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1. 发明授权

US07897943B2 Controlling the characteristics of implanter ion-beams 有权
公开(公告)号：US07897943B2
公开(公告)日：2011-03-01
申请号：US11341839
申请日：2006-01-27
申请人： Kenneth H. Purser , Harald A. Enge , Norman L. Turner
发明人： Kenneth H. Purser , Harald A. Enge , Norman L. Turner
IPC分类号： G21K5/04
CPC分类号： H01J37/141 , H01J37/14 , H01J37/147 , H01J37/1472 , H01J37/153 , H01J37/315 , H01J37/3171 , H01J2237/141 , H01J2237/1534 , H01J2237/31703
摘要： A method and apparatus satisfying growing demands for improving the precision of angle of incidence of implanting ions that impact a semiconductor wafer and the precision of ribbon ion beams for uniform doping of wafers as they pass under an ion beam. The method and apparatus are directed to the design and combination together of novel magnetic ion-optical transport elements for implantation purposes. The design of the optical elements makes possible: (1) Broad-range adjustment of the width of a ribbon beam at the work piece; (2) Correction of inaccuracies in the intensity distribution across the width of a ribbon beam; (3) Independent steering about both X and Y axes; (4) Angle of incidence correction at the work piece; and (5) Approximate compensation for the beam expansion effects arising from space charge. In a practical situation, combinations of the elements allow ribbon beam expansion between source and work piece to 350 millimeter, with good uniformity and angular accuracy. Also, the method and apparatus may be used for introducing quadrupole fields along a beam line.

2. 发明授权

US07351984B2 Controlling the characteristics of implanter ion-beams 有权
标题翻译：控制注入离子束的特性
公开(公告)号：US07351984B2
公开(公告)日：2008-04-01
申请号：US11784073
申请日：2007-04-05
申请人： Kenneth H. Purser , Harald A. Enge , Norman L. Turner
发明人： Kenneth H. Purser , Harald A. Enge , Norman L. Turner
IPC分类号： H01J21/425
CPC分类号： H01J37/141 , H01J37/14 , H01J37/147 , H01J37/1472 , H01J37/153 , H01J37/315 , H01J37/3171 , H01J2237/141 , H01J2237/1534 , H01J2237/31703
摘要： A method and apparatus satisfying growing demands for improving the precision of angle of incidence of implanting ions that impact a semiconductor wafer and the precision of ribbon ion beams for uniform doping of wafers as they pass under an ion beam. The method and apparatus are directed to the design and combination together of novel magnetic ion-optical transport elements for implantation purposes. The design of the optical elements makes possible: (1) Broad-range adjustment of the width of a ribbon beam at the work piece; (2) Correction of inaccuracies in the intensity distribution across the width of a ribbon beam; (3) Independent steering about both X and Y axes; (4) Angle of incidence correction at the work piece; and (5) Approximate compensation for the beam expansion effects arising from space charge. In a practical situation, combinations of the elements allow ribbon beam expansion between source and work piece to 350 millimeter, with good uniformity and angular accuracy. Also, the method and apparatus may be used for introducing quadrupole fields along a beam line.
摘要翻译：一种满足日益增长的要求的方法和装置，用于提高冲击半导体晶片的注入离子入射角的精度以及当离子束通过时晶片的均匀掺杂的带状离子束的精度。该方法和装置涉及用于植入目的的新型磁离子 - 光学传输元件的设计和组合。光学元件的设计成为可能：（1）宽幅调节工件上的带状光束的宽度; （2）纠正带状横梁宽度的强度分布不准确; （3）关于X轴和Y轴的独立转向; （4）工件入射角校正; 和（5）空间费用引起的光束膨胀效应的近似补偿。在实际情况下，这些元件的组合允许源和工件之间的带状光束膨胀到350毫米，具有良好的均匀性和角度精度。此外，该方法和装置可用于沿着光束线引入四极场。

3. 发明授权

US5451790A Method of treating waste or drinking water with high-energy electrons and apparatus therefor 失效
标题翻译：用高能电子处理废水或饮用水的方法及其设备
公开(公告)号：US5451790A
公开(公告)日：1995-09-19
申请号：US184600
申请日：1994-01-21
申请人： Harald A. Enge
发明人： Harald A. Enge
IPC分类号： G01N23/12
CPC分类号： C02F1/305 , G01N23/12 , C02F1/78 , C02F2209/03 , C02F2209/40 , C02F2303/04
摘要： In apparatus for irradiating fluid material with an electron beam, a tubular or circular flow is imparted to the fluid material to be irradiated while a rotary motion is imparted to the electron beam, so that the point of intersection between the electron beam and the fluid material repeatedly moves around a circle through which the material passes.
摘要翻译：在用电子束照射流体材料的装置中，在向电子束施加旋转运动的同时，向待照射的流体材料施加管状或圆形流动，使得电子束和流体材料之间的交点重复地围绕材料通过的圆周移动。

4. 发明授权

US5402094A MRI mammography magnet 失效
标题翻译： MRI乳腺摄影磁铁
公开(公告)号：US5402094A
公开(公告)日：1995-03-28
申请号：US290687
申请日：1994-08-15
申请人： Harald A. Enge
发明人： Harald A. Enge
IPC分类号： G01R33/38 , G01R33/3873 , G01R33/3875 , H01F7/20 , G01R33/20 , H01F3/00 , H01F5/00
CPC分类号： G01R33/3875 , H01F7/202 , G01R33/3806 , G01R33/3873
摘要： A magnet is specially designed for the creation of an extremely uniform magnetic field in a small volume for use in MRI mammography. A disk of ferromagnetic material has a surface having a well adapted to receive the object to be examined and lined with a solenoidal coil which provides the basic magnetic field. Uniformity is increased by three additional coils surrounding the solenoidal coil and placed in annular slots surrounding the well. Of these three additional coils, the middle one generates a magnetic field in the well which opposes the basic magnetic field, and the others supplement the basic magnetic field. The ampereturns of the three additional coils are selected to maximize uniformity of the magnetic field in the well.
摘要翻译：磁铁专门用于创建一个小体积的非常均匀的磁场，用于MRI乳房X线照相术。铁磁材料盘具有适于接收待检测物体的表面，并且衬有提供基本磁场的螺线管线圈。通过围绕螺线管线圈的三个附加线圈增加均匀性，并放置在围绕井的环形槽中。在这三个附加线圈中，中间的一个在井中产生与基本磁场相反的磁场，而其他线圈补充基本磁场。选择三个附加线圈的安培数以最大化井中的磁场的均匀性。

5. 发明授权

US4745281A Ion beam fast parallel scanning having dipole magnetic lens with nonuniform field 失效
标题翻译：离子束快速平行扫描具有非均匀场的偶极磁性透镜
公开(公告)号：US4745281A
公开(公告)日：1988-05-17
申请号：US899966
申请日：1986-08-25
申请人： Harald A. Enge
发明人： Harald A. Enge
IPC分类号： H01J37/141 , G21K1/00 , H01J3/14 , H01J3/20 , H01J37/00 , H01J37/147 , H01J37/317
CPC分类号： H01J37/147
摘要： An ion source provides ions that pass through an analyzing magnet, image slit, and magnetic quadrupole lenses before entering a beam deflector. The deflected ion beam enters a magnetic field established by a dipole magnetic lens of rectangular cross section in planes parallel to the beam plane including the scanned ion beam, and having a variable width gap in a plane perpendicular to the beam plane that provides a parallel scanned ion beam. The parallel scanned ion beam enters a slot-shaped acceleration columnn and then scans a target.
摘要翻译：离子源提供在进入光束偏转器之前通过分析磁体，图像狭缝和磁性四极透镜的离子。偏转的离子束进入由与包括扫描离子束在内的平面平行的平面中的矩形横截面的偶极磁性透镜建立的磁场，并且在垂直于光束平面的平面中具有可变的宽度间隙，该平面提供平行扫描离子束。并行扫描离子束进入槽形加速度列，然后扫描目标。

6. 发明授权

US06933507B2 Controlling the characteristics of implanter ion-beams 有权
标题翻译：控制注入离子束的特性
公开(公告)号：US06933507B2
公开(公告)日：2005-08-23
申请号：US10619702
申请日：2003-07-15
申请人： Kenneth H. Purser , Harald A. Enge , Norman L. Turner
发明人： Kenneth H. Purser , Harald A. Enge , Norman L. Turner
IPC分类号： H01J37/141 , H01J37/08 , H01J37/14 , H01J37/147 , H01J37/315 , H01J37/317 , H01L21/425
CPC分类号： H01J37/141 , H01J37/14 , H01J37/147 , H01J37/1472 , H01J37/153 , H01J37/315 , H01J37/3171 , H01J2237/141 , H01J2237/1534 , H01J2237/31703
摘要： A method and apparatus satisfying growing demands for improving the precision of angle of incidence of implanting ions that impact a semiconductor wafer and the precision of ribbon ion beams for uniform doping of wafers as they pass under an ion beam. The method and apparatus are directed to the design and combination together of novel magnetic ion-optical transport elements for implantation purposes. The design of the optical elements makes possible: (1) Broad-range adjustment of the width of a ribbon beam at the work piece; (2) Correction of inaccuracies in the intensity distribution across the width of a ribbon beam; (3) Independent steering about both X and Y axes; (4) Angle of incidence correction at the work piece; and (5) Approximate compensation for the beam expansion effects arising from space charge. In a practical situation, combinations of the elements allow ribbon beam expansion between source and work piece to 350 millimeter, with good uniformity and angular accuracy. Also, the method and apparatus may be used for introducing quadrupole fields along a beam line.
摘要翻译：一种满足日益增长的要求的方法和装置，用于提高冲击半导体晶片的注入离子入射角的精度以及当离子束通过时晶片的均匀掺杂的带状离子束的精度。该方法和装置涉及用于植入目的的新型磁离子 - 光学传输元件的设计和组合。光学元件的设计成为可能：（1）宽幅调节工件上的带状光束的宽度; （2）纠正带状横梁宽度的强度分布不准确; （3）关于X轴和Y轴的独立转向; （4）工件入射角校正; 和（5）空间费用引起的光束膨胀效应的近似补偿。在实际情况下，这些元件的组合允许源和工件之间的带状光束膨胀到350毫米，具有良好的均匀性和角度精度。此外，该方法和装置可用于沿着光束线引入四极场。

7. 发明授权

US5689112A Apparatus for detection of surface contaminations on silicon wafers 失效
标题翻译：用于检测硅晶片表面污染的装置
公开(公告)号：US5689112A
公开(公告)日：1997-11-18
申请号：US631059
申请日：1996-04-12
申请人： Harald A. Enge , William A. Lanford
发明人： Harald A. Enge , William A. Lanford
IPC分类号： G01Q90/00 , H01J37/252 , H01J49/44
CPC分类号： H01J49/463 , H01J37/252 , H01J2237/0225 , H01J2237/053 , H01J2237/1207
摘要： Surface contamination of silicon wafers is detected by a combined beam-deflecting magnet and magnetic spectrometer system. Heavy ions are directed onto the surface of a silicon wafer through the beam-deflecting magnet, and ions back-scattered from contaminants in the surface of the wafer pass through the magnetic spectrometer onto a focal-plane detector. One or more Einzel lenses prevent ions back-scattered from the silicon in the wafer from reaching the detector.
摘要翻译：通过组合的光束偏转磁体和磁谱仪系统检测硅晶片的表面污染。重离子通过光束偏转磁体被引导到硅晶片的表面上，并且从晶片表面的污染物反向散射的离子通过磁性光谱仪进入焦平面检测器。一个或多个Einzel透镜防止从晶片中的硅反向散射的离子到达检测器。

8. 发明授权

US5508515A Mass recombinator for accelerator mass spectrometry 失效
标题翻译：用于加速器质谱的质谱重组器
公开(公告)号：US5508515A
公开(公告)日：1996-04-16
申请号：US398758
申请日：1995-03-06
申请人： Harald A. Enge
发明人： Harald A. Enge
IPC分类号： H01J49/32 , H01J49/30
CPC分类号： H01J49/0086 , H01J49/328
摘要： A mass recombinator comprises a source of negative ions to be analyzed. These negative ions are accelerated to roughly the same moderate kinetic energy and electrostatically focused to a substantially parallel beam which enters the magnetic field of a dipole magnet at an angle of incidence. The field of the dipole magnet is designed to deflect a substantially parallel beam of negative ions having the same energy and entering at a specified angle of incidence in such a manner that it describes a loop of approximately 264.6 degrees, forming a mass spectrum at a position inside the magnet after deflection of approximately 132.3 degrees. The beam exits the field as a parallel beam substantially where it entered, independent of the mass of the ions. Means are provided at the position of the mass spectrum to block ions of certain mass numbers and to allow others to pass, the passed ions being reassembled and exiting the magnet as a parallel beam substantially where it entered, independent of the mass numbers of the ions.
摘要翻译：质量重组器包括待分析的负离子源。这些负离子被加速到大致相同的中等动能并静电聚焦成基本平行的光束，其以入射角进入偶极子磁体的磁场。偶极磁体的场被设计成偏转具有相同能量的基本上平行的具有相同能量的负离子束并且以指定的入射角进入，使得它描述大约264.6度的环，在位置处形成质谱磁铁内部偏转约132.3度。光束作为基本上进入的平行光束离开场，与离子的质量无关。在质谱位置设置了阻挡某些质量数的离子并允许其它物质通过的装置，通过的离子被重新组装并且作为基本上在其进入的平行光束离开磁体，与离子的质量数无关。

9. 发明授权

US07888660B2 Controlling the characteristics of implanter ion-beams 有权
标题翻译：控制注入离子束的特性
公开(公告)号：US07888660B2
公开(公告)日：2011-02-15
申请号：US11341838
申请日：2006-01-27
申请人： Kenneth H. Purser , Harald A. Enge , Norman L. Turner
发明人： Kenneth H. Purser , Harald A. Enge , Norman L. Turner
IPC分类号： G21K5/04
CPC分类号： H01J37/141 , H01J37/14 , H01J37/147 , H01J37/1472 , H01J37/153 , H01J37/315 , H01J37/3171 , H01J2237/141 , H01J2237/1534 , H01J2237/31703
摘要： A method and apparatus satisfying growing demands for improving the precision of angle of incidence of implanting ions that impact a semiconductor wafer and the precision of ribbon ion beams for uniform doping of wafers as they pass under an ion beam. The method and apparatus are directed to the design and combination together of novel magnetic ion-optical transport elements for implantation purposes. The design of the optical elements makes possible: (1) Broad-range adjustment of the width of a ribbon beam at the work piece; (2) Correction of inaccuracies in the intensity distribution across the width of a ribbon beam; (3) Independent steering about both X and Y axes; (4) Angle of incidence correction at the work piece; and (5) Approximate compensation for the beam expansion effects arising from space charge. In a practical situation, combinations of the elements allow ribbon beam expansion between source and work piece to 350 millimeter, with good uniformity and angular accuracy. Also, the method and apparatus may be used for introducing quadrupole fields along a beam line.
摘要翻译：一种满足日益增长的要求的方法和装置，用于提高冲击半导体晶片的注入离子入射角的精度以及当离子束通过时晶片的均匀掺杂的带状离子束的精度。该方法和装置涉及用于植入目的的新型磁离子 - 光学传输元件的设计和组合。光学元件的设计成为可能：（1）宽幅调节工件上的带状光束的宽度; （2）纠正带状横梁宽度的强度分布不准确; （3）关于X轴和Y轴的独立转向; （4）工件入射角校正; 和（5）空间费用引起的光束膨胀效应的近似补偿。在实际情况下，这些元件的组合允许源和工件之间的带状光束膨胀到350毫米，具有良好的均匀性和角度精度。此外，该方法和装置可用于沿着光束线引入四极场。

10. 发明授权

US4276477A Focusing apparatus for uniform application of charged particle beam 失效
标题翻译：用于均匀应用带电粒子束的聚焦装置
公开(公告)号：US4276477A
公开(公告)日：1981-06-30
申请号：US76011
申请日：1979-09-17
申请人： Harald A. Enge
发明人： Harald A. Enge
IPC分类号： G21K1/08 , H01J37/147 , H01J37/317 , H01L21/265 , G01K1/08
CPC分类号： G21K1/08 , H01J37/147 , H01J2237/31701
摘要： An apparatus for performing double deflection scanning of charged particle beams utilizes a means for introducing variations in the angle of the charged particle beam in combination with the focal or optical properties of a sector magnet. The means for introducing angular variations receives a charged particle beam and varies the angle of, i.e., deflects, the beam in a plane to define a time modulated fan beam. Once the beam angle is varied the beam is introduced to the gap between the poles of a sector electromagnet operating in a direct current mode. The focal properties of the sector electromagnet translates the time modulated fan beam into a time modulated parallel beam. The parallel beam is double deflected and may be used, for example, as the substrate impinging beam in ion implantation equipment. Multiple sector magnets may be employed for multiple end stations.
摘要翻译：用于进行带电粒子束的双偏转扫描的装置利用一种用于引入带电粒子束的角度的变化与扇形磁体的焦点或光学特性相结合的装置。用于引入角度变化的装置接收带电粒子束并改变在平面中的光束的角度，即偏转角度，以限定时间调制的风扇光束。一旦光束角度变化，光束被引入到以直流模式工作的扇形电磁体的极之间的间隙。扇形电磁铁的焦点属性将时间调制的扇形光束转换为时间调制的并行光束。平行光束是双偏转的，并且可以用作例如离子注入设备中的衬底撞击光束。多个扇区磁体可用于多个终端站。

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