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1. 发明授权

US07211885B2 Vertical electrical interconnections in a stack 失效
标题翻译：堆叠中的垂直电气互连
公开(公告)号：US07211885B2
公开(公告)日：2007-05-01
申请号：US10390178
申请日：2003-03-14
申请人： Per-Erik Nordal , Hans Gude Gudesen , Geirr Ivarsson Leidstad , Göran Gustafsson , Johan Carlsson
发明人： Per-Erik Nordal , Hans Gude Gudesen , Geirr Ivarsson Leidstad , Göran Gustafsson , Johan Carlsson
IPC分类号： H01L23/02
CPC分类号： H01L24/25 , H01L24/24 , H01L24/82 , H01L25/0657 , H01L2224/24051 , H01L2224/24145 , H01L2224/24146 , H01L2224/24225 , H01L2224/24226 , H01L2224/25175 , H01L2224/76155 , H01L2224/82102 , H01L2225/06524 , H01L2225/06527 , H01L2225/06551 , H01L2225/06555 , H01L2225/06562 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01019 , H01L2924/01033 , H01L2924/01055 , H01L2924/01057 , H01L2924/01074 , H01L2924/01082 , H01L2924/10253 , H01L2924/14 , H01L2924/30105 , H01L2924/00
摘要： In a memory and/or data processing device having at least two stacked layers which are supported by a substrate or forming a sandwiched self-supporting structure, wherein the layers include memory and/or processing circuitry with mutual connections between the layers and/or to circuitry in the substrate, the layers the are mutually arranged such that contiguous layers form a staggered structure on at least one edge of the device and at least one electrical edge conductor is provided passing over the edge on one layer and down one step at a time, enabling the connection to an electrical conductor in any of the following layers in the stack. A method for manufacturing a device of this kind includes the steps for adding the layers successively, one layer at a time, such that the layers form a staggered structure, and for providing one or more layers with at least one electrical contact pad for linking to one or more interlayer edge connectors.
摘要翻译：在具有由衬底支撑或形成夹层自支撑结构的至少两个层叠层的存储器和/或数据处理设备中，其中所述层包括存储器和/或处理电路，所述存储器和/或处理电路具有层之间的相互连接和/或电路在衬底中，这些层被相互布置，使得连续的层在器件的至少一个边缘上形成交错的结构，并且至少一个电气边缘导体被提供在一个层上沿着边缘通过并且一次一个下降，使得能够连接到堆叠中的以下任何层中的电导体。用于制造这种装置的方法包括以下步骤：一次一层地层叠这些层，使得这些层形成交错结构，并且用于提供一层或多层具有至少一个电接触垫，用于连接到一个或多个夹层边缘连接器。

2. 发明授权

US06950330B2 Addressing of memory matrix 有权
公开(公告)号：US06950330B2
公开(公告)日：2005-09-27
申请号：US10934573
申请日：2004-09-07
申请人： Michael O. Thompson , Per-Erik Nordal , Hans Gude Gudesen , Johan Carlsson , Göran Gustafsson
发明人： Michael O. Thompson , Per-Erik Nordal , Hans Gude Gudesen , Johan Carlsson , Göran Gustafsson
IPC分类号： G02F1/133 , G09G3/20 , G09G3/36 , G11C7/06 , G11C7/10 , G11C8/18 , G11C11/22
CPC分类号： G11C11/22 , G09G3/20 , G09G3/3629 , G09G2300/06 , G09G2310/0251 , G09G2320/0209 , G11C7/06 , G11C7/1006 , G11C8/18
摘要： A method of driving a passive matrix display or memory array of cells comprising an electrically polarizable material exhibiting hysteresis, in particular a ferroelectric material, wherein the polarization state of individual cells can be switched by application of electric potentials or voltages to word and bit lines in the matrix or array.

3. 发明授权

US08184467B2 Card-like memory unit with separate read/write unit 有权
标题翻译：带有单独读/写单元的卡状存储单元
公开(公告)号：US08184467B2
公开(公告)日：2012-05-22
申请号：US11917571
申请日：2006-06-08
申请人： Per Bröms , Christer Karlsson , Geirr I. Leistad , Per Hamberg , Staffan Björklid , Johan Carlsson , Göran Gustafsson , Hans Gude Gudesen
发明人： Per Bröms , Christer Karlsson , Geirr I. Leistad , Per Hamberg , Staffan Björklid , Johan Carlsson , Göran Gustafsson , Hans Gude Gudesen
IPC分类号： G11C11/22
CPC分类号： G06K7/0021 , B82Y10/00 , G11B9/02 , G11B9/1454 , G11C11/22 , G11C11/5664 , G11C13/0009 , G11C13/0014 , G11C13/0016
摘要： In a non-volatile electric memory system a memory unit and a read/write unit are provided as physically separate units. The memory unit is based on a memory material that can be set to at least two distinct physical states by applying an electric field across the memory material. Electrodes and/or contacts are either provided in the memory unit or in the read/write unit and contacts are at least always provided in the read/write unit. Electrodes and contacts are provided in a geometrical arrangement, which defines geometrically one or more memory cells in the memory layer. Establishing a physical contact between the memory unit and the read/write unit closes an electrical circuit over the addressed memory cell such that read, write or erase operations can be effected. The memory material of the memory unit can be polarized into two discernible polarization states.
摘要翻译：在非易失性电存储器系统中，存储单元和读/写单元被提供为物理上分离的单元。存储器单元基于可以通过在存储器材料上施加电场而被设置为至少两种不同物理状态的存储器材料。电极和/或触点被提供在存储器单元中或读/写单元中，并且触点至少总是设置在读/写单元中。电极和触点以几何布置提供，其几何地限定存储器层中的一个或多个存储器单元。在存储器单元和读/写单元之间建立物理接触关闭寻址的存储单元上的电路，从而可以实现读，写或擦除操作。存储器单元的存储材料可以被偏振成两个可识别的偏振状态。

4. 发明授权

US07646629B2 Method for operating a data storage apparatus employing passive matrix addressing 失效
标题翻译：用于操作采用无源矩阵寻址的数据存储装置的方法
公开(公告)号：US07646629B2
公开(公告)日：2010-01-12
申请号：US12010067
申请日：2008-01-18
申请人： Per Hamberg , Christer Karlsson , Per-Erik Nordal , Nicklas Ojakangas , Johan Carlsson , Hans G. Gudesen
发明人： Per Hamberg , Christer Karlsson , Per-Erik Nordal , Nicklas Ojakangas , Johan Carlsson , Hans G. Gudesen
IPC分类号： G11C11/22
CPC分类号： G11C11/22 , G06F12/0238 , G06F2212/1036 , G06F2212/7211 , G11C8/12 , G11C2013/0083
摘要： In a method for obviating the effect of disturb voltages in a data storage apparatus employing passive matrix addressing, an application of electric potentials for an addressing operation is according to a voltage pulse protocol. The data storage cells of the apparatus are provided in two or more electrically separated segments each constituting non-overlapping physical address subspaces of the data storage apparatus physical address space. A number of data storage cells in each segment are preset to the same polarization by an active voltage pulse with a specific polarization. In a first addressing operation one or more data storage cells are read by applying an active pulse with the same polarization to each data storage cell and recording the output charge response. On basis thereof the output data in subsequent second addressing operation are copied onto preset data storage cells in another segment of the data storage apparatus, this segment being selected on the basis of its previous addressing history.
摘要翻译：在采用无源矩阵寻址的数据存储装置中避免干扰电压的影响的方法中，用于寻址操作的电位的应用是根据电压脉冲协议。设备的数据存储单元被提供在两个或更多个电隔离的段中，每个段构成数据存储设备物理地址空间的非重叠物理地址子空间。每个段中的多个数据存储单元通过具有特定极化的有源电压脉冲预设为相同的极化。在第一寻址操作中，通过向每个数据存储单元施加具有相同极化的有源脉冲并记录输出电荷响应来读取一个或多个数据存储单元。基于此，随后的第二寻址操作中的输出数据被复制到数据存储装置的另一段中的预定数据存储单元上，该段根据其先前的寻址历史进行选择。

5. 发明申请

US20060073658A1 Method for making a ferroelectric memory cell in a ferroelectric memory device, and a ferroelectric memory device 审中-公开
标题翻译：在铁电存储器件中制造铁电存储单元的方法和铁电存储器件
公开(公告)号：US20060073658A1
公开(公告)日：2006-04-06
申请号：US11294392
申请日：2005-12-06
申请人： Henrik Ljungcrantz , Niclas Edvardsson , Johan Carlsson , Goran Gustafsson
发明人： Henrik Ljungcrantz , Niclas Edvardsson , Johan Carlsson , Goran Gustafsson
IPC分类号： H01L21/8242 , H01L21/20 , H01L21/00
CPC分类号： H01L21/32051 , H01L27/11502
摘要： In a method for making ferroelectric memory cells in a ferroelectric memory device a first electrode comprising at least one metal layer and optionally at least one metal oxide layer is formed on a silicon substrate which has an optional insulating layer of silicon dioxide. A ferroelectric layer consisting of a thin film of ferroelectric polymer is formed on the top of the first electrode layer and at least a second electrode comprising at least one metal layer and at least one metal oxide layer is formed on the ferroelectric layer. The second electrode is deposited by thermal evaporation of a high-purity evaporation source from an effusion cell onto the ferroelectric layer in a vacuum chamber filled with a gas or a gas mixture. A ferroelectric memory device wherein the memory cell has been made with the above method, comprises at least a first and a second set of respectively parallel electrodes, wherein the electrodes in a set are provided orthogonally to the electrodes of a nearest following set and with memory cells formed in a ferroelectric layer provided between successive electrode sets, such that memory cells are defined in the crossings between the electrodes which contact the ferroelectric layer on each side thereof.
摘要翻译：在铁电存储器件中制造铁电存储单元的方法中，在具有任选的二氧化硅绝缘层的硅衬底上形成包括至少一个金属层和任选的至少一个金属氧化物层的第一电极。在第一电极层的顶部形成由铁电聚合物薄膜构成的铁电层，并且在铁电层上形成至少包含至少一个金属层和至少一个金属氧化物层的第二电极。通过在填充有气体或气体混合物的真空室中将高纯度蒸发源从渗出室热蒸发到铁电层上来沉积第二电极。具有上述方法制造存储单元的铁电存储器件包括至少第一组和第二组分别平行的电极，其中一组中的电极与最接近的组的电极和记忆体正交地设置形成在连续的电极组之间的铁电体层中形成的单元，使得存储单元被限定在与其每一侧接触铁电体层的电极之间的交叉中。

6. 发明授权

US06852555B1 Method in the fabrication of organic thin-film semiconducting devices 失效
标题翻译：有机薄膜半导体器件制造方法
公开(公告)号：US06852555B1
公开(公告)日：2005-02-08
申请号：US09720329
申请日：2000-04-14
申请人： Lucimara Stolz Roman , Olle Inganäs , Olle Hagel , Johan Carlsson , Göran Gustafsson , Magnus Berggren
发明人： Lucimara Stolz Roman , Olle Inganäs , Olle Hagel , Johan Carlsson , Göran Gustafsson , Magnus Berggren
IPC分类号： H01L21/28 , H01L21/00 , H01L21/336 , H01L29/786 , H01L29/861 , H01L51/00 , H01L51/05 , H01L51/10 , H01L51/30 , H01L51/40
CPC分类号： H01L51/424 , H01L51/0036 , H01L51/0037 , H01L51/0038 , Y02E10/549
摘要： In a method in the fabrication of an organic thin-film semiconducting device comprising an electrode arrangement with electrodes contacting a semiconducting organic material, an anode in the electrode arrangement is made as a two-layer structure, where the first layer is a conducting or semiconducting material or a combination thereof deposited on a substrate and a second layer is a conducting polymer with a work function higher than that of the material in the first layer. A third layer consisting of semiconducting organic material and forming the active material of the device is deposited on the top of the anode, and the cathode made of a fourth layer of a metal deposited on a third layer. In a preferred embodiment a low work function metal is used in the first layer, a doped conjugated polymer such as PEDOT-PSS in the second layer, while the cathode may be formed of the same metal as used in the first layer. Use in the manufacturing of the electrode arrangement in an organic thin-film diode or in a transistor structure.
摘要翻译：在制造有机薄膜半导体器件的方法中，包括具有与半导体有机材料接触的电极的电极装置，电极装置中的阳极被制成两层结构，其中第一层是导电或半导体沉积在基底和第二层上的材料或其组合是导电聚合物，其功函数高于第一层中的材料。由半导体有机材料构成并形成器件的活性材料的第三层沉积在阳极的顶部，阴极由沉积在第三层上的第四层金属制成。在优选实施例中，在第一层中使用低功函数金属，在第二层中使用诸如PEDOT-PSS的掺杂共轭聚合物，而阴极可以由与第一层中使用的相同的金属形成。用于制造有机薄膜二极管或晶体管结构中的电极布置。

7. 发明授权

US06787825B1 Data storage and processing apparatus, and method for fabricating the same 有权
标题翻译：数据存储和处理装置及其制造方法
公开(公告)号：US06787825B1
公开(公告)日：2004-09-07
申请号：US09463906
申请日：2001-01-02
申请人： Hans Gude Gudesen , Per-Erik Nordal , Geirr I. Leistad , Johan Carlsson , Göran Gustafsson , Michael O Thompson
发明人： Hans Gude Gudesen , Per-Erik Nordal , Geirr I. Leistad , Johan Carlsson , Göran Gustafsson , Michael O Thompson
IPC分类号： H01L2980
CPC分类号： H01L21/02686 , G11C5/02 , G11C17/06 , H01L21/02532 , H01L21/02689 , H01L21/2026 , H01L21/768 , H01L21/76888 , H01L21/76894 , H01L21/8221 , H01L27/0688 , H01L27/1021 , H01L27/105 , H01L27/1052 , H01L27/108 , H01L27/11 , H01L27/11502 , H01L51/0001 , H01L51/0024 , H01L2924/0002 , H01L2924/00
摘要： A data storage/processing apparatus includes ROM and/or WORM and/or REWRITEABLE memory modules and/or processing modules provided as a single main layer or multiple main layers on top of a substrate. Transistors and/or diodes operate the apparatus. In one set of embodiments, at least some of the transistors and/or diodes are provided on or in the substrate. In another set of embodiments, at least some of the layers on the top of the substrate include low-temperature compatible organic materials and/or low temperature compatible processes inorganic films, and the transistors and/or diodes need not be disposed on or in the substrate. In a related fabricating method, the memory and/or processing modules are provided on the substrate by depositing the layers in successive steps under thermal conditions that avoid subjecting an already-deposited, processed underlying layers to static or dynamic temperatures exceeding given stability limits, particularly with regard to organic materials.
摘要翻译：数据存储/处理装置包括在基板顶部上作为单个主层或多个主层提供的ROM和/或WORM和/或REWRITEABLE存储器模块和/或处理模块。晶体管和/或二极管操作该装置。在一组实施例中，晶体管和/或二极管中的至少一些设置在衬底上或衬底中。在另一组实施例中，衬底顶部上的至少一些层包括低温兼容的有机材料和/或低温兼容的无机膜，并且晶体管和/或二极管不需要被置于或基质。在相关制造方法中，存储器和/或处理模块通过在热条件下的连续步骤中沉积层而提供在衬底上，避免了已经沉积的经处理的下层在超过给定稳定极限的静态或动态温度下，特别是关于有机材料。

8. 发明授权

US06428452B1 Assembly robot for wing 失效
标题翻译：机翼装配机器人
公开(公告)号：US06428452B1
公开(公告)日：2002-08-06
申请号：US09646525
申请日：2000-11-20
申请人： Per Dahlström , Håkan Andersson , Anders Högne , Ronnie Stensson , Roger Holmstedt , Johan Carlsson , Per Benkowski
发明人： Per Dahlström , Håkan Andersson , Anders Högne , Ronnie Stensson , Roger Holmstedt , Johan Carlsson , Per Benkowski
IPC分类号： B23Q3157
CPC分类号： B25J17/0216 , B23P19/04 , B23P2700/01 , B64F5/10 , Y10S483/901 , Y10T29/4978 , Y10T29/5118 , Y10T29/519 , Y10T29/5191 , Y10T483/10 , Y10T483/15 , Y10T483/1795
摘要： A method and a device for assembling an air-craft wing incorporating at least two of the operations drilling, riveting and fitting of anchor nuts (20), where a robot (7) is mobile relative to the wing in a plane parallel to the wing and where the robot (7) is equipped with an arm (9) designed to accommodate a tool holder (15), where the tool holder (15) is primarily equipped with tools for performing a single work operation, whereby the robot is moved so that the robot arm (9) is positioned at the first work position on the aircraft wing unit, where the robot (7) carries out the first work operation at the said first work position, where the robot arm (9) is manoeuvred in the correct order to new work positions on the wing unit within a work area (10) reachable by the robot arm (9), and carries out the first work operation at these new work positions.
摘要翻译：一种用于组装包括至少两个锚定螺母（20）的钻孔，铆接和装配的飞行器机翼的方法和装置，其中机器人（7）能够在平行于翼的平面中相对于机翼移动并且其中所述机器人（7）配备有设计成容纳工具架（15）的臂（9），其中所述工具保持器（15）主要配备有用于执行单个作业操作的工具，由此所述机器人被移动机器人臂（9）位于飞行器机翼单元上的第一工作位置，其中机器人（7）在所述第一工作位置执行机器人手臂（9）在其中操纵的第一工作操作在机器人臂（9）可到达的工作区域（10）内的机翼单元上的新的工作位置的正确顺序，并且在这些新的工作位置执行第一次工作操作。

9. 发明授权

US1921558A Dumping car 失效
公开(公告)号：US1921558A
公开(公告)日：1933-08-08
申请号：US49983330
申请日：1930-12-03
申请人： JOHAN CARLSSON
发明人： JOHAN CARLSSON
IPC分类号： B60P1/14
CPC分类号： B60P1/14

10. 发明授权

US09795909B2 Gas exhaust filter device for a bioreactor 有权
公开(公告)号：US09795909B2
公开(公告)日：2017-10-24
申请号：US14241550
申请日：2012-08-29
申请人： Henrik K. Eriksson , Patric Fricking , L. Johan Carlsson
发明人： Henrik K. Eriksson , Patric Fricking , L. Johan Carlsson
IPC分类号： B01D46/00 , B01D46/52 , C12M1/12 , C12M1/00
CPC分类号： B01D46/0039 , B01D46/521 , C12M29/04 , C12M37/02
摘要： A gas exhaust filter device for a bioreactor with reduced blockage by condensed liquid is disclosed, which comprises a housing with a filter medium, a gas inlet and a gas outlet and also further comprises a plurality of ribs extending from at least one inner wall of the housing in a region between the gas inlet and the filter medium.

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