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1. 发明申请

US20170167011A1 EVAPORATION APPARATUS AND EVAPORATION METHOD 审中-公开
公开(公告)号：US20170167011A1
公开(公告)日：2017-06-15
申请号：US15054740
申请日：2016-02-26
申请人： AU Optronics Corporation
发明人： Chih-Hung HSIAO
IPC分类号： C23C14/24
CPC分类号： C23C14/24 , C23C14/544
摘要： An evaporation apparatus includes a holder, a source, a first sensor, a calculating unit, and an actuator. The holder is configured to hold a substrate. The source is configured to evaporate an evaporation material to be deposited on the substrate. The first sensor is configured to detect evaporation rates of the evaporation material at plural detection positions. The calculating unit is configured to estimate an evaporation angle based on the detected evaporation rates of the evaporation material at the detection positions. The actuator is configured to move the source based on the estimated evaporation angle.

2. 发明申请

US20160244870A1 METHOD FOR CONTROLLING A GAS SUPPLY AND CONTROLLER 审中-公开
标题翻译：用于控制气体供应和控制器的方法
公开(公告)号：US20160244870A1
公开(公告)日：2016-08-25
申请号：US15024001
申请日：2013-09-24
申请人： Frank SCHNAPPENBERGER , Anke HELLMICH , Thomas KOCH , Thomas DEPPISCH
发明人： Frank SCHNAPPENBERGER , Anke HELLMICH , Thomas KOCH , Thomas DEPPISCH
IPC分类号： C23C14/00 , C23C14/54
CPC分类号： C23C14/0042 , C23C14/544 , H01J37/32449 , H01J37/32981 , H01J37/3299
摘要： A method for controlling a gas supply to a process chamber is provided. The method includes: measuring a gas parameter by each of two or more sensors provided in the process chamber; determining a combined gas parameter from the measured gas parameters; and controlling the gas supply to the process chamber based on the determined combined gas parameter.
摘要翻译：提供了一种用于控制对处理室的气体供应的方法。该方法包括：通过设置在处理室中的两个或更多个传感器中的每一个测量气体参数; 根据测量的气体参数确定组合气体参数; 以及基于所确定的组合气体参数来控制对所述处理室的气体供应。

3. 发明申请

US20160168702A1 SYSTEMS AND METHODS FOR PROCESSING VAPOR 审中-公开
标题翻译：用于处理蒸汽的系统和方法
公开(公告)号：US20160168702A1
公开(公告)日：2016-06-16
申请号：US15051761
申请日：2016-02-24
申请人： 3M INNOVATIVE PROPERTIES COMPANY
发明人： Christopher S. Lyons , Kent T. Engle , Steven R. Vanhoose , Terence D. Spawn , Joseph M. Pieper , Edward J. Anderson , Walter Stoss
IPC分类号： C23C16/455 , B05D1/00 , B01D3/10 , C23C16/50
CPC分类号： C23C16/45561 , B01D3/10 , B05D1/60 , B05D2252/02 , C23C14/12 , C23C14/228 , C23C14/24 , C23C14/544 , C23C14/562 , C23C14/58 , C23C14/5806 , C23C14/582 , C23C16/50
摘要： A system for processing vapor. The system includes a vapor source for producing a vapor and an outlet conduit coupled to the vapor source for carrying the vapor from the vapor source. Downstream of the vapor source the outlet conduit separates into a vapor bypass conduit and a vapor feed conduit. The system further includes a first vapor control valve disposed in the bypass conduit, a second vapor control valve disposed in the feed conduit, a first vacuum chamber connected to the bypass conduit, and a second vacuum chamber connected to the feed conduit.
摘要翻译：蒸汽处理系统该系统包括用于产生蒸汽的蒸汽源和与蒸汽源耦合的出口导管，用于承载来自蒸气源的蒸气。在蒸汽源的下游，出口导管分离成蒸气旁路管道和蒸气供给导管。该系统还包括设置在旁路管道中的第一蒸汽控制阀，设置在进料管道中的第二蒸汽控制阀，连接到旁路管道的第一真空室和连接到进料管道的第二真空室。

4. 发明授权

US09279177B2 Thin film deposition apparatus, method of manufacturing organic light-emitting display device by using the apparatus, and organic light-emitting display device manufactured by using the method 有权
标题翻译：薄膜沉积装置，使用该装置的有机发光显示装置的制造方法以及使用该方法制造的有机发光显示装置
公开(公告)号：US09279177B2
公开(公告)日：2016-03-08
申请号：US13157220
申请日：2011-06-09
申请人： Yong-Sup Choi , Myeng-Woo Nam
发明人： Yong-Sup Choi , Myeng-Woo Nam
IPC分类号： H01L33/00 , B05C11/10 , C23C14/04 , C23C14/24 , C23C14/50 , C23C14/54 , C23C14/56
CPC分类号： C23C14/044 , C23C14/24 , C23C14/50 , C23C14/544 , C23C14/56
摘要： A thin film deposition apparatus includes: a deposition source for discharging a deposition material; a deposition source nozzle unit disposed at a side of the deposition source and including a plurality of deposition source nozzles arranged in a first direction; a patterning slit sheet disposed opposite to the deposition source nozzle unit and having a plurality of patterning slits arranged in the first direction; a barrier plate assembly including a plurality of barrier plates that are disposed between the deposition source nozzle unit and the patterning slit sheet in the first direction, the plurality of barrier plates partitioning a deposition space between the deposition source nozzle unit and the patterning slit sheet into a plurality of sub-deposition spaces; and a capacitive vacuum gauge disposed at a side of the deposition source and configured to measure a pressure inside the deposition source.
摘要翻译：薄膜沉积设备包括：用于排出沉积材料的沉积源; 沉积源喷嘴单元，设置在沉积源的一侧，并且包括沿第一方向布置的多个沉积源喷嘴; 与沉积源喷嘴单元相对设置并且具有沿着第一方向布置的多个图案化狭缝的图案化缝隙片; 隔离板组件，其包括沿着第一方向设置在所述沉积源喷嘴单元和所述图案化缝隙片之间的多个阻挡板，所述多个阻挡板将所述沉积源喷嘴单元和所述图案化缝隙片之间的沉积空间分隔成为多个次沉积空间; 以及电容式真空计，其设置在所述沉积源的一侧并且被配置为测量所述沉积源内的压力。

5. 发明申请

US20140161966A1 MONOMER VAPORIZING DEVICE AND METHOD OF CONTROLLING THE SAME 审中-公开
标题翻译：单体蒸发装置及其控制方法
公开(公告)号：US20140161966A1
公开(公告)日：2014-06-12
申请号：US14010769
申请日：2013-08-27
申请人： SAMSUNG DISPLAY CO., LTD.
发明人： Yong-Suk Lee , Myung-Soo Huh , Suk-Won Jung , Jeong-Ho Yi , Mi-Ra An
IPC分类号： C23C16/52
CPC分类号： C23C14/543 , B05D1/60 , C23C14/12 , C23C14/246 , C23C14/544 , C23C16/4481
摘要： A monomer vaporizing device and a method of controlling the same are disclosed. The monomer vaporizing device includes: a first vaporizer and a second vaporizer that receive a purge gas and vaporize a first monomer and a second monomer, respectively; a first flow pipe and a second flow pipe that are connected to the respective vaporizers and allow the first monomer and the second monomer, vaporized by the respective vaporizers, to flow therethrough; a transition tube that is connected to the first flow pipe and the second flow pipe and supplies at least one of the first monomer and the second monomer to a deposition chamber; and a control valve apparatus that regulates monomer flow into the deposition chamber. The device facilitates smooth and uninterrupted application of monomer to the interior of a deposition chamber.
摘要翻译：公开了一种单体蒸发装置及其控制方法。单体蒸发装置包括：第一蒸发器和第二蒸发器，其分别接收吹扫气体并蒸发第一单体和第二单体; 第一流管和第二流管，其连接到相应的蒸发器并允许由各蒸发器蒸发的第一单体和第二单体流过其中; 过渡管，其连接到所述第一流管和所述第二流管，并且将至少一个所述第一单体和所述第二单体供应到沉积室; 以及调节单体流入沉积室的控制阀装置。该装置有助于将单体平滑且不间断地应用于沉积室的内部。

6. 发明授权

US08025734B2 Method for controlling the volume of a molecular beam 有权
标题翻译：用于控制分子束体积的方法
公开(公告)号：US08025734B2
公开(公告)日：2011-09-27
申请号：US12658024
申请日：2010-02-01
申请人： Osamu Kobayashi , Toshihiko Ishida
发明人： Osamu Kobayashi , Toshihiko Ishida
IPC分类号： C23C16/00
CPC分类号： C23C14/243 , C23C14/544 , C30B23/066
摘要： A molecular beam source for use in thin-film accumulation, which enables the adjustment of the volume of a molecular beam, which is discharged per hour by using a needle valve, to be constant irrespective of a decrease in a thin-film element-forming material remaining within a crucible, contains heaters 32 and 42 for heating the thin-film element-forming materials “a” and “b” within crucibles 31 and 41, and valves 33 and 43 for adjusting the volumes to be discharged of molecules of the thin-film element forming materials “a” and “b”, which are generated within the crucibles 31 and 41. It further contains a controller for adjusting the opening of the valves 33 and 43 by servomotors 36 and 46 through feeding back information relating to the volumes of the molecular beams.
摘要翻译：用于薄膜累积的分子束源，其能够通过使用针阀来调节每小时排出的分子束的体积，而不管薄膜元件形成的减少如何残留在坩埚内的材料包含用于加热坩埚31和41内的薄膜元件形成材料“a”和“b”的加热器32和42，以及用于调节排出的体积的阀33和43 在坩埚31和41内产生的薄膜元件形成材料“a”和“b”。它还包括一个控制器，用于通过反馈信息来调节由伺服电动机36和46开启的阀33和43的信息分子束的体积。

7. 发明申请

US20100247807A1 ELECTRON GUN EVAPORATION APPARATUS AND FILM FORMATION METHOD USING THE ELECTRON GUN EVAPORATION APPARATUS 有权
标题翻译：电子喷雾装置的电子喷雾装置和膜形成方法
公开(公告)号：US20100247807A1
公开(公告)日：2010-09-30
申请号：US12438452
申请日：2008-01-29
申请人： Masato Nakayama
发明人： Masato Nakayama
IPC分类号： C23C14/28 , C23C14/00
CPC分类号： C23C14/30 , C23C14/544 , H01J37/304 , H01J37/3053 , H01J2237/30466 , H01J2237/30483 , H01J2237/3132
摘要： An electron gun evaporation apparatus capable of efficiently using an evaporation source includes an electron beam position controller which determines, as an applicable range, a range within which the distribution of the film thickness growth rate is almost constant in each scanning direction of an electron beam to be applied to an evaporation source in a crucible for the irradiation position of the electron beam, on the basis of information pertaining to the electron beam irradiation position and the film thickness growth rate in the electron beam irradiation position.
摘要翻译：能够有效地使用蒸发源的电子枪蒸发装置包括电子束位置控制器，该电子束位置控制器将电子束的每个扫描方向上的膜厚增长率的分布几乎恒定的范围确定为适用范围，基于与电子束照射位置和电子束照射位置的膜厚度生长速度有关的信息，施加到用于电子束的照射位置的坩埚中的蒸发源。

8. 发明授权

US07719681B2 Apparatus and method for measuring vapor flux density 有权
标题翻译：用于测量蒸气通量密度的装置和方法
公开(公告)号：US07719681B2
公开(公告)日：2010-05-18
申请号：US11871708
申请日：2007-10-12
申请人： Chih-shun Lu
发明人： Chih-shun Lu
IPC分类号： G01J3/28
CPC分类号： C23C14/544 , G01J3/443
摘要： A two-chamber electron impact emission sensor effective for monitoring vapor flux of materials in the presence of interfering species is described. The sensor includes two independent electron excitation regions and one photodetector for monitoring emission from excited species from both chambers. Copper vapor flux from an evaporation source was accurately measured in the presence of interfering H2O vapor, and Ga vapor flux from an evaporation source was accurately monitored in the presence of interfering CO2 gas. The invention permits deposition rates to be monitored using electron-impact emission spectroscopy with significantly improved accuracy in the presence of interfering gases at high partial pressures.
摘要翻译：描述了在干扰物质存在下有效监测材料的蒸气通量的双室电子撞击发射传感器。传感器包括两个独立的电子激发区域和一个光电检测器，用于监测来自两个腔室的激发物质的发射。在干扰的H 2 O蒸气的存在下，来自蒸发源的铜蒸汽通量被精确地测量，并且在干扰的CO 2气体的存在下，来自蒸发源的Ga蒸气通量被精确地监测。本发明允许使用电子轰击发射光谱监测沉积速率，并且在高分压下在干扰气体存在下具有显着提高的精度。

9. 发明授权

US07436526B2 Real-time system for monitoring and controlling film uniformity and method of applying the same 有权
标题翻译：用于监控和控制膜均匀性的实时系统及其应用方法
公开(公告)号：US07436526B2
公开(公告)日：2008-10-14
申请号：US11669165
申请日：2007-01-31
申请人： Wen-Li Tsai , Yu-Min Tsai , Hsiao-Che Wu
发明人： Wen-Li Tsai , Yu-Min Tsai , Hsiao-Che Wu
IPC分类号： B29C65/00 , B29C65/02 , B32B37/00 , B32B38/00 , C23C16/52 , C23C14/54 , G01B11/14 , G01B11/28
CPC分类号： C23C14/544 , G01B11/0625 , G01B11/0675 , G01B11/0683 , H01L22/12 , H01L22/20
摘要： A real-time system adapted to a PVD apparatus for monitoring and controlling film uniformity is described. The system includes a shielding plate, a monitoring device, and a data processing program. The shielding plate is disposed on an inner wall of a reaction chamber above a wafer stage. An opening in the center of the shielding plate exposes the wafer. The monitoring device including a scanner and a sensor respectively disposed on opposite sidewalls of the reaction chamber between the shielding plate and the wafer stage is used for measuring the flux of the particles on every portion of the wafer to acquire real-time uniformity data including a function of the wafer position and the flux. The data processing program compares the real-time uniformity data and reference uniformity data, and a feedback signal is outputted to the PVD apparatus to adjust the process parameter thereof for controlling film uniformity.
摘要翻译：描述了适用于监测和控制膜均匀性的PVD设备的实时系统。该系统包括屏蔽板，监视装置和数据处理程序。屏蔽板设置在晶片台上方的反应室的内壁上。屏蔽板中心的开口露出晶片。包括扫描仪和分别设置在屏蔽板和晶片台之间的反应室的相对侧壁上的传感器的监视装置用于测量晶片每一部分上的颗粒的通量，以获得实时均匀性数据，包括晶圆位置和通量的功能。数据处理程序比较实时均匀性数据和参考均匀性数据，并且将反馈信号输出到PVD装置以调整其处理参数以控制膜均匀性。

10. 发明申请

US20080118631A1 REAL-TIME SYSTEM FOR MONITORING AND CONTROLLING FILM UNIFORMITY AND METHOD OF APPLYING THE SAME 有权
标题翻译：用于监控和控制胶片均匀性的实时系统及其应用方法
公开(公告)号：US20080118631A1
公开(公告)日：2008-05-22
申请号：US11669165
申请日：2007-01-31
申请人： Wen-Li Tsai , Yu-Min Tsai , Hsiao-Che Wu
发明人： Wen-Li Tsai , Yu-Min Tsai , Hsiao-Che Wu
IPC分类号： B05C11/00 , C23C14/54
CPC分类号： C23C14/544 , G01B11/0625 , G01B11/0675 , G01B11/0683 , H01L22/12 , H01L22/20
摘要： A real-time system adapted to a PVD apparatus for monitoring and controlling film uniformity is described. The system includes a shielding plate, a monitoring device, and a data processing program. The shielding plate is disposed on an inner wall of a reaction chamber above a wafer stage. An opening in the center of the shielding plate exposes the wafer. The monitoring device including a scanner and a sensor respectively disposed on opposite sidewalls of the reaction chamber between the shielding plate and the wafer stage is used for measuring the flux of the particles on every portion of the wafer to acquire real-time uniformity data including a function of the wafer position and the flux. The data processing program compares the real-time uniformity data and reference uniformity data, and a feedback signal is outputted to the PVD apparatus to adjust the process parameter thereof for controlling film uniformity.
摘要翻译：描述了适用于监测和控制膜均匀性的PVD设备的实时系统。该系统包括屏蔽板，监视装置和数据处理程序。屏蔽板设置在晶片台上方的反应室的内壁上。屏蔽板中心的开口露出晶片。包括扫描仪和分别设置在屏蔽板和晶片台之间的反应室的相对侧壁上的传感器的监视装置用于测量晶片每一部分上的颗粒的通量，以获得实时均匀性数据，包括晶圆位置和通量的功能。数据处理程序比较实时均匀性数据和参考均匀性数据，并且将反馈信号输出到PVD装置以调整其处理参数以控制膜均匀性。

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