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1. 发明授权

US08715415B2 Vitreous silica crucible for pulling silicon single crystal 有权
标题翻译：硅玻璃坩埚用于拉硅单晶
公开(公告)号：US08715415B2
公开(公告)日：2014-05-06
申请号：US12752374
申请日：2010-04-01
申请人： Makiko Kodama , Hiroshi Kishi , Minoru Kanda
发明人： Makiko Kodama , Hiroshi Kishi , Minoru Kanda
IPC分类号： C30B15/10
CPC分类号： C30B15/10 , C30B29/06 , C30B35/002
摘要： Provided is a vitreous silica crucible for pulling silicon single crystals, which can melt a silicon raw material in a short time and improve production yield of silicon single crystals by temporal change of an opaque vitreous silica layer. The vitreous silica crucible includes an opaque vitreous silica layer(11) provided on an outer surface thereof and containing plural bubbles, and a transparent vitreous silica layer(12) provided on an inner surface and not containing bubbles substantially. The opaque vitreous silica layer(11) has a bubble diameter distribution in which the content of bubbles having a diameter of less than 40 μm is 10% or more and less than 30%, the content of bubbles having a diameter of 40 μm or more and less than 90 μm is 40% or more and less than 80%, and the content of bubbles having a diameter equal to or more than 90 μm is 10% or more and less than 30%. Relatively small bubbles contained in the opaque vitreous silica layer(11) contribute to the thermal conductivity of a crucible at an initial pulling stage, and relatively large bubbles contained in the opaque vitreous silica layer are expanded through a long-term pulling process to thereby largely contribute to the warmth retaining property of the crucible at a later pulling stage.
摘要翻译：本发明提供一种用于拉伸硅单晶的石英玻璃坩埚，其可以在短时间内熔化硅原料，并且通过不透明氧化硅玻璃层的时间变化提高硅单晶的产率。石英玻璃坩埚包括设置在其外表面并且包含多个气泡的不透明玻璃状石英层（11），以及设置在内表面上且基本上不含有气泡的透明玻璃状石英层（12）。不透明玻璃状石英层（11）具有气泡直径分布，其中直径小于40μm的气泡的含量为10％以上且小于30％，气泡的直径为40μm以上小于90μm的是40％以上且小于80％，直径等于或大于90μm的气泡的含量为10％以上且小于30％。包含在不透明玻璃状二氧化硅层（11）中的相对小的气泡有助于在初始拉伸阶段的坩埚的导热性，并且通过长期拉伸工艺使包含在不透明玻璃状二氧化硅层中的相对大的气泡膨胀，从而大大地扩大有助于在稍后的拉动阶段坩埚的保温性能。

2. 发明授权

US08704629B2 Coil-type electronic component and its manufacturing method 有权
标题翻译：线圈型电子元件及其制造方法
公开(公告)号：US08704629B2
公开(公告)日：2014-04-22
申请号：US13348926
申请日：2012-01-12
申请人： Hideki Ogawa , Atsushi Tanada , Hitoshi Matsuura , Kiyoshi Tanaka , Hiroshi Kishi , Kenji Kawano
发明人： Hideki Ogawa , Atsushi Tanada , Hitoshi Matsuura , Kiyoshi Tanaka , Hiroshi Kishi , Kenji Kawano
IPC分类号： H01F27/24 , H01F27/02 , H01F5/00 , H01F17/04 , H01F7/06
CPC分类号： H01F1/22 , B22F2998/00 , C22C1/02 , C22C2202/02 , H01F1/12 , H01F1/14766 , H01F1/24 , H01F1/26 , H01F1/33 , H01F5/02 , H01F5/06 , H01F41/02 , H01F41/0246 , H01F41/098 , H01F41/10 , H01F41/125 , Y10T29/4902 , Y10T29/49069 , Y10T29/49071 , Y10T29/49073 , Y10T29/49144 , C22C33/0278
摘要： A coil-type electronic component has a coil inside or on the surface of its base material and is characterized in that: the base material is constituted by a group of grains of a soft magnetic alloy containing iron, silicon and other element that oxidizes more easily than iron; the surface of each soft magnetic alloy grain has an oxide layer formed on its surface as a result of oxidization of the grain; this oxide layer contains the other element that oxidizes more easily than iron by a quantity larger than that in the soft magnetic alloy grain; and grains are bonded with one another via this oxide layer.
摘要翻译：线圈型电子部件在其基材的内侧或表面上具有线圈，其特征在于，所述基材由包含铁，硅等元素的软磁性合金的晶粒组构成，能够更容易地氧化比铁每个软磁合金颗粒的表面由于晶粒的氧化而在其表面上形成氧化层; 该氧化物层含有比铁更容易氧化的量比软磁性合金粒子大的量的另一种元素; 并且晶粒经由该氧化物层彼此结合。

3. 发明申请

US20130200970A1 COIL-TYPE ELECTRONIC COMPONENT AND PROCESS FOR PRODUCING SAME 有权
标题翻译：线圈型电子元件及其制造方法
公开(公告)号：US20130200970A1
公开(公告)日：2013-08-08
申请号：US13642467
申请日：2011-04-26
申请人： Hideki Ogawa , Atsushi Tanada , Hitoshi Matsuura , Kiyoshi Tanaka , Hiroshi Kishi , Kenji Kawano
发明人： Hideki Ogawa , Atsushi Tanada , Hitoshi Matsuura , Kiyoshi Tanaka , Hiroshi Kishi , Kenji Kawano
IPC分类号： H01F1/33 , H01F41/02
CPC分类号： H01F1/22 , B22F2998/00 , C22C1/02 , C22C2202/02 , H01F1/12 , H01F1/14766 , H01F1/24 , H01F1/26 , H01F1/33 , H01F5/02 , H01F5/06 , H01F41/02 , H01F41/0246 , H01F41/098 , H01F41/10 , H01F41/125 , Y10T29/4902 , Y10T29/49069 , Y10T29/49071 , Y10T29/49073 , Y10T29/49144 , C22C33/0278
摘要： A coil-type electronic component has a coil inside or on the surface of its base material wherein the base material in the coil-type electronic component is constituted by a group of grains of a soft magnetic alloy containing iron, silicon and other element that oxidizes more easily than iron; the surface of each soft magnetic alloy grain has an oxide layer formed on its surface as a result of oxidization of the grain; this oxide layer contains the other element that oxidizes more easily than iron by a quantity larger than that in the soft magnetic alloy grain; and grains are bonded with one another via this oxide layer. The coil-type electronic component can be produced at low cost and combines high magnetic permeability with high saturation magnetic flux density.
摘要翻译：线圈型电子部件在其基材的内部或表面上具有线圈，其中线圈型电子部件中的基材由包含铁，硅和其它元素的软磁合金的晶粒组成比铁更容易每个软磁合金颗粒的表面由于晶粒的氧化而在其表面上形成氧化层; 该氧化物层含有比铁更容易氧化的量比软磁性合金粒子大的量的另一种元素; 并且晶粒经由该氧化物层彼此结合。线圈型电子部件可以低成本地生产，并且具有高磁导率和高饱和磁通密度。

4. 发明授权

US08449676B2 Silica glass crucible 有权
标题翻译：二氧化硅玻璃坩埚
公开(公告)号：US08449676B2
公开(公告)日：2013-05-28
申请号：US12430311
申请日：2009-04-27
申请人： Masanori Fukui , Hiroshi Kishi
发明人： Masanori Fukui , Hiroshi Kishi
IPC分类号： C30B35/00 , C30B11/00 , C30B15/00 , C30B21/06 , C30B27/02 , C30B28/10 , C30B30/04
CPC分类号： C30B15/10 , C30B35/002 , Y10T117/10 , Y10T117/1024 , Y10T117/1032 , Y10T117/1052
摘要： A silica glass crucible having a sidewall portion and a bottom portion is provided with a first synthetic silica glass layer constituting an inner layer at least in the sidewall portion, a second synthetic silica glass layer constituting an inner layer at least in a region including a center of the bottom portion, and a natural silica glass layer constituting an outer layer in the sidewall portion and the bottom portion. A melting rate of the second synthetic silica glass layer with respect to a silicon melt is higher than that of the first synthetic silica glass layer. An aluminum concentration of the second synthetic silica glass layer is higher than that of the first synthetic silica glass layer.
摘要翻译：具有侧壁部和底部的石英玻璃坩埚具有至少在侧壁部中构成内层的第一合成石英玻璃层，至少在包括中心的区域中构成内层的第二合成石英玻璃层和在侧壁部和底部构成外层的天然石英玻璃层。第二合成石英玻璃层相对于硅熔体的熔融率高于第一合成石英玻璃层的熔融速度。第二合成石英玻璃层的铝浓度高于第一合成石英玻璃层的铝浓度。

5. 发明授权

US08240169B2 Vitreous silica crucible manufacturing apparatus 有权
标题翻译：硅玻璃坩埚制造设备
公开(公告)号：US08240169B2
公开(公告)日：2012-08-14
申请号：US12684178
申请日：2010-01-08
申请人： Masanori Fukui , Hiroshi Kishi , Masaki Morikawa
发明人： Masanori Fukui , Hiroshi Kishi , Masaki Morikawa
IPC分类号： C03B19/06 , H05B7/22
CPC分类号： C03B19/095 , H05B7/085
摘要： A vitreous silica crucible manufacturing apparatus includes a plurality of carbon electrodes configured to heat and melt raw material powder by arc discharge, and a value of a ratio R2/R1 of a diameter R2 of a front end of each of the carbon electrodes to a diameter R1 of a base end is set in a range of 0.6 to 0.8. Each carbon electrode has a diameter reduction portion formed at a front end position and reduced in diameter from a diameter R3 of a base end side to the diameter R2 of the front end. When a length of the diameter reduction portion is L1, the diameter of the front end is R2, the diameter of the base end is R1, an angle between the axis lines of the carbon electrodes is θ1, and X=(R1−R2)/2, a value of L1−(X/tan(θ1/2)) is set in a range of 50 to 150 mm.
摘要翻译：玻璃状石英玻璃坩埚的制造装置具有多个碳电极，其通过电弧放电来加热和熔化原料粉末，并且每个碳电极的前端的直径R2的比R2 / R1的值与直径基端的R1设定在0.6〜0.8的范围内。每个碳电极具有形成在前端位置并且从基端侧的直径R3到前端的直径R2的直径减小的直径减小部分。当直径减小部分的长度为L1时，前端的直径为R2，基端的直径为R1，碳电极的轴线之间的角度为1; X =（R1- R2）/ 2，将L1-（X / tan（＆amp; 1/2））的值设定在50〜150mm的范围内。

6. 发明申请

US20120160155A1 COMPOSITE CRUCIBLE, METHOD OF MANUFACTURING THE SAME, AND METHOD OF MANUFACTURING SILICON CRYSTAL 有权
标题翻译：复合硬质合金，其制造方法和制造硅晶体的方法
公开(公告)号：US20120160155A1
公开(公告)日：2012-06-28
申请号：US13394268
申请日：2010-08-20
申请人： Toshiaki Sudo , Takuma Yoshioka , Hiroshi Kishi , Takeshi Fujita , Minoru Kanda , Koichi Suzuki , Ken Kitahara
发明人： Toshiaki Sudo , Takuma Yoshioka , Hiroshi Kishi , Takeshi Fujita , Minoru Kanda , Koichi Suzuki , Ken Kitahara
IPC分类号： C30B15/10 , C03B19/02 , C03B20/00
CPC分类号： C04B41/5022 , C03B5/025 , C03B19/02 , C03B19/09 , C03B19/095 , C03C17/004 , C03C17/02 , C03C2217/213 , C03C2218/13 , C03C2218/17 , C04B35/185 , C04B41/009 , C04B41/86 , C04B2235/6027 , C30B15/10 , C30B29/06 , C30B35/002 , Y02P40/57 , Y10T117/1032 , C04B41/4527
摘要： The purpose of the present invention is to provide a crucible which has high viscosity at high temperature, and can be used for a long time, and can be manufactured at low cost, and a method of manufacturing the same. The composite crucible 10 is characterized in the use of mullite (3Al2O3.2SiO2) as the basic material of the crucible. The composite crucible 10 has the crucible body 11 made of mullite material whose main component is alumina and silica, and a transparent vitreous silica layer 12 formed on the inner surface of the crucible body 11. The thickness of the transparent vitreous silica layer 12 is smaller than that of the crucible body 11. The crucible body 11 can be formed by the slip casting method, and the transparent vitreous silica layer 12 can be formed by the thermal spraying method.
摘要翻译：本发明的目的是提供一种在高温下具有高粘度且长时间使用并且可以低成本制造的坩埚及其制造方法。复合坩埚10的特征在于使用莫来石（3Al2O3.2SiO2）作为坩埚的基本材料。复合坩埚10具有由主成分为氧化铝和二氧化硅的莫来石材料制成的坩埚体11和形成在坩埚体11的内表面上的透明玻璃状石英层12.透明玻璃状石英层12的厚度较小坩埚主体11可以通过流延法形成，透明玻璃状二氧化硅层12可以通过热喷涂法形成。

7. 发明申请

US20120132133A1 VITREOUS SILICA CRUCIBLE 有权
标题翻译：紫外线可溶性
公开(公告)号：US20120132133A1
公开(公告)日：2012-05-31
申请号：US13307253
申请日：2011-11-30
申请人： Toshiaki SUDO , Hiroshi KISHI , Eriko SUZUKI
发明人： Toshiaki SUDO , Hiroshi KISHI , Eriko SUZUKI
IPC分类号： C30B15/10
CPC分类号： C30B15/10 , C03B19/095 , Y10T117/1032
摘要： The present invention provides a vitreous silica crucible which can suppress buckling and sidewall lowering of the crucible without fear of mixing of impurities into silicon melt. According to the present invention, provided is a vitreous silica crucible for pulling a silicon single crystal, wherein a ratio I2/I1 is 0.67 to 1.17, where I1 and I2 are area intensities of the peaks at 492 cm−1 and 606 cm−1, respectively, in Raman spectrum of vitreous silica of the region having a thickness of 2 mm from an outer surface to an inner surface of a wall of the crucible.
摘要翻译：本发明提供了一种可以抑制坩埚的翘曲和侧壁降低的氧化硅玻璃坩埚，而不用担心杂质混入硅熔体中。根据本发明，提供一种用于拉制硅单晶的玻璃状石英坩埚，其中I2 / I1比为0.67-1.17，其中I1和I2是在492cm-1和606cm-1处的峰的面积强度分别具有从坩埚的壁的外表面到内表面的厚度为2mm的区域的玻璃态二氧化硅的拉曼光谱。

8. 发明授权

US08142565B2 Vitreous silica crucible for pulling single-crystal silicon 有权
标题翻译：用于拉拔单晶硅的玻璃状硅石坩埚
公开(公告)号：US08142565B2
公开(公告)日：2012-03-27
申请号：US12325033
申请日：2008-11-28
申请人： Hiroshi Kishi , Minoru Kanda
发明人： Hiroshi Kishi , Minoru Kanda
IPC分类号： C30B15/10 , C30B15/00
CPC分类号： C30B15/10 , C30B29/06 , Y10S117/90 , Y10T117/1024 , Y10T117/1032 , Y10T117/1052
摘要： A vitreous silica crucible for pulling single-crystal silicon, which is formed of vitreous silica and has a bottomed cylindrical shape, wherein, in a liquid-level movement range in the inner surface of the crucible, ranging from a position corresponding to the liquid surface level of a silicon melt at the time of stating the pulling of single-crystal silicon to a position corresponding to the liquid surface level of a silicon melt at the time of finishing the pulling of single-crystal silicon, the concentration of an OH group included in the vitreous silica is higher in an erosion thickness portion of the inner surface of the crucible than that in the range lower than the liquid surface level which is positioned below the liquid-level movement range.
摘要翻译：一种玻璃状石英玻璃坩埚，其用于拉拔由玻璃状二氧化硅形成的具有有底圆筒形状的单晶硅，其中，在坩埚内表面的液面移动范围内，从对应于液面的位置在完成拉伸单晶硅时，将单晶硅拉出到对应于硅熔体的液面的位置时的硅熔体的水平，包括OH基的浓度坩埚的内表面的侵蚀厚度部分的玻璃态二氧化硅的含量高于低于位于液面移动范围以下的液面的范围。

9. 发明授权

US07656073B2 Driving device 失效
标题翻译：驱动装置
公开(公告)号：US07656073B2
公开(公告)日：2010-02-02
申请号：US11271676
申请日：2005-11-10
申请人： Yutaka Doshida , Hiroshi Kishi , Masafumi Tsukada , Katsuei Ishida
发明人： Yutaka Doshida , Hiroshi Kishi , Masafumi Tsukada , Katsuei Ishida
IPC分类号： H01L41/08
CPC分类号： H02N2/025 , G02B3/12 , G02B3/14 , H01L41/0973
摘要： A driving device, small in size and light in weight, is to stabilize the position of a surface-deforming element while reducing the effect of gravity thus enabling stable transfer and positioning. The driving device is structured to hold a movable member integrated with a piezoelectric vibrator and a lens by a shaft provided at a tip of a spring extended from an inner surface to center of a passageway. The shaft extends through an opening formed in a protrusion of the movable member. By a tensile force of the spring, the movable member at its outer periphery is pulled radially and held. When applying a voltage with a waveform changing sharply to the piezoelectric vibrator, the movable member flexes maximally upward or downward to have a reduced diameter and an increasing acceleration thereby making a movement. Then, when a frictional force increases, the protrusion is held at a point where the movable member moves. Because of being held by a tensile force, the effect of gravity decreases and hence the movable member is stabilized in position relative to a direction of transfer.
摘要翻译：体积小，重量轻的驱动装置是为了稳定表面变形元件的位置，同时减少重力的影响，从而实现稳定的转移和定位。驱动装置构造成通过设置在从通道的内表面到中心延伸的弹簧的尖端处的轴来保持与压电振动器和透镜一体化的可移动部件。轴穿过形成在可动构件的突起中的开口。通过弹簧的张力，可动件在其外周被径向拉伸并保持。当施加具有波形变化的电压到压电振动器时，可动构件最大程度地向上或向下弯曲以具有减小的直径和增加的加速度，从而进行移动。然后，当摩擦力增加时，突起被保持在可移动部件移动的点。由于被张力保持，重力的作用减小，因此可动构件相对于传送方向稳定在适当位置。

10. 发明申请

US20100006022A1 SILICA GLASS CRUCIBLE AND METHOD FOR PULLING UP SILICON SINGLE CRYSTAL USING THE SAME 有权
标题翻译：二氧化硅玻璃巧克力和方法，用于拉丝硅单晶
公开(公告)号：US20100006022A1
公开(公告)日：2010-01-14
申请号：US12169828
申请日：2008-07-09
申请人： Hiroshi KISHI , Minoru KANDA
发明人： Hiroshi KISHI , Minoru KANDA
IPC分类号： C30B15/10
CPC分类号： C30B15/10 , C30B29/06 , Y10T117/1032
摘要： A silica glass crucible causing fewer pinholes in silicon single crystals is provided by a method of preventing pinholes by performing the pulling up of a silicon single crystal while restraining the dissolution rate of the crucible inner surface to 20 μm/hr or less, using a silica glass crucible for the pulling up of silicon single crystals, wherein the area of crystalline silica formed by crystallization of amorphous silica is restricted to 10% or less of the crucible inner surface area, or the density of pits formed from open bubbles on the crucible inner surface is restricted to 0.01 to 0.2 counts/mm2.
摘要翻译：通过使用二氧化硅将硅坩埚内表面的溶解速度抑制到20mum / hr以下的方法，通过进行硅单晶的拉拔来防止针孔的方法来提供硅单晶中的针孔少的石英玻璃坩埚用于提取硅单晶的玻璃坩埚，其中由无定形二氧化硅结晶形成的结晶二氧化硅的面积限制在坩埚内表面积的10％以下，或坩埚内部由开放气泡形成的凹坑的密度表面限制在0.01〜0.2个/ mm2。

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