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1. 发明授权

US08493792B2 Programming method of non-volatile memory device 有权
标题翻译：非易失性存储器件的编程方法
公开(公告)号：US08493792B2
公开(公告)日：2013-07-23
申请号：US13309760
申请日：2011-12-02
申请人： Seiichi Aritome , Soo Jin Wi
发明人： Seiichi Aritome , Soo Jin Wi
IPC分类号： G11C16/06 , G11C11/56
CPC分类号： G11C11/5628 , G11C16/12 , G11C16/3418 , G11C16/349
摘要： A programming method includes setting the voltages of bit lines, performing a program operation, performing a program verify operation by supplying a program verify voltage and determining whether all of the memory cells of the selected page have been programmed with a target threshold voltage or higher, counting the number of passed memory cells corresponding to a number of pass bits, if, a result of the program verify operation, the program operation failed to program all of the memory cells of the selected page to the target threshold voltage or higher, and making a determination that determines whether the number of pass bits is greater than the first number of pass permission bits, and raising a voltage of a bit line coupled to a failed memory cell, if, as a result of the determination, the number of pass bits is greater than the first number of pass permission bits.
摘要翻译：一种编程方法，包括设置位线的电压，执行编程操作，通过提供编程验证电压并确定所选择的页面的所有存储单元是否已经被编程为目标阈值电压或更高，执行编程验证操作，对与多个通过位相对应的经过的存储单元的数量进行计数，如果程序验证操作的结果，程序操作不能将所选页的所有存储单元编程为目标阈值电压或更高，并且使确定通过位的数量是否大于第一数量的通过许可位，并且提高耦合到故障存储器单元的位线的电压，如果作为确定的结果，通过位的数量大于第一个通过许可位数。

2. 发明申请

US20120140566A1 PROGRAMMING METHOD OF NON-VOLATILE MEMORY DEVICE 有权
标题翻译：非易失性存储器件的编程方法
公开(公告)号：US20120140566A1
公开(公告)日：2012-06-07
申请号：US13309760
申请日：2011-12-02
申请人： Seiichi ARITOME , Soo Jin Wi
发明人： Seiichi ARITOME , Soo Jin Wi
IPC分类号： G11C16/12
CPC分类号： G11C11/5628 , G11C16/12 , G11C16/3418 , G11C16/349
摘要： A programming method includes setting the voltages of bit lines, performing a program operation, performing a program verify operation by supplying a program verify voltage and determining whether all of the memory cells of the selected page have been programmed with a target threshold voltage or higher, counting the number of passed memory cells corresponding to a number of pass bits, if, a result of the program verify operation, the program operation failed to program all of the memory cells of the selected page to the target threshold voltage or higher, and making a determination that determines whether the number of pass bits is greater than the first number of pass permission bits, and raising a voltage of a bit line coupled to a failed memory cell, if, as a result of the determination, the number of pass bits is greater than the first number of pass permission bits.
摘要翻译：一种编程方法，包括设置位线的电压，执行编程操作，通过提供编程验证电压并确定所选择的页面的所有存储单元是否已经被编程有目标阈值电压或更高，执行编程验证操作，对与多个通过位相对应的经过的存储单元的数量进行计数，如果程序验证操作的结果，程序操作不能将所选页的所有存储单元编程为目标阈值电压或更高，并且使确定通过位的数量是否大于第一数量的通过许可位，并且提高耦合到故障存储器单元的位线的电压，如果作为确定的结果，通过位的数量大于第一个通过许可位数。

3. 发明授权

US08705287B2 Semiconductor memory device and method of operating the same 有权
标题翻译：半导体存储器件及其操作方法
公开(公告)号：US08705287B2
公开(公告)日：2014-04-22
申请号：US13282029
申请日：2011-10-26
申请人： Seiichi Aritome , Soo Jin Wi , Angelo Visconti , Mattia Robustelli
发明人： Seiichi Aritome , Soo Jin Wi , Angelo Visconti , Mattia Robustelli
IPC分类号： G11C11/34 , G11C16/06
CPC分类号： G11C16/3459 , G11C16/06 , G11C16/3454 , G11C16/3468
摘要： A method of operating a semiconductor memory device includes performing a first program operation in order to raise threshold voltages of memory cells, performing a program verification operation for detecting fast program memory cells, each having a threshold voltage risen higher than a first sub-verification voltage from a second sub-verification voltage or lower, by using a target verification voltage and the first sub-verification voltage and the second sub-verification voltage which are sequentially lower than the target verification voltage, and performing a second program operation under a condition that an increment of each of threshold voltages of memory cells, which is lower than the target verification voltage, is greater than an increment of the threshold voltage of each of the fast program memory cells.
摘要翻译：一种操作半导体存储器件的方法包括执行第一程序操作以提高存储单元的阈值电压，执行用于检测快速程序存储单元的程序验证操作，每个程序存储单元的阈值电压升高高于第一次验证电压通过使用目标验证电压和顺序地低于目标验证电压的第一子验证电压和第二子验证电压，从第二子验证电压或更低的次级验证电压进行第二子验证电压，并且在低于目标验证电压的存储单元的每个阈值电压的增量大于每个快速程序存储单元的阈值电压的增量。

4. 发明申请

US20120106260A1 SEMICONDUCTOR MEMORY DEVICE AND METHOD OF OPERATING THE SAME 有权
标题翻译：半导体存储器件及其操作方法
公开(公告)号：US20120106260A1
公开(公告)日：2012-05-03
申请号：US13282029
申请日：2011-10-26
申请人： Seiichi ARITOME , Soo Jin Wi , Angelo Visconti , Mattia Robustelli
发明人： Seiichi ARITOME , Soo Jin Wi , Angelo Visconti , Mattia Robustelli
IPC分类号： G11C16/06
CPC分类号： G11C16/3459 , G11C16/06 , G11C16/3454 , G11C16/3468
摘要： A method of operating a semiconductor memory device includes performing a first program operation in order to raise threshold voltages of memory cells, performing a program verification operation for detecting fast program memory cells, each having a threshold voltage risen higher than a first sub-verification voltage from a second sub-verification voltage or lower, by using a target verification voltage and the first sub-verification voltage and the second sub-verification voltage which are sequentially lower than the target verification voltage, and performing a second program operation under a condition that an increment of each of threshold voltages of memory cells, which is lower than the target verification voltage, is greater than an increment of the threshold voltage of each of the fast program memory cells.
摘要翻译：一种操作半导体存储器件的方法包括执行第一程序操作以提高存储单元的阈值电压，执行用于检测快速程序存储单元的程序验证操作，每个程序存储单元的阈值电压升高高于第一次验证电压通过使用目标验证电压和顺序地低于目标验证电压的第一子验证电压和第二子验证电压，从第二子验证电压或更低的次级验证电压进行第二子验证电压，并且在低于目标验证电压的存储单元的每个阈值电压的增量大于每个快速程序存储单元的阈值电压的增量。

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