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1. 发明授权

US09800224B2 Electronic device, electronic apparatus, and moving object 有权
公开(公告)号：US09800224B2
公开(公告)日：2017-10-24
申请号：US15013494
申请日：2016-02-02
申请人： SEIKO EPSON CORPORATION
发明人： Kazuhiko Shimodaira , Kyo Horie
IPC分类号： H03L1/02 , H03H9/02 , H03B5/32 , H03H9/17
CPC分类号： H03H9/02448 , H01L2224/48091 , H01L2224/48465 , H03B5/32 , H03H9/02102 , H03H9/17 , H03L1/02 , H03L1/028 , H01L2924/00014 , H01L2924/00
摘要： An electronic device includes a heat generator having a terminal, a resonator which has an outer connection terminal and on which the heat generator is disposed, a first substrate having a first surface and a second surface with the resonator connected to the first surface, and a circuit part and other electronic parts disposed on the first surface or the second surface. The outer connection terminal of the resonator is connected to the first surface, and the terminal of the heat generator is connected to the second surface.

2. 发明申请

US20170201226A1 PIEZOELECTRIC VIBRATOR AND PIEZOELECTRIC VIBRATION DEVICE 审中-公开
公开(公告)号：US20170201226A1
公开(公告)日：2017-07-13
申请号：US15472576
申请日：2017-03-29
申请人： Murata Manufacturing Co., Ltd.
发明人： Ryota Kawai , Daisuke Nakamura , Toshio Nishimura
IPC分类号： H03H9/02 , H03H9/10 , H03H9/17
CPC分类号： H03H9/02448 , H03H9/02259 , H03H9/10 , H03H9/1057 , H03H9/173 , H03H9/2405 , H03H2009/155 , H03H2009/241
摘要： A piezoelectric vibrator is a piezoelectric vibrator including a vibration portion. The vibration portion has an n-type Si layer which is a degenerated semiconductor and which has a resistivity of not less than 0.5 mΩcm and not greater than 1.2 mΩcm and preferably not greater than 0.9 mΩcm.

3. 发明授权

US09695036B1 Temperature insensitive resonant elements and oscillators and methods of designing and manufacturing same 有权
公开(公告)号：US09695036B1
公开(公告)日：2017-07-04
申请号：US13759013
申请日：2013-02-04
申请人： SiTime Corporation
发明人： Renata Melamud Berger , Ginel C. Hill , Paul M. Hagelin , Charles I. Grosjean , Aaron Partridge , Joseph C. Doll , Markus Lutz
IPC分类号： H01L31/058 , H03H9/00 , B81B3/00 , H03H9/02 , H03H9/24
CPC分类号： B81B3/0024 , H03H9/02448 , H03H9/2405 , H03H9/2457
摘要： The present inventions, in one aspect, are directed to micromachined resonator comprising: a first resonant structure extending along a first axis, wherein the first axis is different from a crystal axis of silicon, a second resonant structure extending along a second axis, wherein the second axis is different from the first axis and the crystal axis of silicon and wherein the first resonant structure is coupled to the second resonant structure, and wherein the first and second resonant structures are comprised of silicon (for example, substantially monocrystalline) and include an impurity dopant (for example, phosphorus) having a concentrations which is greater than 1019 cm−3, and preferably between 1019 cm−3 and 1021 cm−3.

4. 发明授权

US09553561B2 Vibrating device and manufacturing method therfor 有权
标题翻译：振动装置及其制造方法
公开(公告)号：US09553561B2
公开(公告)日：2017-01-24
申请号：US14643286
申请日：2015-03-10
申请人： Murata Manufacturing Co., Ltd.
发明人： Keiichi Umeda , Takehiko Kishi , Toshio Nishimura , Takashi Hase
IPC分类号： H03H9/21 , H03H3/007 , H03H9/02 , H03H9/24 , H01L41/29 , H01L41/31
CPC分类号： H03H9/21 , H01L41/29 , H01L41/31 , H03H3/0072 , H03H9/02448 , H03H9/2489 , Y10T29/42
摘要： A vibrating device having vibrating arms connected to a supporter. The vibrating arms have an n-type Si layer which is a degenerated semiconductor and an exciter provided on the n-type Si layer. The exciter has a piezoelectric thin film and a first and second electrodes with the piezoelectric thin film interposed therebetween.
摘要翻译：具有连接到支撑件的振动臂的振动装置。振动臂具有作为退化半导体的n型Si层和设置在n型Si层上的激励器。励磁机具有压电薄膜和插入压电薄膜的第一和第二电极。

5. 发明授权

US09490769B1 Vertical differential resonator 有权
标题翻译：垂直差动谐振器
公开(公告)号：US09490769B1
公开(公告)日：2016-11-08
申请号：US14514096
申请日：2014-10-14
申请人： Micrel, Incorporated
发明人： Wan-Thai Hsu , Guohong He , John Ryan Clark
IPC分类号： H03H9/24 , H03H9/05 , H03H9/46 , H03H9/50 , H03H9/52 , H03H9/00 , H03B5/30 , H03H9/02
CPC分类号： H03H9/0023 , H03B5/30 , H03H9/02244 , H03H9/02259 , H03H9/02338 , H03H9/02409 , H03H9/02417 , H03H9/02448 , H03H9/2431 , H03H9/2447 , H03H9/2452 , H03H9/505 , H03H2007/008 , H03H2009/02291 , H03H2009/02354 , H03H2009/02511 , H03H2009/241
摘要： A micromechanical device includes a substrate, a micromechanical structure supported by the substrate and configured for overtone resonant vibration relative to the substrate, and a plurality of electrodes supported by the substrate and spaced from the micromechanical structure by respective gaps. The plurality of electrodes include multiple drive electrodes configured relative to the micromechanical structure to excite the overtone resonant vibration with a differential excitation signal, or multiple sense electrodes configured relative to the micromechanical structure to generate a differential output from the overtone resonant vibration.
摘要翻译：微机械装置包括衬底，由衬底支撑并被配置为相对于衬底的谐波振荡的微机械结构，以及由衬底支撑并由微机械结构通过相应的间隙间隔开的多个电极。多个电极包括相对于微机械结构构造的多个驱动电极，以利用差分激励信号激励泛音共振振动，或者相对于微机械结构配置的多个感测电极，以产生来自谐波谐振振动的差分输出。

6. 发明申请

US20160307677A1 Nanostructured Mn-Al Permanent Magnets And Method of Producing Same 审中-公开
标题翻译：纳米结构的Mn-Al永磁体及其制造方法
公开(公告)号：US20160307677A1
公开(公告)日：2016-10-20
申请号：US14128163
申请日：2012-03-20
申请人： Ian Baker , Qi Zeng
发明人： Ian Baker , Qi Zeng
IPC分类号： H01F1/08 , B22F1/00 , B22F3/24 , B22D7/00 , B22F3/20 , C22C22/00 , C22C1/02 , H01F1/047 , B22F9/04
CPC分类号： H01F1/08 , B22D7/005 , B22F1/0003 , B22F3/20 , B22F3/24 , B22F9/04 , B22F2003/202 , B22F2003/248 , B22F2009/041 , B22F2304/05 , B22F2998/10 , C22C1/02 , C22C22/00 , H01F1/047 , H03H3/0072 , H03H9/02448 , H03H9/2447 , Y10T29/42
摘要： A bulky consolidated nanostructured manganese aluminum alloy includes at least about 80% of a magnetic τ phase and having a macroscopic composition of MnXAlYDoZ, where Do is a dopant, X ranges from 52-58 atomic percent, Y ranges from 42-48 atomic percent, and Z ranges from 0 to 3 atomic percent. A method for producing a bulky nanocrystalline solid of formula MnxAlyDoz is provided. The method includes melting a mixture of metals to form a substantially homogenous solution, casting the solution to form ingots, measuring compositions of the ingots; crushing the ingots to form crushed powders, and milling the crushed powders to form nanocrystalline powders. The method further includes verifying the presence of τ phase and determining the amount of the τ phase, and simultaneously consolidating the nanocrystalline powders into a bulky nanocrystalline solid and undergoing phase transformation from ε phase to at least 80% τ phase.
摘要翻译：大体积的纳米结构锰铝合金包括至少约80％的磁性τ相并具有MnXAlYDoZ的宏观组成，其中Do是掺杂剂，X的范围为52-58原子％，Y为42-48原子％ Z范围为0〜3原子％。提供了制备式Mn x AllyDoz的大体积纳米晶体固体的方法。该方法包括熔化金属的混合物以形成基本均匀的溶液，将溶液浇铸以形成锭，测量锭的组成; 粉碎锭子以形成粉碎的粉末，并研磨粉碎的粉末以形成纳米晶体粉末。该方法还包括验证τ相的存在并确定τ相的量，并同时将纳米晶体粉末固结成体积大的纳米晶体固体并经历从ε相到至少80％τ相的相变。

7. 发明申请

US20160204759A1 RESONATION DEVICE, OSCILLATOR, ELECTRONIC APPARATUS, AND MOVING OBJECT 有权
标题翻译：谐振器，振荡器，电子设备和移动对象
公开(公告)号：US20160204759A1
公开(公告)日：2016-07-14
申请号：US14990247
申请日：2016-01-07
申请人： SEIKO EPSON CORPORATION
发明人： Masayuki KIKUSHIMA
IPC分类号： H03H9/02 , H03H9/17 , H03B5/04 , H03B5/32
CPC分类号： H03H9/02448 , H03B5/04 , H03B5/32 , H03H9/02102 , H03H9/0547 , H03H9/0552 , H03H9/1021
摘要： A resonation device includes substrate, a resonation element that is attached to first main surface of substrate at first and second attachment portion, and heat-generating unit that is disposed on second main surface which is side opposite to first main surface so as to overlap with resonation element in a planar view. When an angle formed by line which connects center of resonation element and center of first attachment portion and virtual line which connects center of heat-generating unit and center of resonation element in a planar view is θ1 and an angle formed by a line which connects center of resonation element and center of second attachment portion and virtual line which connects center of heat-generating unit and center of resonation element in a planar view is θ2, conditions 0°
摘要翻译：谐振装置包括：基板，在第一和第二安装部分附接到基板的第一主表面的谐振元件;以及发热单元，其布置在与第一主表面相反侧的第二主表面上，以与谐振元件在平面视图中。当在平面视图中将由谐振元件的中心和第一连接部分的中心和连接发热单元的中心和虚拟线的谐振元件的中心线构成的角度为＆amp; 在平面视图中连接谐振元件的中心和第二连接部分的中心和连接发热单元的中心和谐振元件的中心的虚拟线路; 2，条件0°<＆amp; t; 1 <90°，0°< ＆thetas; 2 <90°，0°<|＆thetas; 1-＆thetas; 2 | <10°。

8. 发明授权

US09319020B2 Temperature compensation in a semiconductor micromechanical resonator via charge carrier depletion 有权
标题翻译：通过电荷载流子耗尽在半导体微机械谐振器中的温度补偿
公开(公告)号：US09319020B2
公开(公告)日：2016-04-19
申请号：US13276931
申请日：2011-10-19
申请人： Farrokh Ayazi , Ashwin Samarao
发明人： Farrokh Ayazi , Ashwin Samarao
IPC分类号： H03H9/24 , H03H3/013 , H03H3/007 , H03H9/02 , B81B3/00
CPC分类号： H03H3/0076 , B81B3/0081 , B81C2201/0171 , H03H9/02448 , H03H9/2463 , H03H2009/02496 , H03H2009/2415
摘要： A semiconductor resonator has a substrate with a thickness extending between a first end and a second end and a pn-junction along the thickness of the substrate forming a free charge carrier depletion region. In another embodiment, a semiconductor resonator has a substrate with a crystal lattice doped at degenerate levels such that the flow of free charge carriers can be minimized. A method of compensating a temperature coefficient of a semiconductor resonator by creating a pn-junction based free charge carrier depletion region within a thickness of a substrate of the resonator is also disclosed.
摘要翻译：半导体谐振器具有在第一端和第二端之间延伸的厚度的衬底和沿衬底的厚度的pn结，形成自由电荷载流子耗尽区。在另一个实施例中，半导体谐振器具有在退化水平下掺杂晶格的衬底，使得自由电荷载流子的流动可以最小化。还公开了通过在共振器的衬底的厚度内产生基于pn结的自由电荷载流子耗尽区域来补偿半导体谐振器的温度系数的方法。

9. 发明授权

US09257993B2 Control of multi-temperature micro-oven for MEMS devices 有权
标题翻译：用于MEMS器件的多温度微波炉的控制
公开(公告)号：US09257993B2
公开(公告)日：2016-02-09
申请号：US13878572
申请日：2011-10-11
申请人： Satyakiran N. Munaga , Francky Catthoor
发明人： Satyakiran N. Munaga , Francky Catthoor
IPC分类号： H03L1/04 , H03H9/02 , H03H9/08
CPC分类号： H03L1/04 , H03H9/02448 , H03H9/08
摘要： Disclosed are microelectromechanical system (MEMS) devices and methods of using the same. In some embodiments, a MEMS device comprises a micro-oven comprising a MEMS oscillator configured to generate a reference signal. The device further comprises a control unit comprising at least one input node configured to receive a parameter set, where the parameter set comprises at least a first parameter indicative of a sensed ambient temperature, and where the control system is configured to (i) based on the parameter set, select from a plurality of pre-characterized operation temperatures an operation temperature for the MEMS oscillator, and (ii) generate a temperature-setting signal indicating the selected operation temperature. The device still further comprises a temperature control system communicatively coupled to the control unit and configured to (i) receive the temperature-setting signal and (ii) maintain the MEMS oscillator at the selected operation temperature.
摘要翻译：公开了微机电系统（MEMS）装置及其使用方法。在一些实施例中，MEMS装置包括微型炉，其包括被配置为产生参考信号的MEMS振荡器。所述设备还包括控制单元，所述控制单元包括被配置为接收参数集的至少一个输入节点，其中所述参数集包括指示感测到的环境温度的至少第一参数，并且其中所述控制系统被配置为（i）基于参数集合，从多个预先表征的操作温度中选择用于MEMS振荡器的操作温度，以及（ii）产生指示所选择的操作温度的温度设定信号。该装置还包括通信地耦合到控制单元并且被配置为（i）接收温度设定信号的温度控制系统和（ii）将MEMS振荡器保持在所选择的操作温度。

10. 发明申请

US20150214957A1 TEMPERATURE COMPENSATED OSCILLATOR AND CONTROL METHOD THEREOF 审中-公开
标题翻译：温度补偿振荡器及其控制方法
公开(公告)号：US20150214957A1
公开(公告)日：2015-07-30
申请号：US14219009
申请日：2014-03-19
申请人： HARMONY ELECTRONICS CORP.
发明人： Hsin-Hung LI , Shui-Yuan HSIEH
IPC分类号： H03L1/02 , B81B7/00 , H03B5/30
CPC分类号： H03L1/022 , B81B7/0087 , B81B2201/0271 , H03H9/02448 , H03H9/08 , H03H9/2452
摘要： A temperature compensated oscillator and a control method are provided. The oscillator includes a Micro Electro Mechanical Systems (MEMS) resonator group, a heating device, and a controller. The MEMS resonator group includes a first MEMS resonator and a second MEMS resonator. The first MEMS resonator outputs a main oscillation frequency according to a control signal. The second MEMS resonator outputs an auxiliary oscillation frequency according to a temperature of the second MEMS resonator. The heating device increases a temperature of the MEMS resonator group. The controller controls the heating device according to a difference between the main oscillation frequency and the auxiliary oscillation frequency. In the control method, at first, the MEMS resonator group is provided. Thereafter, a frequency difference between the main oscillation frequency and the auxiliary oscillation frequency is calculated. Then, the temperature of the MEMS resonator group is controlled according to the frequency difference.
摘要翻译：提供温度补偿振荡器和控制方法。振荡器包括微机电系统（MEMS）谐振器组，加热装置和控制器。 MEMS谐振器组包括第一MEMS谐振器和第二MEMS谐振器。第一MEMS谐振器根据控制信号输出主振荡频率。第二MEMS谐振器根据第二MEMS谐振器的温度输出辅助振荡频率。加热装置增加了MEMS谐振器组的温度。控制器根据主振荡频率和辅助振荡频率之间的差异来控制加热装置。在控制方法中，首先提供MEMS谐振器组。此后，计算主振荡频率和辅助振荡频率之间的频率差。然后，根据频率差来控制MEMS谐振器组的温度。

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