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    • 6. 发明授权
    • Controlling the characteristics of implanter ion-beams
    • 控制注入离子束的特性
    • US07888660B2
    • 2011-02-15
    • US11341838
    • 2006-01-27
    • Kenneth H. PurserHarald A. EngeNorman L. Turner
    • Kenneth H. PurserHarald A. EngeNorman L. Turner
    • G21K5/04
    • H01J37/141H01J37/14H01J37/147H01J37/1472H01J37/153H01J37/315H01J37/3171H01J2237/141H01J2237/1534H01J2237/31703
    • A method and apparatus satisfying growing demands for improving the precision of angle of incidence of implanting ions that impact a semiconductor wafer and the precision of ribbon ion beams for uniform doping of wafers as they pass under an ion beam. The method and apparatus are directed to the design and combination together of novel magnetic ion-optical transport elements for implantation purposes. The design of the optical elements makes possible: (1) Broad-range adjustment of the width of a ribbon beam at the work piece; (2) Correction of inaccuracies in the intensity distribution across the width of a ribbon beam; (3) Independent steering about both X and Y axes; (4) Angle of incidence correction at the work piece; and (5) Approximate compensation for the beam expansion effects arising from space charge. In a practical situation, combinations of the elements allow ribbon beam expansion between source and work piece to 350 millimeter, with good uniformity and angular accuracy. Also, the method and apparatus may be used for introducing quadrupole fields along a beam line.
    • 一种满足日益增长的要求的方法和装置,用于提高冲击半导体晶片的注入离子入射角的精度以及当离子束通过时晶片的均匀掺杂的带状离子束的精度。 该方法和装置涉及用于植入目的的新型磁离子 - 光学传输元件的设计和组合。 光学元件的设计成为可能:(1)宽幅调节工件上的带状光束的宽度; (2)纠正带状横梁宽度的强度分布不准确; (3)关于X轴和Y轴的独立转向; (4)工件入射角校正; 和(5)空间费用引起的光束膨胀效应的近似补偿。 在实际情况下,这些元件的组合允许源和工件之间的带状光束膨胀到350毫米,具有良好的均匀性和角度精度。 此外,该方法和装置可用于沿着光束线引入四极场。
    • 8. 发明申请
    • Controlling the characteristics of implanter ion-beams
    • 控制注入离子束的特性
    • US20060169924A1
    • 2006-08-03
    • US11341839
    • 2006-01-27
    • Kenneth PurserHarald EngeNorman Turner
    • Kenneth PurserHarald EngeNorman Turner
    • H01J37/08
    • H01J37/141H01J37/14H01J37/147H01J37/1472H01J37/153H01J37/315H01J37/3171H01J2237/141H01J2237/1534H01J2237/31703
    • A method and apparatus satisfying growing demands for improving the precision of angle of incidence of implanting ions that impact a semiconductor wafer and the precision of ribbon ion beams for uniform doping of wafers as they pass under an ion beam. The method and apparatus are directed to the design and combination together of novel magnetic ion-optical transport elements for implantation purposes. The design of the optical elements makes possible: (1) Broad-range adjustment of the width of a ribbon beam at the work piece; (2) Correction of inaccuracies in the intensity distribution across the width of a ribbon beam; (3) Independent steering about both X and Y axes; (4) Angle of incidence correction at the work piece; and (5) Approximate compensation for the beam expansion effects arising from space charge. In a practical situation, combinations of the elements allow ribbon beam expansion between source and work piece to 350 millimeter, with good uniformity and angular accuracy. Also, the method and apparatus may be used for introducing quadrupole fields along a beam line.
    • 一种满足日益增长的要求的方法和装置,用于提高冲击半导体晶片的注入离子入射角的精度以及当离子束通过时晶片的均匀掺杂的带状离子束的精度。 该方法和装置涉及用于植入目的的新型磁离子 - 光学传输元件的设计和组合。 光学元件的设计成为可能:(1)宽幅调节工件上的带状光束的宽度; (2)纠正带状横梁宽度的强度分布不准确; (3)关于X轴和Y轴的独立转向; (4)工件入射角校正; 和(5)空间费用引起的光束膨胀效应的近似补偿。 在实际情况下,这些元件的组合允许源和工件之间的带状光束膨胀到350毫米,具有良好的均匀性和角度精度。 此外,该方法和装置可用于沿着光束线引入四极场。