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71. 发明授权

US08134402B1 Apparatus and method for powering up with hysteresis inactive 有权
标题翻译：用迟滞功能加载的装置和方法无效
公开(公告)号：US08134402B1
公开(公告)日：2012-03-13
申请号：US10774799
申请日：2004-02-09
申请人： Perry Scott Lorenz
发明人： Perry Scott Lorenz
IPC分类号： H01L35/00
CPC分类号： G01K3/005
摘要： A temperature-sensor circuit is provided. The temperature-sensor circuit may be configured such that an output of the temperature-sensor circuit trips when a specified temperature is reached. The temperature-sensor circuit may also be configured to trigger hysteresis if the specified temperature is reached. Additionally, the temperature-sensor circuit may be configured for powering up with hysteresis disabled. However, after the completion of a settling period, the hysteresis is enabled for triggering based on the temperature.
摘要翻译：提供温度传感器电路。温度传感器电路可以被配置为使得当达到指定温度时温度传感器电路的输出跳闸。温度传感器电路也可以被配置为在达到指定温度时触发迟滞。此外，温度传感器电路可以配置为禁用滞后电源。然而，在建立周期完成后，根据温度启用迟滞。

72. 发明授权

US08097802B2 Thermoelectric material including a multiple transition metal-doped type I clathrate crystal structure 有权
标题翻译：包括多过渡金属掺杂I型包合物晶体结构的热电材料
公开(公告)号：US08097802B2
公开(公告)日：2012-01-17
申请号：US12434333
申请日：2009-05-01
申请人： Jihui Yang , Xun Shi , Shengqiang Bai , Wenqing Zhang , Lidong Chen , Jiong Yang
发明人： Jihui Yang , Xun Shi , Shengqiang Bai , Wenqing Zhang , Lidong Chen , Jiong Yang
IPC分类号： H01L35/12 , H01L35/00 , H01B1/02 , H01L35/30
CPC分类号： H01L35/22
摘要： A thermoelectric material includes a multiple transition metal-doped type I clathrate crystal structure having the formula A8TMy11TMy22 . . . TMynnMzX46-y1-y2- . . . -yn-z. In the formula, A is selected from the group consisting of barium, strontium, and europium; X is selected from the group consisting of silicon, germanium, and tin; M is selected from the group consisting of aluminum, gallium, and indium; TM1, TM2, and TMn are independently selected from the group consisting of 3d, 4d, and 5d transition metals; and y1, y2, yn and Z are actual compositions of TM1, TM2, TMn, and M, respectively. The actual compositions are based upon nominal compositions derived from the following equation: z=8·qA−|Δq1|y1−|Δq2|y2− . . . −|Δqn|yn, wherein qA is a charge state of A, and wherein Δq1, Δq2, Δqn are, respectively, the nominal charge state of the first, second, and n-th TM.
摘要翻译：热电材料包括具有式A8TMy11TMy22的多过渡金属掺杂的I型包合物晶体结构。。。 TMynnMzX46-y1-y2-。。。 -yn-z。在该式中，A选自钡，锶和铕; X选自硅，锗和锡; M选自铝，镓和铟; TM1，TM2和TMn独立地选自3d，4d和5d过渡金属; y1，y2，yn和z分别为TM1，TM2，TMn和M的实际组成。实际组合物基于由以下等式导出的标称组成：z = 8·qA | | Dgr; q1 | y1- |＆Dgr; q2 | y2-。。。 - |＆Dgr; qn | yn，其中qA是A的电荷状态，其中＆Dgr; q1，＆Dgr; q2，＆Dgr; qn分别是第一，第二和第n TM的标称电荷状态。

73. 发明授权

US08092083B2 Temperature sensor with digital bandgap 有权
标题翻译：温度传感器带数字带隙
公开(公告)号：US08092083B2
公开(公告)日：2012-01-10
申请号：US11865672
申请日：2007-10-01
申请人： Garthik Venkataraman , Harold Kutz , Monte Mar
发明人： Garthik Venkataraman , Harold Kutz , Monte Mar
IPC分类号： G01K7/01 , H01L35/00
CPC分类号： G01K7/01 , H03K5/2481 , H03K5/249 , H03M3/43 , H03M3/456
摘要： A system comprises a temperature sensor generate multiple base-emitter voltage signals by sequentially providing various currents to a transistor, and a system controller to determine a differential voltage signal according to the multiple base-emitter voltage signals, the differential voltage signal proportional to an environmental temperature associated with the transistor.
摘要翻译：系统包括温度传感器，通过向晶体管顺序地提供各种电流而产生多个基极 - 发射极电压信号，以及系统控制器，用于根据多个基极 - 发射极电压信号确定差分电压信号，差分电压信号与环境成正比与晶体管相关的温度。

74. 发明授权

US08087823B2 Method for monitoring thermal control 有权
标题翻译：监控热控制的方法
公开(公告)号：US08087823B2
公开(公告)日：2012-01-03
申请号：US12193497
申请日：2008-08-18
申请人： Francois Aube , Timothy M. Curtin , Matthew S. Grady , Thomas P. Scanlon , Eric N. Smith
发明人： Francois Aube , Timothy M. Curtin , Matthew S. Grady , Thomas P. Scanlon , Eric N. Smith
IPC分类号： G01K1/00 , G01K7/00 , G01K3/00 , H01L35/00
CPC分类号： G01K7/01 , G01K15/00 , G01R31/2874
摘要： A structure has a heat dissipating feature, an internal temperature measurement device, and a memory. The structure generates heat as power is supplied to the structure, and a threshold voltage of the internal temperature measurement device changes as the temperature of the temperature measurement device changes. The embodiments herein establish a linear relationship between temperature and threshold voltage by heating the structure to a first temperature and recording a first threshold voltage, and then heating the structure to a second temperature and recording a second threshold voltage. From this, the embodiments herein calculate a linear relationship between temperature and threshold voltage. Further, the embodiments herein can calculate the temperatures of the structure based only upon the linear relationship and threshold voltages measured from internal temperature measurement device.
摘要翻译：结构具有散热特征，内部温度测量装置和存储器。该结构在向结构供电时产生热量，并且内部温度测量装置的阈值电压随温度测量装置的温度变化而变化。本文的实施例通过将结构加热到第一温度并记录第一阈值电压，然后将结构加热到第二温度并记录第二阈值电压来建立温度和阈值电压之间的线性关系。由此，这里的实施例计算温度和阈值电压之间的线性关系。此外，这里的实施例可以仅基于从内部温度测量装置测量的线性关系和阈值电压来计算结构的温度。

75. 发明申请

US20110316113A1 PYROELECTRIC DETECTOR, PYROELECTRIC DETECTION DEVICE, AND ELECTRONIC INSTRUMENT 有权
标题翻译：光电检测器，光电检测装置和电子仪器
公开(公告)号：US20110316113A1
公开(公告)日：2011-12-29
申请号：US13166937
申请日：2011-06-23
申请人： Takafumi Noda
发明人： Takafumi Noda
IPC分类号： H01L35/00
CPC分类号： G01J5/34
摘要： A pyroelectric detector includes a pyroelectric detection element, a support member, and a support part. The pyroelectric detection element has a capacitor including a first electrode, a second electrode, and a pyroelectric body disposed between the first and second electrodes, and a first reducing gas barrier layer that protects the capacitor from reducing gas. The support member includes first and second sides with the pyroelectric detection element being mounted on the first side and the second side facing a cavity. The support member has a mounting member on which the capacitor is mounted and an arm member linked to the mounting member. The support part supports a portion of the support member. An outer peripheral edge of the first reducing gas barrier layer is disposed between and spaced apart from an outer peripheral edge of the mounting member and an outer peripheral edge of the capacitor in plan view.
摘要翻译：热电检测器包括热电检测元件，支撑元件和支撑部件。热电检测元件具有包括第一电极，第二电极和布置在第一和第二电极之间的热电体的电容器，以及保护电容器免于还原气体的第一还原气体阻挡层。支撑构件包括第一和第二侧，其中热电检测元件安装在第一侧上，第二侧面向空腔。支撑构件具有其上安装有电容器的安装构件和连接到安装构件的臂构件。支撑部分支撑支撑构件的一部分。第一还原性气体阻隔层的外周缘设置在安装构件的外周边缘之间并且与平面图中的电容器的外周边缘隔开。

76. 发明申请

US20110316112A1 PYROELECTRIC DETECTOR, PYROELECTRIC DETECTION DEVICE, AND ELECTRONIC INSTRUMENT 有权
标题翻译：光电检测器，光电检测装置和电子仪器
公开(公告)号：US20110316112A1
公开(公告)日：2011-12-29
申请号：US13166924
申请日：2011-06-23
申请人： Takafumi NODA
发明人： Takafumi NODA
IPC分类号： H01L35/00
CPC分类号： G01J5/02 , G01J5/024 , G01J5/0285 , G01J5/04 , G01J5/046 , G01J5/08 , G01J5/0853 , G01J5/34 , H01L37/02
摘要： A pyroelectric detector includes a pyroelectric detection element, a support member and a support part. The pyroelectric detection element has a capacitor including a first electrode, a second electrode, and a pyroelectric body. The support member includes first and second sides with the pyroelectric detection element being mounted on the first side and the second side facing a cavity. The support part, the support member, and the pyroelectric detection element are laminated in this order in a first direction with the cavity being formed between the support part and the support member. The support member has at least a first insulation layer on the first side contacting the first electrode, with the first insulation layer having a hydrogen content rate smaller than a hydrogen content rate of a second insulation layer positioned further in a second direction than the first insulation layer, the second direction being opposite the first direction.
摘要翻译：热电检测器包括热电检测元件，支撑元件和支撑部件。热电检测元件具有包括第一电极，第二电极和热电体的电容器。支撑构件包括第一和第二侧，其中热电检测元件安装在第一侧上，第二侧面向空腔。支撑部件，支撑部件和热电检测元件以第一方向依次层压，其中空腔形成在支撑部件和支撑部件之间。所述支撑构件在与所述第一电极接触的第一侧上具有至少第一绝缘层，所述第一绝缘层的氢含量比小于位于比所述第一绝缘体更靠第二绝缘层的第二绝缘层的第二绝缘层的氢含量率第二方向与第一方向相反。

77. 发明授权

US08072259B1 Voltage reference and supply voltage level detector circuits using proportional to absolute temperature cells 有权
标题翻译：使用与绝对温度单位成比例的电压参考和电源电压电平检测器电路
公开(公告)号：US08072259B1
公开(公告)日：2011-12-06
申请号：US12112933
申请日：2008-04-30
申请人： Tacettin Isik
发明人： Tacettin Isik
IPC分类号： G05F3/02 , H01L35/00
CPC分类号： G05F3/242
摘要： N-channel field effect transistor Proportional To Absolute Temperature (N-PTAT) cells are connected to a first supply voltage and P-channel field effect transistor Proportional To Absolute Temperature (P-PTAT) cells are connected to a second supply voltage. A coupling circuit connects at least one of the N-PTAT cells to at least one of the P-PTAT cells. These circuits can be used to provide a voltage reference and/or a supply voltage level detector. Related operating methods are also described.
摘要翻译： N沟道场效应晶体管比例绝对温度（N-PTAT）单元连接到第一电源电压，P沟道场效应晶体管比例绝对温度（P-PTAT）单元连接到第二电源电压。耦合电路将至少一个N-PTAT电池连接到P-PTAT电池中的至少一个。这些电路可用于提供电压基准和/或电源电压电平检测器。还描述了相关的操作方法。

78. 发明授权

US08025814B2 Resin composition and molded article using the same 有权
标题翻译：树脂组合物和使用其的成型品
公开(公告)号：US08025814B2
公开(公告)日：2011-09-27
申请号：US12487272
申请日：2009-06-18
申请人： Tomoko Uehara , Tomoya Hosoda , Satoshi Okamoto
发明人： Tomoko Uehara , Tomoya Hosoda , Satoshi Okamoto
IPC分类号： C09K19/52 , C09K19/06 , C09K19/00 , H01L35/00 , H01Q1/36
CPC分类号： C09K19/3809 , C08K3/22 , C08K2003/2206 , C08K2003/221 , C08K2003/2237 , C09K19/52 , H01Q1/364 , Y10T428/10
摘要： The present invention provides a resin composition comprising a liquid crystal polymer and a filler comprising a composite oxide containing Ba, Sm, and Ti. The resin composition can provide a molded article which has excellent dielectric characteristics and is excellent in dimension stability.
摘要翻译：本发明提供一种包含液晶聚合物和包含含有Ba，Sm和Ti的复合氧化物的填料的树脂组合物。树脂组合物可以提供具有优异的介电特性并且尺寸稳定性优异的成型体。

79. 发明申请

US20110204957A1 SEMICONDUCTOR INTEGRATED CIRCUIT AND OPERATION METHOD FOR THE SAME 审中-公开
标题翻译：半导体集成电路及其操作方法
公开(公告)号：US20110204957A1
公开(公告)日：2011-08-25
申请号：US13102149
申请日：2011-05-06
申请人： TADASHI KAMEYAMA , Takayasu Ito , Seiichi Saito , Koji Sato
发明人： TADASHI KAMEYAMA , Takayasu Ito , Seiichi Saito , Koji Sato
IPC分类号： H01L35/00
CPC分类号： G05F3/30 , G05F3/227
摘要： The semiconductor integrated circuit is provided, in which an external temperature control or temperature monitoring is possible, with little influence by the noise of a system board which mounts the semiconductor integrated circuit. The semiconductor integrated circuit includes the temperature detection circuit which detects the chip temperature, and the functional module which flows a large operating current. An external terminal which supplies operating voltage, and an external terminal which supplies ground voltage are coupled to the functional module. The temperature detection circuit generates a temperature detection signal and a reference signal. The reference signal and the temperature detection signal are led out to the exterior of the semiconductor integrated circuit via a first external output terminal and a second external output terminal, respectively, and are supplied to an external temperature control/monitoring circuit which has a circuitry type of a differential amplifier circuit.
摘要翻译：提供了半导体集成电路，其中可以进行外部温度控制或温度监视，几乎不受安装半导体集成电路的系统板的噪声的影响。半导体集成电路包括检测芯片温度的温度检测电路和流过大的工作电流的功能模块。提供工作电压的外部端子和提供接地电压的外部端子耦合到功能模块。温度检测电路产生温度检测信号和参考信号。参考信号和温度检测信号分别经由第一外部输出端子和第二外部输出端子被引出到半导体集成电路的外部，并且被提供给具有电路类型的外部温度控制/监视电路的差分放大电路。

80. 发明申请

US20110187441A1 Temperature Compensation Via Power Supply Modification to Produce a Temperature-Independent Delay in an Integrated Circuit 有权
标题翻译：通过电源修改实现温度补偿，以在集成电路中产生与温度无关的延迟
公开(公告)号：US20110187441A1
公开(公告)日：2011-08-04
申请号：US13087654
申请日：2011-04-15
申请人： David Zimlich
发明人： David Zimlich
IPC分类号： H01L35/00
CPC分类号： H03L7/0812 , H03L1/022 , H03L7/0814
摘要： A method and circuitry for adjusting the delay of a variable delay line (VDL) in a delay locked loop (DLL) or other delay element or subcircuit on an integrated circuit is disclosed. Such delay circuitry will inherently have a delay which is a function of temperature. In accordance with embodiments of the invention, such temperature-dependent delays are compensated for by adjusting the power supply voltage of the VDL, delay element, or subcircuit. Specifically, a temperature sensing stage is used to sense the temperature of the integrated circuit, and hence the VDL, delay element, or subcircuit. Information concerning the sensed temperature is sent to a regulator which derives the local power supply voltage from the master power supply voltage, Vcc, of the integrated circuit. If the temperature sensed is relatively high, which otherwise would increase the delay though the VDL, delay element, or subcircuit, the regulator increases the local power supply voltage, thus decreasing the delay and offsetting the increase in delay due to temperature. Through this scheme, and assuming the temperature sensing stage is properly tuned, temperature-dependent delays can be reduced to approximately zero.
摘要翻译：公开了一种用于调整延迟锁定环（DLL）中的可变延迟线（VDL）或集成电路上的其他延迟元件或分支电路的延迟的方法和电路。这种延迟电路固有地具有作为温度的函数的延迟。根据本发明的实施例，通过调节VDL，延迟元件或子电路的电源电压来补偿这种依赖于温度的延迟。具体地，使用温度感测级来感测集成电路的温度，并因此检测VDL，延迟元件或子电路。关于感测温度的信息被发送到从集成电路的主电源电压Vcc导出本地电源电压的调节器。如果感测到的温度相对较高，否则会增加VDL，延迟元件或分支电路的延迟，调节器会增加本地电源电压，从而减少延迟并抵消由于温度引起的延迟增加。通过该方案，假设温度感测级被适当地调节，温度依赖的延迟可以减少到大约为零。

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