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    • 4. 发明授权
    • Semiconductor device
    • 半导体器件
    • US08072030B2
    • 2011-12-06
    • US12404545
    • 2009-03-16
    • Masayuki Sugiura
    • Masayuki Sugiura
    • H01L23/62
    • H01L29/78612H01L27/0248H01L29/42384
    • A semiconductor device, which is connected to a protected device and protects a protected device, includes a semiconductor layer provided on an insulating film; a plurality of source layers which is formed in the semiconductor layer and extends in a first direction; a plurality of drain layers which is formed in the semiconductor layer and extends along with the source layers; a plurality of body regions which is provided between the source layers and the drain layers in the semiconductor layer and extends in the first direction; and at least one body connecting part connecting the plurality of body regions, wherein a first width between the source layer and the drain layer at a first position is larger than a second width between the source layer and the drain layer at a second position, the second position is closer to the body connecting part than the first position.
    • 连接到受保护器件并保护受保护器件的半导体器件包括设置在绝缘膜上的半导体层; 多个源极层,形成在半导体层中并沿第一方向延伸; 多个漏极层,其形成在所述半导体层中并与所述源极层一起延伸; 多个体区,设置在半导体层中的源极层和漏极层之间并沿第一方向延伸; 以及连接多个体区的至少一个体连接部,其中在第一位置处的源层和漏层之间的第一宽度大于第二位置处的源极层和漏极层之间的第二宽度, 第二位置比第一位置更靠近主体连接部。
    • 7. 发明授权
    • Power amplifier
    • 功率放大器
    • US07595696B2
    • 2009-09-29
    • US11615171
    • 2006-12-22
    • Masayuki SugiuraYasuhiko Kuriyama
    • Masayuki SugiuraYasuhiko Kuriyama
    • H03F1/52
    • H03F1/52H01L27/0251H03F2200/444
    • A power amplifier including an active device having at least one heterjunction bipolar transistor based on a compound semiconductor; a diode connected between the base and the emitter of the bipolar transistor in reverse direction with respect to the base-emitter diode; a resistor connected in series between one electrode of the diode and the base of the bipolar transistor; and a bias circuit connected between the diode and the resistor, wherein the bipolar transistor includes a plurality of transistors, and each transistor is connected to the bias circuit via a resistor connected to a base of the transistor. The bias circuit may include an emitter follower circuit having a bipolar transistor.
    • 一种功率放大器,包括具有至少一个基于化合物半导体的异质结双极晶体管的有源器件; 连接在双极晶体管的基极和发射极之间相对于基极 - 发射极二极管相反的二极管的二极管; 串联连接在二极管的一个电极和双极晶体管的基极之间的电阻器; 以及连接在二极管和电阻器之间的偏置电路,其中所述双极晶体管包括多个晶体管,并且每个晶体管经由连接到所述晶体管的基极的电阻器连接到所述偏置电路。 偏置电路可以包括具有双极晶体管的射极跟随器电路。
    • 9. 发明授权
    • High-frequency power amplifier
    • 高频功率放大器
    • US06724263B2
    • 2004-04-20
    • US10281206
    • 2002-10-28
    • Masayuki Sugiura
    • Masayuki Sugiura
    • H03F304
    • H03F1/565H03F3/191
    • A high-frequency power amplifier includes a transistor which is inputted with a high-frequency signal, amplifies the high-frequency signal and outputs the same; a fundamental-signal matching circuit, one end of which is connected to an output of said transistor and which matches at least the impedance of fundamental signal in the amplified high-frequency signal and outputs the same from the other end; a power supply which supplies electric power to said transistor from a node located in an interval from the output of said transistor to said fundamental-signal matching circuit; a first inductor, one end of which is connected to said power supply; a second inductor connected in series between the other end of said first inductor and said node; and a first capacitor, one end of which is connected between said first inductor and said second inductor while the other end thereof is connected to a reference potential, said first capacitor forming a first series-resonant circuit with said second inductor and a parallel-resonant circuit with said first inductor.
    • 高频功率放大器包括输入高频信号的晶体管,放大高频信号并输出​​高频信号; 基本信号匹配电路,其一端连接到所述晶体管的输出,并且至少匹配放大的高频信号中的基波信号的阻抗并从另一端输出; 从位于从所述晶体管的输出到所述基本信号匹配电路的间隔的节点向所述晶体管供给电力的电源; 第一电感器,其一端连接到所述电源; 第二电感器,串联连接在所述第一电感器的另一端和所述节点之间; 以及第一电容器,其一端连接在所述第一电感器和所述第二电感器之间,而另一端连接到参考电位,所述第一电容器与所述第二电感器形成第一串联谐振电路,并且并联谐振 电路与所述第一电感器。