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    • 3. 发明授权
    • Magnetic memory device
    • 磁存储器件
    • US07839676B2
    • 2010-11-23
    • US12407156
    • 2009-03-19
    • Daisuke KuroseMasanori FurutaTsutomu Sugawara
    • Daisuke KuroseMasanori FurutaTsutomu Sugawara
    • G11C11/14
    • G11C11/1693G11C11/1673G11C11/1675
    • A magnetic memory device includes a plurality of word lines, a plurality of bit lines arranged to intersect with the word lines, an MRAM cell array including a plurality of magnetic random access memory (MRAM) cells arranged at intersection portions between the word lines and the bit lines, a read current source which supplies a read current to the MRAM cells in a read mode, a sense amplifier which detects terminal voltages of the MRAM cells generated by the read current to generate a detection output signal, a latch circuit which latches the detection output signal to output read data, and a data write circuit which supplies a write current to the MRAM cells depending on write data in a write mode to perform writing and which supplies the write current to the MRAM cells depending on the read data in the read mode to perform rewriting.
    • 一种磁存储器件包括多个字线,多个位线布置成与字线相交,MRAM单元阵列包括多个磁性随机存取存储器(MRAM)单元,布置在字线和 位线,以读取模式向MRAM单元提供读取电流的读取电流源,检测由读取电流产生的MRAM单元的端子电压以产生检测输出信号的读出放大器,锁存电路 检测输出信号以输出读取数据;以及数据写入电路,其根据写入模式中的写入数据向MRAM单元提供写入电流,以执行写入,并根据读取的数据将写入电流提供给MRAM单元 读取模式进行重写。
    • 6. 发明授权
    • Digital-to-analog converter and wireless communication apparatus
    • 数模转换器和无线通信装置
    • US08682264B2
    • 2014-03-25
    • US13238033
    • 2011-09-21
    • Daisuke Kurose
    • Daisuke Kurose
    • H04B1/02H03M1/66
    • H01L27/088H01L27/0207
    • According to one embodiment, a digital-to-analog converter includes a plurality of cells. Each cell includes a current source and a differential switch. The current source includes a first transistor arranged in a first region and connected to either a power source or a ground, a second transistor arranged in a second region which is different from the first region and connected directly or indirectly with the first transistor in a cascode configuration, and a metallic interconnect connecting the first region and the second region electrically. The differential switch includes a pair of transistors, each connected to the second transistor and arranged in the second region.
    • 根据一个实施例,数模转换器包括多个单元。 每个单元包括电流源和差分开关。 电流源包括布置在第一区域中并连接到电源或接地的第一晶体管,布置在第二区域中的第二晶体管,该第二区域与第一区域不同,并且与第一晶体管直接或间接连接在共源共栅 配置,以及电连接第一区域和第二区域的金属互连。 差分开关包括一对晶体管,每个晶体管连接到第二晶体管并且布置在第二区域中。
    • 7. 发明申请
    • DIGITAL-TO-ANALOG CONVERTER AND WIRELESS COMMUNICATION APPARATUS
    • 数字到模拟转换器和无线通信设备
    • US20120071114A1
    • 2012-03-22
    • US13238033
    • 2011-09-21
    • Daisuke Kurose
    • Daisuke Kurose
    • H04B1/02H03M1/66
    • H01L27/088H01L27/0207
    • According to one embodiment, a digital-to-analog converter includes a plurality of cells. Each cell includes a current source and a differential switch. The current source includes a first transistor arranged in a first region and connected to either a power source or a ground, a second transistor arranged in a second region which is different from the first region and connected directly or indirectly with the first transistor in a cascode configuration, and a metallic interconnect connecting the first region and the second region electrically. The differential switch includes a pair of transistors, each connected to the second transistor and arranged in the second region.
    • 根据一个实施例,数模转换器包括多个单元。 每个单元包括电流源和差分开关。 电流源包括布置在第一区域中并连接到电源或接地的第一晶体管,布置在第二区域中的第二晶体管,该第二区域与第一区域不同,并且与第一晶体管直接或间接连接在共源共栅 配置,以及电连接第一区域和第二区域的金属互连。 差分开关包括一对晶体管,每个晶体管连接到第二晶体管并且布置在第二区域中。
    • 8. 发明申请
    • MAGNETIC STORAGE DEVICE
    • 磁性存储器件
    • US20110149640A1
    • 2011-06-23
    • US13039633
    • 2011-03-03
    • Masanori FurutaDaisuke KuroseTsutomu Sugawara
    • Masanori FurutaDaisuke KuroseTsutomu Sugawara
    • G11C11/00
    • G11C7/14G11C7/02G11C7/067G11C11/1659G11C11/1673
    • A magnetic storage device includes a plurality of MRAM memory cells connected to a data transfer line, a clamp transistor connected between the data transfer line and a reading signal line and configured to fixedly hold the potential of the data transfer line, and a reading circuit which is connected to the reading signal line and which reads the storage information of the memory cell. The reading circuit includes a hold switch connected between the reading signal line and a reading node N and configured to hold the potential of the node N, a capacitor connected between the node N and a ground end, a precharging switch connected between the node N and a power source and configured to charge the capacitor, and an inverter to which the potential of the node N is input to generate a digital signal.
    • 磁存储装置包括连接到数据传输线的多个MRAM存储单元,连接在数据传送线和读取信号线之间并被配置为固定地保持数据传输线的电位的钳位晶体管,以及读取电路, 连接到读取信号线并读出存储单元的存储信息。 读取电路包括连接在读取信号线和读取节点N之间并被​​配置为保持节点N的电位的保持开关,连接在节点N和接地端之间的电容器,连接在节点N和节点N之间的预充电开关 电源,并且被配置为对电容器充电;以及逆变器,输入节点N的电位以产生数字信号。
    • 10. 发明申请
    • COMPARATOR AND ANALOG-TO-DIGITAL CONVERTER USING THE SAME
    • 使用相同的比较器和模拟数字转换器
    • US20090045995A1
    • 2009-02-19
    • US12175209
    • 2008-07-17
    • Mai NOZAWADaisuke KuroseTakeshi UenoTetsuro Itakura
    • Mai NOZAWADaisuke KuroseTakeshi UenoTetsuro Itakura
    • H03M1/34
    • H03K5/2481H03K5/249
    • A comparator includes a first inverter which is inserted between a power source terminal and one end of a first variable resistor, includes a first FinFET provided with a first gate terminal for receiving a positive phase output signal, and a second gate terminal for receiving a clock signal changing between a first level and a second level, inverts the positive phase output signal, and outputs a negative phase output signal, and a second inverter which is inserted between the power source terminal and one end of a second variable resistor, includes a second FinFET provided with a third gate terminal for receiving the negative phase output signal, a fourth gate terminal for receiving the clock signal, and the same polarity as the first FinFET, inverts the negative phase output signal, and outputs the positive phase output signal.
    • 比较器包括插入在电源端子和第一可变电阻器的一端之间的第一反相器,包括:第一FinFET,其具有用于接收正相输出信号的第一栅极端子和用于接收时钟的第二栅极端子 信号在第一电平和第二电平之间变化,使正相输出信号反相,并输出负相输出信号,并且插入在电源端和第二可变电阻的一端之间的第二反相器包括第二 FinFET具有用于接收负相输出信号的第三栅极端子,用于接收时钟信号的第四栅极端子和与第一FinFET相同的极性,反相负相输出信号,并输出正相输出信号。