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    • 1. 发明申请
    • MAGNET ARRANGEMENT FOR A TARGET BACKING TUBE AND TARGET BACKING TUBE COMPRISING THE SAME
    • 用于目标支管的磁铁装置和包含其的目标支管
    • US20110079511A1
    • 2011-04-07
    • US12641080
    • 2009-12-17
    • Anke HELLMICHWolfgang KROCK
    • Anke HELLMICHWolfgang KROCK
    • C23C14/34
    • H01J37/3405H01J37/342H01J37/3452
    • The disclosure concerns a magnet arrangement for a target backing tube for a rotatable target of a sputtering system, the magnet arrangement having a longitudinal axis and a circumferential direction around the longitudinal axis, and being adapted for an arrangement in a cylindrical backing tube, wherein the magnet arrangement comprises in a circumferential sequence: a first magnet element extending in parallel to the longitudinal axis, a second magnet element extending in parallel to the longitudinal axis, and a third magnet element extending in parallel to the longitudinal axis, wherein each magnet element has a center axis extending in a radial direction, wherein the angular distance between the first and the third magnet elements, with respect to their center axis, is less than about 85 degrees. The disclosure also concerns a cylindrical target assembly and at least one target cylinder disposed around the target backing tube.
    • 本公开涉及用于用于溅射系统的可旋转靶的目标背衬管的磁体布置,磁体布置具有围绕纵向轴线的纵向轴线和周向方向,并且适于在圆柱形背衬管中布置,其中, 磁体排列包括圆周顺序:平行于纵向轴线延伸的第一磁体元件,平行于纵向轴线延伸的第二磁体元件和平行于纵向轴线延伸的第三磁体元件,其中每个磁体元件具有 沿径向方向延伸的中心轴线,其中第一和第三磁体元件之间相对于其中心轴线的角距离小于约85度。 本公开还涉及圆柱形目标组件和围绕目标背衬管设置的至少一个目标圆柱体。
    • 4. 发明申请
    • SPUTTERING SYSTEM, ROTATABLE CYLINDRICAL TARGET ASSEMBLY, BACKING TUBE, TARGET ELEMENT AND COOLING SHIELD
    • 喷射系统,可旋转圆柱形目标组件,背管,目标元件和冷却屏蔽
    • US20110005923A1
    • 2011-01-13
    • US12505379
    • 2009-07-17
    • Frank SCHNAPPENBERGERRoland WEBERJoerg KREMPEL-HESSEAnke HELLMICH
    • Frank SCHNAPPENBERGERRoland WEBERJoerg KREMPEL-HESSEAnke HELLMICH
    • C23C14/34
    • H01J37/342H01J37/3405H01J37/3435H01J37/3497
    • The application concerns a target backing tube for a rotatable cylindrical target assembly comprising: a tube for at least one target element to be disposed there around, wherein the tube has an exterior surface adapted to face the at least one target element, wherein a portion of the exterior surface of the tube has a mean emissivity of 0.7 to 1, wherein the portion is at least 50% of the exterior surface of the tube. Further, the application concerns a cooling shield for a sputtering system comprising a rotatable target, the cooling shield has an interior surface adapted to face a target element of a sputtering system and an exterior surface; wherein a portion of the interior surface of the cooling shield has a mean emissivity of 0.7 to 1, wherein the portion is at least 50% of the interior surface of the cooling shield. Additionally, the application concerns a target element for a rotatable cylindrical target assembly of a sputtering system, wherein the target element an interior surface adapted to face a target backing tube onto which the target cylinder is adapted to be disposed and exterior surface, wherein a portion of the interior surface of the target element has a mean emissivity of 0.7 to 1, wherein the portion is at least 50% of the interior surface of the target element.
    • 该应用涉及用于可旋转的圆柱形目标组件的目标背衬管,其包括:用于至少一个目标元件的管,其被布置在其周围,其中管具有适于面向至少一个目标元件的外表面,其中一部分 管的外表面具有0.7至1的平均发射率,其中该部分至少为管外表面的50%。 此外,该应用涉及包括可旋转靶的溅射系统的冷却屏蔽,冷却屏具有适于面对溅射系统的目标元件和外表面的内表面; 其中所述冷却罩的内表面的一部分的平均发射率为0.7比1,其中所述部分是所述冷却屏蔽的内表面的至少50%。 另外,该应用涉及一种用于溅射系统的可旋转圆柱形目标组件的目标元件,其中目标元件适于面向目标背衬管的内表面,目标圆柱体适于布置在其上并且外表面,其中一部分 目标元件的内表面的平均发射率为0.7比1,其中该部分是目标元件的内表面的至少50%。
    • 9. 发明申请
    • METHOD FOR PRODUCING AN ITO LAYER AND SPUTTERING SYSTEM
    • 生产ITO层和溅射系统的方法
    • US20110192716A1
    • 2011-08-11
    • US12707546
    • 2010-02-17
    • Anke HELLMICHFrank SCHNAPPENBERGERJoerg KREMPEL-HESSE
    • Anke HELLMICHFrank SCHNAPPENBERGERJoerg KREMPEL-HESSE
    • C23C14/34
    • C23C14/086C23C14/3407C23C14/3421C23C14/35H01J37/3405H01J37/342
    • The present disclosure relates to a method for producing an indium-tin-oxide layer, comprising: providing a substrate to be coated in a sputtering chamber; providing a rotatable non-bonded target around a backing tube for coating the substrate in the sputtering chamber; and sputtering the material from the target in an atmosphere containing an O2/H2 mixture. Further the present disclosure relates to a sputtering system comprising a sputtering chamber having at least one gas inlet and being adapted for at least one backing tube for a non-bonded rotatable target, a control device adapted to control the flow through the gas inlet, wherein the control device is adapted to control the at least one gas inlet such that a coating on a substrate using a sputtering process is performed in an atmosphere containing an O2 /H2 mixture in the sputtering chamber for forming an indium-tin-oxide layer.
    • 本公开内容涉及一种制造铟锡氧化物层的方法,包括:在溅射室中提供待涂覆的基板; 在背衬管周围提供可旋转的未粘合的靶,用于在溅射室中涂覆基底; 并在包含O 2 / H 2混合物的气氛中从靶上溅射材料。 此外,本公开涉及一种溅射系统,其包括具有至少一个气体入口并且适用于至少一个用于非粘合的可旋转靶的背衬管的溅射室,适于控制通过气体入口的流动的控制装置,其中 控制装置适于控制至少一个气体入口,使得使用溅射工艺的衬底上的涂层在用于形成铟锡氧化物层的溅射室中的含有O 2 / H 2混合物的气氛中进行。