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1. 发明授权

US07301156B2 Controlling the characteristics of implanter ion-beams 有权
标题翻译：控制注入离子束的特性
公开(公告)号：US07301156B2
公开(公告)日：2007-11-27
申请号：US11154085
申请日：2005-06-16
申请人： Kenneth H. Purser , Harald A. Enge , Norman L. Turner
发明人： Kenneth H. Purser , Harald A. Enge , Norman L. Turner
IPC分类号： H01L21/425
CPC分类号： H01J37/141 , H01J37/14 , H01J37/147 , H01J37/1472 , H01J37/153 , H01J37/315 , H01J37/3171 , H01J2237/141 , H01J2237/1534 , H01J2237/31703
摘要： A method and apparatus satisfying growing demands for improving the precision of angle of incidence of implanting ions that impact a semiconductor wafer and the precision of ribbon ion beams for uniform doping of wafers as they pass under an ion beam. The method and apparatus are directed to the design and combination together of novel magnetic ion-optical transport elements for implantation purposes. The design of the optical elements makes possible: (1) Broad-range adjustment of the width of a ribbon beam at the work piece; (2) Correction of inaccuracies in the intensity distribution across the width of a ribbon beam; (3) Independent steering about both X and Y axes; (4) Angle of incidence correction at the work piece; and (5) Approximate compensation for the beam expansion effects arising from space charge. In a practical situation, combinations of the elements allow ribbon beam expansion between source and work piece to 350 millimeter, with good uniformity and angular accuracy. Also, the method and apparatus may be used for introducing quadrupole fields along a beam line.
摘要翻译：一种满足日益增长的要求的方法和装置，用于提高冲击半导体晶片的注入离子入射角的精度以及当离子束通过时晶片的均匀掺杂的带状离子束的精度。该方法和装置涉及用于植入目的的新型磁离子 - 光学传输元件的设计和组合。光学元件的设计成为可能：（1）宽幅调节工件上的带状光束的宽度; （2）纠正带状横梁宽度的强度分布不准确; （3）关于X轴和Y轴的独立转向; （4）工件入射角校正; 和（5）空间费用引起的光束膨胀效应的近似补偿。在实际情况下，这些元件的组合允许源和工件之间的带状光束膨胀到350毫米，具有良好的均匀性和角度精度。此外，该方法和装置可用于沿着光束线引入四极场。

2. 发明授权

US06933507B2 Controlling the characteristics of implanter ion-beams 有权
标题翻译：控制注入离子束的特性
公开(公告)号：US06933507B2
公开(公告)日：2005-08-23
申请号：US10619702
申请日：2003-07-15
申请人： Kenneth H. Purser , Harald A. Enge , Norman L. Turner
发明人： Kenneth H. Purser , Harald A. Enge , Norman L. Turner
IPC分类号： H01J37/141 , H01J37/08 , H01J37/14 , H01J37/147 , H01J37/315 , H01J37/317 , H01L21/425
CPC分类号： H01J37/141 , H01J37/14 , H01J37/147 , H01J37/1472 , H01J37/153 , H01J37/315 , H01J37/3171 , H01J2237/141 , H01J2237/1534 , H01J2237/31703
摘要： A method and apparatus satisfying growing demands for improving the precision of angle of incidence of implanting ions that impact a semiconductor wafer and the precision of ribbon ion beams for uniform doping of wafers as they pass under an ion beam. The method and apparatus are directed to the design and combination together of novel magnetic ion-optical transport elements for implantation purposes. The design of the optical elements makes possible: (1) Broad-range adjustment of the width of a ribbon beam at the work piece; (2) Correction of inaccuracies in the intensity distribution across the width of a ribbon beam; (3) Independent steering about both X and Y axes; (4) Angle of incidence correction at the work piece; and (5) Approximate compensation for the beam expansion effects arising from space charge. In a practical situation, combinations of the elements allow ribbon beam expansion between source and work piece to 350 millimeter, with good uniformity and angular accuracy. Also, the method and apparatus may be used for introducing quadrupole fields along a beam line.
摘要翻译：一种满足日益增长的要求的方法和装置，用于提高冲击半导体晶片的注入离子入射角的精度以及当离子束通过时晶片的均匀掺杂的带状离子束的精度。该方法和装置涉及用于植入目的的新型磁离子 - 光学传输元件的设计和组合。光学元件的设计成为可能：（1）宽幅调节工件上的带状光束的宽度; （2）纠正带状横梁宽度的强度分布不准确; （3）关于X轴和Y轴的独立转向; （4）工件入射角校正; 和（5）空间费用引起的光束膨胀效应的近似补偿。在实际情况下，这些元件的组合允许源和工件之间的带状光束膨胀到350毫米，具有良好的均匀性和角度精度。此外，该方法和装置可用于沿着光束线引入四极场。

3. 发明授权

US07888660B2 Controlling the characteristics of implanter ion-beams 有权
标题翻译：控制注入离子束的特性
公开(公告)号：US07888660B2
公开(公告)日：2011-02-15
申请号：US11341838
申请日：2006-01-27
申请人： Kenneth H. Purser , Harald A. Enge , Norman L. Turner
发明人： Kenneth H. Purser , Harald A. Enge , Norman L. Turner
IPC分类号： G21K5/04
CPC分类号： H01J37/141 , H01J37/14 , H01J37/147 , H01J37/1472 , H01J37/153 , H01J37/315 , H01J37/3171 , H01J2237/141 , H01J2237/1534 , H01J2237/31703
摘要： A method and apparatus satisfying growing demands for improving the precision of angle of incidence of implanting ions that impact a semiconductor wafer and the precision of ribbon ion beams for uniform doping of wafers as they pass under an ion beam. The method and apparatus are directed to the design and combination together of novel magnetic ion-optical transport elements for implantation purposes. The design of the optical elements makes possible: (1) Broad-range adjustment of the width of a ribbon beam at the work piece; (2) Correction of inaccuracies in the intensity distribution across the width of a ribbon beam; (3) Independent steering about both X and Y axes; (4) Angle of incidence correction at the work piece; and (5) Approximate compensation for the beam expansion effects arising from space charge. In a practical situation, combinations of the elements allow ribbon beam expansion between source and work piece to 350 millimeter, with good uniformity and angular accuracy. Also, the method and apparatus may be used for introducing quadrupole fields along a beam line.
摘要翻译：一种满足日益增长的要求的方法和装置，用于提高冲击半导体晶片的注入离子入射角的精度以及当离子束通过时晶片的均匀掺杂的带状离子束的精度。该方法和装置涉及用于植入目的的新型磁离子 - 光学传输元件的设计和组合。光学元件的设计成为可能：（1）宽幅调节工件上的带状光束的宽度; （2）纠正带状横梁宽度的强度分布不准确; （3）关于X轴和Y轴的独立转向; （4）工件入射角校正; 和（5）空间费用引起的光束膨胀效应的近似补偿。在实际情况下，这些元件的组合允许源和工件之间的带状光束膨胀到350毫米，具有良好的均匀性和角度精度。此外，该方法和装置可用于沿着光束线引入四极场。

4. 发明授权

US07897943B2 Controlling the characteristics of implanter ion-beams 有权
公开(公告)号：US07897943B2
公开(公告)日：2011-03-01
申请号：US11341839
申请日：2006-01-27
申请人： Kenneth H. Purser , Harald A. Enge , Norman L. Turner
发明人： Kenneth H. Purser , Harald A. Enge , Norman L. Turner
IPC分类号： G21K5/04
CPC分类号： H01J37/141 , H01J37/14 , H01J37/147 , H01J37/1472 , H01J37/153 , H01J37/315 , H01J37/3171 , H01J2237/141 , H01J2237/1534 , H01J2237/31703
摘要： A method and apparatus satisfying growing demands for improving the precision of angle of incidence of implanting ions that impact a semiconductor wafer and the precision of ribbon ion beams for uniform doping of wafers as they pass under an ion beam. The method and apparatus are directed to the design and combination together of novel magnetic ion-optical transport elements for implantation purposes. The design of the optical elements makes possible: (1) Broad-range adjustment of the width of a ribbon beam at the work piece; (2) Correction of inaccuracies in the intensity distribution across the width of a ribbon beam; (3) Independent steering about both X and Y axes; (4) Angle of incidence correction at the work piece; and (5) Approximate compensation for the beam expansion effects arising from space charge. In a practical situation, combinations of the elements allow ribbon beam expansion between source and work piece to 350 millimeter, with good uniformity and angular accuracy. Also, the method and apparatus may be used for introducing quadrupole fields along a beam line.

5. 发明授权

US07351984B2 Controlling the characteristics of implanter ion-beams 有权
标题翻译：控制注入离子束的特性
公开(公告)号：US07351984B2
公开(公告)日：2008-04-01
申请号：US11784073
申请日：2007-04-05
申请人： Kenneth H. Purser , Harald A. Enge , Norman L. Turner
发明人： Kenneth H. Purser , Harald A. Enge , Norman L. Turner
IPC分类号： H01J21/425
CPC分类号： H01J37/141 , H01J37/14 , H01J37/147 , H01J37/1472 , H01J37/153 , H01J37/315 , H01J37/3171 , H01J2237/141 , H01J2237/1534 , H01J2237/31703
摘要： A method and apparatus satisfying growing demands for improving the precision of angle of incidence of implanting ions that impact a semiconductor wafer and the precision of ribbon ion beams for uniform doping of wafers as they pass under an ion beam. The method and apparatus are directed to the design and combination together of novel magnetic ion-optical transport elements for implantation purposes. The design of the optical elements makes possible: (1) Broad-range adjustment of the width of a ribbon beam at the work piece; (2) Correction of inaccuracies in the intensity distribution across the width of a ribbon beam; (3) Independent steering about both X and Y axes; (4) Angle of incidence correction at the work piece; and (5) Approximate compensation for the beam expansion effects arising from space charge. In a practical situation, combinations of the elements allow ribbon beam expansion between source and work piece to 350 millimeter, with good uniformity and angular accuracy. Also, the method and apparatus may be used for introducing quadrupole fields along a beam line.
摘要翻译：一种满足日益增长的要求的方法和装置，用于提高冲击半导体晶片的注入离子入射角的精度以及当离子束通过时晶片的均匀掺杂的带状离子束的精度。该方法和装置涉及用于植入目的的新型磁离子 - 光学传输元件的设计和组合。光学元件的设计成为可能：（1）宽幅调节工件上的带状光束的宽度; （2）纠正带状横梁宽度的强度分布不准确; （3）关于X轴和Y轴的独立转向; （4）工件入射角校正; 和（5）空间费用引起的光束膨胀效应的近似补偿。在实际情况下，这些元件的组合允许源和工件之间的带状光束膨胀到350毫米，具有良好的均匀性和角度精度。此外，该方法和装置可用于沿着光束线引入四极场。

6. 发明授权

US07439526B2 Beam neutralization in low-energy high-current ribbon-beam implanters 有权
标题翻译：在低能量大电流带状束注入机中的束中和
公开(公告)号：US07439526B2
公开(公告)日：2008-10-21
申请号：US11312055
申请日：2005-12-20
申请人： Kenneth H. Purser , Norman L. Turner
发明人： Kenneth H. Purser , Norman L. Turner
IPC分类号： H01J37/317
CPC分类号： H01J37/3171 , H01J2237/0042 , H01J2237/055 , H01J2237/057
摘要： The fabrication of modern semiconducting integrated circuits often requires implantation steps that involve high currents of low-energy charged dopant atoms. When employing such beams, the addition of electrons or negative ions for neutralizing the effects of space charge is often crucial for achieving success. Without this supplement, ion beams can ‘blow-up’ causing loss of intensity and disruption of beam focusing. In the present disclosure, methods are presented for introducing and constraining neutralizing low-energy electrons and negative ions within the boundaries of ribbon beams within regions of magnetic field deflection. Apparatus is described for maintaining neutralization based upon a reduction of electron losses, plasma bridge connections and secondary electron production. As part of plasma introduction to the deflection region a novel cryogenic pumping apparatus selectively removes neutral atoms from a plasma stream.
摘要翻译：现代半导体集成电路的制造通常需要涉及高电流的低能带电掺杂原子的注入步骤。当使用这种光束时，添加电子或负离子来中和空间电荷的作用对于获得成功往往是至关重要的。没有这个补充，离子束可以“爆炸”，导致强度的损失和光束聚焦的破坏。在本公开中，提出了用于在磁场偏转区域内的带状束的边界内引入和约束中和低能电子和负离子的方法。描述了用于基于电子损耗，等离子体桥连接和二次电子产生的减少来维持中和的装置。作为等离子体引入偏转区域的一部分，新型的低温泵送装置选择性地从等离子体流中除去中性原子。

7. 发明授权

US07365340B2 Resonance method for production of intense low-impurity ion beams of atoms and molecules 有权
标题翻译：用于生成原子和分子强度低杂质离子束的共振方法
公开(公告)号：US07365340B2
公开(公告)日：2008-04-29
申请号：US11185141
申请日：2005-07-20
申请人： Kenneth H. Purser , Albert E. Litherland , Norman L. Turner
发明人： Kenneth H. Purser , Albert E. Litherland , Norman L. Turner
IPC分类号： H01J7/24
CPC分类号： H01J37/08 , H01J37/3171 , H01J49/145 , H01J2237/0815 , H01J2237/31705 , H05H3/02
摘要： The present invention comprehends a compact and economical apparatus for producing high intensities of a wide variety of wanted positive and negative molecular and atomic ion beams that have been previously impossible to previously produce at useful intensities. In addition, the invention provides a substantial rejection of companion background ions that are frequently simultaneously emitted with the wanted ions. The principle underlying the present invention is resonance ionization-transfer where energy differences between resonant and non-resonant processes are exploited to enhance or attenuate particular charge-changing processes. This new source technique is relevant to the fields of Accelerator Mass Spectroscopy; Molecular Ion Implantation; Generation of Directed Neutral Beams; and Production of Electrons required for Ion Beam Neutralization within magnetic fields. An example having commercial importance is ionization of the decaborane molecule, B10H14 where an almost perfect ionization resonance match occurs between decaborane molecules and arsenic atoms.
摘要翻译：本发明包括一种紧凑且经济的装置，用于产生以前不可能以有用强度预先产生的各种各样的所需正，负分子和原子离子束的强度。此外，本发明提供了与所需离子频繁同时发射的伴随背景离子的显着排除。本发明的基本原理是谐振电离转移，其中利用共振和非共振过程之间的能量差异来增强或减弱特定的电荷变化过程。这种新的源技术与加速器质谱技术相关; 分子离子注入定向中性梁的生成和磁场中离子束中和所需的电子的生产。具有商业重要性的实例是十硼烷分子的电离，其中在十硼烷分子和砷原子之间发生几乎完美的电离谐振匹配的B 10 H 14 N 14。

8. 发明授权

US07414249B2 Broad energy-range ribbon ion beam collimation using a variable-gradient dipole 失效
公开(公告)号：US07414249B2
公开(公告)日：2008-08-19
申请号：US11289863
申请日：2005-11-30
申请人： Kenneth H. Purser , Norman L. Turner
发明人： Kenneth H. Purser , Norman L. Turner
IPC分类号： H01J3/20 , H01J37/14
CPC分类号： H01J37/05 , H01J37/1472 , H01J37/3171 , H01J2237/055 , H01J2237/057 , H01J2237/152 , H01J2237/31701
摘要： A method and apparatus satisfying growing demands for improving the intensity of implanting ions that impact a semiconductor wafer as it passes under an ion beam. The method and apparatus are directed to the design and combination together of novel magnetic ion-optical transport elements for implantation purposes for combating the disruptive effects of ion-beam induced space-charge forces. The design of the novel optical elements makes possible: (1) Focusing of a ribbon ion beam as the beam passes through uniform or non-uniform magnetic fields; (2) Reduction of the losses of ions comprising a d.c. ribbon beam to the magnetic poles when a ribbon beam is deflected by a magnetic field.

9. 发明授权

US07829866B2 Broad energy-range ribbon ion beam collimation using a variable-gradient dipole 失效
标题翻译：使用可变梯度偶极子的宽能谱带状离子束准直
公开(公告)号：US07829866B2
公开(公告)日：2010-11-09
申请号：US12228473
申请日：2008-08-13
申请人： Kenneth H. Purser , Norman L. Turner
发明人： Kenneth H. Purser , Norman L. Turner
IPC分类号： H01J3/20
CPC分类号： H01J37/05 , H01J37/1472 , H01J37/3171 , H01J2237/055 , H01J2237/057 , H01J2237/152 , H01J2237/31701
摘要： A method and apparatus satisfying growing demands for improving the intensity of implanting ions that impact a semiconductor wafer as it passes under an ion beam. The method and apparatus are directed to the design and combination together of novel magnetic ion-optical transport elements for implantation purposes for combating the disruptive effects of ion-beam induced space-charge forces. The design of the novel optical elements makes possible: (1) Focusing of a ribbon ion beam as the beam passes through uniform or non-uniform magnetic fields; (2) Reduction of the losses of ions comprising a d.c. ribbon beam to the magnetic poles when a ribbon beam is deflected by a magnetic field.
摘要翻译：一种满足日益增长的要求的方法和装置，其用于提高在半导体晶片通过离子束时冲击半导体晶片的注入离子的强度。该方法和装置涉及用于植入目的的新型磁离子 - 光学传输元件的设计和组合在一起，以抵抗离子束诱导的空间电荷力的破坏性影响。新型光学元件的设计成为可能：（1）当光束通过均匀或不均匀的磁场时，对带状离子束进行聚焦; （2）减少包含直流电的离子的损失。当带状光束被磁场偏转时，带状光束到达磁极。

10. 发明授权

US4775796A Treating workpieces with beams 失效
标题翻译：用梁处理工件
公开(公告)号：US4775796A
公开(公告)日：1988-10-04
申请号：US000703
申请日：1987-01-06
申请人： Kenneth H. Purser , Norman L. Turner
发明人： Kenneth H. Purser , Norman L. Turner
IPC分类号： H01J37/317 , H01L21/265 , G01N23/00 , A61K27/02
CPC分类号： H01J37/3171
摘要： A dose monitoring system for ion implantation devices which employ a moving support element such as a spinning support disk which is moved through an ion beam by a scan motion uses a pick-up plate on the spinning support disk to measure incremental dose and to generate a signal which is used to vary the scan motion of the spinning support disk in order to control dosage.
摘要翻译：一种用于离子注入装置的剂量监测系统，其使用诸如通过扫描运动通过离子束移动的旋转支撑盘的移动支撑元件，使用旋转支撑盘上的拾取板来测量增量剂量并产生信号，其用于改变旋转支撑盘的扫描运动以便控制剂量。

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