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81. 发明申请

US20060215341A1 Electric power conversion device 有权
标题翻译：电力转换装置
公开(公告)号：US20060215341A1
公开(公告)日：2006-09-28
申请号：US11338668
申请日：2006-01-25
申请人： Naoki Sakurai , Mutsuhiro Mori
发明人： Naoki Sakurai , Mutsuhiro Mori
IPC分类号： H02H3/00
CPC分类号： H03K17/0828 , H01L2924/0002 , H03K2017/0806 , H01L2924/00
摘要： An object of the present invention is to provide an electric power converter including means for accurately detecting a principal current of IGBT. An electric power conversion device according to the present invention includes principal current estimation means for estimating a principal current by using: an output of temperature measuring means whose diode is disposed in the same semiconductor substrate as an IGBT including an emitter having flowing therethrough the principal current and a sense emitter having flowing therethrough a sense current proportional to the principal current; the sense current; and the information, preliminarily stored in memory means, on the relationship among the semiconductor substrate temperature, the principal current and the sense currant.
摘要翻译：本发明的目的是提供一种电力转换器，其包括用于精确地检测IGBT的主电流的装置。根据本发明的电力转换装置包括：主电流估计装置，用于通过使用以下方式估计主电流的温度测量装置的输出：其二极管设置在与包括流过其中的主电流的IGBT的IGBT相同的半导体衬底中以及感测发射器，其通过与主电流成比例的感测电流流动; 感应电流; 以及预先存储在存储装置中的信息，关于半导体衬底温度，主电流和感应浓度范围之间的关系。

82. 发明申请

US20050247281A1 Engine driving system 审中-公开
公开(公告)号：US20050247281A1
公开(公告)日：2005-11-10
申请号：US11168461
申请日：2005-06-29
申请人： Kyoko HONBO , Masanori Sakai , Mutsuhiro Mori , Shinji Shirakawa , Junichi Sakano , Yasuo Kondo , Tokiyoshi Hirasawa , Masayuki Terada , Takayuki Kimura
发明人： Kyoko HONBO , Masanori Sakai , Mutsuhiro Mori , Shinji Shirakawa , Junichi Sakano , Yasuo Kondo , Tokiyoshi Hirasawa , Masayuki Terada , Takayuki Kimura
IPC分类号： F02N15/00 , F02N11/00 , F02N11/08 , F02N11/14 , H01M2/18 , H01M4/20 , H01M4/56 , H01M4/68 , H01M10/06 , H01M10/12 , H01M10/14
CPC分类号： F02N11/0862 , F02N11/0825 , F02N11/14 , H01M4/20 , H01M4/685 , H01M10/125 , H01M10/14 , Y02E60/126
摘要： Disclosed is an engine driving system having a cell suitable for restarting an engine, wherein an engine is stopped at the time of stopping running of a vehicle and the engine is restarted at the time of starting running of the vehicle, there are provided an engine electronic control device for controlling the engine, a motor for restarting the engine and a cell for supplying an electrical power to the motor; the cell comprises an anode plate formed into a thin band-shape, a cathode plate formed into a thin band-shape and a band-like separator arranged between the anode plate and the cathode plate; and the anode plate, the cathode plate and the separator form a group of wound pole plates and the group of pole plates is immersed in electrolysis solution.

83. 发明授权

US06498368B2 Power semiconductor device 失效
标题翻译：功率半导体器件
公开(公告)号：US06498368B2
公开(公告)日：2002-12-24
申请号：US09733098
申请日：2000-12-11
申请人： Kozo Sakamoto , Yosuke Inoue , Akihiro Miyauchi , Masaki Shiraishi , Mutsuhiro Mori , Atsuo Watanabe , Takasumi Ohyanagi
发明人： Kozo Sakamoto , Yosuke Inoue , Akihiro Miyauchi , Masaki Shiraishi , Mutsuhiro Mori , Atsuo Watanabe , Takasumi Ohyanagi
IPC分类号： H01L31119
CPC分类号： H01L29/7813 , H01L29/045 , H01L29/0619 , H01L29/0634 , H01L29/0878 , H01L29/1095 , H01L29/4236 , H01L29/4238 , H01L29/66727 , H01L29/66734 , H01L29/732 , H01L29/7397 , H01L29/7722 , H01L29/7811 , H01L29/872
摘要： In a semiconductor device having a first terminal 101 (source terminal) and a second terminal 102 (drain terminal), the substrate main surface of a semiconductor chip is on the (110) face, the main contact face of an n-type region 2 and a p-type region 4 is the {111} face perpendicular to the (110) face, elongated n-type regions 2 and elongated p-type regions 4, which are arranged alternately, form a voltage holding area. The first terminal 101 is connected to the p-type regions through wiring, and the second terminal 102 is connected to the n-type regions 2. Also, the p-type region is formed to cover the bottom comers of a gate polycrystalline silicon layer 8.
摘要翻译：在具有第一端子101（源极端子）和第二端子102（漏极端子）的半导体器件中，半导体芯片的基板主表面在（110）面上，n型区域2的主接触面并且p型区域4是垂直于（110）面的{111}面，交替布置的细长n型区域2和细长p型区域4形成电压保持区域。第一端子101通过布线连接到p型区域，并且第二端子102连接到n型区域2.而且，形成p型区域以覆盖栅极多晶硅层的底部角 8。

84. 发明授权

US5731970A Power conversion device and semiconductor module suitable for use in the device 失效
标题翻译：电源转换装置和适用于该装置的半导体模块
公开(公告)号：US5731970A
公开(公告)日：1998-03-24
申请号：US473937
申请日：1995-06-07
申请人： Mutsuhiro Mori , Ryuichi Saito , Shin Kimura , Syuuji Saitoo , Kiyoshi Nakata , Akira Horie , Yoshihiko Koike , Shigeki Sekine
发明人： Mutsuhiro Mori , Ryuichi Saito , Shin Kimura , Syuuji Saitoo , Kiyoshi Nakata , Akira Horie , Yoshihiko Koike , Shigeki Sekine
IPC分类号： H01L23/04 , H01L23/24 , H01L25/07 , H02M7/00 , H02M7/48 , H02M7/487 , H03K17/0814 , H02M7/5387
CPC分类号： H02M7/487 , H01L23/04 , H01L23/24 , H01L24/49 , H01L25/072 , H02M7/003 , H03K17/08148 , H01L2224/45124 , H01L2224/48091 , H01L2224/48227 , H01L2224/49111 , H01L2224/49113 , H01L2224/73265 , H01L24/45 , H01L24/48 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01029 , H01L2924/01033 , H01L2924/01042 , H01L2924/01055 , H01L2924/01082 , H01L2924/014 , H01L2924/10253 , H01L2924/12032 , H01L2924/12036 , H01L2924/1301 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/19041 , H01L2924/30107 , H01L2924/351 , Y10S257/925
摘要： An inverter device includes plural modules, each module being formed by a series circuit having a parallel circuit of a first switching device and a first diode, and a parallel circuit of a second switching device and a second diode, allowing a reduced size, high reliability, high frequency switching and low noise. Each module forms one arm portion of the inverter. Lifetimes of the diodes and the switching devices are set in a manner to equalize losses in the inverter. Preferably, insulated gate bipolar transistors (IGBTs) formed by diffusion are used as the switching devices since the lifetimes of these devices can easily be adjusted to optimize design of the inverter.
摘要翻译：逆变器装置包括多个模块，每个模块由具有第一开关装置和第一二极管的并联电路的串联电路以及第二开关装置和第二二极管的并联电路形成，允许尺寸减小，可靠性高，高频开关和低噪声。每个模块形成逆变器的一个臂部分。二极管和开关器件的寿命设定为使逆变器的损耗相等。优选地，由扩散形成的绝缘栅双极晶体管（IGBT）用作开关器件，因为这些器件的寿命可以容易地被调整以优化逆变器的设计。

85. 发明授权

US5343052A Lateral insulated gate bipolar transistor 失效
标题翻译：横向绝缘栅双极晶体管
公开(公告)号：US5343052A
公开(公告)日：1994-08-30
申请号：US917990
申请日：1992-07-24
申请人： Tosifumi Oohata , Mutsuhiro Mori , Naoki Sakurai
发明人： Tosifumi Oohata , Mutsuhiro Mori , Naoki Sakurai
IPC分类号： H01L29/78 , H01L29/06 , H01L29/40 , H01L29/417 , H01L29/739 , H01L21/76 , H01L21/425 , H01L27/38
CPC分类号： H01L29/405 , H01L29/0696 , H01L29/41716 , H01L29/7393
摘要： A lateral insulated-gate bipolar transistor has a drift region having therein a base layer and a collector layer. An emitter layer is formed in the base layer. A gate electrode structure, comprising a control electrode and gate insulating layer, contacts the base layer, and also contacts the drift layer and the emitter layer. An emitter electrode contacts the emitter layer, and also the base layer, and a collector electrode contacts the collector layer. The emitter and collector electrodes are elongate and the ratio of their resistances per unit length is in the range of 0.5 to 2.0. This reduces the possibility of a localized high current density along the electrodes, thereby reducing the risk of latch-up due to parasitic thyristors. The collector and emitter electrodes may be of the same width and thickness, or of different widths and thicknesses, or may each have an auxiliary part (for example, in a multi-layer wiring arrangement), so that their resistances per unit length are in the desired range. A plurality of such transistors may be fabricated together in an array.
摘要翻译：横向绝缘栅双极晶体管具有其中具有基极层和集电极层的漂移区域。在基层中形成发射极层。包括控制电极和栅极绝缘层的栅电极结构接触基极层，并且还接触漂移层和发射极层。发射极电极与发射极层接触，并且基极层也接触集电极电极。发射极和集电极是细长的，其单位长度的电阻比在0.5至2.0的范围内。这降低沿着电极的局部高电流密度的可能性，从而降低由寄生晶闸管引起的闩锁的风险。集电极和发射极可以具有相同的宽度和厚度，或者具有不同的宽度和厚度，或者可以各自具有辅助部分（例如，在多层布线布置中），使得其每单位长度的电阻为所需范围。多个这样的晶体管可以一起制成阵列。

86. 发明授权

US5208471A Semiconductor device and manufacturing method therefor 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US5208471A
公开(公告)日：1993-05-04
申请号：US762793
申请日：1991-09-19
申请人： Mutsuhiro Mori , Yasumichi Yasuda , Yasunori Nakano
发明人： Mutsuhiro Mori , Yasumichi Yasuda , Yasunori Nakano
IPC分类号： H01L21/331 , H01L21/336 , H01L29/06 , H01L29/10 , H01L29/739 , H01L29/78
CPC分类号： H01L29/66719 , H01L29/1095 , H01L29/41741 , H01L29/66333 , H01L29/66712 , H01L29/7395 , H01L29/7811 , H01L29/0696
摘要： A semiconductor device comprises a semiconductor substrate, a semiconductor layer of a first conductivity type formed on said semiconductor substrate, a first semiconductor well region of a second conductivity type and second semiconductor well regions of the second conductivity type, the latter two types of regions being formed in said semiconductor layer. The first semiconductor well region is located at the peripheral area of the semiconductor, and the well is deeper than the well of the second semiconductor well regions. Third semiconductor well regions of the first conductivity type are formed in the second semiconductor well regions. Gate electrodes and an emitter (source) electrode are formed at specified positions on the upper surface of the semiconductor device, and a collector (drain) electrode is formed on the bottom surface.
摘要翻译：半导体器件包括半导体衬底，形成在所述半导体衬底上的第一导电类型的半导体层，第二导电类型的第一半导体阱区域和第二导电类型的第二半导体阱区域，后两个区域是形成在所述半导体层中。第一半导体阱区位于半导体的周边区域，阱比第二半导体阱区的阱深。第一导电类型的第三半导体阱区形成在第二半导体阱区中。在半导体器件的上表面上的特定位置处形成栅电极和发射极（源极），在底面形成集电极（漏极）电极。

87. 发明授权

US4466009A Light-activated semiconductor device with optic fiber moveable azimuthally and transversely 失效
标题翻译：具有光纤的光激活半导体器件可以方位角和横向移动
公开(公告)号：US4466009A
公开(公告)日：1984-08-14
申请号：US322698
申请日：1981-11-18
申请人： Nobutake Konishi , Mutsuhiro Mori , Tomoyuki Tanaka
发明人： Nobutake Konishi , Mutsuhiro Mori , Tomoyuki Tanaka
IPC分类号： G02B6/36 , G02B6/38 , G02B6/42 , H01L29/74 , H01L31/111 , H01L31/12 , H01L27/14
CPC分类号： G02B6/3858 , G02B6/3604 , G02B6/382 , G02B6/3825 , G02B6/3855 , G02B6/3897 , G02B6/421 , G02B6/4248 , G02B6/4292 , G02B6/4295 , H01L29/74 , H01L31/1113 , G02B6/4207
摘要： In a light-activated semiconductor device wherein a light-activated semiconductor element accommodated in a package is driven by a light signal fed from an external light source into the package through an optical guide, the optical guide comprises a first portion passing through the package and a second portion for optically coupling the first portion and the light-activated element.
摘要翻译：在光激活半导体器件中，其中容纳在封装中的光激活半导体元件通过光引导器从外部光源馈送到封装体中的光信号被驱动，光引导件包括穿过封装的第一部分和用于光学耦合第一部分和光激活元件的第二部分。

88. 发明授权

US09349847B2 Semiconductor device and power converter 有权
标题翻译：半导体器件和电源转换器
公开(公告)号：US09349847B2
公开(公告)日：2016-05-24
申请号：US14364959
申请日：2011-12-15
申请人： Takayuki Hashimoto , Mutsuhiro Mori
发明人： Takayuki Hashimoto , Mutsuhiro Mori
IPC分类号： H01L29/66 , H01L21/332 , H01L29/739 , H01L29/861 , H01L29/08 , H01L29/10 , H01L27/07 , H01L29/88 , H02M7/537
CPC分类号： H01L29/7397 , H01L27/0727 , H01L29/0834 , H01L29/1095 , H01L29/7395 , H01L29/861 , H01L29/88 , H02M7/537
摘要： A semiconductor device of this invention (an IGBT with a built-in diode) includes: an n−-type drift layer 1; a p-type channel region 2 that is arranged in contact with the surface side of this n−-type drift layer 1; a gate electrode 5 that is provided in a trench T provided so as to penetrate this p-type channel region 2 and reach to the n−-type drift layer 1 through a gate insulating film 3; an n-type source region 4 that is provided so as to contact the trench T on the surface side of the p-type channel region 2; a high-concentration n-type region 6 that is arranged in contact with the back side of the n−-type drift layer 1; and a high-concentration p-type region 7 that is arranged in contact with the back side of this high-concentration n-type region 6; in which a junction of the high-concentration n-type region 6 and the high-concentration p-type region 7 is a tunnel junction. According to this semiconductor device, it is possible to form the IGBT and the diode on a single chip. Moreover, it is possible to avoid problems of “snap back” and “current concentration.”
摘要翻译：本发明的半导体器件（具有内置二极管的IGBT）包括：n型漂移层1; 与该n型漂移层1的表面侧接触的p型沟道区域2; 设置在沟槽T中以设置成穿过该p型沟道区域2并通过栅极绝缘膜3到达n型漂移层1的栅电极5; n型源极区域4，其设置成与p型沟道区域2的表面侧的沟槽T接触; 配置成与n型漂移层1的背面接触的高浓度n型区域6; 以及与该高浓度n型区域6的背面接触的高浓度p型区域7; 其中高浓度n型区域6和高浓度p型区域7的结是隧道结。根据该半导体器件，可以在单个芯片上形成IGBT和二极管。此外，可以避免“回弹”和“当前集中”的问题。

89. 发明授权

US08422244B2 Power converter 有权
标题翻译：电源转换器
公开(公告)号：US08422244B2
公开(公告)日：2013-04-16
申请号：US13039520
申请日：2011-03-03
申请人： Katsunori Azuma , Masamitsu Inaba , Mutsuhiro Mori , Kenichiro Nakajima
发明人： Katsunori Azuma , Masamitsu Inaba , Mutsuhiro Mori , Kenichiro Nakajima
IPC分类号： H05K7/02 , H05K7/06 , H05K7/08 , H05K7/10
CPC分类号： H01G4/38 , B60K1/02 , B60K6/28 , B60K6/48 , B60L3/003 , B60L11/005 , B60L11/123 , B60L11/14 , B60L15/007 , B60L2200/26 , B60L2240/525 , B60L2270/145 , B60W10/06 , B60W10/08 , B60W20/00 , H01G2/04 , H01G4/228 , H01G9/008 , H01G9/08 , H01G9/14 , H01G9/26 , H01L2224/48091 , H01L2224/49111 , H01L2924/00011 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H02M7/003 , Y02T10/6217 , Y02T10/6221 , Y02T10/6286 , Y02T10/645 , Y02T10/7022 , Y02T10/7077 , H01L2924/00014 , H01L2924/00 , H01L2924/01033
摘要： A power converter structure in which the structure of a connecting portion is highly resistant against vibration and has a low inductance. The power converter structure includes a plurality of capacitors and a laminate made up of a first wide conductor and a second wide conductor joined in a layered form with an insulation sheet interposed between the first and second wide conductors. The laminate comprises a first flat portion including the plurality of capacitors which are supported thereon and electrically connected thereto, a second flat portion continuously extending from the first flat portion while being bent, and connecting portions formed at ends of the first flat portion and the second flat portion and electrically connected to the exterior.
摘要翻译：一种功率转换器结构，其中连接部分的结构具有高抗振动性和低电感性。功率转换器结构包括多个电容器和由第一宽导体和第二宽导体组成的层叠体，其以分层形式接合，并且绝缘片插入在第一和第二宽导体之间。层叠体包括：第一平坦部，其包括被支撑在其上并电连接的多个电容器;第二平坦部，其在弯曲的同时从第一平坦部连续地延伸;以及连接部，形成在第一平坦部和第二平坦部的端部平坦部分并且电连接到外部。

90. 发明申请

US20130020634A1 Semiconductor Device and Electric Power Conversion System Using The Same 失效
标题翻译：半导体器件及其使用的电力转换系统
公开(公告)号：US20130020634A1
公开(公告)日：2013-01-24
申请号：US13553431
申请日：2012-07-19
申请人： So WATANABE , Masaki Shiraishi , Hiroshi Suzuki , Mutsuhiro Mori
发明人： So WATANABE , Masaki Shiraishi , Hiroshi Suzuki , Mutsuhiro Mori
IPC分类号： H01L29/78
CPC分类号： H01L29/7397 , H01L29/0696 , H01L29/407 , H01L29/66348
摘要： A semiconductor device includes: a first semiconductor layer of a first conductivity type; a second semiconductor layer of a second conductivity type on the first semiconductor layer; trenches in the first semiconductor layer; a semiconductor protruding part on the first semiconductor layer; a third semiconductor layer on the semiconductor protruding part; a fourth semiconductor layer on the third semiconductor layer; a gate insulating layer disposed along the trench; a first interlayer insulating layer disposed along the trench; a first conductive layer facing to the fourth semiconductor layer; a second conductive layer on the first interlayer insulating layer; a second interlayer insulating layer covering the second conductive layer; a third conductive layer on the third semiconductor layer and fourth semiconductor layer; a contacting part connecting the third conductive layer and third semiconductor layer; and a fourth conductive layer formed on the second semiconductor layer.
摘要翻译：半导体器件包括：第一导电类型的第一半导体层; 在第一半导体层上的第二导电类型的第二半导体层; 第一半导体层中的沟槽; 在所述第一半导体层上的半导体突出部; 半导体突出部分上的第三半导体层; 第三半导体层上的第四半导体层; 栅极绝缘层，沿着沟槽设置; 沿沟槽设置的第一层间绝缘层; 面向第四半导体层的第一导电层; 在第一层间绝缘层上的第二导电层; 覆盖所述第二导电层的第二层间绝缘层; 在第三半导体层和第四半导体层上的第三导电层; 连接第三导电层和第三半导体层的接触部分; 以及形成在所述第二半导体层上的第四导电层。

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