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1. 发明公开

US20230332324A1 SINGLE CRYSTAL MANUFACTURING APPARATUS AND METHOD 审中-公开
公开(公告)号：US20230332324A1
公开(公告)日：2023-10-19
申请号：US18214052
申请日：2023-06-26
申请人： NOVEL CRYSTAL TECHNOLOGY, INC.
发明人： Kimiyoshi KOSHI
IPC分类号： C30B15/08 , C30B15/00 , C30B15/14 , C30B29/16
CPC分类号： C30B15/08 , C30B15/002 , C30B15/14 , C30B29/16
摘要： A single crystal manufacturing apparatus to grow a single crystal upward from a seed crystal, the apparatus including an insulated space thermally insulated from a space outside the single crystal manufacturing apparatus, an induction heating coil placed outside the insulated space, a thermal insulation plate that divides the insulated space into a first space including a crystal growth region to grow the single crystal and a second space above the first space and includes a hole above the crystal growth region, a heating element that is placed in the second space and generates heat by induction heating using the induction heating coil to heat the inside of the insulated space, and a support shaft to vertically movably support the seed crystal from below.

2. 发明申请

US20170362738A1 METHOD FOR GROWING BETA PHASE OF GALLIUM OXIDE ([beta]-Ga2O3) SINGLE CRYSTALS FROM THE MELT CONTAINED WITHIN A METAL CRUCIBLE 审中-公开
公开(公告)号：US20170362738A1
公开(公告)日：2017-12-21
申请号：US15541764
申请日：2015-12-16
申请人： FORSCHUNGSVERBUND BERLIN E.V.
发明人： Zbigniew GALAZKA , Reinhard UECKER , Detlef KLIMM , Matthias BICKERMANN
IPC分类号： C30B29/16 , C30B15/34 , C30B15/08 , C30B17/00 , C30B11/00
CPC分类号： C30B29/16 , C30B11/005 , C30B11/006 , C30B15/08 , C30B15/20 , C30B15/34 , C30B17/00
摘要： A method for growing beta phase of gallium oxide (β-Ga2O3) single crystals from the melt contained within a metal crucible surrounded by a thermal insulation and heated by a heater. A growth atmosphere provided into a growth furnace has a variable oxygen concentration or partial pressure in such a way that the oxygen concentration reaches a growth oxygen concentration value (C2, C2′, C2″) in the concentration range (SC) of 5-100 vol. % below the melting temperature (MT) of Ga2O3 or at the melting temperature (MT) or after complete melting of the Ga2O3 starting material adapted to minimize creation of metallic gallium amount and thus eutectic formation with the metal crucible. During the crystal growth step of the β-Ga2O3 single crystal from the melt at the growth temperature (GT) the growth oxygen concentration value (C2, C2′, C2″) is maintained within the oxygen concentration range (SC).

3. 发明授权

US09553221B2 Electromagnetic casting method and apparatus for polycrystalline silicon 有权
标题翻译：多晶硅电磁铸造方法及装置
公开(公告)号：US09553221B2
公开(公告)日：2017-01-24
申请号：US13845507
申请日：2013-03-18
申请人： SUMCO CORPORATION
发明人： Koichi Maegawa , Tomohiro Onizuka , Mitsuo Yoshihara
IPC分类号： H01L31/028 , C30B29/06 , C30B13/20 , C30B15/08 , C30B28/06 , B22D11/00 , B22D11/041 , B22D11/108 , B22D11/11 , B22D11/12 , B22D11/20 , C30B28/04
CPC分类号： H01L31/028 , B22D11/001 , B22D11/041 , B22D11/108 , B22D11/11 , B22D11/1213 , B22D11/20 , C30B13/20 , C30B15/08 , C30B28/04 , C30B28/06 , C30B29/06
摘要： Disclosed is an electromagnetic casting method of polycrystalline silicon which is characterized in that polycrystalline silicon is continuously cast by charging silicon raw materials into a bottomless cold mold, melting the silicon raw materials using electromagnetic induction heating, and pulling down the molten silicon to solidify it, wherein the depth of solid-liquid interface before the start of the final solidification process is decreased by reducing a pull down rate of ingot in a final phase of steady-state casting. By adopting the method, the region of precipitation of foreign substances in the finally solidified portion of ingot can be reduced and cracking generation can be prevented upon production of a polycrystalline silicon as a substrate material for a solar cell.
摘要翻译：本发明公开了一种多晶硅的电磁铸造方法，其特征在于，通过将硅原料装入无底冷模中，通过电磁感应加热熔化硅原料，并将熔融硅固化而使多晶硅连续铸造，其中在最终凝固过程开始之前的固 - 液界面的深度通过在稳态铸造的最后阶段中通过降低锭的下拉速率来降低。通过采用该方法，可以减少在锭的最终凝固部分中异物沉淀的区域，并且在生产作为太阳能电池的基板材料的多晶硅时可以防止产生裂纹。

4. 发明申请

US20170009372A1 PRODUCING A MONO-CRYSTALLINE SHEET OF SEMICONDUCTOR MATERIAL 审中-公开
标题翻译：生产半导体材料的单晶片
公开(公告)号：US20170009372A1
公开(公告)日：2017-01-12
申请号：US15262138
申请日：2016-09-12
申请人： International Business Machines Corporation
发明人： Mikael T. BJOERK , Heike E. RIEL , Heinz SCHMID
IPC分类号： C30B15/08 , C30B11/12 , C30B11/02 , C30B11/00 , H01L31/036 , C30B29/64 , C30B21/06 , H01L31/18 , H01L31/0312 , C30B15/00 , C30B29/06
CPC分类号： C30B15/08 , C30B11/003 , C30B11/02 , C30B11/10 , C30B11/12 , C30B13/18 , C30B15/002 , C30B21/06 , C30B29/06 , C30B29/64 , H01L31/0312 , H01L31/036 , H01L31/1804 , Y02E10/547 , Y02P70/521 , Y10T117/1032
摘要： A method for producing a mono-crystalline sheet includes providing at least two aperture elements forming a gap in between; providing a molten alloy including silicon in the gap; providing a gaseous precursor medium comprising silicon in the vicinity of the molten alloy; providing a silicon nucleation crystal in the vicinity of the molten alloy; and bringing in contact said silicon nucleation crystal and the molten alloy. A device for producing a mono-crystalline sheet includes at least two aperture elements at a predetermined distance from each other, thereby forming a gap, and being adapted to be heated for holding a molten alloy including silicon by surface tension in the gap between the aperture elements; a precursor gas supply supplies a gaseous precursor medium comprising silicon in the vicinity of the molten alloy; and a positioning device for holding and moving a nucleation crystal in the vicinity of the molten alloy.
摘要翻译：一种单晶片的制造方法包括提供在其间形成间隙的至少两个孔元件; 在间隙中提供包含硅的熔融合金; 在熔融合金附近提供包含硅的气态前体介质; 在熔融合金附近提供硅成核晶体; 并使所述硅成核晶体和熔融合金接触。用于制造单晶片的装置包括彼此隔开预定距离的至少两个孔元件，从而形成间隙，并且适于被加热以在孔之间的间隙中通过表面张力保持包括硅的熔融合金元素前体气体供应在熔融合金附近供应包含硅的气态前体介质; 以及用于保持和移动熔融合金附近的成核晶体的定位装置。

5. 发明授权

US09482888B2 Magneto-optical material, Faraday rotator, and optical isolator 有权
标题翻译：磁光材料，法拉第旋转器和光隔离器
公开(公告)号：US09482888B2
公开(公告)日：2016-11-01
申请号：US13877603
申请日：2011-10-05
申请人： Shinji Makikawa , Toshiaki Watanabe , Akio Yamanaka , Hirotaka Naruse
发明人： Shinji Makikawa , Toshiaki Watanabe , Akio Yamanaka , Hirotaka Naruse
IPC分类号： G02F1/09 , C01F17/00 , G02B1/00 , G02F1/095 , C30B13/24 , C30B15/08 , C30B29/22 , G02F1/00 , H01S3/00
CPC分类号： G02F1/0955 , C01F17/0018 , C01F17/0043 , C01P2002/50 , C01P2006/60 , C30B13/24 , C30B15/08 , C30B29/22 , G02B1/00 , G02F1/0036 , H01S3/0064
摘要： It is an object of the present invention to provide a magneto-optical material containing as a main component an oxide that includes a terbium oxide and having a large Verdet constant at a wavelength in the 1.06 μm region (0.9 to 1.1 μm) and high transparency, and to provide a small-sized optical isolator suitably used in a fiber laser for a processing machine. The magneto-optical material of the present invention contains an oxide represented by Formula (I), TbxR1−x)2O3, where x satisfies 0.4≦×≦1.0 and R includes at least one element selected from the group consisting of scandium, yttrium, and lanthanoid elements other than terbium, at a content of at least 99 wt %.
摘要翻译：本发明的目的是提供一种磁光材料，其包含氧化物作为主要成分，所述氧化物包括氧化铽，并且在1.06μm区域（0.9至1.1μm）中的波长处具有较大的Verdet常数，并且高透明度并且提供适用于用于加工机器的光纤激光器中的小型光隔离器。本发明的磁光材料含有由式（I）表示的氧化物，TbxR1-x）2O3，其中x满足0.4≤x≤1.0，并且R包括选自钪，钇，和铽以外的镧系元素，含量至少为99重量％。

6. 发明授权

US08753538B2 Oxide and magneto-optical device 有权
标题翻译：氧化物和磁光设备
公开(公告)号：US08753538B2
公开(公告)日：2014-06-17
申请号：US13055608
申请日：2010-06-04
申请人： Shinji Makikawa , Toshiaki Watanabe , Akio Yamanaka , Hirotaka Naruse
发明人： Shinji Makikawa , Toshiaki Watanabe , Akio Yamanaka , Hirotaka Naruse
IPC分类号： C09K11/08 , C09K11/02
CPC分类号： C30B29/16 , C04B35/50 , C04B35/505 , C04B35/62655 , C04B35/6455 , C04B2235/3206 , C04B2235/3213 , C04B2235/3215 , C04B2235/3217 , C04B2235/3224 , C04B2235/3225 , C04B2235/3232 , C04B2235/3244 , C04B2235/3286 , C04B2235/3287 , C04B2235/3293 , C04B2235/604 , C04B2235/6581 , C04B2235/9653 , C30B11/00 , C30B13/00 , C30B15/00 , C30B15/08 , C30B29/22 , G02F1/0036 , G02F1/09
摘要： An oxide is provided that contains the oxide represented by Formula (I) as the main component thereof, that has a Verdet constant at a wavelength of 1.06 μm of at least 0.18 min/(Oe·cm), and that has a transmittance at a wavelength of 1.06 μm and for an optical length of 3 mm of at least 70%, (TbxR1-x)2O3 (I) wherein x is 0.4≦x≦1.0; R includes at least one element selected from the group consisting of scandium, yttrium, lanthanum, europium, gadolinium, ytterbium, holmium and lutetium.
摘要翻译：提供了含有以式（I）表示的氧化物作为主要成分的氧化物，其在1.06μm波长下的Verdet常数为至少0.18分钟/（Oe·cm），并且在（TbxR1-x）2O3（I），其中x为0.4

7. 发明申请

US20130222909A1 MAGNETO-OPTICAL MATERIAL, FARADAY ROTATOR, AND OPTICAL ISOLATOR 有权
标题翻译： MAGNETO-OPTICAL MATERIAL，FARADAY ROTATOR和OPTICAL ISOLATOR
公开(公告)号：US20130222909A1
公开(公告)日：2013-08-29
申请号：US13877603
申请日：2011-10-05
申请人： Shinji Makikawa , Toshiaki Watanabe , Akio Yamanaka , Hirotaka Naruse
发明人： Shinji Makikawa , Toshiaki Watanabe , Akio Yamanaka , Hirotaka Naruse
IPC分类号： G02F1/095
CPC分类号： G02F1/0955 , C01F17/0018 , C01F17/0043 , C01P2002/50 , C01P2006/60 , C30B13/24 , C30B15/08 , C30B29/22 , G02B1/00 , G02F1/0036 , H01S3/0064
摘要： It is an object of the present invention to provide a magneto-optical material containing as a main component an oxide that includes a terbium oxide and having a large Verdet constant at a wavelength in the 1.06 μm region (0.9 to 1.1 μm) and high transparency, and to provide a small-sized optical isolator suitably used in a fiber laser for a processing machine.The magneto-optical material of the present invention contains an oxide represented by Formula (I) below at a content of at least 99 wt %. (TbxR1-x)2O3 (I) (In Formula (I), x satisfies 0.4≦x≦1.0 and R includes at least one element selected from the group consisting of scandium, yttrium, and lanthanoid elements other than terbium.)
摘要翻译：本发明的目的是提供一种磁光材料，其包含氧化物作为主要成分，该氧化物包括氧化铽，并且在1.06μm区域（0.9-1.1μm）中的波长处具有较大的Verdet常数，并且高透明度并且提供适用于用于加工机器的光纤激光器中的小型光隔离器。本发明的磁光材料含有至少99重量％的由下式（I）表示的氧化物。（TbxR1-x）2O3（I）（式（I）中，x满足0.4 @ x @ 1.0，R包括选自铽，钇和铽以外的镧系元素中的至少一种元素。

8. 发明授权

US07413606B2 Method for producing crystal of fluoride 有权
标题翻译：氟化物晶体的制备方法
公开(公告)号：US07413606B2
公开(公告)日：2008-08-19
申请号：US10564283
申请日：2004-07-20
申请人： Tomohiko Satonaga , Hirohisa Kikuyama , Tsuguo Fukuda
发明人： Tomohiko Satonaga , Hirohisa Kikuyama , Tsuguo Fukuda
IPC分类号： C30B15/20
CPC分类号： C30B29/12 , C30B15/08 , C30B15/10
摘要： It is aimed at providing a fluoride crystal growing method capable of controlling a shape of the crystal by a micro-pulling-down method. Fluoride crystals in shapes depending on purposes, respectively, can be grown by adopting carbon, platinum, and iridium as crucible materials adaptable to fluorides, respectively, and by designing shapes of the crucibles taking account of wettabilities of the materials with the fluorides, respectively.
摘要翻译：本发明的目的在于提供能够通过微拉法控制晶体的形状的氟化物晶体生长方法。分别通过采用碳，铂和铱作为适用于氟化物的坩埚材料，并分别考虑到与氟化物的材料的润湿性来设计坩埚的形状，来生长取决于目的的形状的氟化物晶体。

9. 发明授权

US06565654B2 Process and apparatus for producing a planar body of an oxide single crystal 失效
公开(公告)号：US06565654B2
公开(公告)日：2003-05-20
申请号：US09897797
申请日：2001-07-02
申请人： Toshihisa Yokoyama , Masahiro Murasato , Katsuhiro Imai , Minoru Imaeda
发明人： Toshihisa Yokoyama , Masahiro Murasato , Katsuhiro Imai , Minoru Imaeda
IPC分类号： C30B2102
CPC分类号： C30B15/08 , C30B15/00 , C30B29/30 , Y10T117/10
摘要： In a process for producing a planar body of an oxide single crystal with a &mgr; pulling-down method, a shoulder portion having a larger width is grown without any polycrystal regions, cracks or crystal deteriorations in a central portion of the planar body. A raw material of the oxide single crystal is melted in a crucible. A seed crystal is contacted to a melt of the raw material near an opening of a nozzle 13 of the crucible. Then, the melt 18 is drawn from the opening by pulling down the seed crystal to form a planar body 14A. A temperature distribution of the nozzle 13 in a direction perpendicular to the drawing direction B is controlled by supplying heat to the nozzle 13 and/or by removing heat from the nozzle 13.

10. 发明授权

US06402834B1 Apparatus and method for manufacturing monocrystals 有权
标题翻译：用于制造单晶的装置和方法
公开(公告)号：US06402834B1
公开(公告)日：2002-06-11
申请号：US09485049
申请日：2000-01-31
申请人： Kunihiko Nagai , Kohei Kodaira , Hiroyuki Tanaka , Hideki Sakamoto
发明人： Kunihiko Nagai , Kohei Kodaira , Hiroyuki Tanaka , Hideki Sakamoto
IPC分类号： C30B1518
CPC分类号： C30B15/14 , C30B15/00 , C30B15/02 , C30B15/08 , C30B29/30 , Y10S117/91
摘要： In a monocrystal producing device using a pulling-down method, a raw material melt 5m is continuously supplied into a crucible 2 to grow a crystal 18 by supplying a powdery raw material 5p onto a premelt plate 3 inside an electric furnace 10 with a powdery raw material supplying device 20 and melting the powdery raw material 5p on the premelt plate 3 to generate the raw material melt 5m, and causing this raw material melt 5m to drop out inside the crucible 2. A dry air is introduced into the powdery raw material 5p inside the powdery raw material tank 6 to prevent moisture of the raw material powder 5p. A transferring tube 9 for transferring the raw material 5m is cooled to prevent the filling in the transferring tube 9 based on melting of the powdery raw material 5p. This makes it possible to produce a monocrystal having a stable chemical composition, a large diameter, and a long size at a low price.
摘要翻译：在使用下拉法的单晶体制造装置中，将原料熔体5m连续地供给到坩埚2中，通过将粉末状原料5p供给到具有粉末状原料的电炉10内的预熔融板3上，材料供给装置20，将预制熔融板3上的粉末状原料5p熔融而生成原料熔融物5m，使该原料熔融物5m从坩埚2的内部脱落。将干燥空气导入粉末状原料5p 在粉状原料罐6内部，以防止原料粉末5p的水分。用于转移原料5m的转移管9被冷却，以防止粉状原料5p熔化的填充在转移管9中。这使得可以以低价格生产具有稳定的化学组成，大直径和长尺寸的单晶。

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