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1. 发明授权

US06225867B1 Protection scheme for multi-transistor amplifiers 失效
标题翻译：多晶体管放大器的保护方案
公开(公告)号：US06225867B1
公开(公告)日：2001-05-01
申请号：US08996997
申请日：1997-12-23
申请人： John Ilowski , William Kung
发明人： John Ilowski , William Kung
IPC分类号： H03F152
CPC分类号： H03F1/52 , H03F1/302 , H03F2203/21178
摘要： The present invention deals with the problems related to thermal runaway and over-voltage breakdown in integrated circuits using a series of power transistors interconnected in a parallel circuit arrangement. The general technique described consists of a protection scheme that involves the application of a fusible material to form ballast resistor components. These components are connected in series with each of the transistors in the integrated circuits. The main advantages are significant area and cost savings in the manufacturing of the integrated circuits as well as an increase in their yield, thereby reducing costly field maintenance and equipment returns.
摘要翻译：本发明涉及使用以并联电路布置互连的一系列功率晶体管的集成电路中的热失控和过电压击穿的问题。所描述的一般技术包括保护方案，其涉及应用可熔材料形成镇流电阻器部件。这些部件与集成电路中的每个晶体管串联连接。主要优点是集成电路制造中的重要面积和成本节省以及其产量的增加，从而降低了现场维护和设备回报的昂贵成本。

2. 发明授权

US06774719B1 Power amplifier configuration 有权
标题翻译：功率放大器配置
公开(公告)号：US06774719B1
公开(公告)日：2004-08-10
申请号：US10661603
申请日：2003-09-15
申请人： David Neal Wessel , John Ilowski , Morris Repeta
发明人： David Neal Wessel , John Ilowski , Morris Repeta
IPC分类号： H03G320
CPC分类号： H03F1/0222 , H03F1/3247
摘要： A variable capacitance and control system used in a compensative manner to improve efficiency in power amplifier arrangements arranged to receive a power input which is voltage-modulated responsive to at least one control signal representative of the data signal. Also included are methods and software for controlling said power amplifier arrangements including the variable capacitance and control system. The data input to the power amplifier is pre-distorted and the resulting power amplification is substantially linear. The arrangement may be used in wireless base station transmitters, for example. Improved data transmission services are also provided which make use of such power amplifiers.
摘要翻译：以补偿方式使用的可变电容和控制系统，以提高功率放大器装置的效率，该功率放大器装置布置成接收响应于表示数据信号的至少一个控制信号进行电压调制的功率输入。还包括用于控制包括可变电容和控制系统的所述功率放大器装置的方法和软件。输入到功率放大器的数据是预失真的，并且所得功率放大基本上是线性的。例如，该布置可以用于无线基站发射机。还提供了改进的数据传输服务，其利用这种功率放大器。

3. 发明申请

US20090206928A1 Enhanced doherty amplifier with asymmetrical semiconductors 有权
标题翻译：具有不对称半导体的增强型多功能放大器
公开(公告)号：US20090206928A1
公开(公告)日：2009-08-20
申请号：US12431321
申请日：2009-04-28
申请人： Gregory Bowles , Martin O'flaherty , Scott Widdowson , John Ilowski
发明人： Gregory Bowles , Martin O'flaherty , Scott Widdowson , John Ilowski
IPC分类号： H03F3/68
CPC分类号： H03F3/245 , H03F1/0288 , H03F1/3247
摘要： The present disclosures an amplification unit which comprises a first amplifier and a second amplifier connected in parallel, the first amplifier and the second amplifier comprising semiconductor devices that are not the same amplifier design. The present application also discloses a signal input line connected to the first amplifier and the second amplifier. A signal output line is also disclosed which is connected to the first amplifier and the second amplifier.
摘要翻译：本发明公开了一种放大单元，其包括并联连接的第一放大器和第二放大器，第一放大器和第二放大器包括不同于放大器设计的半导体器件。本申请还公开了连接到第一放大器和第二放大器的信号输入线。还公开了连接到第一放大器和第二放大器的信号输出线。

4. 发明授权

US07541866B2 Enhanced doherty amplifier with asymmetrical semiconductors 失效
公开(公告)号：US07541866B2
公开(公告)日：2009-06-02
申请号：US11537084
申请日：2006-09-29
申请人： Gregory Bowles , Martin O'Flaherty , Scott Widdowson , John Ilowski
发明人： Gregory Bowles , Martin O'Flaherty , Scott Widdowson , John Ilowski
IPC分类号： H03F3/68
CPC分类号： H03F3/245 , H03F1/0288 , H03F1/3247
摘要： The present disclosures an amplification unit which comprises a first amplifier and a second amplifier connected in parallel, the first amplifier and the second amplifier comprising semiconductor devices that are not the same amplifier design. The present application also discloses a signal input line connected to the first amplifier and the second amplifier. A signal output line is also disclosed which is connected to the first amplifier and the second amplifier.

5. 发明授权

US08410848B2 Enhanced doherty amplifier with asymmetrical semiconductors 有权
公开(公告)号：US08410848B2
公开(公告)日：2013-04-02
申请号：US12431321
申请日：2009-04-28
申请人： Gregory Bowles , Martin O'Flaherty , Scott Widdowson , John Ilowski
发明人： Gregory Bowles , Martin O'Flaherty , Scott Widdowson , John Ilowski
IPC分类号： H03F3/68
CPC分类号： H03F3/245 , H03F1/0288 , H03F1/3247
摘要： The present disclosures an amplification unit which comprises a first amplifier and a second amplifier connected in parallel, the first amplifier and the second amplifier comprising semiconductor devices that are not the same amplifier design. The present application also discloses a signal input line connected to the first amplifier and the second amplifier. A signal output line is also disclosed which is connected to the first amplifier and the second amplifier.

6. 发明授权

US5717241A Gate controlled lateral bipolar junction transistor 失效
标题翻译：门控横向双极结晶体管
公开(公告)号：US5717241A
公开(公告)日：1998-02-10
申请号：US310003
申请日：1994-09-20
申请人： Duljit S. Malhi , M. Jamal Deen , William Kung , John Ilowski , Stephen J. Kovacic
发明人： Duljit S. Malhi , M. Jamal Deen , William Kung , John Ilowski , Stephen J. Kovacic
IPC分类号： H01L27/06 , H01L21/8249 , H01L27/07 , H01L29/73 , H01L29/735 , H01L29/739 , H03G1/00 , H01L29/76 , H01L29/80 , H01L29/94
CPC分类号： H03G1/007 , H01L27/0722 , H01L29/7302 , H01L29/735 , H01L29/7393
摘要： A gate controlled lateral bipolar junction transistor (GCLBJT) device for an integrated circuit and a method of fabrication thereof are provided. The GCLBJT resembles a merged field effect transistor and lateral bipolar transistor, i.e. a lateral bipolar transistor having base, emitter and collector terminals and a fourth terminal for controlling a gate electrode overlying an active base region. The device is operable as an electronically configurable lateral transistor. Advantageously a heavily doped buried layer provides a base electrode having a base contact which surrounds and encloses the collector. The surface region between emitter and collector is characterized by lightly doped regions adjacent and contiguous with the heavily doped emitter and collector, which effectively reduce the base width of the bipolar transistor and improve operation for analog applications.
摘要翻译：提供了一种用于集成电路的栅极控制横向双极结型晶体管（GCLBJT）器件及其制造方法。 GCLBJT类似于合并的场效应晶体管和横向双极晶体管，即具有基极，发射极和集电极端子的横向双极晶体管，以及用于控制覆盖有源基极区域的栅电极的第四端子。该器件可操作为电子可配置的横向晶体管。有利的是，重掺杂的掩埋层提供了具有包围和封闭收集器的基极接触的基极。发射极和集电极之间的表面区域的特征在于与重掺杂的发射极和集电极相邻并邻接的轻掺杂区域，这有效地降低了双极晶体管的基极宽度并改善了模拟应用的操作。

7. 发明授权

US07573330B2 High efficiency digital power amplifier 有权
标题翻译：高效率数字功率放大器
公开(公告)号：US07573330B2
公开(公告)日：2009-08-11
申请号：US11981780
申请日：2007-10-30
申请人： Noureddine Outaleb , Adrian Bergsma , John Ilowski
发明人： Noureddine Outaleb , Adrian Bergsma , John Ilowski
IPC分类号： H03F3/217
CPC分类号： H03F3/193 , H03F3/2173 , H03F3/45
摘要： A digital power amplifier (or power switching amplifier or power switch) for use in a digital transmitter includes a low impedance multi-stage driver circuit having a low impedance pre-driver and a low impedance driver. The drive circuit drives a power switch stage having two power transistors configured in a current mode class-D push-pull configuration. Utilization of gallium nitride (GaN) transistors or pseudomorphic high electronic mobility transistors (pHEMT) (or combination thereof) and sizing the transistors progressively larger in the driver than in the pre-driver (at least about 3×) provides a reduction in output impedance of the driver circuit and progressive increases in the power driving capability of the succeeding stage. This allows the use of a power amplifier at higher frequencies without altering or affecting the power efficiency and allows use of a digital power amplifier for a digital transmitter.
摘要翻译：用于数字发射机的数字功率放大器（或功率开关放大器或功率开关）包括具有低阻抗预驱动器和低阻抗驱动器的低阻抗多级驱动器电路。驱动电路驱动具有以当前模式D类推挽配置配置的两个功率晶体管的功率开关级。使用氮化镓（GaN）晶体管或伪像高电子迁移率晶体管（pHEMT）（或其组合）并且使得晶体管在驱动器中比在预驱动器中逐渐变大（至少约3x）使得晶体管的输出阻抗降低驱动电路和后续功率驱动能力逐渐增加。这允许在更高频率下使用功率放大器，而不改变或影响功率效率，并允许使用用于数字发射机的数字功率放大器。

8. 发明申请

US20080129382A1 High efficiency digital power amplifier 有权
标题翻译：高效率数字功率放大器
公开(公告)号：US20080129382A1
公开(公告)日：2008-06-05
申请号：US11981780
申请日：2007-10-30
申请人： Noureddine Outaleb , Adrian Bergsma , John Ilowski
发明人： Noureddine Outaleb , Adrian Bergsma , John Ilowski
IPC分类号： H03F3/217
CPC分类号： H03F3/193 , H03F3/2173 , H03F3/45
摘要： A digital power amplifier (or power switching amplifier or power switch) for use in a digital transmitter includes a low impedance multi-stage driver circuit having a low impedance pre-driver and a low impedance driver. The drive circuit drives a power switch stage having two power transistors configured in a current mode class-D push-pull configuration. Utilization of gallium nitride (GaN) transistors or pseudomorphic high electronic mobility transistors (pHEMT) (or combination thereof) and sizing the transistors progressively larger in the driver than in the pre-driver (at least about 3×) provides a reduction in output impedance of the driver circuit and progressive increases in the power driving capability of the succeeding stage. This allows the use of a power amplifier at higher frequencies without altering or affecting the power efficiency and allows use of a digital power amplifier for a digital transmitter.
摘要翻译：用于数字发射机的数字功率放大器（或功率开关放大器或功率开关）包括具有低阻抗预驱动器和低阻抗驱动器的低阻抗多级驱动器电路。驱动电路驱动具有以当前模式D类推挽配置配置的两个功率晶体管的功率开关级。使用氮化镓（GaN）晶体管或伪像高电子迁移率晶体管（pHEMT）（或其组合）并且使得晶体管在驱动器中比在预驱动器中逐渐变大（至少约3x）使得晶体管的输出阻抗降低驱动电路和后续功率驱动能力逐渐增加。这允许在更高频率下使用功率放大器，而不改变或影响功率效率，并允许使用用于数字发射机的数字功率放大器。

9. 发明申请

US20080088369A1 ENHANCED DOHERTY AMPLIFIER WITH ASYMMETRICAL SEMICONDUCTORS 失效
标题翻译：具有不对称半导体的增强型DOHERTY放大器
公开(公告)号：US20080088369A1
公开(公告)日：2008-04-17
申请号：US11537084
申请日：2006-09-29
申请人： Gregory Bowles , Martin O'Flaherty , Scott Widdowson , John Ilowski
发明人： Gregory Bowles , Martin O'Flaherty , Scott Widdowson , John Ilowski
IPC分类号： H03F3/68
CPC分类号： H03F3/245 , H03F1/0288 , H03F1/3247
摘要： The present disclosures an amplification unit which comprises a first amplifier and a second amplifier connected in parallel, the first amplifier and the second amplifier comprising semiconductor devices that are not the same amplifier design. The present application also discloses a signal input line connected to the first amplifier and the second amplifier. A signal output line is also disclosed which is connected to the first amplifier and the second amplifier.
摘要翻译：本发明公开了一种放大单元，其包括并联连接的第一放大器和第二放大器，第一放大器和第二放大器包括不同于放大器设计的半导体器件。本申请还公开了连接到第一放大器和第二放大器的信号输入线。还公开了连接到第一放大器和第二放大器的信号输出线。

10. 发明授权

US07135918B1 Linear power amplifier circuit with a modulated power supply signal 有权
标题翻译：具有调制电源信号的线性功率放大器电路
公开(公告)号：US07135918B1
公开(公告)日：2006-11-14
申请号：US10969881
申请日：2004-10-22
申请人： Noureddine Outaleb , Philip Holder , John Ilowski , Graham Dolman
发明人： Noureddine Outaleb , Philip Holder , John Ilowski , Graham Dolman
IPC分类号： H03F3/38 , H03G3/20
CPC分类号： H03F1/0211 , H03F1/0227 , H03F1/26 , H03F1/3241 , H03F3/3435 , H03F2200/102 , H03F2200/331 , H03F2200/504
摘要： A power efficient system and method for linear signal power amplification are provided. A linear power amplifier provides signal amplification from a system input to a system output and is drain-modulated with a power supply signal. An active compensation circuit generates the power supply signal, which is substantially proportional to an envelope of the system input, and provides it to the power amplifier through a low-impedance output. The active compensation circuit reduces noise in the system output spectrum.
摘要翻译：提供了一种用于线性信号功率放大的功率效率系统和方法。线性功率放大器提供从系统输入到系统输出的信号放大，并用电源信号进行漏极调制。有源补偿电路产生基本上与系统输入的包络成比例的电源信号，并通过低阻抗输出将其提供给功率放大器。有源补偿电路可以降低系统输出频谱中的噪声。

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