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81. 发明申请

US20090155664A1 TRANSITION METAL NITRIDE, SEPARATOR FOR FUEL CELLS, FUEL CELL STACK, FUEL CELL VEHICLE, METHOD OF MANUFACTURING TRANSITION METAL NITRIDE, AND METHOD OF MANUFACTURING SEPARATOR FOR FUEL CELLS 审中-公开
标题翻译：过渡金属氮化物，燃料电池用分离器，燃料电池堆，燃料电池车，制造金属过渡金属的方法以及制造用于燃料电池的分离器的方法
公开(公告)号：US20090155664A1
公开(公告)日：2009-06-18
申请号：US12066020
申请日：2006-09-07
申请人： Noriko Uchiyama , Nobutaka Chiba , Makoto Kano
发明人： Noriko Uchiyama , Nobutaka Chiba , Makoto Kano
IPC分类号： H01M2/16 , C01B21/06
CPC分类号： H01M8/0282 , C22C38/44 , C23C8/24 , C23C8/36 , H01M8/0204 , H01M8/0208 , H01M8/021 , H01M8/0228 , H01M8/0267 , H01M8/242 , H01M2250/20 , Y02P70/56 , Y02T90/32
摘要： A transition metal nitride is obtained by a nitriding treatment of a surface of a base material including a transition metal or an alloy of the transition metal, and the transition metal nitride has a crystal structure of an M4N type and a crystal structure of an ε-M2˜3N type, and is formed over a whole area of the surface of the base material and continuously in a depth direction from the surface.
摘要翻译：通过对包括过渡金属或过渡金属的合金的基材的表面进行氮化处理而获得过渡金属氮化物，并且过渡金属氮化物具有M4N型晶体结构和ε型晶体结构， M2〜3N型，并且形成在基材的表面的整个区域上并且从表面沿深度方向连续地形成。

82. 发明授权

US07537745B2 Process for producing cyclohexanone oxime by mixing an acidic aqueous solution comprising hydroxylammonium and phosphate with nitric acid 失效
标题翻译：通过将含有羟基铵和磷酸盐的酸性水溶液与硝酸混合来制备环己酮肟的方法
公开(公告)号：US07537745B2
公开(公告)日：2009-05-26
申请号：US10538045
申请日：2003-12-10
申请人： Hendrik Oevering , Arno H Benneker
发明人： Hendrik Oevering , Arno H Benneker
IPC分类号： C01B21/06
CPC分类号： C07C249/08 , C01B21/1418
摘要： The invention relates to a process for mixing a first acidic aqueous solution comprising hydroxylammonium and phosphate with a second acidic aqueous solution comprising nitric acid at a temperature between 20 and 80° C. resulting in a third acidic aqueous solution comprising hydroxylammonium, phosphate and nitric acid, wherein in the third acidic aqueous solution the total acid concentration minus the phosphate concentration is lower than 0.523*In([hydroxylammonium]/1.25)+422/(T+81) whereby [hydroxylammonium] is the concentration of hydroxylammonium in the third acidic aqueous solution, T is the temperature of the third acidic aqueous solution expressed in ° C. and all concentrations are expressed in mol/l.
摘要翻译：本发明涉及一种将包含羟基铵和磷酸盐的第一酸性水溶液与包含硝酸的第二酸性水溶液在20至80℃之间进行混合的方法，得到包含羟基铵，磷酸盐和硝酸的第三酸性水溶液其中，在第三酸性水溶液中，总酸浓度减去磷酸盐浓度低于0.523 * In（[羟基铵] /1.25）+ 422 /（T + 81），由此[羟基铵]是第三酸性中羟基铵的浓度水溶液，T是以℃表示的第三酸性水溶液的温度，所有浓度以mol / l表示。

83. 发明申请

US20090004087A1 Thermal Expansion Inhibitor, Zero Thermal Expansion Material, Negative Thermal Expansion Material, Method for Inhibiting Thermal Expansion, and Method for Producing Thermal Expansion Inhibitor 有权
标题翻译：热膨胀抑制剂，零热膨胀材料，负热膨胀材料，用于抑制热膨胀的方法，以及生产热膨胀抑制剂的方法
公开(公告)号：US20090004087A1
公开(公告)日：2009-01-01
申请号：US11658740
申请日：2005-07-29
申请人： Koshi Takenaka , Hidenori Takagi
发明人： Koshi Takenaka , Hidenori Takagi
IPC分类号： C01B33/06 , C01B21/06 , C01B21/00
CPC分类号： G02B1/02 , G02B7/008 , H05K1/0373 , H05K2201/0209 , H05K2201/068
摘要： Provided is a thermal expansion inhibitor which has a much broader application range and which can be used with ease.Used is a thermal expansion inhibitor comprising a manganese nitride crystal.
摘要翻译：提供了具有更广泛应用范围并且可以容易地使用的热膨胀抑制剂。使用的是包含氮化锰晶体的热膨胀抑制剂。

84. 发明授权

US07438883B2 High-pressure phase silicon nitride having a cubic spinel structure and the manufacturing method 有权
标题翻译：具有立方尖晶石结构的高压相氮化硅及其制造方法
公开(公告)号：US07438883B2
公开(公告)日：2008-10-21
申请号：US10830852
申请日：2004-04-23
申请人： Kenji Ito , Katsuhiko Takahashi , Toshimori Sekine
发明人： Kenji Ito , Katsuhiko Takahashi , Toshimori Sekine
IPC分类号： C01B21/06 , C01B21/068 , C01B33/00
CPC分类号： C01B21/068 , C01B21/0687 , C01P2002/32 , C01P2002/72 , C01P2002/74 , C01P2002/76 , C01P2002/88 , C04B35/584 , C04B2235/3217 , C04B2235/3225 , C04B2235/3878 , C04B2235/3882 , C04B2235/5445 , C04B2235/762 , C04B2235/763
摘要： A method for preparing a high-pressure phase cubic spinel-type silicon nitride includes housing a molding containing low-pressure phase silicon nitride powder and a metal powder in a cylindrical container, arranging an explosive in the cylindrical container so as to surround the molding, and exploding the explosive to compress the molding. An X-ray diffraction pattern of the high-pressure phase cubic spinel-type silicon nitride produced according to the method of the present invention shows a maximum peak having a full width at half maximum of 0.65 degrees or less. TG-DTA analysis of the cubic spinel-type silicon nitride shows a weight change starting temperature of 700 to 1100° C.
摘要翻译：制备高压相立方尖晶石型氮化硅的方法包括在筒状容器中容纳含有低压相氮化硅粉末和金属粉末的成型体，将圆筒状容器内的炸药排列成包围成形品，并爆炸炸药压缩成型。根据本发明的方法生产的高压相立方尖晶石型氮化硅的X射线衍射图示出了半峰全宽为0.65度以下的最大峰。立方尖晶石型氮化硅的TG-DTA分析表明重量变化起始温度为700〜1100℃。

85. 发明授权

US07422631B2 Mould parts of silicon nitride and method for producing such mould parts 失效
标题翻译：氮化硅的模具部件及其制造方法
公开(公告)号：US07422631B2
公开(公告)日：2008-09-09
申请号：US10520834
申请日：2003-08-13
申请人： Espen Olsen , Arve Solheim , Havard Sorheim
发明人： Espen Olsen , Arve Solheim , Havard Sorheim
IPC分类号： C01B21/06 , C01B21/068 , C30B15/00 , C30B27/02 , C30B28/10 , B22F1/00 , B22F3/093 , B22F3/10
CPC分类号： C30B29/06 , C04B35/591 , C04B38/0058 , C04B2111/00939 , C04B2235/428 , C04B2235/46 , C04B2235/77 , C30B11/002 , C30B15/10 , Y10S117/90 , Y10T117/1052
摘要： The present invention relates to silicon nitride mould parts, particularly crucibles for use in connection with directional solidification and pulling of silicon single crystals. The mould parts consist of Si3N4 having a total open porosity between 40 and 60% by volume and where more than 50% of the pores in the surface of the mould parts have a size which is larger than the means size of the Si3N4 particles. The invention further relates to a method for producing the silicon nitride mould parts.
摘要翻译：本发明涉及氮化硅模具部件，特别是与定向凝固和拉伸硅单晶有关的坩埚。模具部件由具有40至60体积％的总开孔率的Si 3 N 4 S 4组成，并且其中模具表面中的多于50％的孔部件的尺寸大于Si 3 N 4 N 4颗粒的平均尺寸。本发明还涉及一种用于制造氮化硅模具部件的方法。

86. 发明申请

US20080213158A1 Apparatus for production of crystal of group III element nitride and process for producing crystal of group III element nitride 有权
标题翻译：用于生产III族元素氮化物晶体的装置和用于生产III族元素氮化物晶体的方法
公开(公告)号：US20080213158A1
公开(公告)日：2008-09-04
申请号：US12082745
申请日：2008-04-14
申请人： Hisashi Minemoto , Yasuo Kitaoka , Isao Kidoguchi , Yusuke Mori , Fumio Kawamura , Takatomo Sasaki , Hidekazu Umeda , Yasuhito Takahashi
发明人： Hisashi Minemoto , Yasuo Kitaoka , Isao Kidoguchi , Yusuke Mori , Fumio Kawamura , Takatomo Sasaki , Hidekazu Umeda , Yasuhito Takahashi
IPC分类号： C30B23/00 , C01B21/06
CPC分类号： C30B29/403 , C30B9/10 , C30B29/406 , C30B35/00 , Y10T117/1064 , Y10T117/1096
摘要： A manufacturing apparatus of Group III nitride crystals and a method for manufacturing Group III nitride crystals are provided, by which high quality crystals can be manufactured. For instance, crystals are grown using the apparatus of the present invention as follows. A crystal raw material (131) and gas containing nitrogen are introduced into a reactor vessel (120), to which heat is applied by a heater (110), and crystals are grown in an atmosphere of pressure applied thereto. The gas is introduced from a gas supplying device (180) to the reactor vessel (120) through a gas inlet of the reactor vessel, and then is exhausted to the inside of a pressure-resistant vessel (102) through a gas outlet of the reactor vessel. Since the gas is introduced directly to the reactor vessel (120) without passing through the pressure-resistant vessel (102), the mixture of impurities attached to the pressure-resistant vessel (102) and the like into the site of the crystal growth can be prevented. Further, since the gas flows through the reactor vessel (120), there is no aggregation of an evaporating alkali metal, etc., at the gas inlet or the like, and such an alkali metal does not flow into the gas supplying device (180). As a result, the quality of Group III nitride crystals obtained can be improved.
摘要翻译：提供III族氮化物晶体的制造装置和制造III族氮化物晶体的方法，由此可以制造高质量的晶体。例如，使用本发明的装置如下生长晶体。将晶体原料（131）和含氮气体引入反应器容器（120）中，通过加热器（110）向其施加热量，并在施加压力的气氛中生长晶体。气体通过反应器容器的气体入口从气体供给装置（180）引入反应器容器（120），然后通过反应器的气体出口被排出到耐压容器（102）的内部反应堆容器。由于气体不通过耐压容器（102）直接引入反应器容器（120），附着在耐压容器（102）等上的杂质混合物进入晶体生长位置可以被阻止此外，由于气体流过反应器容器（120），所以在气体入口等处没有蒸发的碱金属等的聚集，并且这种碱金属不会流入气体供给装置（180 ）。结果，可以提高获得的III族氮化物晶体的质量。

87. 发明授权

US07413721B2 Method for forming ammonia 失效
标题翻译：形成氨的方法
公开(公告)号：US07413721B2
公开(公告)日：2008-08-19
申请号：US11191770
申请日：2005-07-28
申请人： Peter C. Kong , Robert J. Pink , Larry D. Zuck
发明人： Peter C. Kong , Robert J. Pink , Larry D. Zuck
IPC分类号： C01C1/02 , C01B21/06 , C01B3/04
CPC分类号： C01C1/02 , C01B3/047 , C01B13/322 , C01B21/06 , Y02E60/364
摘要： A method for forming ammonia is disclosed and which includes the steps of forming a plasma; providing a source of metal particles, and supplying the metal particles to the plasma to form metal nitride particles; and providing a substance, and reacting the metal nitride particles with the substance to produce ammonia, and an oxide byproduct.
摘要翻译：公开了一种形成氨的方法，其包括形成等离子体的步骤; 提供金属颗粒源，并将金属颗粒供给到等离子体中以形成金属氮化物颗粒; 提供物质，使金属氮化物粒子与物质反应生成氨，以及氧化物副产物。

88. 发明申请

US20080081015A1 Crystal producing apparatus, crystal producing method, substrate producing method, gallium nitride crystal, and gallium nitride substrate 有权
标题翻译：晶体制造装置，晶体制造方法，衬底制造方法，氮化镓晶体和氮化镓衬底
公开(公告)号：US20080081015A1
公开(公告)日：2008-04-03
申请号：US11906285
申请日：2007-10-01
申请人： Seiji Sarayama , Hirokazu Iwata
发明人： Seiji Sarayama , Hirokazu Iwata
IPC分类号： C01B21/06 , C30B25/02 , H01L21/20
CPC分类号： C30B9/00 , C30B9/12 , C30B17/00 , C30B23/025 , C30B25/18 , C30B25/20 , C30B29/403 , H01L21/20 , H01L29/2003 , Y10T117/10
摘要： A crystal producing apparatus includes a crystal forming unit and a crystal growing unit. The crystal forming unit forms a first gallium nitride (GaN) crystal by supplying nitride gas into melt mixture containing metal sodium (Na) and metal gallium (Ga). The first GaN crystal is sliced and polished to form GaN wafers. The crystal growing unit grows a second GaN crystal on a substrate formed by using a GaN wafer, by the hydride vapor phase epitaxy method, thus producing a bulked GaN crystal.
摘要翻译：晶体制造装置包括晶体形成单元和晶体生长单元。晶体形成单元通过向含有金属钠（Na）和金属镓（Ga）的熔融混合物供给氮化物而形成第一氮化镓（GaN）晶体。将第一GaN晶体切片并抛光以形成GaN晶片。晶体生长单元通过氢化物气相外延法在通过使用GaN晶片形成的衬底上生长第二GaN晶体，从而产生膨胀的GaN晶体。

89. 发明申请

US20070297965A1 PROCESS FOR PURIFYING PERFLUORINATED PRODUCTS 失效
标题翻译：净化全氟化合物的工艺
公开(公告)号：US20070297965A1
公开(公告)日：2007-12-27
申请号：US11755367
申请日：2007-05-30
申请人： Mark Shiflett , Akimichi Yokozeki
发明人： Mark Shiflett , Akimichi Yokozeki
IPC分类号： C01B21/00 , C01B21/06 , C01B21/084 , C01B21/093 , C01B25/10 , C01B35/06
CPC分类号： C07C17/38 , C01B21/0837 , C07C17/386 , C07C19/08
摘要： This invention relates to a process for purifying at least one of perfluoromethane and nitrogen trifluoride from a mixture thereof using an ionic liquid. The process may be performed by a technique such as extractive distillation or absorption wherein at least one ionic liquid is used as the entraining agent or absorbent, respectively.
摘要翻译：本发明涉及使用离子液体从其混合物中纯化至少一种全氟甲烷和三氟化氮的方法。该方法可以通过诸如萃取蒸馏或吸收的技术进行，其中至少一种离子液体分别用作夹带剂或吸收剂。

90. 发明申请

US20070196260A1 Process for producing transition metal ion crosslinked electrode material 审中-公开
标题翻译：制备过渡金属离子交联电极材料的方法
公开(公告)号：US20070196260A1
公开(公告)日：2007-08-23
申请号：US11632388
申请日：2005-07-08
申请人： Shinichi Kikkawa , Hiroki Tamura , Takashi Takeda
发明人： Shinichi Kikkawa , Hiroki Tamura , Takashi Takeda
IPC分类号： C01B21/06
CPC分类号： H01M4/1391 , C01G45/1221 , H01M4/139 , H01M4/485 , H01M4/505 , H01M2004/028
摘要： The present invention relate to a method for producing a transition metal ion bridging positive electrode material, wherein a mono-valent transition metal complex ion is intercalated into an interlayer space of layered transition metal oxide containing therein an alkali metal complex ion. The method of the present invention provides safe and simple operation without using acid and organic compound required in the prior art. The method of the present invention also provides an advantageous method in terms of cost performance by employing the procedure for producing a positive electrode via the layered transition metal oxide containing alkali metal complex ion within the layers, preferably via the layered manganese oxide buserite.
摘要翻译：本发明涉及一种过渡金属离子桥联正极材料的制造方法，其中一价过渡金属配合物离子插入含有碱金属配合物离子的层状过渡金属氧化物的层间空间中。本发明的方法提供安全和简单的操作，而不使用现有技术中所需的酸和有机化合物。本发明的方法还通过采用通过层内的碱金属配合物离子的层状过渡金属氧化物制备正极的方法，优选通过层状锰氧化物白铁矿，提供了成本性能方面的有利方法。

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