and absorbed by the cap layer, improving the magnetic performance of the free layer. The cap layer thickness is then reduced to a second thickness, thereby reducing the shield-to-shield (SS) stack spacing of the magnetoresistive sensor and allowing for increased areal recording density.

73. 发明授权

US09368131B1 Data storage device employing mirrored cross-track profiles for top and bottom disk surfaces 有权
标题翻译：数据存储设备采用顶部和底部磁盘表面的镜像交叉轨道轮廓
公开(公告)号：US09368131B1
公开(公告)日：2016-06-14
申请号：US14678816
申请日：2015-04-03
申请人： Western Digital (Fremont), LLC
发明人： Kathy X. Tang , Xiao Z. Wu , Hong Pan
IPC分类号： G11B21/02 , G11B5/027 , G11B5/012 , G11B5/596
CPC分类号： G11B5/012
摘要： A data storage device is disclosed wherein when a first head is over a top disk surface, a first undershoot of a first cross-track profile is closer to an inner diameter of a disk and a second undershoot of the first cross-track profile is closer to an outer diameter of the disk. When a second head is over a bottom disk surface, a second undershoot of a second cross-track profile is closer to the inner diameter of the disk and a first undershoot of the second cross-track profile is closer to the outer diameter of the disk.
摘要翻译：公开了一种数据存储装置，其中当第一头部在顶部盘表面上方时，第一交叉轨道轮廓的第一下冲更靠近盘的内径，并且第一交叉轨道轮廓的第二下冲更接近到盘的外径。当第二头部在底盘表面上方时，第二交叉轨道轮廓的第二下冲更靠近盘的内径，并且第二横向轨道轮廓的第一下冲更靠近盘的外径。

74. 发明授权

US09361914B1 Magnetic sensor with thin capping layer 有权
标题翻译：磁性传感器，薄盖层
公开(公告)号：US09361914B1
公开(公告)日：2016-06-07
申请号：US14308421
申请日：2014-06-18
申请人： Western Digital (Fremont), LLC
发明人： Christian Kaiser , Qunwen Leng
IPC分类号： G11B5/39 , G11B5/31
CPC分类号： G11B5/39 , G11B5/3116 , G11B5/3903 , G11B5/3909 , G11B5/3912 , G11B5/3929 , G11B5/3932 , G11B2005/3996
摘要： A magnetic sensor for use in a data storage device is described. The magnetic sensor includes a composite layer comprising a free layer portion and a bias layer portion each comprising a magnetic material, a shield layer comprising a magnetic material, and a continuous spacer layer comprising a non-magnetic material, the spacer layer separating the shield layer from the composite layer such that the magnetic coupling between the shield layer and the bias layer portion is stronger than the magnetic coupling between the shield layer and the free layer portion. A disk drive comprising a rotatable magnetic recording disk and the slider including the magnetic sensor arranged with the magnetic recording disk is also described.
摘要翻译：描述了一种用于数据存储装置的磁传感器。磁传感器包括复合层，该复合层包括自由层部分和偏置层部分，每个偏置层部分包括磁性材料，包含磁性材料的屏蔽层和包含非磁性材料的连续间隔层，所述间隔层将屏蔽层从复合层使得屏蔽层和偏置层部分之间的磁耦合比屏蔽层和自由层部分之间的磁耦合更强。还描述了包括可旋转磁记录盘的磁盘驱动器和包括与磁记录盘配置的磁传感器的滑块。

75. 发明申请

US20160154310A1 METHOD FOR EXPOSING PHOTORESIST IN A MICROELECTRIC DEVICE 审中-公开
标题翻译：曝光微电极器件的方法
公开(公告)号：US20160154310A1
公开(公告)日：2016-06-02
申请号：US15017882
申请日：2016-02-08
申请人： Western Digital (Fremont), LLC
发明人： HONGPING YUAN , HAI SUN , XIANZHONG ZENG , WINNIE YU
IPC分类号： G03F7/20
CPC分类号： G03F7/2022 , G03F7/70466 , H01L21/0274
摘要： A method and system provide microelectric devices on fields on a substrate. Each field includes at least one microelectric device having a critical device feature and remaining device feature(s) distal from the critical device feature. The method and system include providing a photoresist layer for fabricating the microelectric devices and exposing the photoresist layer using a dark field mask. The dark field mask is for defining a critical mask feature corresponding to the critical device feature and exposing a first portion of the fields. The first portion includes not more than five percent of each field. The method and system further include exposing the photoresist layer using a clear field mask. The clear field mask is for defining remaining mask feature(s) corresponding to the remaining device feature(s). The clear field mask exposes a second portion of the fields that is different from the first portion.
摘要翻译：一种方法和系统在衬底上的场上提供微电子器件。每个场包括至少一个具有关键装置特征的微电子装置和远离关键装置特征的剩余装置特征。所述方法和系统包括提供用于制造微电子器件的光致抗蚀剂层并且使用暗场掩模曝光光致抗蚀剂层。暗场掩模用于定义与关键设备特征对应的关键掩模特征并暴露场的第一部分。第一部分不超过每个领域的百分之五。该方法和系统还包括使用清晰的场屏蔽来曝光光致抗蚀剂层。清除场掩模用于定义对应于剩余设备特征的剩余掩模特征。清除场掩模曝光与第一部分不同的场的第二部分。

76. 发明申请

US20160125899A1 PMR WRITER WITH CONSTANT SIDE WALL ANGLE 审中-公开
标题翻译： PMR WRITER与恒定的侧壁角度
公开(公告)号：US20160125899A1
公开(公告)日：2016-05-05
申请号：US14994361
申请日：2016-01-13
申请人： Western Digital (Fremont), LLC
发明人： Jinqiu ZHANG , Hongmei HAN , Feng LIU , Ming JIANG , Xiaotian ZHOU , Zeyu MA
IPC分类号： G11B5/31 , G11B5/60 , G11B5/127
CPC分类号： G11B5/3116 , G11B5/1278 , G11B5/1872 , G11B5/313 , G11B5/3163 , G11B5/6082
摘要： A writer main pole for a perpendicular magnetic recording system is provided. The writer pole may have a constant sidewall angle from the ABS to yoke and may be formed out of an insulating material and a magnetic material. The sidewall angle of the yoke region may be adjusted during manufacture. The ABS region may correspond to the magnetic material and the yoke region may correspond to the insulating material. The insulating material may comprise Alumina. The magnetic material may comprise a NiFe alloy.
摘要翻译：提供了一种用于垂直磁记录系统的写入器主极。写入极可以具有从ABS到轭的恒定侧壁角，并且可以由绝缘材料和磁性材料形成。可以在制造期间调整轭区域的侧壁角度。 ABS区域可以对应于磁性材料，并且轭区域可以对应于绝缘材料。绝缘材料可以包括氧化铝。磁性材料可以包括NiFe合金。

77. 发明授权

US09318130B1 Method to fabricate tunneling magnetic recording heads with extended pinned layer 有权
标题翻译：制造具有延长钉扎层的隧道磁记录头的方法
公开(公告)号：US09318130B1
公开(公告)日：2016-04-19
申请号：US13963328
申请日：2013-08-09
申请人： Western Digital (Fremont), LLC
发明人： Wei Gao , Guanghong Luo , Lily Yao , Ming Mao , Ming Jiang
IPC分类号： G11B5/127 , H04R31/00
CPC分类号： G11B5/3163 , G11B5/3909 , G11B5/398 , Y10T29/49032 , Y10T29/49046 , Y10T29/49052
摘要： A method of fabricating a magnetic device includes forming a sensor having a pinned layer and a free layer. A first reactive ion etch of a sensor stack patterns a hard mask layer with a photoresist image to form a first hard mask. Then a second reactive ion etch is performed to form an extended pinned layer. The method also includes depositing an insulating layer after the second reactive ion etch to protect exposed edges of the sensor stack, and then providing a chemical mechanical planarization (CMP) stop layer on the insulating layer. Subsequently, a CMP of the sensor stack is performed to remove a portion of the insulating layer. The resulting structure is substantially free of residue on the back edges of the sensor.
摘要翻译：制造磁性器件的方法包括形成具有钉扎层和自由层的传感器。传感器堆叠的第一反应离子蚀刻将具有光致抗蚀剂图像的硬掩模层图案化以形成第一硬掩模。然后执行第二反应离子蚀刻以形成延伸的钉扎层。该方法还包括在第二反应离子蚀刻之后沉积绝缘层以保护传感器堆叠的暴露边缘，然后在绝缘层上提供化学机械平坦化（CMP）停止层。随后，执行传感器堆叠的CMP以去除绝缘层的一部分。所得到的结构在传感器的后边缘上基本上没有残留物。

78. 发明申请

US20160099013A1 METHOD TO MAKE INTERFEROMETRIC TAPER WAVEGUIDE FOR HAMR LIGHT DELIVERY 审中-公开
公开(公告)号：US20160099013A1
公开(公告)日：2016-04-07
申请号：US14887035
申请日：2015-10-19
申请人： Western Digital (Fremont), LLC
发明人： DUJIANG WAN , GE YI , LIJIE ZHAO , HAI SUN , YUNFEI LI
IPC分类号： G11B5/31
CPC分类号： G11B5/314 , G02B6/00 , G02B6/10 , G02B6/122 , G02B6/136 , G11B2005/0021
摘要： A method for making an interferometric taper waveguide (I-TWG) with high critical dimension uniformity and small line edge roughness for a heat assisted magnetic recording (HAMR) head, wherein the method includes creating an I-TWG film stack with two hard mask layers on top of an I-TWG core layer sandwiched between two cladding layers, defining a photoresist pattern over the I-TWG film stack using deep ultraviolet lithography, transferring the pattern to the first hard mask layer using reactive ion etching (RIE), forming a temporary I-TWG pattern on the second hard mask layer using RIE, transferring the temporary pattern to the I-TWG core using RIE, refilling the cladding layer, and planarizing using chemical mechanical planarization (CMP).

79. 发明授权

US09286919B1 Magnetic writer having a dual side gap 有权
标题翻译：具有双面间隙的磁性笔迹
公开(公告)号：US09286919B1
公开(公告)日：2016-03-15
申请号：US14574250
申请日：2014-12-17
申请人： Western Digital (Fremont), LLC
发明人： Feng Liu , Zhanjie Li , Tao Pan , Zhigang Bai
IPC分类号： G11B5/127 , G11B5/265 , G11B5/60 , G11B5/31
CPC分类号： G11B5/3116 , G11B5/1278 , G11B5/23 , G11B5/315
摘要： A magnetic transducer has air-bearing surface (ABS) and includes a main pole, at least one coil, a side shield and a side gap. The coil(s) energize the main pole. A portion of the main pole resides at the ABS. The side gap is between the main pole and the side shield. The side gap is nonmagnetic and includes a first side gap and a second side gap. The first side gap is conformal with the main pole. The second side gap is conformal with the main pole. The first side gap is between the second side gap and the ABS. The second side gap is wider than the first side gap.
摘要翻译：磁换能器具有空气轴承表面（ABS），并且包括主极，至少一个线圈，侧护罩和侧间隙。线圈给主极通电。主杆的一部分位于ABS。侧面间隙位于主极和侧面屏蔽之间。侧面间隙是非磁性的，并且包括第一侧面间隙和第二侧面间隙。第一侧间隙与主极保持一致。第二侧间隙与主极保持一致。第一侧间隙在第二侧间隙和ABS之间。第二侧间隙比第一侧间隙宽。

80. 发明授权

US09245545B1 Short yoke length coils for magnetic heads in disk drives 有权
标题翻译：用于磁盘驱动器磁头的短磁轭长度线圈
公开(公告)号：US09245545B1
公开(公告)日：2016-01-26
申请号：US13899260
申请日：2013-05-21
申请人： Western Digital (Fremont), LLC
发明人： Ut Tran , Yunhe Huang , Keith Y. Sasaki , Curtis V. Macchioni , Zhigang Bai
IPC分类号： H01B13/00 , G11B5/33
CPC分类号： G11B5/332 , G11B5/3123
摘要： A method of forming a single layer inductive coil structure includes forming a first conductive coil on a substrate, forming an insulating layer by atomic layer deposition (ALD) over the first coil and the substrate, and forming one or more additional conductive coils on each of adjacent sides of the first coil insulated from the first coil and the substrate by the insulating layer. A method of forming a stacked layer inductive coil includes forming a cavity in a substrate, forming a first coil in the cavity wherein the cavity has an atomic layer deposition (ALD) layer, forming a second coil in the cavity adjacent to the first coil and separated by the ALD layer from the first coil, forming an insulating layer over the first and second coil, and forming a third coil on the insulating layer.
摘要翻译：形成单层感应线圈结构的方法包括在衬底上形成第一导电线圈，通过在第一线圈和衬底上的原子层沉积（ALD）形成绝缘层，并且在每一个上形成一个或多个附加的导电线圈通过绝缘层与第一线圈和衬底绝缘的第一线圈的相邻侧。形成叠层感应线圈的方法包括在衬底中形成空腔，在空腔中形成第一线圈，其中空腔具有原子层沉积（ALD）层，在邻近第一线圈的空腔中形成第二线圈，以及通过ALD层与第一线圈隔开，在第一和第二线圈上形成绝缘层，并在绝缘层上形成第三线圈。

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