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    • 5. 发明授权
    • Memory device utilizing giant magnetoresistance effect
    • 采用巨磁阻效应的存储器件
    • US6055179A
    • 2000-04-25
    • US312845
    • 1999-05-17
    • Akio KoganeiNaoki Nishimura
    • Akio KoganeiNaoki Nishimura
    • G11C11/15G11C11/00G11C11/14
    • G11C11/15
    • A memory device using giant magnetoresistance (GMR) effect, and an inexpensive memory device that has low power consumption, excels in memory performance, and is suitable for use in computer peripherals.The memory device utilizes giant magnetoresistance effect and includes a substrate with an insulating surface; a monocrystalline semiconductor layer formed on the insulating surface of the substrate, a switching element formed at least on part of the monocrystalline semiconductor layer, a magnetoresistive film formed on the insulating surface of the substrate, the magnetoresistive film comprising a first magnetic layer and a second magnetic layer which has a higher coercive force than the first magnetic layer and which is stacked on the first magnetic layer with a non-magnetic layer interposed between them, and a word line installed near the magnetoresistive film with an insulating layer interposed between them, and the switching element is connected electrically to either the magnetoresistive film or word line.
    • 使用巨磁阻(GMR)效应的存储器件以及具有低功耗的便宜的存储器件,具有优异的存储器性能,并且适用于计算机外围设备。 存储器件利用巨磁电阻效应并且包括具有绝缘表面的衬底; 形成在所述基板的绝缘表面上的单晶半导体层,形成在所述单晶半导体层的至少一部分上的开关元件,形成在所述基板的绝缘表面上的磁阻膜,所述磁阻膜包括第一磁性层和第二磁性层 磁性层具有比第一磁性层更高的矫顽力,并且在它们之间插入非磁性层而堆叠在第一磁性层上,以及安装在磁阻膜附近的字线,绝缘层位于它们之间,以及 开关元件电连接到磁阻膜或字线。
    • 8. 发明授权
    • Tapered angle magnetoresistive element and nonvolatile solid-state memory using the same
    • 锥形磁阻元件和使用其的非易失性固态存储器
    • US06987652B2
    • 2006-01-17
    • US10260065
    • 2002-10-01
    • Akio Koganei
    • Akio Koganei
    • G11B5/39G11C11/15
    • G11C11/15
    • The present invention provides a magnetoresistive element in which a first magnetic layer and a second magnetic layer whose coercive forces are different, and a non-magnetic layer that is disposed between the magnetic layers, wherein edges of the magnetoresistive element are tapered, or a magnetoresistive element in which a first magnetic layer and a second magnetic layer, and a non-magnetic layer that is disposed between the magnetic layers, wherein the coercive force of the first magnetic layer is larger than the coercive force of the second magnetic layer, and wherein relation between a base area S1 of the first magnetic layer and a base area S2 of the second magnetic layer is S1>S2.
    • 本发明提供一种磁阻元件,其中矫顽力不同的第一磁性层和第二磁性层,以及设置在磁性层之间的非磁性层,磁阻元件的边缘是锥形的,或是磁阻 元件,其中第一磁性层和第二磁性层以及设置在磁性层之间的非磁性层,其中第一磁性层的矫顽力大于第二磁性层的矫顽力,其中 第一磁性层的基极面积S1与第二磁性层的基极面积S 2之间的关系为S 1> S 2。