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1. 发明申请

US20220033991A1 SINGLE CRYSTAL MANUFACTURING APPARATUS AND METHOD 有权
公开(公告)号：US20220033991A1
公开(公告)日：2022-02-03
申请号：US17384977
申请日：2021-07-26
申请人： NOVEL CRYSTAL TECHNOLOGY, INC.
发明人： Kimiyoshi KOSHI
IPC分类号： C30B15/08 , C30B15/00 , C30B15/14 , C30B29/16
摘要： A single crystal manufacturing apparatus to grow a single crystal upward from a seed crystal, the apparatus including an insulated space thermally insulated from a space outside the single crystal manufacturing apparatus, an induction heating coil placed outside the insulated space, a thermal insulation plate that divides the insulated space into a first space including a crystal growth region to grow the single crystal and a second space above the first space and includes a hole above the crystal growth region, a heating element that is placed in the second space and generates heat by induction heating using the induction heating coil to heat the inside of the insulated space, and a support shaft to vertically movably support the seed crystal from below.

2. 发明申请

US20190140160A1 CRYSTAL MATERIAL AND METHOD OF MANUFACTURING THE SAME 审中-公开
公开(公告)号：US20190140160A1
公开(公告)日：2019-05-09
申请号：US16079522
申请日：2017-02-24
申请人： PIEZO STUDIO INC. , TOHOKU UNIVERSITY
发明人： Akira YOSHIKAWA , Yuui YOKOTA , Yuji OHASHI , Kei KAMADA , Tetsuo KUDO , Kenji INOUE , Yasuhiro SHOJI , Yu IGARASHI , Mototaka ARAKAWA , Shunsuke KUROSAWA , Akihiro YAMAJI
IPC分类号： H01L41/187 , C30B29/34 , C30B15/08 , C01B33/24 , C01B33/26 , H01L41/41
摘要： The present invention makes clear and defines a congruent composition of a langasite-based oxide, and establishes a method of manufacturing a crystal by any desired composition of AE3ME1+a(Ga1-xAlx)3+bSi2+cO14 (AE is an alkaline-earth metal, ME is Nb or Ta, 0≤x≤1, −0.5

3. 发明授权

US10137496B2 Metal wire rod composed of iridium or iridium alloy 有权
公开(公告)号：US10137496B2
公开(公告)日：2018-11-27
申请号：US15125491
申请日：2015-03-23
申请人： TANAKA KIKINZOKU KOGYO K.K.
发明人： Akira Yoshikawa , Yuui Yokota , Muneki Nakamura , Kunihiro Tanaka , Tatsuya Nakazawa , Koichi Sakairi
IPC分类号： C22C5/04 , C30B15/08 , C30B29/02 , C30B29/52 , B22D11/00 , C22C1/02 , C22F1/18 , B22D11/11 , B22D21/00
摘要： The present invention provides a metal wire rod composed of iridium or an iridium alloy, wherein the number of crystal grains on any cross-section in a longitudinal direction is 2 to 20 per 0.25 mm2, and the Vickers hardness at any part is 200 Hv or more and less than 400 Hv. The iridium wire rod is a material which is produced by a μ-PD method, and has low residual stress and which has a small change in the number of crystal grains and hardness even when heated to a temperature equal to or higher than a recrystallization temperature (1200° C. to 1500° C.). The metal wire rod of the present invention is excellent in oxidative consumption resistance under a high-temperature atmosphere, and mechanical properties.

4. 发明授权

US09410266B2 Process for producing multicrystalline silicon ingots by the induction method, and apparatus for carrying out the same 有权
标题翻译：通过感应方法制造多晶硅锭的方法，以及用于进行该方法的装置
公开(公告)号：US09410266B2
公开(公告)日：2016-08-09
申请号：US14583141
申请日：2014-12-25
申请人： Sergii Beringov , Volodymyr Onischenko , Anatoliy Shkulkov , Yurii Cherpak , Sergii Pozigun , Stepan Marchenko , Andrii Shevchuk
发明人： Sergii Beringov , Volodymyr Onischenko , Anatoliy Shkulkov , Yurii Cherpak , Sergii Pozigun , Stepan Marchenko , Andrii Shevchuk
IPC分类号： C30B15/08 , C30B28/06 , C30B29/06 , C30B30/04 , C30B35/00 , C30B11/00
CPC分类号： C30B28/06 , B22D27/02 , B22D27/045 , C01B33/037 , C30B11/003 , C30B11/006 , C30B29/06 , C30B30/04 , C30B35/005
摘要： An apparatus and continuous stable process for producing multicrystalline silicon ingots with large cross-sections by an induction method, by maintaining surface temperature of the ingot at the output of the crucible within the range of 900-1150° C., and by heating the ingot at the output of the upper zone of the controlled cooling compartment to a temperature of 1200-1250° C., followed by cooling of the ingot at a rate of no more than 10° C./cm.
摘要翻译：通过感应方法生产具有大截面的多晶硅锭的装置和连续稳定的方法，通过将坩埚的输出处的晶锭的表面温度保持在900-1150℃的范围内，并且通过加热锭在受控冷却室的上部区域的输出处于1200-1250℃的温度下，然后以不超过10℃/ cm的速度冷却锭。

5. 发明授权

US08956454B2 Method and device for producing material having a monocrystalline or multicrystalline structure 有权
标题翻译：用于生产具有单晶或多晶结构的材料的方法和装置
公开(公告)号：US08956454B2
公开(公告)日：2015-02-17
申请号：US14110478
申请日：2012-03-21
申请人： Rupert Köckeis
发明人： Rupert Köckeis
IPC分类号： C30B15/02 , C30B15/14 , C30B15/08 , C30B28/10
CPC分类号： C30B15/14 , C30B15/08 , C30B28/10 , Y10S117/91 , Y10T117/1004 , Y10T117/1068
摘要： According to the invention, a device and a method for producing materials having a monocrystalline or multicrystalline structure are provided, in which a container is arranged between two pressure regions and the setting of the height of the melt in the container takes place via the setting of the differential pressure between the pressure regions. As a result, even particulate material can be fed continuously to the container and melted uniformly. Delivery material with high purity can also be pulled out of the container.
摘要翻译：根据本发明，提供了一种用于生产具有单晶或多晶体结构的材料的装置和方法，其中容器布置在两个压力区域之间，并且容器中熔体的高度的设定通过设置压力区域之间的压差。结果，即使颗粒材料可以连续地供给到容器中并且均匀地熔化。高纯度的输送材料也可以从容器中拉出。

6. 发明授权

US08933408B2 Colquiriite-type crystal, scintillator for neutron detection and neutron detector 有权
标题翻译： Colquiriite型晶体，用于中子检测的闪烁体和中子检测器
公开(公告)号：US08933408B2
公开(公告)日：2015-01-13
申请号：US13820175
申请日：2011-11-01
申请人： Sumito Ishizu , Kentaro Fukuda , Noriaki Kawaguchi , Akira Yoshikawa , Takayuki Yanagida , Yui Yokota , Yutaka Fujimoto
发明人： Sumito Ishizu , Kentaro Fukuda , Noriaki Kawaguchi , Akira Yoshikawa , Takayuki Yanagida , Yui Yokota , Yutaka Fujimoto
IPC分类号： G01T1/20 , G01T3/06 , C09K11/77 , C30B15/00 , C30B15/08 , C30B29/12
CPC分类号： G01T3/06 , C09K11/7721 , C30B15/00 , C30B15/08 , C30B29/12
摘要： [Problems to be Solved] A colquiriite-type crystal preferred for a scintillator for neutron detection, which has high sensitivity to neutron and which is reduced in background noise attributed to γ rays; a scintillator for neutron detection which comprises this crystal; and a neutron detector are provided.[Means to Solve the Problems] A colquiriite-type crystal represented by the chemical formula LiM1M2X6, such as LiCaAlF6, containing Na and Ce, for example, the colquiriite-type crystal containing at least one alkali metal element selected from the group consisting of Na, K, Rb and Cs, and a lanthanoid element selected from the group consisting of Ce, Pr and Nd, and having an isotopic ratio of 6Li of 20 mol % or more, preferably 50 mol % or more; a scintillator for neutron detection comprising the colquiriite-type crystal; and a neutron detector.
摘要翻译： [待解决的问题]优选用于中子检测用闪烁体的colquiriite型晶体，其具有对中子的高灵敏度并且归因于γ射线的背景噪声降低; 包含该晶体的中子检测用闪烁体; 并提供中子检测器。解决问题的方法由化学式LiM1M2X6表示的含有Na和Ce的LiCaAlF6的扁桃体型晶体，例如含有选自Na中的至少一种碱金属元素的扁桃体型晶体，K，Rb和Cs，以及选自Ce，Pr和Nd的镧系元素，同位素比为6Li为20摩尔％以上，优选为50摩尔％以上。一种用于中子检测的闪烁体，其包括该共挤出型晶体; 和中子探测器。

7. 发明申请

US20110061587A1 METHOD OF PRODUCING PRETREATED METAL FLUORIDES AND FLUORIDE CRYSTALS 审中-公开
标题翻译：生产预浸金属氟化物和氟化物晶体的方法
公开(公告)号：US20110061587A1
公开(公告)日：2011-03-17
申请号：US12992783
申请日：2009-05-15
申请人： Sumito Ishizu , Akira Sekiya , Kentaro Fukuda , Toshihisa Suyama
发明人： Sumito Ishizu , Akira Sekiya , Kentaro Fukuda , Toshihisa Suyama
IPC分类号： C30B15/08 , C30B15/00 , C01F17/00
CPC分类号： C01B9/08 , C01F17/0031 , C01G1/06 , C01P2002/84 , C01P2002/85 , C01P2004/04 , C01P2006/80 , C30B15/00 , C30B15/08 , C30B29/12 , C30B35/007
摘要： [Problem] To provide a method of producing a pretreated metal fluoride containing impurities such as oxygen in decreased amounts and a fluoride crystal containing impurities such as oxygen in decreased amounts and having excellent optical properties such as transparency.[Means for Solution] A metal fluoride is heated in a temperature range of not lower than 300° K. but not higher than 1780° K in the co-presence of a carbonyl fluoride of an amount of not less than 1/100 mol per mol of the metal fluoride to thereby obtain a pretreated metal fluoride while removing oxygen and water from the starting metal fluoride and from the interior of the production furnace. Further, the pretreated metal fluoride as a starting material is heated and melted, and a fluoride crystal of a high quality is obtained from the obtained melt by a crystal growing method such as a melt pull-up method or a melt pull-down method.
摘要翻译：提供一种以减少量生产含有诸如氧等杂质的预处理金属氟化物的方法和含有少量杂质的氟化物晶体，并且具有优异的光学性能如透明度的方法。 [解决方案]金属氟化物在不低于300°K的温度范围内加热，但不高于1780°K，在不少于1/100mol / 摩尔的金属氟化物，从而得到预处理的金属氟化物，同时从起始金属氟化物和生产炉内部除去氧和水。此外，将作为起始原料的预处理的金属氟化物加热熔融，并通过熔融拉拔法或熔融拉拔法等晶体生长法从所得熔体中获得高质量的氟化物晶体。

8. 发明授权

US07326297B2 Device for the production of crystal rods having a defined cross-section and column-shaped polycrystallization structure by means of floating-zone continuous crystallization 有权
标题翻译：用于通过浮区连续结晶生产具有限定横截面和柱状多结晶结构的晶棒的装置
公开(公告)号：US07326297B2
公开(公告)日：2008-02-05
申请号：US10513320
申请日：2003-05-06
申请人： Nikolai V. Abrosimov , Helge Riemann
发明人： Nikolai V. Abrosimov , Helge Riemann
IPC分类号： C30B15/08
CPC分类号： C30B13/20 , C30B15/08 , C30B29/06 , Y10T117/10 , Y10T117/1052 , Y10T117/1056
摘要： The invention relates to a device for the production of crystal rods having a defined cross-section and a column-shaped polycrystalline structure by means of floating-zone continuous crystallization, comprising at least one crucible filled with crystalline material, provided with a central deviation for transporting the contents of the crucible to a growing crystal rod arranged below the crucible, whereby the central deviation plunges into the melt meniscus, also comprising means for continuously adjustable provision of crystalline material to the crucible, and means for simultaneously feeding the melt energy and adjusting the crystallization front. In order to produce crystal rods having a defined diameter and a column-shaped polycrystalline structure using heating means which are technically less complex, while at the same time guaranteeing high crystallization rates and stable phase definition, the means for simultaneously feeding the melt energy and adjusting the crystallization front on the growing crystal rod (8) is a flat induction coil (5) which has an opening, said induction coil (5) being arranged at a distance from the crucible (4) and/or being vertically moveable in relation to the crystallization front.
摘要翻译：本发明涉及一种用于通过浮区连续结晶生产具有限定横截面的晶棒和柱状多晶结构的装置，包括至少一个填充有结晶材料的坩埚，该坩埚具有中心偏差将坩埚的内容物输送到布置在坩埚下方的生长晶体杆上，由此中心偏离进入熔体弯月面，还包括用于连续调节地向坩埚提供结晶材料的装置，以及用于同时进料熔体能量和调节结晶前沿。为了制造具有规定直径的晶棒和使用技术上较不复杂的加热装置的柱状多晶结构，同时保证高结晶速率和稳定的相位定义，同时供给熔体能量并调节生长晶棒（8）上的结晶前沿是具有开口的平坦感应线圈（5），所述感应线圈（5）布置在与坩埚（4）相距一定距离处和/或可相对于结晶前沿。

9. 发明授权

US5690734A Single crystal growing method 失效
标题翻译：单晶生长法
公开(公告)号：US5690734A
公开(公告)日：1997-11-25
申请号：US616525
申请日：1996-03-19
申请人： Minoru Imaeda , Akihiko Honda , Katsuhiro Imai , Yuichiro Imanishi , Nobuyuki Kokune , Shoji Sogo , Kazuaki Yamaguchi , Tetsuo Taniuchi
发明人： Minoru Imaeda , Akihiko Honda , Katsuhiro Imai , Yuichiro Imanishi , Nobuyuki Kokune , Shoji Sogo , Kazuaki Yamaguchi , Tetsuo Taniuchi
IPC分类号： C30B15/00 , C30B15/08 , C30B15/02
CPC分类号： C30B15/08 , C30B15/00 , C30B29/30 , Y10T117/1004 , Y10T117/1008 , Y10T117/1032 , Y10T117/1056 , Y10T117/1064
摘要： A process is disclosed for continuously producing a single crystal by drawing downwardly a melt of a single crystal raw material, wherein a single crystal body grown from the melt is continuously pulled downwardly, and a plurality of single crystal products are continuously formed by intermittently cutting the single crystal body being downwardly moved.
摘要翻译：公开了一种通过向下拉下单晶原料的熔体来连续生产单晶的方法，其中从熔体生长的单晶体被连续地向下拉，并且通过间歇切割连续形成多个单晶产物单晶体向下移动。

10. 发明授权

US4603034A Crystal growing system 失效
标题翻译：水晶生长系统
公开(公告)号：US4603034A
公开(公告)日：1986-07-29
申请号：US367626
申请日：1982-04-12
申请人： Earle R. Vickery, III
发明人： Earle R. Vickery, III
IPC分类号： C30B15/08 , C30B15/14 , C30B15/24 , C30B15/10
CPC分类号： C30B15/08 , C30B15/14 , C30B15/24 , Y10S117/91 , Y10T117/1044 , Y10T117/1068
摘要： System for formation of a mineral crystal having a regular cross-sectional shape, including a crucible, a mass of crystal nutrient melt in the crucible, and a cooling element which defines a growing zone on the surface of the nutrient melt.
摘要翻译：用于形成具有规则横截面形状的矿物晶体的系统，包括坩埚，坩埚中的晶体营养物质的块体，以及限定营养物质熔融物表面上的生长区域的冷却元件。

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