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1. 发明授权

US07813165B2 Magnetic memory layers thermal pulse transitions 有权
标题翻译：磁存储层热脉冲过渡
公开(公告)号：US07813165B2
公开(公告)日：2010-10-12
申请号：US11881097
申请日：2007-07-25
申请人： James M. Daughton , Arthur V. Pohm
发明人： James M. Daughton , Arthur V. Pohm
IPC分类号： G11C5/06 , G11C5/08 , G11C11/02 , G11C11/14 , G11C11/15
CPC分类号： G11C11/16 , G11C11/15 , G11C11/1675 , H01L27/222 , H01L27/226 , H01L43/08
摘要： A ferromagnetic thin-film based digital memory having bit structures therein with a magnetic material film in which a magnetic property thereof is maintained below a critical temperature above which such magnetic property is not maintained, and may also have a plurality of word line structures each with heating sections located across from the magnetic material film in a corresponding one of the bit structures. These bit structures are sufficiently thermally isolated to allow selected currents in the adjacent word lines or in the bit structure, or both, to selectively heat the bit structure to approach the critical temperature. Such bit structures may have three magnetic material layers each with its own critical temperature for maintaining versus not maintaining a magnetic property thereof.
摘要翻译：一种基于铁磁性薄膜的数字存储器，其具有位结构，具有磁性材料膜，其磁性能保持在低于不能保持这种磁性的临界温度以下，并且还可以具有多个字线结构，在相应的一个位结构中位于磁性材料膜两侧的加热部分。这些位结构被充分热隔离，以允许相邻字线或位结构中的选定电流或两者都选择性地加热位结构以接近临界温度。这种钻头结构可以具有三个磁性材料层，每个磁性材料层具有其自身的临界温度以维持而不保持其磁性。

2. 发明授权

US07557562B2 Inverted magnetic isolator 有权
标题翻译：倒置磁隔离器
公开(公告)号：US07557562B2
公开(公告)日：2009-07-07
申请号：US11229282
申请日：2005-09-16
申请人： John K. Myers , James M. Daughton
发明人： John K. Myers , James M. Daughton
IPC分类号： G01R15/18 , G01R19/20 , G01R15/20 , G11B5/33 , G11B5/127
CPC分类号： G01R15/205 , G01R15/202 , G01R15/207 , H01L2924/0002 , H01L2924/00
摘要： A current determiner comprising a first input conductor and a first current sensor, formed of a plurality of magnetoresistive, anisotropic, ferromagnetic thin-film layers at least two of which are separated from one another by a nonmagnetic layer positioned therebetween, and both supported on a substrate adjacent to and spaced apart from one another so they are electrically isolated with the first current sensor positioned in those magnetic fields arising from any input currents. A first shield/concentrator of a material exhibiting a substantial magnetic permeability is positioned between the substrate and the first input conductor. A similar second current sensor can be individually formed, but can also be in the current determiner structure that is supported on the substrate along with a second input conductor supported on the substrate suited for conducting input currents therethrough.
摘要翻译：一种电流确定器，包括由多个磁阻各向异性铁磁薄膜层形成的第一输入导体和第一电流传感器，其中至少两个通过位于它们之间的非磁性层彼此分离，并且两者均支撑在基板相邻并彼此间隔开，使得它们与位于由任何输入电流产生的那些磁场中的第一电流传感器电隔离。表现出实质磁导率的材料的第一屏蔽/集中器位于基板和第一输入导体之间。类似的第二电流传感器可以单独地形成，但是也可以是电流确定器结构，其被支撑在衬底上，以及支撑在衬底上的第二输入导体，其适于传导通过其中的输入电流。

3. 发明申请

US20080123222A1 Superparamagnetic field sensing devices 失效
标题翻译：超顺磁场检测装置
公开(公告)号：US20080123222A1
公开(公告)日：2008-05-29
申请号：US12011545
申请日：2008-01-28
申请人： James M. Daughton , Dexin Wang
发明人： James M. Daughton , Dexin Wang
IPC分类号： G11B5/127
CPC分类号： G01R33/093 , A45B25/12 , B82Y10/00 , B82Y25/00 , G11B5/332 , G11B5/39 , G11B5/3903 , G11B5/3909 , G11B5/398 , G11B2005/0002 , G11B2005/3996 , G11C11/16 , H01F10/3254 , Y10T428/1114 , Y10T428/1121 , Y10T428/1143
摘要： A ferromagnetic thin-film based magnetic field sensor having an electrically insulative intermediate layer with two major surfaces on opposite sides thereof with an initial film of an anisotropic ferromagnetic material on one of those intermediate layer major surfaces and a superparamagnetic thin-film on the remaining one of said intermediate layer major surfaces.
摘要翻译：一种铁磁性薄膜基磁场传感器，其具有在其相对侧上具有两个主表面的电绝缘中间层，其中在其中一个中间层主表面上的各向异性铁磁材料的初始膜和剩余的一个超顺磁薄膜的所述中间层主表面。

4. 发明授权

US07355822B2 Superparamagnetic field sensing device 有权
标题翻译：超顺磁场检测装置
公开(公告)号：US07355822B2
公开(公告)日：2008-04-08
申请号：US11359743
申请日：2006-02-22
申请人： James M. Daughton , Dexin Wang
发明人： James M. Daughton , Dexin Wang
IPC分类号： G11B5/39 , G11R33/09
CPC分类号： G01R33/093 , A45B25/12 , B82Y10/00 , B82Y25/00 , G11B5/332 , G11B5/39 , G11B5/3903 , G11B5/3909 , G11B5/398 , G11B2005/0002 , G11B2005/3996 , G11C11/16 , H01F10/3254 , Y10T428/1114 , Y10T428/1121 , Y10T428/1143
摘要： A ferromagnetic thin-film based magnetic field sensor having an electrically insulative intermediate layer with two major surfaces on opposite sides thereof with an initial film of an anisotropic ferromagnetic material on one of those intermediate layer major surfaces and a superparamagnetic thin-film on the remaining one of said intermediate layer major surfaces.
摘要翻译：一种铁磁性薄膜基磁场传感器，其具有在其相对侧上具有两个主表面的电绝缘中间层，其中在其中一个中间层主表面上的各向异性铁磁材料的初始膜和剩余的一个超顺磁薄膜的所述中间层主表面。

5. 发明授权

US07054118B2 Superparamagnetic field sensing devices 有权
公开(公告)号：US07054118B2
公开(公告)日：2006-05-30
申请号：US10394799
申请日：2003-03-21
申请人： James M. Daughton , Dexin Wang
发明人： James M. Daughton , Dexin Wang
IPC分类号： G11B5/39
CPC分类号： G01R33/093 , A45B25/12 , B82Y10/00 , B82Y25/00 , G11B5/332 , G11B5/39 , G11B5/3903 , G11B5/3909 , G11B5/398 , G11B2005/0002 , G11B2005/3996 , G11C11/16 , H01F10/3254 , Y10T428/1114 , Y10T428/1121 , Y10T428/1143
摘要： A ferromagnetic thin-film based magnetic field sensor having an electrically insulative intermediate layer with two major surfaces on opposite sides thereof with an initial film of an anisotropic ferromagnetic material on one of those intermediate layer major surfaces and a superparamagnetic thin-film on the remaining one of said intermediate layer major surfaces.

6. 发明授权

US06713195B2 Magnetic devices using nanocomposite materials 有权
标题翻译：使用纳米复合材料的磁性器件
公开(公告)号：US06713195B2
公开(公告)日：2004-03-30
申请号：US10041910
申请日：2002-01-07
申请人： Dexin Wang , Zhenghong Qian , James M. Daughton , Robert T. Fayfield
发明人： Dexin Wang , Zhenghong Qian , James M. Daughton , Robert T. Fayfield
IPC分类号： G11B566
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3903 , G11B5/3909 , G11B2005/3996 , H01F10/3231 , H01L43/10 , Y10T428/1121 , Y10T428/12861 , Y10T428/12931 , Y10T428/26 , Y10T428/261
摘要： A ferromagnetic thin-film based magnetoresistive device with a first ferromagnetic material based film having electrically conductive, ferromagnetic material nanogranules embedded in an intergranular material of a smaller electrical conductivity first nonmagnetic. The device may have an intermediate layer adjacent the first ferromagnetic material based film and a second film is on the other side of the intermediate layer of a substantially ferromagnetic material. The first film is less than 1.0 &mgr;m thick.
摘要翻译：一种基于铁磁薄膜的磁阻器件，其具有第一基于铁磁材料的膜，该膜具有导电的铁磁性材料纳米颗粒，该纳米粒子嵌入在较小导电性的非晶格材料中。该装置可以具有与第一基于铁磁材料的膜相邻的中间层，并且第二膜位于基本上铁磁材料的中间层的另一侧上。第一个胶片厚度小于1.0毫米。

7. 发明授权

US5595830A Magnetoresistive structure with alloy layer having two substantially immiscible components 失效
标题翻译：具有合金层的磁阻结构具有两个基本上不混溶的组分
公开(公告)号：US5595830A
公开(公告)日：1997-01-21
申请号：US232324
申请日：1994-04-25
申请人： James M. Daughton
发明人： James M. Daughton
IPC分类号： H01F10/30 , G01R33/09 , G11B5/39 , H01F10/08 , H01F10/32 , H01L21/8246 , H01L27/22 , H01L43/08 , H01L43/10 , G11B5/66
CPC分类号： H01L43/10 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3903 , G11B5/3945 , G11B5/3948 , H01F10/324 , H01F10/325 , H01L43/08 , G11B2005/3996 , Y10S428/90 , Y10S428/928 , Y10T428/1157 , Y10T428/12465 , Y10T428/12632 , Y10T428/12903 , Y10T428/1291 , Y10T428/12931
摘要： A magnetoresistive layered structure having a pair of magnetoresistive, anisotropic ferromagnetic thin-films separated by an intermediate layer on a substrate of less than 50 .ANG. thickness formed of a substantially nonmagnetic, conductive alloy having two immiscible components therein.
摘要翻译：一种磁阻层状结构，其具有一对磁阻各向异性铁磁性薄膜，该薄膜由基底上的中间层分隔，该中间层由小于50埃的厚度由基本上非磁性的导电合金形成，该合金在其中具有两个不混溶的组分。

8. 发明授权

US4731757A Magnetoresistive memory including thin film storage cells having tapered ends 失效
标题翻译：磁阻存储器包括具有锥形末端的薄膜存储单元
公开(公告)号：US4731757A
公开(公告)日：1988-03-15
申请号：US879679
申请日：1986-06-27
申请人： James M. Daughton , Jack S. T. Huang
发明人： James M. Daughton , Jack S. T. Huang
IPC分类号： G11C11/15
CPC分类号： G11C11/15
摘要： A digital memory based on a memory cell having two magnetoresistive ferromagnetic film portions separated by an intermediate layer all of which are gradually narrowed at the ends thereof.Adjacent memory cells are preferrably arranged in a line with conductive junctions therebetween. The magnetic state of each cell can be sensed or set by providing currents of different magnitudes in conductive word lines which overlie the cells. The narrowed ends of the cells reduce demagnetizing effects which occur if the cell ends are abruptly terminated.
摘要翻译：一种基于存储单元的数字存储器，具有由中间层分离的两个磁阻铁磁膜部分，所述中间层全部在其端部逐渐变窄。相邻存储器单元优选地布置在其间具有导电接头的线中。可以通过在覆盖在单元上的导电字线中提供不同幅度的电流来感测或设置每个单元的磁状态。细胞的变窄端减少如果细胞末端突然终止而发生的消磁作用。

9. 发明授权

US07660081B2 Superparamagnetic platelets field sensing devices 失效
标题翻译：超顺磁性血小板场感测装置
公开(公告)号：US07660081B2
公开(公告)日：2010-02-09
申请号：US12011545
申请日：2008-01-28
申请人： James M. Daughton , Dexin Wang
发明人： James M. Daughton , Dexin Wang
IPC分类号： G11B5/127 , G11B5/39
CPC分类号： G01R33/093 , A45B25/12 , B82Y10/00 , B82Y25/00 , G11B5/332 , G11B5/39 , G11B5/3903 , G11B5/3909 , G11B5/398 , G11B2005/0002 , G11B2005/3996 , G11C11/16 , H01F10/3254 , Y10T428/1114 , Y10T428/1121 , Y10T428/1143
摘要： A ferromagnetic thin-film based magnetic field sensor having an electrically insulative intermediate layer with two major surfaces on opposite sides thereof with an initial film of an anisotropic ferromagnetic material on one of those intermediate layer major surfaces and thin-film platelets on the remaining one of the intermediate layer major surfaces.
摘要翻译：一种基于铁磁薄膜的磁场传感器，其具有在其相对侧上具有两个主表面的电绝缘中间层，其中一个中间层主表面上的各向异性铁磁材料的初始膜和剩下的一个的薄膜片中间层主要表面。

10. 发明授权

US07266013B2 Magnetic memory layers thermal pulse transitions 有权
标题翻译：磁存储层热脉冲过渡
公开(公告)号：US07266013B2
公开(公告)日：2007-09-04
申请号：US11651729
申请日：2007-01-10
申请人： James M. Daughton , Arthur V. Pohm
发明人： James M. Daughton , Arthur V. Pohm
IPC分类号： G11C11/14 , G11C11/15
CPC分类号： G11C11/16 , G11C11/15 , G11C11/1675 , H01L27/222 , H01L27/226 , H01L43/08
摘要： A ferromagnetic thin-film based digital memory having a bit structures therein a magnetic material film in which a magnetic property thereof is maintained below a critical temperature above which such magnetic property is not maintained, and may also have a plurality of word line structures each with heating sections located across from the magnetic material film in a corresponding one of the bit structures. These bit structures are sufficiently thermally isolated to allow selected currents in the adjacent word lines or in the bit structure, or both, to selectively heat the bit structure to approach the critical temperature. Such bit structures may have three magnetic material layers each with its own critical temperature for maintaining versus not maintaining a magnetic property thereof.
摘要翻译：一种基于铁磁性薄膜的数字存储器，其中具有磁性材料膜的位结构，其中磁性材料膜的磁性能保持在低于不能保持这种磁性的临界温度以下，并且还可以具有多个字线结构，每个具有在相应的一个位结构中位于磁性材料膜两侧的加热部分。这些位结构被充分热隔离，以允许相邻字线或位结构中的选定电流或两者都选择性地加热位结构以接近临界温度。这种钻头结构可以具有三个磁性材料层，每个磁性材料层具有其自身的临界温度以维持而不保持其磁性。

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