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81. 发明申请

US20120193738A1 TMR Device with Low Magnetorestriction Free Layer 有权
标题翻译：低磁阻自由层的TMR器件
公开(公告)号：US20120193738A1
公开(公告)日：2012-08-02
申请号：US13444497
申请日：2012-04-11
申请人： Hui-Chuan Wang , Tong Zhao , Min Li , Kunliang Zhang
发明人： Hui-Chuan Wang , Tong Zhao , Min Li , Kunliang Zhang
IPC分类号： H01L29/82
CPC分类号： H01L43/10 , B82Y10/00 , B82Y25/00 , G01R33/093 , G01R33/18 , G11B5/3906 , G11B5/3909 , G11B5/3912 , G11B2005/3996 , G11C11/161 , H01F10/3254 , H01F10/3272 , H01F10/3295 , H01L43/08 , H01L43/12
摘要： A high performance TMR sensor is fabricated by employing a free layer with a trilayer configurations represented by FeCo/CoFeB/CoB, FeCo/CoB/CoFeB, FeCo/CoFe/CoB, or FeCo/FeB/CoB may also be employed. Alternatively, CoNiFeB or CoNiFeBM formed by co-sputtering CoB with CoNiFe or CoNiFeM, respectively, where M is V, Ti, Zr, Nb, Hf, Ta, or Mo may be included in a composite free layer or as a single free layer in the case of CoNiFeBM. A 15 to 30% in improvement in TMR ratio over a conventional CoFe/NiFe free layer is achieved while maintaining low Hc and RA
摘要翻译：通过采用由FeCo / CoFeB / CoB，FeCo / CoB / CoFeB，FeCo / CoFe / CoB或FeCo / FeB / CoB表示的三层结构的自由层制造高性能TMR传感器。或者，通过共溅射CoB与CoNiFe或CoNiFeM（其中M是V，Ti，Zr，Nb，Hf，Ta或Mo）分别形成的CoNiFeB或CoNiFeBM可以包括在复合自由层中或作为单个自由层 CoNiFeBM的情况。在保持低Hc和RA <3欧姆 - um2的同时，实现了常规CoFe / NiFe自由层的TMR比提高15至30％。在双层或三层实施例中，通过组合CoB（-λ）和一个或多个具有正λ的层来实现-5×10-6和5×10-6之间的磁致伸缩（λ）。

82. 发明授权

US08208219B2 Modified field generation layer for microwave assisted magnetic recording 有权
标题翻译：微波辅助磁记录修改场产生层
公开(公告)号：US08208219B2
公开(公告)日：2012-06-26
申请号：US12927083
申请日：2010-11-05
申请人： Kunliang Zhang , Min Li , Yuchen Zhou
发明人： Kunliang Zhang , Min Li , Yuchen Zhou
IPC分类号： G11B5/127
CPC分类号： G11B5/1278 , G11B5/3133 , G11B2005/001 , G11B2005/0024
摘要： A spin torque oscillator is described in which the conventional Field Generation Layer (FGL) is replaced by a bilayer, one of whose members exhibits perpendicular magnetic anisotropy while the other exhibits conventional in-plane anisotropy. Provided the layer with the perpendicular anisotropy is the one that is closest to the spacer layer, the device is able to generate microwaves at current densities as low as 1×108 A/cm2.
摘要翻译：描述了一种自旋扭矩振荡器，其中常规的场产生层（FGL）由双层代替，其中一个构件呈现垂直的磁各向异性，而另一个表现出常规的面内各向异性。如果具有垂直各向异性的层是最接近间隔层的层，该器件能够产生低至1×108A / cm 2的电流密度的微波。

83. 发明申请

US20120128870A1 TMR DEVICE WITH IMPROVED MGO BARRIER 有权
标题翻译：具有改进的MGO障碍物的TMR装置
公开(公告)号：US20120128870A1
公开(公告)日：2012-05-24
申请号：US12927698
申请日：2010-11-22
申请人： Tong Zhao , Hui-Chuan Wang , Min Li , Kunliang Zhang
发明人： Tong Zhao , Hui-Chuan Wang , Min Li , Kunliang Zhang
IPC分类号： H01F1/047
CPC分类号： H01F41/307 , B82Y40/00 , G11C11/161 , H01L43/12
摘要： A method of forming a high performance magnetic tunnel junction (MTJ) is disclosed wherein the tunnel barrier includes at least three metal oxide layers. The tunnel barrier stack is partially built by depositing a first metal layer, performing a natural oxidation (NOX) process, depositing a second metal layer, and performing a second NOX process to give a MOX1/MOX2 configuration. An uppermost metal layer on the MOX2 layer is not oxidized until after the MTJ stack is completely formed and an annealing process is performed to drive unreacted oxygen in the MOX1 and MOX2 layers into the uppermost metal layer. In an alternative embodiment, a plurality of metal oxide layers is formed on the MOX1 layer before the uppermost metal layer is deposited. The resulting MTJ stack has an ultralow RA around 1 ohm-μm2 and maintains a high magnetoresistive ratio characteristic of a single metal oxide tunnel barrier layer.
摘要翻译：公开了一种形成高性能磁隧道结（MTJ）的方法，其中隧道势垒包括至少三个金属氧化物层。通过沉积第一金属层，执行自然氧化（NOX）工艺，沉积第二金属层以及执行第二NOX工艺以产生MOX1 / MOX2配置来部分构建隧道势垒堆叠。在MOX2层上的最上层的金属层直到MTJ堆叠完全形成之后才被氧化，并且进行退火处理以将MOX1和MOX2层中的未反应的氧气驱入最上层的金属层。在替代实施例中，在最上层金属层被沉积之前，在MOX1层上形成多个金属氧化物层。所得到的MTJ堆叠具有约1欧姆 - μm2的超低RA，并且保持单个金属氧化物隧道势垒层的高磁阻比特性。

84. 发明授权

US08105703B2 Process for composite free layer in CPP GMR or TMR device 有权
标题翻译： CPP GMR或TMR装置中复合自由层的工艺
公开(公告)号：US08105703B2
公开(公告)日：2012-01-31
申请号：US12214503
申请日：2008-06-19
申请人： Hui-Chuan Wang , Min Li , Tong Zhao , Kunliang Zhang , Chyu-Jiuh Torng
发明人： Hui-Chuan Wang , Min Li , Tong Zhao , Kunliang Zhang , Chyu-Jiuh Torng
IPC分类号： G11B5/33 , G11B5/39 , G11B5/127
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3909 , G11B5/3929 , G11B2005/3996 , Y10T29/49044 , Y10T428/11 , Y10T428/1107 , Y10T428/1121 , Y10T428/1129
摘要： The conventional free layer in a CPP GMR or TMR read head has been replaced by a tri-layer laminate comprising Co rich CoFe, moderately Fe rich NiFe, and heavily Fe rich NiFe. The result is an improved device that has a higher MR ratio than prior art devices, while still maintaining free layer softness and acceptable magnetostriction. A process for manufacturing the device is described.
摘要翻译： CPP GMR或TMR读取头中的常规自由层已经被包含富钴CoFe，中等富Fe的NiFe和大量富Fe NiFe的三层层压体所代替。结果是具有比现有技术的装置更高的MR比的改进的装置，同时仍然保持自由层柔软性和可接受的磁致伸缩。描述了用于制造该装置的方法。

85. 发明申请

US20120009337A1 Novel CPP device with an enhanced dR/R ratio 审中-公开
标题翻译：具有增强的dR / R比的新型CPP装置
公开(公告)号：US20120009337A1
公开(公告)日：2012-01-12
申请号：US13200013
申请日：2011-09-15
申请人： Kunliang Zhang , Min Li , Moris Dovek , Yue Liu
发明人： Kunliang Zhang , Min Li , Moris Dovek , Yue Liu
IPC分类号： G11B5/31 , C23C14/34
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G11B5/3906 , G11B2005/3996 , Y10T29/49039 , Y10T29/49043 , Y10T29/49044
摘要： A CPP-GMR spin valve having a composite spacer layer comprised of at least one metal (M) layer and at least one semiconductor or semi-metal (S) layer is disclosed. The composite spacer may have a M/S, S/M, M/S/M, S/M/S, M/S/M/S/M, or a multilayer (M/S/M)n configuration where n is an integer≧1. The pinned layer preferably has an AP2/coupling/AP1 configuration wherein the AP2 portion is a FCC trilayer represented by CoZFe(100-Z)/FeYCo(100-Y)/CoZFe(100-Z) where y is 0 to 60 atomic %, and z is 75 to 100 atomic %. In one embodiment, M is Cu with a thickness from 0.5 to 50 Angstroms and S is ZnO with a thickness of 1 to 50 Angstroms. The S layer may be doped with one or more elements. The dR/R ratio of the spin valve is increased to 10% or greater while maintaining acceptable EM and RA performance.
摘要翻译：公开了具有由至少一个金属（M）层和至少一个半导体或半金属（S）层组成的复合间隔层的CPP-GMR自旋阀。复合间隔物可以具有M / S，S / M，M / S / M，S / M / S，M / S / M / S / M或多层（M / S / M）是整数≧1。钉扎层优选具有AP2 /耦合/ AP1配置，其中AP2部分是由CoZFe（100-Z）/ FeYCo（100-Y）/ CoZFe（100-Z）表示的FCC三层，其中y为0至60原子％，z为75〜100原子％。在一个实施方案中，M是厚度为0.5至50埃的Cu，S是厚度为1至50埃的ZnO。 S层可以掺杂有一个或多个元素。自旋阀的dR / R比提高到10％以上，同时保持可接受的EM和RA性能。

86. 发明申请

US20110293967A1 Multilayer structure with high perpendicular anisotropy for device applications 有权
标题翻译：用于器件应用的具有高垂直各向异性的多层结构
公开(公告)号：US20110293967A1
公开(公告)日：2011-12-01
申请号：US12802091
申请日：2010-05-28
申请人： Kunliang Zhang , Min Li , Yuchen Zhou
发明人： Kunliang Zhang , Min Li , Yuchen Zhou
IPC分类号： G11B5/66 , B05D3/06
CPC分类号： G11B5/84 , G01R33/098 , G11B5/3932 , G11B5/66 , G11B5/732 , G11B5/7325 , G11B2005/0024 , G11C11/16 , G11C11/161 , G11C11/1659 , G11C11/1673 , G11C11/1675 , Y10T428/1114
摘要： Perpendicular magnetic anisotropy and Hc are enhanced in magnetic devices with a Ta/M1/M2 seed layer where M1 is preferably Ti, and M2 is preferably Cu, and including an overlying (Co/Ni)X multilayer (x is 5 to 50) that is deposited with ultra high Ar pressure of >100 sccm to minimize impinging energy that could damage (Co/Ni)X interfaces. In one'embodiment, the seed layer is subjected to one or both of a low power plasma treatment and natural oxidation process to form a more uniform interface with the (Co/Ni)X multilayer. Furthermore, an oxygen surfactant layer may be formed at one or more interfaces between adjoining (Co/Ni)X layers in the multilayer stack. Annealing at temperatures between 180° C. and 400° C. also increases Hc but the upper limit depends on whether the magnetic device is MAMR, MRAM, a hard bias structure, or a perpendicular magnetic medium.
摘要翻译：在具有Ta优选为Ti的Ta / M1 / M2种子层的磁性装置中，垂直磁各向异性和Hc增强，并且M2优选为Cu，并且包括覆盖（Co / Ni）X多层（x为5至50），以超过100 sccm的超高Ar压力沉积，以尽量减少可能损坏（Co / Ni）X界面的冲击能量。在一个实施例中，种子层经受低功率等离子体处理和天然氧化过程中的一种或两种以与（Co / Ni）X多层形成更均匀的界面。此外，可以在多层叠层中的相邻（Co / Ni）X层之间的一个或多个界面处形成氧表面活性剂层。在180°C至400°C的温度下退火也会增加Hc，但上限取决于磁性装置是MAMR，MRAM，硬偏压结构还是垂直磁介质。

87. 发明申请

US20110265325A1 CPP device with a plurality of metal oxide templates in a confining current path (CCP) spacer 审中-公开
公开(公告)号：US20110265325A1
公开(公告)日：2011-11-03
申请号：US13135620
申请日：2011-07-11
申请人： Kunliang Zhang , Min Li , Yue Liu , Hideaki Fukuzawa , Hiromi Yuasa
发明人： Kunliang Zhang , Min Li , Yue Liu , Hideaki Fukuzawa , Hiromi Yuasa
IPC分类号： H01B19/00
CPC分类号： H01F41/307 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G01R33/093 , G11B5/3106 , G11B5/313 , G11B5/3929 , G11B2005/3996 , H01F10/3259 , H01F10/3268 , H01L43/08 , Y10T29/49032 , Y10T29/49043 , Y10T29/49227
摘要： A novel CCP scheme is disclosed for a CPP-GMR sensor in which an amorphous metal/alloy layer such as Hf is inserted between a lower Cu spacer and an oxidizable layer such as Al, Mg, or AlCu prior to performing a pre-ion treatment (PIT) and ion assisted oxidation (IAO) to transform the amorphous layer into a first metal oxide template and the oxidizable layer into a second metal oxide template both having Cu metal paths therein. The amorphous layer promotes smoothness and smaller grain size in the oxidizable layer to minimize variations in the metal paths and thereby improves dR/R, R, and dR uniformity by 50% or more. An amorphous Hf layer may be used without an oxidizable layer, or a thin Cu layer may be inserted in the CCP scheme to form a Hf/PIT/IAO or Hf/Cu/Al/PIT/IAO configuration. A double PIT/IAO process may be used as in Hf/PIT/IAO/Al/PIT/IAO or Hf/PIT/IAO/Hf/PIT/IAO schemes.

88. 发明授权

US08031445B2 Low noise magneto-resistive sensor utilizing magnetic noise cancellation 有权
标题翻译：利用磁噪声消除的低噪声磁阻传感器
公开(公告)号：US08031445B2
公开(公告)日：2011-10-04
申请号：US12287279
申请日：2008-10-08
申请人： Yuchen Zhou , Kunliang Zhang , Yu-Hsai Chen , Tong Zhao , Moris Dovek
发明人： Yuchen Zhou , Kunliang Zhang , Yu-Hsai Chen , Tong Zhao , Moris Dovek
IPC分类号： G11B5/127
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G11B5/3929 , G11B2005/3996
摘要： A magnetic sensor, formed from a pair of magnetically free layers located on opposing sides of a non-magnetic layer, and method for its manufacture, are described. Biasing these free layers to be roughly orthogonal to one another causes them to be magnetostatically coupled in a weak antiferromagnetic mode. This enables the low frequency noise spectra of the two free layers to cancel one another. Careful control of the SH/TW ratio is an important feature of the device.
摘要翻译：描述了由位于非磁性层的相对侧上的一对磁性层形成的磁传感器及其制造方法。使这些自由层彼此大致正交地使它们以弱反铁磁模式静磁耦合。这使得两个自由层的低频噪声谱彼此抵消。仔细控制SH / TW比是设备的一个重要特征。

89. 发明申请

US20110014390A1 Enhanced hard bias in thin film magnetoresistive sensors with perpendicular easy axis growth of hard bias and strong shield-hard bias coupling 有权
标题翻译：在薄膜磁阻传感器中增强了硬偏置，具有垂直的容易轴生长的硬偏置和强的屏蔽 - 硬偏置耦合
公开(公告)号：US20110014390A1
公开(公告)日：2011-01-20
申请号：US12924363
申请日：2010-09-24
申请人： Yuchen Zhou , Kenichi Takano , Kunliang Zhang
发明人： Yuchen Zhou , Kenichi Takano , Kunliang Zhang
IPC分类号： B05D5/00 , B05D3/00
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G11B5/3932 , G11B2005/3996 , Y10T29/49032 , Y10T29/49034 , Y10T29/49043 , Y10T29/49046 , Y10T428/1107 , Y10T428/115
摘要： A hard bias (HB) structure for longitudinally biasing a free layer in a MR sensor is disclosed that is based on HB easy axis growth perpendicular to an underlying seed layer which is formed above a substrate and along two sidewalls of the sensor. In one embodiment, a conformal soft magnetic layer that may be a top shield contacts the HB layer to provide direct exchange coupling that compensates HB surface charges. Optionally, a thin capping layer on the HB layer enables magneto-static shield-HB coupling. After HB initialization, HB regions along the sensor sidewalls have magnetizations that are perpendicular to the sidewalls as a result of surface charges near the seed layer. Sidewalls may be extended into the substrate (bottom shield) to give enhanced protection against side reading. The top surface of the seed layer may be amorphous or crystalline to promote HB easy axis perpendicular growth.
摘要翻译：公开了用于纵向偏置MR传感器中的自由层的硬偏置（HB）结构，其基于垂直于衬底上并且沿着传感器的两个侧壁形成的下层种子层的HB易轴生长。在一个实施例中，可以是顶部屏蔽的共形软磁性层与HB层接触以提供补偿HB表面电荷的直接交换耦合。可选地，HB层上的薄覆盖层可实现磁静电屏蔽-HB耦合。在HB初始化之后，沿着传感器侧壁的HB区域由于种子层附近的表面电荷而具有垂直于侧壁的磁化。侧壁可以延伸到基板（底部屏蔽）中，以提供更强的防侧读保护。种子层的顶表面可以是无定形的或结晶的以促进HB易轴垂直生长。

90. 发明申请

US20110013321A1 Enhanced hard bias in thin film magnetoresistive sensors with perpendicular easy axis growth of hard bias and strong shield-hard bias coupling 有权
公开(公告)号：US20110013321A1
公开(公告)日：2011-01-20
申请号：US12924364
申请日：2010-09-24
申请人： Yuchen Zhou , Kenichi Takano , Kunliang Zhang
发明人： Yuchen Zhou , Kenichi Takano , Kunliang Zhang
IPC分类号： G11B5/127
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G11B5/3932 , G11B2005/3996 , Y10T29/49032 , Y10T29/49034 , Y10T29/49043 , Y10T29/49046 , Y10T428/1107 , Y10T428/115
摘要： A hard bias (HB) structure for longitudinally biasing a free layer in a MR sensor is disclosed that is based on HB easy axis growth perpendicular to an underlying seed layer which is formed above a substrate and along two sidewalls of the sensor. In one embodiment, a conformal soft magnetic layer that may be a top shield contacts the HB layer to provide direct exchange coupling that compensates HB surface charges. Optionally, a thin capping layer on the HB layer enables magneto-static shield-HB coupling. After HB initialization, HB regions along the sensor sidewalls have magnetizations that are perpendicular to the sidewalls as a result of surface charges near the seed layer. Sidewalls may be extended into the substrate (bottom shield) to give enhanced protection against side reading. The top surface of the seed layer may be amorphous or crystalline to promote HB easy axis perpendicular growth.

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