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1. 发明授权

US07326297B2 Device for the production of crystal rods having a defined cross-section and column-shaped polycrystallization structure by means of floating-zone continuous crystallization 有权
标题翻译：用于通过浮区连续结晶生产具有限定横截面和柱状多结晶结构的晶棒的装置
公开(公告)号：US07326297B2
公开(公告)日：2008-02-05
申请号：US10513320
申请日：2003-05-06
申请人： Nikolai V. Abrosimov , Helge Riemann
发明人： Nikolai V. Abrosimov , Helge Riemann
IPC分类号： C30B15/08
CPC分类号： C30B13/20 , C30B15/08 , C30B29/06 , Y10T117/10 , Y10T117/1052 , Y10T117/1056
摘要： The invention relates to a device for the production of crystal rods having a defined cross-section and a column-shaped polycrystalline structure by means of floating-zone continuous crystallization, comprising at least one crucible filled with crystalline material, provided with a central deviation for transporting the contents of the crucible to a growing crystal rod arranged below the crucible, whereby the central deviation plunges into the melt meniscus, also comprising means for continuously adjustable provision of crystalline material to the crucible, and means for simultaneously feeding the melt energy and adjusting the crystallization front. In order to produce crystal rods having a defined diameter and a column-shaped polycrystalline structure using heating means which are technically less complex, while at the same time guaranteeing high crystallization rates and stable phase definition, the means for simultaneously feeding the melt energy and adjusting the crystallization front on the growing crystal rod (8) is a flat induction coil (5) which has an opening, said induction coil (5) being arranged at a distance from the crucible (4) and/or being vertically moveable in relation to the crystallization front.
摘要翻译：本发明涉及一种用于通过浮区连续结晶生产具有限定横截面的晶棒和柱状多晶结构的装置，包括至少一个填充有结晶材料的坩埚，该坩埚具有中心偏差将坩埚的内容物输送到布置在坩埚下方的生长晶体杆上，由此中心偏离进入熔体弯月面，还包括用于连续调节地向坩埚提供结晶材料的装置，以及用于同时进料熔体能量和调节结晶前沿。为了制造具有规定直径的晶棒和使用技术上较不复杂的加热装置的柱状多晶结构，同时保证高结晶速率和稳定的相位定义，同时供给熔体能量并调节生长晶棒（8）上的结晶前沿是具有开口的平坦感应线圈（5），所述感应线圈（5）布置在与坩埚（4）相距一定距离处和/或可相对于结晶前沿。

2. 发明授权

US09422636B2 Method and apparatus for producing single crystals composed of semiconductor material 有权
标题翻译：用于制造由半导体材料组成的单晶的方法和装置
公开(公告)号：US09422636B2
公开(公告)日：2016-08-23
申请号：US13511751
申请日：2010-11-23
申请人： Helge Riemann , Nikolai V. Abrosimov , Joerg Fischer , Matthias Renner
发明人： Helge Riemann , Nikolai V. Abrosimov , Joerg Fischer , Matthias Renner
IPC分类号： C30B15/14 , C30B15/10 , C30B29/06
CPC分类号： C30B15/14 , C30B15/10 , C30B29/06 , Y10T117/1056
摘要： A method for producing a single crystal of semiconductor material having material properties of a zone-pulled single crystal includes providing a vessel transmissive to high frequency magnetic fields and having a granulate of a granular semiconductor material disposed therein and a first conductor disposed externally thereto. A high frequency current is supplied to a planar inductor disposed above the vessel, the planar inductor having a turn and a slit as a current supply so as to produce an open melt lake on the granulate by a temperature field at a surface of the granulate produced by thermal power of the planar inductor and a heating action of the first inductor, the melt lake being embedded in unmelted material of the granular semiconductor material and not being in contact with a wall of the vessel. A single crystal is pulled form the melt lake of the semiconductor material upwards.
摘要翻译：制造具有拉伸单晶材料性质的半导体材料的单晶的方法包括提供对高频磁场透射的容器，并且具有布置在其中的粒状半导体材料的颗粒和设置在其外部的第一导体。将高频电流供给到设置在容器上方的平面电感器，平面电感器具有转向和狭缝作为电流源，以便通过产生的颗粒的表面处的温度场在颗粒上产生开放熔融湖通过平面电感器的热功率和第一电感器的加热作用，熔融湖被嵌入颗粒状半导体材料的未熔化的材料中并且不与容器的壁接触。从半导体材料的熔融湖向上拉出单晶。

3. 发明申请

US20120285369A1 METHOD AND APPARATUS FOR PRODUCING SINGLE CRYSTALS COMPOSED OF SEMICONDUCTOR MATERIAL 有权
标题翻译：用于生产由半导体材料组成的单晶的方法和装置
公开(公告)号：US20120285369A1
公开(公告)日：2012-11-15
申请号：US13511751
申请日：2010-11-23
申请人： Helge Riemann , Nikolai V. Abrosimov , Joerg Fischer , Matthias Renner
发明人： Helge Riemann , Nikolai V. Abrosimov , Joerg Fischer , Matthias Renner
IPC分类号： C30B15/14 , C30B15/02
CPC分类号： C30B15/14 , C30B15/10 , C30B29/06 , Y10T117/1056
摘要： A method for producing a single crystal of semiconductor material having material properties of a zone-pulled single crystal includes providing a vessel transmissive to high frequency magnetic fields and having a granulate of a granular semiconductor material disposed therein and a first conductor disposed externally thereto. A high frequency current is supplied to a planar inductor disposed above the vessel, the planar inductor having a turn and a slit as a current supply so as to produce an open melt lake on the granulate by a temperature field at a surface of the granulate produced by thermal power of the planar inductor and a heating action of the first inductor, the melt lake being embedded in unmelted material of the granular semiconductor material and not being in contact with a wall of the vessel. A single crystal is pulled form the melt lake of the semiconductor material upwards.
摘要翻译：制造具有拉伸单晶材料性质的半导体材料的单晶的方法包括提供对高频磁场透射的容器，并且具有布置在其中的粒状半导体材料的颗粒和设置在其外部的第一导体。将高频电流供给到设置在容器上方的平面电感器，平面电感器具有转向和狭缝作为电流源，以便通过产生的颗粒的表面处的温度场在颗粒上产生开放熔融湖通过平面电感器的热功率和第一电感器的加热作用，熔融湖被嵌入颗粒状半导体材料的未熔化的材料中并且不与容器的壁接触。从半导体材料的熔融湖向上拉出单晶。

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