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1. 发明申请

US20120205652A1 THIN FILM, METHOD OF FORMING THE SAME, AND SEMICONDUCTOR LIGHT-EMITTING ELEMENT COMPRISING THE THIN FILM 有权
标题翻译：薄膜，其形成方法和包含薄膜的半导体发光元件
公开(公告)号：US20120205652A1
公开(公告)日：2012-08-16
申请号：US13500931
申请日：2010-10-07
申请人： Tadahiro Ohmi , Hirokazu Asahara , Atsutoshi Inokuchi
发明人： Tadahiro Ohmi , Hirokazu Asahara , Atsutoshi Inokuchi
IPC分类号： H01L21/365 , H01L33/28
CPC分类号： C23C16/407 , C23C16/308 , C23C16/40 , C23C16/56 , H01L21/0242 , H01L21/02422 , H01L21/02472 , H01L21/02554 , H01L21/02565 , H01L21/02576 , H01L21/0262 , H01L33/0087 , H01L33/28
摘要： It is an object of the present invention to stably form an N-doped ZnO-based compound thin film. In the present invention, a gas containing oxygen and nitrogen and a nitrogen gas together with an organometallic material gas are supplied into a low-electron-temperature high-density plasma which is excited by microwave, thereby forming the N-doped ZnO-based compound thin film on a substrate as a film forming object.
摘要翻译：本发明的目的是稳定地形成N掺杂的ZnO基化合物薄膜。在本发明中，将含有氮气和氮气的气体与有机金属材料气体一起供给到由微波激发的低电子温度的高密度等离子体中，由此形成N掺杂的ZnO类化合物作为成膜体的基板上的薄膜。

2. 发明授权

US08188468B2 Compound-type thin film, method of forming the same, and electronic device using the same 有权
标题翻译：复合型薄膜，其形成方法和使用该薄膜的电子器件
公开(公告)号：US08188468B2
公开(公告)日：2012-05-29
申请号：US12601684
申请日：2008-05-02
申请人： Tadahiro Ohmi , Hirokazu Asahara , Atsutoshi Inokuchi , Kohei Watanuki
发明人： Tadahiro Ohmi , Hirokazu Asahara , Atsutoshi Inokuchi , Kohei Watanuki
IPC分类号： H01L21/00
CPC分类号： C23C16/511 , C23C16/18 , C23C16/45565 , H01L21/0242 , H01L21/02422 , H01L21/02458 , H01L21/02472 , H01L21/0254 , H01L21/02554 , H01L21/02565 , H01L21/0262 , H01L29/7869 , H01L31/1804 , H01L31/1828 , H01L31/184 , H01L31/1884 , H01L31/206 , H01L33/0066 , H01L33/0087 , H01L33/02 , H01L2924/0002 , Y02E10/543 , Y02E10/544 , Y02E10/547 , Y02P70/521 , H01L2924/00
摘要： An organometal material gas is supplied into a low electron temperature and high density plasma excited by microwaves to form a thin film of a compound on a substrate as a film forming object. In this case, the temperature of a supply system for the organometal material gas is controlled by taking advantage of the relationship between the vapor pressure and temperature of the organometal material gas.
摘要翻译：将有机金属材料气体供给到由微波激发的低电子温度和高密度等离子体中，以形成作为成膜体的基板上的化合物的薄膜。在这种情况下，通过利用有机金属材料气体的蒸汽压力和温度之间的关系来控制有机金属材料气体的供给系统的温度。

3. 发明申请

US20100139762A1 COMPOUND-TYPE THIN FILM, METHOD OF FORMING THE SAME, AND ELECTRONIC DEVICE USING THE SAME 有权
标题翻译：化合物薄膜，其形成方法和使用该薄膜的电子设备
公开(公告)号：US20100139762A1
公开(公告)日：2010-06-10
申请号：US12601684
申请日：2008-05-02
申请人： Tadahiro Ohmi , Hirokazu Asahara , Atsutoshi Inokuchi , Kohei Watanuki
发明人： Tadahiro Ohmi , Hirokazu Asahara , Atsutoshi Inokuchi , Kohei Watanuki
IPC分类号： H01L31/04 , C23C16/513 , B32B9/04 , C30B25/02
CPC分类号： C23C16/511 , C23C16/18 , C23C16/45565 , H01L21/0242 , H01L21/02422 , H01L21/02458 , H01L21/02472 , H01L21/0254 , H01L21/02554 , H01L21/02565 , H01L21/0262 , H01L29/7869 , H01L31/1804 , H01L31/1828 , H01L31/184 , H01L31/1884 , H01L31/206 , H01L33/0066 , H01L33/0087 , H01L33/02 , H01L2924/0002 , Y02E10/543 , Y02E10/544 , Y02E10/547 , Y02P70/521 , H01L2924/00
摘要： An organometal material gas is supplied into a low electron temperature and high density plasma excited by microwaves to form a thin film of a compound on a substrate as a film forming object. In this case, the temperature of a supply system for the organometal material gas is controlled by taking advantage of the relationship between the vapor pressure and temperature of the organometal material gas.
摘要翻译：将有机金属材料气体供给到由微波激发的低电子温度和高密度等离子体中，以形成作为成膜体的基板上的化合物的薄膜。在这种情况下，通过利用有机金属材料气体的蒸汽压力和温度之间的关系来控制有机金属材料气体的供给系统的温度。

4. 发明授权

US08592810B2 Thin film, method of forming the same, and semiconductor light-emitting element comprising the thin film 有权
标题翻译：薄膜，其形成方法以及包含该薄膜的半导体发光元件
公开(公告)号：US08592810B2
公开(公告)日：2013-11-26
申请号：US13500931
申请日：2010-10-07
申请人： Tadahiro Ohmi , Hirokazu Asahara , Atsutoshi Inokuchi
发明人： Tadahiro Ohmi , Hirokazu Asahara , Atsutoshi Inokuchi
IPC分类号： H01L21/365
CPC分类号： C23C16/407 , C23C16/308 , C23C16/40 , C23C16/56 , H01L21/0242 , H01L21/02422 , H01L21/02472 , H01L21/02554 , H01L21/02565 , H01L21/02576 , H01L21/0262 , H01L33/0087 , H01L33/28
摘要： It is an object of the present invention to stably form an N-doped ZnO-based compound thin film. In the present invention, a gas containing oxygen and nitrogen and a nitrogen gas together with an organometallic material gas are supplied into a low-electron-temperature high-density plasma which is excited by microwave, thereby forming the N-doped ZnO-based compound thin film on a substrate as a film forming object.
摘要翻译：本发明的目的是稳定地形成N掺杂的ZnO基化合物薄膜。在本发明中，将含有氮气和氮气的气体与有机金属材料气体一起供给到由微波激发的低电子温度的高密度等离子体中，由此形成N掺杂的ZnO类化合物作为成膜体的基板上的薄膜。

5. 发明授权

US07375380B2 Semiconductor light emitting device 有权
标题翻译：半导体发光器件
公开(公告)号：US07375380B2
公开(公告)日：2008-05-20
申请号：US10551922
申请日：2005-07-11
申请人： Hirokazu Asahara , Mitsuhiko Sakai , Masayuki Sonobe , Toshio Nishida
发明人： Hirokazu Asahara , Mitsuhiko Sakai , Masayuki Sonobe , Toshio Nishida
IPC分类号： H01L27/15 , H01L29/22
CPC分类号： H01L33/42 , H01L33/22 , H01L33/405 , H01L33/44 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor light emitting device includes a semiconductor light emitting portion having a first contact layer of a first conductivity, a second contact layer of a second conductivity and an active layer sandwiched between the first and second contact layers. The device further includes a transparent electrode which substantially entirely covers a surface of the second contact layer in ohmic contact with the surface of the second contact layer and is transparent to a wavelength of light emitted from the semiconductor light emitting portion, and a metal reflection film which is opposed to substantially the entire surface of the transparent electrode and electrically connected to the transparent electrode, and reflects the light emitted from the semiconductor light emitting portion and passing through the transparent electrode toward the semiconductor light emitting portion.
摘要翻译：半导体发光器件包括具有第一导电性的第一接触层，第二导电性的第二接触层和夹在第一和第二接触层之间的有源层的半导体发光部。该装置还包括透明电极，其基本上完全覆盖第二接触层的与第二接触层的表面欧姆接触的表面，并且对于从半导体发光部分发射的光的波长是透明的，并且金属反射膜其与透明电极的大致整个表面相对并且电连接到透明电极，并且反射从半导体发光部分发射的光并且透过透明电极朝向半导体发光部分。

6. 发明申请

US20120037407A1 Electronic Apparatus and Method of Manufacturing the Same 审中-公开
标题翻译：电子仪器及其制造方法
公开(公告)号：US20120037407A1
公开(公告)日：2012-02-16
申请号：US13266269
申请日：2010-04-10
申请人： Tadahiro Ohmi , Hirokazu Asahara , Kohei Watanuki , Kouji Tanaka
发明人： Tadahiro Ohmi , Hirokazu Asahara , Kohei Watanuki , Kouji Tanaka
IPC分类号： H05K1/03 , C23C16/50 , B32B17/06 , C23C16/40
CPC分类号： H01L31/1884 , H01L31/022483 , H01L31/075 , Y02E10/548
摘要： It has been found out that, among transparent conductive layers, a zinc oxide layer has a function of preventing diffusion of sodium. An electronic apparatus is obtained which uses the zinc oxide layer as an electrode of the electronic apparatus and also as a diffusion preventing layer for preventing diffusion of sodium from a glass substrate.
摘要翻译：已经发现，在透明导电层中，氧化锌层具有防止钠扩散的功能。获得使用氧化锌层作为电子设备的电极的电子设备，并且还用作防止钠从玻璃基板扩散的扩散防止层。

7. 发明申请

US20070102692A1 Semiconductor light emitting device 审中-公开
标题翻译：半导体发光器件
公开(公告)号：US20070102692A1
公开(公告)日：2007-05-10
申请号：US10551918
申请日：2005-07-11
申请人： Hirokazu Asahara , Mitsuhiko Sakai , Toshio Nishida , Masayuki Sonobe
发明人： Hirokazu Asahara , Mitsuhiko Sakai , Toshio Nishida , Masayuki Sonobe
IPC分类号： H01L29/06
CPC分类号： H01L33/387
摘要： A semiconductor light emitting device includes a semiconductor light emitting portion, a front surface electrode provided on one side of the semiconductor light emitting portion, an electrically conductive substrate provided on the other side of the semiconductor light emitting portion, the electrically conductive substrate being transparent to a wavelength of light emitted from the semiconductor light emitting portion, a rear surface electrode having a pattern in ohmic contact with a first region of a back surface of the electrically conductive substrate opposite from the semiconductor light emitting portion, and a rear surface insulation layer covering a second region of the back surface of the electrically conductive substrate other than the first region, the rear surface insulation layer being transparent to the wavelength of the light emitted from the semiconductor light emitting portion.
摘要翻译：半导体发光器件包括半导体发光部分，设置在半导体发光部分一侧的前表面电极，设置在半导体发光部分另一侧的导电基片，导电基片对从半导体发光部发射的光的波长，与导电性基板的与半导体发光部相反的背面的第一区域欧姆接触的图案的背面电极，以及背面绝缘层覆盖所述导电基板的除了所述第一区域以外的所述背面的第二区域，所述背面绝缘层对于从所述半导体发光部发出的光的波长透明。

8. 发明申请

US20060273335A1 Semiconductor light emitting device 有权
标题翻译：半导体发光器件
公开(公告)号：US20060273335A1
公开(公告)日：2006-12-07
申请号：US10551922
申请日：2005-07-11
申请人： Hirokazu Asahara , Mitsuhiko Sakai , Masayuki Sonobe , Toshio Nishida
发明人： Hirokazu Asahara , Mitsuhiko Sakai , Masayuki Sonobe , Toshio Nishida
IPC分类号： H01L33/00
CPC分类号： H01L33/42 , H01L33/22 , H01L33/405 , H01L33/44 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor light emitting device includes a semiconductor light emitting portion having a first contact layer of a first conductivity, a second contact layer of a second conductivity and an active layer sandwiched between the first and second contact layers. The device further includes a transparent electrode which substantially entirely covers a surface of the second contact layer in ohmic contact with the surface of the second contact layer and is transparent to a wavelength of light emitted from the semiconductor light emitting portion, and a metal reflection film which is opposed to substantially the entire surface of the transparent electrode and electrically connected to the transparent electrode, and reflects the light emitted from the semiconductor light emitting portion and passing through the transparent electrode toward the semiconductor light emitting portion.
摘要翻译：半导体发光器件包括具有第一导电性的第一接触层，第二导电性的第二接触层和夹在第一和第二接触层之间的有源层的半导体发光部。该装置还包括透明电极，其基本上完全覆盖第二接触层的与第二接触层的表面欧姆接触的表面，并且对于从半导体发光部分发射的光的波长是透明的，并且金属反射膜其与透明电极的大致整个表面相对并且电连接到透明电极，并且反射从半导体发光部分发射的光并且透过透明电极朝向半导体发光部分。

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