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1. 发明授权

US08451662B2 Reading memory cell history during program operation for adaptive programming 有权
公开(公告)号：US08451662B2
公开(公告)日：2013-05-28
申请号：US13040200
申请日：2011-03-03
申请人： Angelo Visconti , Mattia Robustelli , Silvia Beltrami , Laura Czeppel , Massimo Bertuccio
发明人： Angelo Visconti , Mattia Robustelli , Silvia Beltrami , Laura Czeppel , Massimo Bertuccio
IPC分类号： G11C16/04 , G11C16/06
CPC分类号： G11C16/3495 , G11C16/0483 , G11C16/10 , G11C16/3459
摘要： Subject matter disclosed herein relates to a memory device, and more particularly to write performance of a memory device.

2. 发明授权

US08274832B2 Dynamic polarization for reducing stress induced leakage current 有权
标题翻译：用于减小应力引起的漏电流的动态极化
公开(公告)号：US08274832B2
公开(公告)日：2012-09-25
申请号：US13089259
申请日：2011-04-18
申请人： Luca Chiavarone , Mattia Robustelli , Angelo Visconti
发明人： Luca Chiavarone , Mattia Robustelli , Angelo Visconti
IPC分类号： G11C7/00
CPC分类号： G11C16/10
摘要： Subject matter disclosed herein relates to non-volatile flash memory, and more particularly to a method of reducing stress induced leakage current.
摘要翻译：本文公开的主题涉及非易失性闪速存储器，更具体地，涉及一种减少应力诱发的漏电流的方法。

3. 发明授权

US07940568B1 Dynamic polarization for reducing stress induced leakage current 有权
标题翻译：用于减小应力引起的漏电流的动态极化
公开(公告)号：US07940568B1
公开(公告)日：2011-05-10
申请号：US12346472
申请日：2008-12-30
申请人： Luca Chiavarone , Mattia Robustelli , Angelo Visconti
发明人： Luca Chiavarone , Mattia Robustelli , Angelo Visconti
IPC分类号： G11C11/34
CPC分类号： G11C16/10
摘要： Subject matter disclosed herein relates to non-volatile flash memory, and more particularly to a method of reducing stress induced leakage current.
摘要翻译：本文公开的主题涉及非易失性闪速存储器，更具体地，涉及一种减少应力诱发的漏电流的方法。

4. 发明申请

US20110249501A1 DYNAMIC POLARIZATION FOR REDUCING STRESS INDUCED LEAKAGE CURRENT 有权
标题翻译：用于减少应力诱发漏电流的动态极化
公开(公告)号：US20110249501A1
公开(公告)日：2011-10-13
申请号：US13089259
申请日：2011-04-18
申请人： Luca Chiavarone , Mattia Robustelli , Angelo Visconti
发明人： Luca Chiavarone , Mattia Robustelli , Angelo Visconti
IPC分类号： G11C16/04 , G11C16/30
CPC分类号： G11C16/10
摘要： Subject matter disclosed herein relates to non-volatile flash memory, and more particularly to a method of reducing stress induced leakage current.
摘要翻译：本文公开的主题涉及非易失性闪速存储器，更具体地，涉及一种减少应力诱发的漏电流的方法。

5. 发明授权

US08705287B2 Semiconductor memory device and method of operating the same 有权
标题翻译：半导体存储器件及其操作方法
公开(公告)号：US08705287B2
公开(公告)日：2014-04-22
申请号：US13282029
申请日：2011-10-26
申请人： Seiichi Aritome , Soo Jin Wi , Angelo Visconti , Mattia Robustelli
发明人： Seiichi Aritome , Soo Jin Wi , Angelo Visconti , Mattia Robustelli
IPC分类号： G11C11/34 , G11C16/06
CPC分类号： G11C16/3459 , G11C16/06 , G11C16/3454 , G11C16/3468
摘要： A method of operating a semiconductor memory device includes performing a first program operation in order to raise threshold voltages of memory cells, performing a program verification operation for detecting fast program memory cells, each having a threshold voltage risen higher than a first sub-verification voltage from a second sub-verification voltage or lower, by using a target verification voltage and the first sub-verification voltage and the second sub-verification voltage which are sequentially lower than the target verification voltage, and performing a second program operation under a condition that an increment of each of threshold voltages of memory cells, which is lower than the target verification voltage, is greater than an increment of the threshold voltage of each of the fast program memory cells.
摘要翻译：一种操作半导体存储器件的方法包括执行第一程序操作以提高存储单元的阈值电压，执行用于检测快速程序存储单元的程序验证操作，每个程序存储单元的阈值电压升高高于第一次验证电压通过使用目标验证电压和顺序地低于目标验证电压的第一子验证电压和第二子验证电压，从第二子验证电压或更低的次级验证电压进行第二子验证电压，并且在低于目标验证电压的存储单元的每个阈值电压的增量大于每个快速程序存储单元的阈值电压的增量。

6. 发明申请

US20120224430A1 READING MEMORY CELL HISTORY DURING PROGRAM OPERATION FOR ADAPTIVE PROGRAMMING 有权
标题翻译：在自适应编程程序运行期间读取存储单元历史
公开(公告)号：US20120224430A1
公开(公告)日：2012-09-06
申请号：US13040200
申请日：2011-03-03
申请人： Angelo Visconti , Mattia Robustelli , Silvia Beltrami , Laura Czeppel , Massimo Bertuccio
发明人： Angelo Visconti , Mattia Robustelli , Silvia Beltrami , Laura Czeppel , Massimo Bertuccio
IPC分类号： G11C16/04 , G11C16/06
CPC分类号： G11C16/3495 , G11C16/0483 , G11C16/10 , G11C16/3459
摘要： Subject matter disclosed herein relates to a memory device, and more particularly to write performance of a memory device.
摘要翻译：本文公开的主题涉及存储器件，更具体地涉及写入存储器件的性能。

7. 发明申请

US20120106260A1 SEMICONDUCTOR MEMORY DEVICE AND METHOD OF OPERATING THE SAME 有权
标题翻译：半导体存储器件及其操作方法
公开(公告)号：US20120106260A1
公开(公告)日：2012-05-03
申请号：US13282029
申请日：2011-10-26
申请人： Seiichi ARITOME , Soo Jin Wi , Angelo Visconti , Mattia Robustelli
发明人： Seiichi ARITOME , Soo Jin Wi , Angelo Visconti , Mattia Robustelli
IPC分类号： G11C16/06
CPC分类号： G11C16/3459 , G11C16/06 , G11C16/3454 , G11C16/3468
摘要： A method of operating a semiconductor memory device includes performing a first program operation in order to raise threshold voltages of memory cells, performing a program verification operation for detecting fast program memory cells, each having a threshold voltage risen higher than a first sub-verification voltage from a second sub-verification voltage or lower, by using a target verification voltage and the first sub-verification voltage and the second sub-verification voltage which are sequentially lower than the target verification voltage, and performing a second program operation under a condition that an increment of each of threshold voltages of memory cells, which is lower than the target verification voltage, is greater than an increment of the threshold voltage of each of the fast program memory cells.
摘要翻译：一种操作半导体存储器件的方法包括执行第一程序操作以提高存储单元的阈值电压，执行用于检测快速程序存储单元的程序验证操作，每个程序存储单元的阈值电压升高高于第一次验证电压通过使用目标验证电压和顺序地低于目标验证电压的第一子验证电压和第二子验证电压，从第二子验证电压或更低的次级验证电压进行第二子验证电压，并且在低于目标验证电压的存储单元的每个阈值电压的增量大于每个快速程序存储单元的阈值电压的增量。

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