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    • 1. 发明授权
    • Method for forming a cavity structure on SOI substrate and cavity structure formed on SOI substrate
    • 在SOI衬底上形成腔结构的方法和在SOI衬底上形成的腔结构
    • US06930366B2
    • 2005-08-16
    • US10491193
    • 2002-09-27
    • Jyrki Kiihamäki
    • Jyrki Kiihamäki
    • B81C1/00H01L21/762H01L29/84
    • B81C1/00047B81C1/00412B81C2201/0115B81C2203/0145H01L21/76286
    • The present publication discloses a method for forming cavities in prefabricated silicon wafers comprising a first silicon layer (1), a second monocrystalline silicon layer, or a so-called structural layer (3), oriented substantially parallel with said first silicon layer (1) and an insulating layer (2) situated between said first and second layers (1, 3). According to the method, in at least one of the conducting silicon layers (1, 3) are fabricated windows (4) extending through the thickness of the layer, and cavities are etched in the insulating layer (2) by means of etchants passed to the layer via said fabricated windows (4). According to the invention, subsequent to the fabrication step of the windows (4) and prior to the etching step, a thin porous layer (5) is formed on the surface to be processed such that the etchants can be passed through said porous layer into said cavities (6) being etched and, after the cavities (6) are etched ready, at least one supplementary layer (7) is deposited in order to render to the material of said porous layer impermeable to gases.
    • 本公开公开了一种用于在预制硅晶片中形成空腔的方法,其包括基本上平行于所述第一硅层(1)取向的第一硅层(1),第二单晶硅层或所谓的结构层(3) 和位于所述第一和第二层(1,3)之间的绝缘层(2)。 根据该方法,至少一个导电硅层(1,3)是延伸穿过该层的厚度的制造窗(4),并且通过传递给绝缘层(2)的蚀刻剂在绝缘层(2)中蚀刻空腔 所述层经由所述制造的窗口(4)。 根据本发明,在窗口(4)的制造步骤之后并且在蚀刻步骤之前,在待加工的表面上形成薄的多孔层(5),使得蚀刻剂可以通过所述多孔层进入 所述腔(6)被蚀刻,并且在空腔(6)被蚀刻就绪之后,沉积至少一个辅助层(7),以使所述多孔层的材料不能透过气体。
    • 2. 发明授权
    • Micromechanical resonator array and method for manufacturing thereof
    • 微机械谐振器阵列及其制造方法
    • US08786166B2
    • 2014-07-22
    • US13209099
    • 2011-08-12
    • Antti JaakkolaTuomas PensalaJyrki Kiihamäki
    • Antti JaakkolaTuomas PensalaJyrki Kiihamäki
    • H01L41/09
    • H03H3/0072H03H3/0076H03H9/02448H03H9/2463H03H9/505H03H2009/02385H03H2009/02503H03H2009/2442
    • The invention relates to a microelectromechanical resonators and a method of manufacturing thereof. The resonator comprises at least two resonator elements made from semiconductor material, the resonator elements being arranged laterally with respect to each other as an array, at least one transducer element coupled to said resonator elements and capable of exciting a resonance mode to the resonator elements. According to the invention, said at least one transducer element is a piezoelectric transducer element arranged laterally with respect to the at least two resonator elements between the at least two resonator elements and adapted to excite to the resonator elements as said resonance mode a resonance mode whose resonance frequency is dependent essentially only on the c44 elastic parameter of the elastic modulus of the material of the resonator elements. By means of the invention, electrostatic actuation and problems associated therewith can be avoided and accurate resonators can be manufactured.
    • 本发明涉及一种微机电谐振器及其制造方法。 谐振器包括由半导体材料制成的至少两个谐振器元件,谐振器元件相对于彼此横向地布置为阵列,耦合到所述谐振器元件并能够激励谐振元件的谐振模式的至少一个换能器元件。 根据本发明,所述至少一个换能器元件是在所述至少两个谐振元件之间相对于所述至少两个谐振器元件横向布置的压电换能器元件,并且适于作为所述谐振模式激励谐振元件, 谐振频率基本上仅取决于谐振器元件的材料的弹性模量的c44弹性参数。 通过本发明,可以避免静电致动和与之相关的问题,并且可以制造精确的谐振器。
    • 4. 发明申请
    • MICROMECHANICAL RESONATOR ARRAY AND METHOD FOR MANUFACTURING THEREOF
    • 微机电谐振器阵列及其制造方法
    • US20120038431A1
    • 2012-02-16
    • US13209099
    • 2011-08-12
    • Antti JAAKKOLATuomas PENSALAJyrki KIIHAMÄKI
    • Antti JAAKKOLATuomas PENSALAJyrki KIIHAMÄKI
    • H03B5/30H01L21/77
    • H03H3/0072H03H3/0076H03H9/02448H03H9/2463H03H9/505H03H2009/02385H03H2009/02503H03H2009/2442
    • The invention relates to a microelectromechanical resonators and a method of manufacturing thereof. The resonator comprises at least two resonator elements made from semiconductor material, the resonator elements being arranged laterally with respect to each other as an array, at least one transducer element coupled to said resonator elements and capable of exciting a resonance mode to the resonator elements. According to the invention, said at least one transducer element is a piezoelectric transducer element arranged laterally with respect to the at least two resonator elements between the at least two resonator elements and adapted to excite to the resonator elements as said resonance mode a resonance mode whose resonance frequency is dependent essentially only on the c44 elastic parameter of the elastic modulus of the material of the resonator elements. By means of the invention, electrostatic actuation and problems associated therewith can be avoided and accurate resonators can be manufactured.
    • 本发明涉及一种微机电谐振器及其制造方法。 谐振器包括由半导体材料制成的至少两个谐振器元件,谐振器元件相对于彼此横向地布置为阵列,耦合到所述谐振器元件并能够激励谐振元件的谐振模式的至少一个换能器元件。 根据本发明,所述至少一个换能器元件是在所述至少两个谐振元件之间相对于所述至少两个谐振器元件横向布置的压电换能器元件,并且适于作为所述谐振模式激励谐振元件, 谐振频率基本上仅取决于谐振器元件的材料的弹性模量的c44弹性参数。 通过本发明,可以避免静电致动和与之相关的问题,并且可以制造精确的谐振器。