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1. 发明授权

US09627578B2 Epitaxial wafer for light-emitting diodes 有权
公开(公告)号：US09627578B2
公开(公告)日：2017-04-18
申请号：US13807608
申请日：2011-07-04
申请人： Noriyoshi Seo , Atsushi Matsumura , Ryouichi Takeuchi
发明人： Noriyoshi Seo , Atsushi Matsumura , Ryouichi Takeuchi
IPC分类号： H01L29/06 , H01L33/06 , A01G7/04 , H01L33/30 , H01L33/12 , H01L33/16
CPC分类号： H01L33/06 , A01G7/045 , H01L33/12 , H01L33/16 , H01L33/30 , Y02P60/149
摘要： The present invention relates to an epitaxial wafer for a light-emitting diode wherein the peak emission wavelength is 655 nm or more, and it is possible to improve reliability. The epitaxial wafer for light-emitting diodes includes a GaAs substrate (1) and a pn-junction type light-emitting unit (2) provided on the GaAs substrate (1), wherein light-emitting unit (2) is formed as a multilayer structure in which a strained light-emitting layer and a barrier layer are alternately stacked, and the composition formula of the barrier layer is (AlXGa1-X)YIn1-YP (0.3≦X≦0.7, 0.51≦Y≦0.54).

2. 发明授权

US09184345B2 Light emitting diode and light emitting diode lamp 有权
标题翻译：发光二极管和发光二极管灯
公开(公告)号：US09184345B2
公开(公告)日：2015-11-10
申请号：US13809294
申请日：2011-07-08
申请人： Noriyoshi Seo , Atsushi Matsumura , Ryouichi Takeuchi
发明人： Noriyoshi Seo , Atsushi Matsumura , Ryouichi Takeuchi
IPC分类号： H01L33/30 , H01L33/06 , A01G9/26 , H01L33/12 , H01L33/40
CPC分类号： H01L33/30 , A01G9/26 , H01L33/06 , H01L33/12 , H01L33/405 , H01L2224/45144 , H01L2224/48091 , H01L2224/48465 , H01L2224/49107 , H01L2224/73265 , H01L2924/12032 , Y02A40/274 , H01L2924/00014 , H01L2924/00
摘要： A light emitting diode is provided by the present invention which includes a pn junction-type light emitting unit having a light emitting layer (10) composed of n layers of a strained light emitting layer (12) and n−1 layers of a barrier layer (13), wherein when a barrier layer exists, the light emitting layer (10) has a structure in which one strained light emitting layer (12) and one barrier layer (13) are laminated alternately, n represents an integer of 1 to 7, and the thickness of the light emitting layer (10) is not more than 250 nm.
摘要翻译：本发明提供一种发光二极管，其包括具有由n层应变发光层（12）构成的发光层（10）的pn结型发光单元和n层的阻挡层（13），其中当存在阻挡层时，发光层（10）具有其中一个应变发光层（12）和一个阻挡层（13）交替层叠的结构，n表示1至7的整数，并且发光层（10）的厚度不大于250nm。

3. 发明申请

US20120305890A1 LIGHT-EMITTING DIODE, LIGHT-EMITTING DIODE LAMP AND LIGHTING DEVICE 有权
标题翻译：发光二极管，发光二极管灯和照明装置
公开(公告)号：US20120305890A1
公开(公告)日：2012-12-06
申请号：US13574894
申请日：2011-01-20
申请人： Noriyuki Aihara , Noriyoshi Seo , Noritaka Muraki
发明人： Noriyuki Aihara , Noriyoshi Seo , Noritaka Muraki
IPC分类号： H01L33/04
CPC分类号： H01L33/06 , H01L33/10 , H01L33/30 , H01L2224/45144 , H01L2224/48091 , H01L2224/73265 , H01L2924/12032 , H01L2924/00014 , H01L2924/00
摘要： A light-emitting diode, including a light emitting section including an active layer having a quantum well structure in which well layers having the composition: (InX1Ga1-X1)As (0≦X1≦1) and barrier layers having the composition: (AlX2Ga1-X2)As (0≦X2≦1) are alternately laminated, first guide and second guide layers paired to sandwich the active layer and having the composition: (AlX3Ga1-X3)As (0≦X3≦1), and first cladding and second cladding layers paired to sandwich the active layer via the first guide layer and the second guide layer, respectively; a current diffusion layer formed on the light emitting section; and a functional substrate bonded to the current diffusion layer; wherein the first cladding layer and the second cladding layer have the composition: (AlX4Ga1-X4)YIn1-YP (0≦X4≦1, 0
摘要翻译：一种发光二极管，包括具有量子阱结构的有源层的发光部分，其中具有组成为（InX1Ga1-X1）As（0＆n1E; X1＆n1E; 1）的阱层和具有组成为（AlX 2 Ga 1 -X2）As（0＆nlE; X2＆nlE; 1）交替层叠，第一引导层和第二引导层成对夹持有源层，并具有以下成分：（AlX 3 Ga 1-x 3）As（0＆lt; N 1; X 3＆配对的第二包层分别经由第一引导层和第二引导层夹持有源层; 形成在发光部上的电流扩散层; 以及键合到所述电流扩散层的功能性基板; 其特征在于，所述第一包层和所述第二包层的组成如下：（AlX 4 Ga 1-X 4）Y In 1-Y P（0＆nl E; X 4＆lt; 1; 0

4. 发明授权

US08901584B2 Light emitting diode, light emitting diode lamp and illuminating device 有权
标题翻译：发光二极管，发光二极管灯和照明装置
公开(公告)号：US08901584B2
公开(公告)日：2014-12-02
申请号：US13255209
申请日：2010-03-03
申请人： Noriyoshi Seo , Atsushi Matsumura , Ryouichi Takeuchi
发明人： Noriyoshi Seo , Atsushi Matsumura , Ryouichi Takeuchi
IPC分类号： H01L33/00 , H01L23/00 , H01L33/12 , H01L33/30 , F21V7/00 , F21Y105/00 , F21Y101/02 , F21V7/09 , H01L33/08 , H01L33/20
CPC分类号： H01L33/30 , F21V7/0083 , F21V7/09 , F21Y2105/10 , F21Y2115/10 , H01L24/06 , H01L33/06 , H01L33/08 , H01L33/12 , H01L33/20 , H01L2224/05554 , H01L2224/05555 , H01L2224/0603 , H01L2224/45144 , H01L2224/48091 , H01L2224/49107 , H01L2224/73265 , H01L2924/01322 , H01L2924/10158 , H01L2924/12032 , H01L2924/12036 , H01L2924/12041 , H01L2924/12042 , H01L2924/181 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： A light emitting diode including a compound semiconductor layer having at least a pn junction-type light emitting unit and a strain adjustment layer stacked on the light emitting unit, wherein the light emitting unit has a stacked structure containing a strained light emitting layer having a composition formula of (AlXGa1-X)YIn1-YP (wherein X and Y are numerical values that satisfy 0≦X≦0.1 and 0.39≦Y≦0.45 respectively) and a barrier layer, and the strain adjustment layer is transparent to the emission wavelength and has a lattice constant that is smaller than the lattice constants of the strained light emitting layer and the barrier layer. The light emitting diode has an emission wavelength of not less than 655 nm, exhibits excellent monochromaticity, high output and/or high efficiency, and has a fast response speed.
摘要翻译：一种发光二极管，其包括具有至少pn结型发光单元的化合物半导体层和堆叠在所述发光单元上的应变调整层，其中所述发光单元具有包含具有组成的应变发光层的堆叠结构（AlXGa1-X）YIn1-YP（其中X和Y分别为满足0＆nlE; X＆lt; ll; 0.1和0.39＆nlE; Y＆nlE; 0.45的数值）和阻挡层，并且应变调节层对于发射波长是透明的并且具有小于应变发光层和阻挡层的晶格常数的晶格常数。发光二极管具有不小于655nm的发射波长，显示出优异的单色性，高输出和/或高效率，并且具有快速的响应速度。

5. 发明申请

US20120168717A1 LIGHT EMITTING DIODE, LIGHT EMITTING DIODE LAMP, AND ILLUMINATING APPARATUS 有权
标题翻译：发光二极管，发光二极管灯和照明装置
公开(公告)号：US20120168717A1
公开(公告)日：2012-07-05
申请号：US13496083
申请日：2010-09-15
申请人： Noriyuki Aihara , Noriyoshi Seo , Noritaka Muraki , Ryouichi Takeuchi
发明人： Noriyuki Aihara , Noriyoshi Seo , Noritaka Muraki , Ryouichi Takeuchi
IPC分类号： H01L33/06
CPC分类号： H01L33/06 , H01L24/45 , H01L33/0079 , H01L33/12 , H01L33/14 , H01L33/30 , H01L2224/05554 , H01L2224/05555 , H01L2224/32225 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/48465 , H01L2224/49107 , H01L2224/73265 , H01L2924/10158 , H01L2924/12041 , H01L2924/12042 , H01L2924/181 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： Disclosed is a light-emitting diode, which has a red and infrared emitting wavelength, excellent monochromatism characteristics, and high output and high efficiency and excellent humidity resistance. The light-emitting diode is provided with: a light-emitting section, which includes an active layer having a quantum well structure and formed by laminating alternately a well layer which comprises a composition expressed by the composition formula of (AlX1Ga1-X1)As (0≦X1≦1) and a barrier layer which comprises a composition expressed by the composition formula of (AlX2Ga1-X2)As (0
摘要翻译：公开了一种发光二极管，其具有红色和红外发射波长，优异的单色特性，高输出和高效率以及优异的耐湿性。发光二极管设置有：发光部，其包括具有量子阱结构的有源层，并且交替地层叠由包含由（AlX1Ga1-X1）As（式中， 0＆lt; X1＆nlE; 1）和包含由组成式表示的组成式（Al x 2 Ga 1-x 2）As（0

6. 发明申请

US20120007114A1 LIGHT EMITTING DIODE, LIGHT EMITTING DIODE LAMP AND ILLUMINATING DEVICE 有权
标题翻译：发光二极管，发光二极管灯和照明装置
公开(公告)号：US20120007114A1
公开(公告)日：2012-01-12
申请号：US13255209
申请日：2010-03-03
申请人： Noriyoshi Seo , Atsushi Matsumura , Ryouichi Takeuchi
发明人： Noriyoshi Seo , Atsushi Matsumura , Ryouichi Takeuchi
IPC分类号： H01L33/30
CPC分类号： H01L33/30 , F21V7/0083 , F21V7/09 , F21Y2105/10 , F21Y2115/10 , H01L24/06 , H01L33/06 , H01L33/08 , H01L33/12 , H01L33/20 , H01L2224/05554 , H01L2224/05555 , H01L2224/0603 , H01L2224/45144 , H01L2224/48091 , H01L2224/49107 , H01L2224/73265 , H01L2924/01322 , H01L2924/10158 , H01L2924/12032 , H01L2924/12036 , H01L2924/12041 , H01L2924/12042 , H01L2924/181 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： A light emitting diode including a compound semiconductor layer having at least a pn junction-type light emitting unit and a strain adjustment layer stacked on the light emitting unit, wherein the light emitting unit has a stacked structure containing a strained light emitting layer having a composition formula of (AlXGa1-X)YIn1-YP (wherein X and Y are numerical values that satisfy 0≦X≦0.1 and 0.39≦Y≦0.45 respectively) and a barrier layer, and the strain adjustment layer is transparent to the emission wavelength and has a lattice constant that is smaller than the lattice constants of the strained light emitting layer and the barrier layer. The light emitting diode has an emission wavelength of not less than 655 nm, exhibits excellent monochromaticity, high output and/or high efficiency, and has a fast response speed.
摘要翻译：一种发光二极管，其包括具有至少pn结型发光单元的化合物半导体层和堆叠在所述发光单元上的应变调整层，其中所述发光单元具有包含具有组成的应变发光层的堆叠结构（AlXGa1-X）YIn1-YP（其中X和Y分别为满足0＆nlE; X＆lt; ll; 0.1和0.39＆nlE; Y＆nlE; 0.45的数值）和阻挡层，并且应变调节层对于发射波长是透明的并且具有小于应变发光层和阻挡层的晶格常数的晶格常数。发光二极管具有不小于655nm的发射波长，显示出优异的单色性，高输出和/或高效率，并且具有快速的响应速度。

7. 发明授权

US09318673B2 Light-emitting diode and light-emitting diode lamp 有权
标题翻译：发光二极管和发光二极管灯
公开(公告)号：US09318673B2
公开(公告)日：2016-04-19
申请号：US13817226
申请日：2011-08-16
申请人： Noriyoshi Seo , Atsushi Matsumura
发明人： Noriyoshi Seo , Atsushi Matsumura
IPC分类号： H01L33/60 , H01L33/30 , H01L33/40 , H01L33/12 , H01L33/00 , H01L33/64 , H01L33/38
CPC分类号： H01L33/60 , H01L33/0079 , H01L33/12 , H01L33/30 , H01L33/38 , H01L33/405 , H01L33/641 , H01L2224/45144 , H01L2224/48091 , H01L2224/73265 , H01L2924/00014 , H01L2924/00
摘要： The present invention relates to a light-emitting diode which has an emission wavelength of 655 nm or more, excellent monochromatic properties, high output, high luminance, high efficiency and fast response time, has such a characteristic that the intensity of light emitted from a light extraction surface and traveling in a direction perpendicular to the light extraction surface has high directivity, and can release heat to the outside with high efficiency; and a light-emitting diode lamp. The light-emitting diode includes a compound semiconductor layer (11) which includes at least a pn-junction-type light-emitting section (3) and a strain adjustment layer (13) laminated on the light-emitting section (3); wherein the light-emitting section (3) has a laminated structure composed of a strained light-emitting layer having a composition formula (AlXGa1-X)YIn1-YP (0≦X≦0.1, 0.37≦Y≦0.46) and a barrier layer, wherein the strain adjustment layer (13) can be penetrated by light from the light-emitting section (3) and has a smaller lattice constant than those of the strained light-emitting layer and the barrier layer; and wherein a functional substrate (5) is bonded to a surface (11b) of the compound semiconductor layer (11) which is located on the opposite side with respect to the light extraction surface (11a) through a reflective structure (4).
摘要翻译：本发明涉及发射波长为655nm以上的发光二极管，具有出色的单色特性，高输出，高亮度，高效率，快速响应时间等特点，具有以下特征：光提取面在与光提取面垂直的方向上行进，具有高方向性，能够高效地向外部释放热量; 和发光二极管灯。发光二极管包括至少包含pn结型发光部分（3）和层压在发光部分（3）上的应变调节层（13）的化合物半导体层（11）。其特征在于，所述发光部（3）具有由具有组成式（AlXGa1-X）YIn1-YP（0＆amp; nlE; X＆lt; ll; 0.1,0.37＆amp; nlE; Y＆lt; ll; 0.46）的应变发光层和阻挡层层，其中应变调节层（13）可以被来自发光部（3）的光穿透，并且具有比应变发光层和阻挡层的晶格常数更小的晶格常数; 并且其中通过反射结构（4）将功能性基板（5）结合到位于相对于所述光提取表面（11a）的相对侧的化合物半导体层（11）的表面（11b）。

8. 发明授权

US08482027B2 Epitaxial wafer for light emitting diode 有权
标题翻译：用于发光二极管的外延晶片
公开(公告)号：US08482027B2
公开(公告)日：2013-07-09
申请号：US13255166
申请日：2010-02-24
申请人： Noriyoshi Seo , Atsushi Matsumura , Ryouichi Takeuchi
发明人： Noriyoshi Seo , Atsushi Matsumura , Ryouichi Takeuchi
IPC分类号： H01L33/00 , H01L21/00
CPC分类号： H01L33/12 , H01L33/30
摘要： An epitaxial wafer for a light emitting diode, including a GaAs substrate, a light emitting unit provided on the GaAs substrate, and a strain adjustment layer provided on the light emitting unit, wherein the light emitting unit has a strained light emitting layer having a composition formula of (AlXGa1-X)YIn1-YP (wherein X and Y are numerical values that satisfy 0≦X≦0.1 and 0.39≦Y≦0.45 respectively), and the strain adjustment layer is transparent to the emission wavelength and has a lattice constant that is smaller than the lattice constant of the GaAs substrate. The invention provides an epitaxial wafer that enables mass production of a high-output and/or high-efficiency LED having an emission wavelength of not less than 655 nm.
摘要翻译：一种用于发光二极管的外延晶片，包括GaAs衬底，设置在GaAs衬底上的发光单元和设置在发光单元上的应变调节层，其中发光单元具有具有组成的应变发光层（AlXGa1-X）YIn1-YP（其中X和Y分别为满足0 @ X @ 0.1和0.39 @ Y @ 0.45的数值），并且应变调节层对于发射波长透明并且具有晶格常数小于GaAs衬底的晶格常数。本发明提供一种外延晶片，其能够批量生产具有不小于655nm的发射波长的高输出和/或高效率LED。

9. 发明申请

US20130112999A1 LIGHT EMITTING DIODE AND LIGHT EMITTING DIODE LAMP 有权
标题翻译：发光二极管和发光二极管灯
公开(公告)号：US20130112999A1
公开(公告)日：2013-05-09
申请号：US13809294
申请日：2011-07-08
申请人： Noriyoshi Seo , Atsushi Matsumura , Ryouichi Takeuchi
发明人： Noriyoshi Seo , Atsushi Matsumura , Ryouichi Takeuchi
IPC分类号： H01L33/30
CPC分类号： H01L33/30 , A01G9/26 , H01L33/06 , H01L33/12 , H01L33/405 , H01L2224/45144 , H01L2224/48091 , H01L2224/48465 , H01L2224/49107 , H01L2224/73265 , H01L2924/12032 , Y02A40/274 , H01L2924/00014 , H01L2924/00
摘要： A light emitting diode is provided by the present invention which includes a pn junction-type light emitting unit having a light emitting layer (10) composed of n layers of a strained light emitting layer (12) and n−1 layers of a barrier layer (13), wherein when a barrier layer exists, the light emitting layer (10) has a structure in which one strained light emitting layer (12) and one barrier layer (13) are laminated alternately, n represents an integer of 1 to 7, and the thickness of the light emitting layer (10) is not more than 250 nm.
摘要翻译：本发明提供一种发光二极管，其包括具有由n层应变发光层（12）构成的发光层（10）的pn结型发光单元和n层的阻挡层（13），其中当存在阻挡层时，发光层（10）具有其中一个应变发光层（12）和一个阻挡层（13）交替层叠的结构，n表示1至7的整数，并且发光层（10）的厚度不大于250nm。

10. 发明授权

US08754398B2 Light-emitting diode, light-emitting diode lamp and lighting device 有权
标题翻译：发光二极管，发光二极管灯和照明装置
公开(公告)号：US08754398B2
公开(公告)日：2014-06-17
申请号：US13574894
申请日：2011-01-20
申请人： Noriyuki Aihara , Noriyoshi Seo , Noritaka Muraki
发明人： Noriyuki Aihara , Noriyoshi Seo , Noritaka Muraki
IPC分类号： H01L29/06 , H01L31/072 , H01L31/109 , H01L31/0328 , H01L31/0336
CPC分类号： H01L33/06 , H01L33/10 , H01L33/30 , H01L2224/45144 , H01L2224/48091 , H01L2224/73265 , H01L2924/12032 , H01L2924/00014 , H01L2924/00
摘要： A light-emitting diode, including a light emitting section including an active layer having a quantum well structure in which well layers having the composition: (InX1Ga1-X1)As (0≦X1≦1) and barrier layers having the composition: (AlX2Ga1-X2)As (0≦X2≦1) are alternately laminated, first guide and second guide layers paired to sandwich the active layer and having the composition: (AlX3Ga1-X3)As (0≦X3≦1), and first cladding and second cladding layers paired to sandwich the active layer via the first guide layer and the second guide layer, respectively; a current diffusion layer formed on the light emitting section; and a functional substrate bonded to the current diffusion layer; wherein the first cladding layer and the second cladding layer have the composition: (AlX4Ga1-X4)YIn1-YP (0≦X4≦1, 0
摘要翻译：一种发光二极管，包括具有量子阱结构的有源层的发光部分，其中具有组成为（InX1Ga1-X1）As（0＆n1E; X1＆n1E; 1）的阱层和具有组成为（AlX 2 Ga 1 -X2）As（0＆nlE; X2＆nlE; 1）交替层叠，第一引导层和第二引导层成对夹持有源层，并具有以下成分：（AlX 3 Ga 1-x 3）As（0＆lt; N 1; X 3＆配对的第二包层分别经由第一引导层和第二引导层夹持有源层; 形成在发光部上的电流扩散层; 以及键合到所述电流扩散层的功能性基板; 其特征在于，所述第一包层和所述第二包层的组成如下：（AlX 4 Ga 1-X 4）Y In 1-Y P（0＆nl E; X 4＆lt; 1; 0

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