专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08598018B2 Forming an electrode having reduced corrosion and water decomposition on surface using a custom oxide layer 失效
标题翻译：使用定制的氧化物层形成表面上具有降低的腐蚀和水分解的电极
公开(公告)号：US08598018B2
公开(公告)日：2013-12-03
申请号：US12820487
申请日：2010-06-22
申请人： Ali Afzali-Azdakani , Shafaat Ahmed , Hariklia Deligianni , Dario L. Goldfarb , Stefan Harrer , Hongbo Peng , Stanislav Polonsky , Stephen Rossnagel , Xiaoyan Shao , Gustavo A. Stolovitzky
发明人： Ali Afzali-Azdakani , Shafaat Ahmed , Hariklia Deligianni , Dario L. Goldfarb , Stefan Harrer , Hongbo Peng , Stanislav Polonsky , Stephen Rossnagel , Xiaoyan Shao , Gustavo A. Stolovitzky
IPC分类号： H01L21/20 , H01L21/36 , H01L21/283
CPC分类号： C23C8/02 , C23C8/36 , C23C14/5853 , G01N33/48721
摘要： The present invention provides a method of forming an electrode having reduced corrosion and water decomposition on a surface thereof. A conductive layer is deposited on a substrate. The conductive layer is partially oxidized by an oxygen plasma process to convert a portion thereof to an oxide layer thereby forming the electrode. The oxide layer is free of surface defects and the thickness of the oxide layer is from about 0.09 nm to about 10 nm and ranges therebetween, controllable with 0.2 nm precision.
摘要翻译：本发明提供一种在其表面上形成具有降低的腐蚀和水分解的电极的方法。导电层沉积在基底上。导电层被氧等离子体工艺部分地氧化，将其一部分转化成氧化层，从而形成电极。氧化物层没有表面缺陷，氧化物层的厚度为约0.09nm至约10nm，并且其间的范围可以0.2nm精度控制。

2. 发明授权

US08373271B2 Interconnect structure with an oxygen-doped SiC antireflective coating and method of fabrication 有权
标题翻译：具有氧掺杂的SiC抗反射涂层的互连结构和制造方法
公开(公告)号：US08373271B2
公开(公告)日：2013-02-12
申请号：US12788912
申请日：2010-05-27
申请人： Dario L. Goldfarb , Ranee W. Kwong , Qinghuang Lin , Deborah A. Neumayer , Hosadurga Shobha
发明人： Dario L. Goldfarb , Ranee W. Kwong , Qinghuang Lin , Deborah A. Neumayer , Hosadurga Shobha
IPC分类号： H01L23/532
CPC分类号： H01L21/76802 , H01L21/02126 , H01L21/022 , H01L21/02274 , H01L21/02282 , H01L21/76808 , H01L21/76829 , H01L21/76832 , H01L21/76835 , H01L23/53223 , H01L23/53238 , H01L23/53266 , H01L23/53271 , H01L23/53276 , H01L23/5329 , H01L23/53295 , H01L2924/0002 , H01L2924/12044 , H01L2924/00
摘要： An interconnect structure is provided that includes at least one patterned and cured photo-patternable low k material located on a surface of a patterned and cured oxygen-doped SiC antireflective coating (ARC). A conductively filled region is located within the at least one patterned and cured photo-patternable low k material and the patterned and cured oxygen-doped SiC ARC. The oxygen-doped SiC ARC, which is a thin layer (i.e., less than 400 angstroms), does not produce standing waves that may degrade the diffusion barrier and the electrically conductive feature that are embedded within the patterned and cured photo-patternable low k dielectric material and, as such, structural integrity is maintained. Furthermore, since a thin oxygen-doped SiC ARC is employed, the plasma etch process time used to open the material stack of the ARC/dielectric cap can be reduced, thus reducing potential plasma damage to the patterned and cured photo-patternable low k material. Also, the oxygen-doped SiC ARC can withstand current BEOL processing conditions.
摘要翻译：提供了一种互连结构，其包括位于图案化和固化的氧掺杂的SiC抗反射涂层（ARC）的表面上的至少一个图案化和固化的可光图案化的低k材料。导电填充区域位于至少一个图案化和固化的可光图案化低k材料和图案化和固化的氧掺杂SiC ARC内。作为薄层（即，小于400埃）的氧掺杂SiC ARC不产生可能降解扩散阻挡层和嵌入图案化和固化的可光图案化低k内的导电特征的驻波介电材料，因此，维持结构完整性。此外，由于采用薄的氧掺杂SiC ARC，所以可以减少用于打开ARC /电介质盖的材料堆叠的等离子体蚀刻处理时间，从而减少图案化和固化的可光图案化的低k材料的潜在的等离子体损伤。此外，氧掺杂的SiC ARC可以承受当前的BEOL加工条件。

3. 发明授权

US08293451B2 Near-infrared absorbing film compositions 有权
标题翻译：近红外吸收膜组合物
公开(公告)号：US08293451B2
公开(公告)日：2012-10-23
申请号：US12543003
申请日：2009-08-18
申请人： Martin Glodde , Dario L. Goldfarb , Wu-Song Huang , Wai-Kin Li , Sen Liu , Pushkara R. Varanasi , Libor Vyklicky
发明人： Martin Glodde , Dario L. Goldfarb , Wu-Song Huang , Wai-Kin Li , Sen Liu , Pushkara R. Varanasi , Libor Vyklicky
IPC分类号： G03F7/00 , G03F7/004 , G03F7/028
CPC分类号： G03F7/091 , G03F9/7026
摘要： A curable liquid formulation containing at least (i) one or more near-infrared absorbing triphenylamine-based dyes, and (ii) one or more casting solvents. The invention is also directed to solid near-infrared absorbing films composed of crosslinked forms of the curable liquid formulation. The invention is also directed to a microelectronic substrate containing a coating of the solid near-infrared absorbing film as well as a method for patterning a photoresist layer coated on a microelectronic substrate in the case where the near-infrared absorbing film is between the microelectronic substrate and a photoresist film.
摘要翻译：包含至少（i）一种或多种近红外吸收性三苯胺类染料的可固化液体制剂，和（ii）一种或多种浇铸溶剂。本发明还涉及由可固化液体制剂的交联形式组成的固体近红外吸收膜。本发明还涉及一种含有固体近红外线吸收膜的涂层的微电子衬底，以及在近红外吸收膜位于微电子衬底之间的情况下，用于图案化涂覆在微电子衬底上的光刻胶层的方法和光刻胶膜。

4. 发明授权

US08124485B1 Molecular spacer layer for semiconductor oxide surface and high-K dielectric stack 失效
标题翻译：用于半导体氧化物表面和高K电介质叠层的分子间隔层
公开(公告)号：US08124485B1
公开(公告)日：2012-02-28
申请号：US13032909
申请日：2011-02-23
申请人： Dario L. Goldfarb , Hemanth N. Jagannathan , Dirk Pfeiffer
发明人： Dario L. Goldfarb , Hemanth N. Jagannathan , Dirk Pfeiffer
IPC分类号： H01L21/00
CPC分类号： B82Y30/00 , H01L21/02112 , H01L21/02282 , H01L21/0271 , H01L21/31144 , H01L21/76224
摘要： A process for defining a functional area in a semiconductor device comprising a semiconductor substrate contiguous with a gate dielectric layer whose dielectric constant is higher than silicon oxide and an oxide capping layer positioned on the gate dielectric layer that reduces gate leakage comprises applying an organo phosphorous SAM to the oxide capping layer, adhering an organic photoresist layer to the organo phosphorous SAM, defining the functional area by imaging the photoresist layer with a functional area image, developing and removing the functional area image in the photoresist to form a functional area image on the organo phosphorous SAM, and removing the functional area image on the organo phosphorous SAM to form a functional area image on the oxide capping layer. In various embodiments, the gate dielectric layer comprises a HfO2 dielectric layer, the oxide capping layer comprises a La2O3 layer, and the organo phosphorous acid comprises an alkyl phosphonic acid, a carboxylic acid-terminated alkyl phosphonic acid, and mixtures thereof.
摘要翻译：一种用于限定半导体器件中的功能区域的方法，包括与其介电常数高于氧化硅的栅极电介质层邻接的半导体衬底以及位于栅极电介质层上的减少栅极泄漏的氧化物覆盖层的方法包括施加有机磷SAM 将有机光致抗蚀剂层粘合到有机磷SAM上，通过用功能区域图像对光致抗蚀剂层进行成像来限定功能区域，在光致抗蚀剂中显影和去除功能区域图像，以形成功能区域图像有机磷SAM，去除有机磷SAM上的功能区图像，以在氧化物覆盖层上形成功能区图像。在各种实施例中，栅介质层包括HfO 2电介质层，氧化物覆盖层包含La 2 O 3层，有机亚磷酸包括烷基膦酸，羧酸封端的烷基膦酸及其混合物。

5. 发明申请

US20110312164A1 FORMING AN ELECTRODE HAVING REDUCED CORROSION AND WATER DECOMPOSITION ON SURFACE USING A CUSTOM OXIDE LAYER 失效
标题翻译：使用自定义氧化层形成具有降低腐蚀性和表面水分解的电极
公开(公告)号：US20110312164A1
公开(公告)日：2011-12-22
申请号：US12820487
申请日：2010-06-22
申请人： Ali Afzali-Azdakani , Shafaat Ahmed , Hariklia Deligianni , Dario L. Goldfarb , Stefan Harrer , Hongbo Peng , Stanislav Polonsky , Stephen Rossnagel , Xiaoyan Shao , Gustavo A. Stolovitzky
发明人： Ali Afzali-Azdakani , Shafaat Ahmed , Hariklia Deligianni , Dario L. Goldfarb , Stefan Harrer , Hongbo Peng , Stanislav Polonsky , Stephen Rossnagel , Xiaoyan Shao , Gustavo A. Stolovitzky
IPC分类号： H01L21/20 , H01L21/36 , C23C14/34 , G03F7/20 , C30B23/02 , C30B25/02 , C23C28/00 , B05D3/06 , C23C14/08
CPC分类号： C23C8/02 , C23C8/36 , C23C14/5853 , G01N33/48721
摘要： The present invention provides a method of forming an electrode having reduced corrosion and water decomposition on a surface thereof. A conductive layer is deposited on a substrate. The conductive layer is partially oxidized by an oxygen plasma process to convert a portion thereof to an oxide layer thereby forming the electrode. The oxide layer is free of surface defects and the thickness of the oxide layer is from about 0.09 nm to about 10 nm and ranges therebetween, controllable with 0.2 nm precision.
摘要翻译：本发明提供一种在其表面上形成具有降低的腐蚀和水分解的电极的方法。导电层沉积在基底上。导电层被氧等离子体工艺部分地氧化，将其一部分转化成氧化层，从而形成电极。氧化物层没有表面缺陷，氧化物层的厚度为约0.09nm至约10nm，并且其间的范围可以0.2nm精度控制。

6. 发明申请

US20110204523A1 METHOD OF FABRICATING DUAL DAMASCENE STRUCTURES USING A MULTILEVEL MULTIPLE EXPOSURE PATTERNING SCHEME 有权
标题翻译：使用多次多次曝光方案制作双重结构结构的方法
公开(公告)号：US20110204523A1
公开(公告)日：2011-08-25
申请号：US12708877
申请日：2010-02-19
申请人： John C. Arnold , Kuang-Jung Chen , Matthew E. Colburn , Dario L. Goldfarb , Stefan Harrer , Steven J. Holmes , Pushkara Varanasi
发明人： John C. Arnold , Kuang-Jung Chen , Matthew E. Colburn , Dario L. Goldfarb , Stefan Harrer , Steven J. Holmes , Pushkara Varanasi
IPC分类号： H01L23/522 , G03F7/20
CPC分类号： H01L23/53295 , G03F7/091 , G03F7/38 , H01L21/0274 , H01L21/31144 , H01L21/76811 , H01L21/76813 , H01L2221/1021 , H01L2924/0002 , H01L2924/00
摘要： A method for fabricating a dual damascene structure includes providing a first photoresist layer coated on an underlying dielectric stack, exposing said first photoresist layer to a first predetermined pattern of light, coating a second photoresist layer onto the pre-exposed first photoresist layer, exposing said second photoresist layer to a second predetermined pattern of light, optionally post-exposure baking the multi-tiered photoresist layers and developing said photoresist layers to form a multi-tiered dual damascene structure in the photoresist layers.
摘要翻译：一种用于制造双镶嵌结构的方法包括提供涂覆在下面的电介质堆叠上的第一光致抗蚀剂层，将所述第一光致抗蚀剂层暴露于第一预定图案的光，将第二光致抗蚀剂层涂覆到预曝光的第一光致抗蚀剂层上，第二光致抗蚀剂层到第二预定图案的光，任选地后曝光烘烤多层光致抗蚀剂层并显影所述光致抗蚀剂层以在光致抗蚀剂层中形成多层双镶嵌结构。

7. 发明授权

US07229936B2 Method to reduce photoresist pattern collapse by controlled surface microroughening 有权
标题翻译：通过控制表面微透镜减少光致抗蚀剂图案崩溃的方法
公开(公告)号：US07229936B2
公开(公告)日：2007-06-12
申请号：US10709406
申请日：2004-05-03
申请人： Colin J. Brodsky , Scott J. Bukofsky , Dario L. Goldfarb , Scott D. Halle
发明人： Colin J. Brodsky , Scott J. Bukofsky , Dario L. Goldfarb , Scott D. Halle
IPC分类号： H01L21/31
CPC分类号： G03F7/091 , H01L21/0276 , H01L21/31127 , H01L21/31133 , H01L21/31138 , H01L21/312
摘要： A method is provided for preparing a substrate for photolithographic patterning. The method includes providing a substrate having at least an exposed rough surface layer including a polymeric material. The rough surface layer has surface features characterized by feature step height varying between about two percent and twenty percent of the minimum photolithographic half-pitch. A layer of photoresist material is then provided over the exposed rough surface layer and patterned.
摘要翻译：提供了一种制备用于光刻图案的衬底的方法。该方法包括提供具有至少暴露的包含聚合材料的粗糙表面层的基底。粗糙表面层具有表征特征，其特征在于最小光刻半间距的约百分之二到百分之二的特征步长。然后在暴露的粗糙表面层上提供一层光致抗蚀剂材料并图案化。

8. 发明授权

US06997197B2 Apparatus and method for rapid thermal control of a workpiece in liquid or dense phase fluid 失效
标题翻译：液体或致密相流体中工件快速热控制的装置和方法
公开(公告)号：US06997197B2
公开(公告)日：2006-02-14
申请号：US10318632
申请日：2002-12-13
申请人： John P. Simons , Kenneth J. McCullough , Wayne M. Moreau , John M. Cotte , Keith R. Pope , Charles J. Taft , Dario L. Goldfarb
发明人： John P. Simons , Kenneth J. McCullough , Wayne M. Moreau , John M. Cotte , Keith R. Pope , Charles J. Taft , Dario L. Goldfarb
IPC分类号： B08B7/00
CPC分类号： H01L21/02101 , B08B7/0021 , H01L21/67109 , H01L21/67248 , Y10S134/902
摘要： A surface cleaning apparatus comprising a chamber, and a thermal transfer device. The chamber is capable of holding a semiconductor structure therein. The thermal transfer device is connected to the chamber. The thermal transfer device has a surface disposed inside the chamber for contacting the semiconducting structure and controlling a temperature of the semiconductor structure in contact with the surface. The thermal transfer device has a thermal control module connected to the surface for heating and cooling the surface to thermally cycle the surface. The thermal control module effects a substantially immediate thermal response of the surface when thermally recycling the surface.
摘要翻译：一种表面清洁装置，包括腔室和热转印装置。该室能够在其中保持半导体结构。热传递装置连接到腔室。热传递装置具有设置在室内的表面，用于接触半导体结构并控制与表面接触的半导体结构的温度。热转印装置具有连接到表面的热控制模块，用于加热和冷却表面以使表面热循环。当热再循环表面时，热控制模块会对表面产生实质上即时的热响应。

9. 发明授权

US06398875B1 Process of drying semiconductor wafers using liquid or supercritical carbon dioxide 失效
标题翻译：使用液体或超临界二氧化碳干燥半导体晶片的工艺
公开(公告)号：US06398875B1
公开(公告)日：2002-06-04
申请号：US09893231
申请日：2001-06-27
申请人： John Michael Cotte , Dario L. Goldfarb , Kenneth John McCullough , Wayne Martin Moreau , Keith R. Pope , John P. Simons , Charles J. Taft
发明人： John Michael Cotte , Dario L. Goldfarb , Kenneth John McCullough , Wayne Martin Moreau , Keith R. Pope , John P. Simons , Charles J. Taft
IPC分类号： B08B304
CPC分类号： H01L21/02054 , H01L21/02063 , H01L21/67034 , Y10S134/902
摘要： A process of drying a semiconductor wafer which includes at least one microelectric structure disposed thereon which includes contacting a water-containing thin film-covered semiconductor wafer with a composition which includes liquid or supercritical carbon dioxide and a surfactant.
摘要翻译：一种干燥包括设置在其上的至少一个微电结构的半导体晶片的工艺，其包括使含水薄膜覆盖的半导体晶片与包括液体或超临界二氧化碳和表面活性剂的组合物接触。

10. 发明授权

US08536031B2 Method of fabricating dual damascene structures using a multilevel multiple exposure patterning scheme 有权
公开(公告)号：US08536031B2
公开(公告)日：2013-09-17
申请号：US12708877
申请日：2010-02-19
申请人： John C. Arnold , Kuang-Jung Chen , Matthew E. Colburn , Dario L. Goldfarb , Stefan Harrer , Steven J. Holmes , Pushkara Varanasi
发明人： John C. Arnold , Kuang-Jung Chen , Matthew E. Colburn , Dario L. Goldfarb , Stefan Harrer , Steven J. Holmes , Pushkara Varanasi
IPC分类号： H01L21/26 , H01L21/42
CPC分类号： H01L23/53295 , G03F7/091 , G03F7/38 , H01L21/0274 , H01L21/31144 , H01L21/76811 , H01L21/76813 , H01L2221/1021 , H01L2924/0002 , H01L2924/00
摘要： A method for fabricating a dual damascene structure includes providing a first photoresist layer coated on an underlying dielectric stack, exposing said first photoresist layer to a first predetermined pattern of light, coating a second photoresist layer onto the pre-exposed first photoresist layer, exposing said second photoresist layer to a second predetermined pattern of light, optionally post-exposure baking the multi-tiered photoresist layers and developing said photoresist layers to form a multi-tiered dual damascene structure in the photoresist layers.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式