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1. 发明申请

US20120305890A1 LIGHT-EMITTING DIODE, LIGHT-EMITTING DIODE LAMP AND LIGHTING DEVICE 有权
标题翻译：发光二极管，发光二极管灯和照明装置
公开(公告)号：US20120305890A1
公开(公告)日：2012-12-06
申请号：US13574894
申请日：2011-01-20
申请人： Noriyuki Aihara , Noriyoshi Seo , Noritaka Muraki
发明人： Noriyuki Aihara , Noriyoshi Seo , Noritaka Muraki
IPC分类号： H01L33/04
CPC分类号： H01L33/06 , H01L33/10 , H01L33/30 , H01L2224/45144 , H01L2224/48091 , H01L2224/73265 , H01L2924/12032 , H01L2924/00014 , H01L2924/00
摘要： A light-emitting diode, including a light emitting section including an active layer having a quantum well structure in which well layers having the composition: (InX1Ga1-X1)As (0≦X1≦1) and barrier layers having the composition: (AlX2Ga1-X2)As (0≦X2≦1) are alternately laminated, first guide and second guide layers paired to sandwich the active layer and having the composition: (AlX3Ga1-X3)As (0≦X3≦1), and first cladding and second cladding layers paired to sandwich the active layer via the first guide layer and the second guide layer, respectively; a current diffusion layer formed on the light emitting section; and a functional substrate bonded to the current diffusion layer; wherein the first cladding layer and the second cladding layer have the composition: (AlX4Ga1-X4)YIn1-YP (0≦X4≦1, 0
摘要翻译：一种发光二极管，包括具有量子阱结构的有源层的发光部分，其中具有组成为（InX1Ga1-X1）As（0＆n1E; X1＆n1E; 1）的阱层和具有组成为（AlX 2 Ga 1 -X2）As（0＆nlE; X2＆nlE; 1）交替层叠，第一引导层和第二引导层成对夹持有源层，并具有以下成分：（AlX 3 Ga 1-x 3）As（0＆lt; N 1; X 3＆配对的第二包层分别经由第一引导层和第二引导层夹持有源层; 形成在发光部上的电流扩散层; 以及键合到所述电流扩散层的功能性基板; 其特征在于，所述第一包层和所述第二包层的组成如下：（AlX 4 Ga 1-X 4）Y In 1-Y P（0＆nl E; X 4＆lt; 1; 0

2. 发明申请

US20120168717A1 LIGHT EMITTING DIODE, LIGHT EMITTING DIODE LAMP, AND ILLUMINATING APPARATUS 有权
标题翻译：发光二极管，发光二极管灯和照明装置
公开(公告)号：US20120168717A1
公开(公告)日：2012-07-05
申请号：US13496083
申请日：2010-09-15
申请人： Noriyuki Aihara , Noriyoshi Seo , Noritaka Muraki , Ryouichi Takeuchi
发明人： Noriyuki Aihara , Noriyoshi Seo , Noritaka Muraki , Ryouichi Takeuchi
IPC分类号： H01L33/06
CPC分类号： H01L33/06 , H01L24/45 , H01L33/0079 , H01L33/12 , H01L33/14 , H01L33/30 , H01L2224/05554 , H01L2224/05555 , H01L2224/32225 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/48465 , H01L2224/49107 , H01L2224/73265 , H01L2924/10158 , H01L2924/12041 , H01L2924/12042 , H01L2924/181 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： Disclosed is a light-emitting diode, which has a red and infrared emitting wavelength, excellent monochromatism characteristics, and high output and high efficiency and excellent humidity resistance. The light-emitting diode is provided with: a light-emitting section, which includes an active layer having a quantum well structure and formed by laminating alternately a well layer which comprises a composition expressed by the composition formula of (AlX1Ga1-X1)As (0≦X1≦1) and a barrier layer which comprises a composition expressed by the composition formula of (AlX2Ga1-X2)As (0
摘要翻译：公开了一种发光二极管，其具有红色和红外发射波长，优异的单色特性，高输出和高效率以及优异的耐湿性。发光二极管设置有：发光部，其包括具有量子阱结构的有源层，并且交替地层叠由包含由（AlX1Ga1-X1）As（式中， 0＆lt; X1＆nlE; 1）和包含由组成式表示的组成式（Al x 2 Ga 1-x 2）As（0

3. 发明授权

US08754398B2 Light-emitting diode, light-emitting diode lamp and lighting device 有权
标题翻译：发光二极管，发光二极管灯和照明装置
公开(公告)号：US08754398B2
公开(公告)日：2014-06-17
申请号：US13574894
申请日：2011-01-20
申请人： Noriyuki Aihara , Noriyoshi Seo , Noritaka Muraki
发明人： Noriyuki Aihara , Noriyoshi Seo , Noritaka Muraki
IPC分类号： H01L29/06 , H01L31/072 , H01L31/109 , H01L31/0328 , H01L31/0336
CPC分类号： H01L33/06 , H01L33/10 , H01L33/30 , H01L2224/45144 , H01L2224/48091 , H01L2224/73265 , H01L2924/12032 , H01L2924/00014 , H01L2924/00
摘要： A light-emitting diode, including a light emitting section including an active layer having a quantum well structure in which well layers having the composition: (InX1Ga1-X1)As (0≦X1≦1) and barrier layers having the composition: (AlX2Ga1-X2)As (0≦X2≦1) are alternately laminated, first guide and second guide layers paired to sandwich the active layer and having the composition: (AlX3Ga1-X3)As (0≦X3≦1), and first cladding and second cladding layers paired to sandwich the active layer via the first guide layer and the second guide layer, respectively; a current diffusion layer formed on the light emitting section; and a functional substrate bonded to the current diffusion layer; wherein the first cladding layer and the second cladding layer have the composition: (AlX4Ga1-X4)YIn1-YP (0≦X4≦1, 0
摘要翻译：一种发光二极管，包括具有量子阱结构的有源层的发光部分，其中具有组成为（InX1Ga1-X1）As（0＆n1E; X1＆n1E; 1）的阱层和具有组成为（AlX 2 Ga 1 -X2）As（0＆nlE; X2＆nlE; 1）交替层叠，第一引导层和第二引导层成对夹持有源层，并具有以下成分：（AlX 3 Ga 1-x 3）As（0＆lt; N 1; X 3＆配对的第二包层分别经由第一引导层和第二引导层夹持有源层; 形成在发光部上的电流扩散层; 以及键合到所述电流扩散层的功能性基板; 其特征在于，所述第一包层和所述第二包层的组成如下：（AlX 4 Ga 1-X 4）Y In 1-Y P（0＆nl E; X 4＆lt; 1; 0

4. 发明授权

US08659004B2 Light emitting diode, light emitting diode lamp, and illuminating apparatus 有权
标题翻译：发光二极管，发光二极管灯和照明装置
公开(公告)号：US08659004B2
公开(公告)日：2014-02-25
申请号：US13496083
申请日：2010-09-15
申请人： Noriyuki Aihara , Noriyoshi Seo , Noritaka Muraki , Ryouichi Takeuchi
发明人： Noriyuki Aihara , Noriyoshi Seo , Noritaka Muraki , Ryouichi Takeuchi
IPC分类号： H01L31/00
CPC分类号： H01L33/06 , H01L24/45 , H01L33/0079 , H01L33/12 , H01L33/14 , H01L33/30 , H01L2224/05554 , H01L2224/05555 , H01L2224/32225 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/48465 , H01L2224/49107 , H01L2224/73265 , H01L2924/10158 , H01L2924/12041 , H01L2924/12042 , H01L2924/181 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： Disclosed is a light-emitting diode, which has a red and infrared emitting wavelength, excellent monochromatism characteristics, and high output and high efficiency and excellent humidity resistance. The light-emitting diode is provided with: a light-emitting section, which includes an active layer having a quantum well structure and formed by laminating alternately a well layer which comprises a composition expressed by the composition formula of (AlX1 Ga1-X1) As (0≦X1≦1) and a barrier layer which comprises a composition expressed by the composition formula of (AlX2 Ga1-X2) As (0
摘要翻译：公开了一种发光二极管，其具有红色和红外发射波长，优异的单色特性，高输出和高效率以及优异的耐湿性。发光二极管设置有：发光部，其包括具有量子阱结构的有源层，并且交替地层叠由包含由（AlX 1 Ga 1-X1）As的组成式表示的组成的阱层（0 @ X1 @ 1）和阻挡层，其包含由组成式表示的组成式（AlX 2 Ga 1 -X 2）As（0 <2），以及第一覆盖层和第二覆盖层，两者之间其中所述有源层被夹持，其中所述第一覆盖层和所述第二覆盖层包含由组成式表示的组成式（AlX 3 Ga 1-x）Y1 In1-Y1 P（0≤X3≤1,0

5. 发明申请

US20120168782A1 LIGHT EMITTING DIODE, LIGHT EMITTING DIODE LAMP, AND ILLUMINATING APPARATUS 审中-公开
标题翻译：发光二极管，发光二极管灯和照明装置
公开(公告)号：US20120168782A1
公开(公告)日：2012-07-05
申请号：US13395817
申请日：2010-09-13
申请人： Noriyuki Aihara , Ryouichi Takeuchi , Noritaka Muraki
发明人： Noriyuki Aihara , Ryouichi Takeuchi , Noritaka Muraki
IPC分类号： H01L33/30 , H01L33/08
CPC分类号： H01L33/0079 , H01L33/14 , H01L33/20 , H01L33/38 , H01L2224/73265
摘要： Disclosed is a light-emitting diode, which has an infrared emission wavelength of 700 nm or more, excellent monochromatism characteristics, and high output and high efficiency and excellent humidity resistance. The light-emitting diode is provided with: a light-emitting section (7), which includes an activity layer, wherein the activity layer emits infrared light and includes a multilayer including a well layer (12) which is made from a composition expressed by the composition formula of (AlXGa1-X) As (0≦x≦1) and a barrier layer (13); a current diffusion layer (8) formed on the light-emitting section (7); and a functional substrate (3) bonded to the current diffusion layer (8).
摘要翻译：公开了一种发光二极管，其具有700nm以上的红外发射波长，优异的单色特性，高输出和高效率以及优异的耐湿性。发光二极管设置有：发光部（7），其包括活性层，其中活性层发射红外光，并且包括多层，其包括由以下组成表示的阱层（12）制成的多层（Al x Ga 1-x）As（0＆nlE; x＆nlE; 1）和阻挡层（13）的组成式。形成在发光部（7）上的电流扩散层（8）; 和键合到电流扩散层（8）的功能基板（3）。

6. 发明申请

US20110297978A1 LIGHT-EMITTING DIODE, METHOD FOR MANUFACTURING THE SAME, AND LIGHT-EMITTING DIODE LAMP 审中-公开
标题翻译：发光二极管，其制造方法和发光二极管灯
公开(公告)号：US20110297978A1
公开(公告)日：2011-12-08
申请号：US13202274
申请日：2010-01-21
申请人： Ryouichi Takeuchi , Noritaka Muraki
发明人： Ryouichi Takeuchi , Noritaka Muraki
IPC分类号： H01L33/48 , H01L33/60
CPC分类号： H01L33/46 , H01L33/405 , H01L2224/45144 , H01L2224/48 , H01L2924/00
摘要： The invention provides a high luminance light-emitting diode capable of reducing the loss of light emitted from LED chips in a package and also capable of improving the light extraction efficiency from the package, whereinthe light-emitting diode (1) includes a compound semiconductor layer (2) including a light-emitting portion (8) having a light-emitting layer (9) and a substrate (3), in which an external reflection layer (4) having a reflectivity higher than that of the substrate (3) is provided on a side surface of the substrate (3).
摘要翻译：本发明提供了一种能够减少从封装中的LED芯片发出的光的损失的高亮度发光二极管，并且还能够提高来自封装的光提取效率，其中，发光二极管（1）包括化合物半导体包括具有发光层（9）的发光部（8）和基板（3）的层（2），其中反射率高于基板（3）的反射率的外反射层（4）设置在基板（3）的侧面。

7. 发明申请

US20090152585A1 GALLIUM NITRIDE-BASED COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE 有权
标题翻译：基于氮化镓的化合物半导体发光器件
公开(公告)号：US20090152585A1
公开(公告)日：2009-06-18
申请号：US12065970
申请日：2006-09-05
申请人： Hironao Shinohara , Hisayuki Miki , Noritaka Muraki
发明人： Hironao Shinohara , Hisayuki Miki , Noritaka Muraki
IPC分类号： H01L33/00
CPC分类号： H01L33/025 , H01L33/0095 , H01L33/32 , H01L33/42
摘要： It is an object of the present invention to provide a gallium nitride-based compound semiconductor light-emitting device that is excellent in light output efficiency and needs only a low driving voltage (Vf). The inventive gallium nitride-based compound semiconductor light-emitting device includes an n-type semiconductor layer, a light-emitting layer and a p-type semiconductor layer formed of a gallium nitride-based compound semiconductor and stacked in this order on a substrate, and positive and negative electrodes so arranged as to be in contact with the p-type semiconductor layer and the n-type semiconductor layer, respectively, wherein a region in which a p-type impurity and hydrogen atoms are co-present exists in the p-type semiconductor layer in contact with the positive electrode, and at least a portion, which is in contact with the p-type semiconductor layer, of the positive electrode, is formed of an n-type electro-conductive light transmitting material.
摘要翻译：本发明的目的是提供一种氮化镓系化合物半导体发光元件，该氮化镓系化合物半导体发光元件的光输出效率优异，仅需要低驱动电压（Vf）。本发明的氮化镓系化合物半导体发光元件包括n型半导体层，发光层和由氮化镓系化合物半导体形成的p型半导体层，并依次层叠在基板上，以及分别与p型半导体层和n型半导体层接触的正极和负极，其中在p中存在p型杂质和氢原子共存的区域与正极接触的至少一部分与正极的p型半导体层接触的至少一部分由n型导电透光材料形成。

8. 发明授权

US08049243B2 Gallium nitride-based compound semiconductor light emitting device 有权
标题翻译：氮化镓系化合物半导体发光元件
公开(公告)号：US08049243B2
公开(公告)日：2011-11-01
申请号：US11597413
申请日：2005-05-19
申请人： Koji Kamei , Munetaka Watanabe , Noritaka Muraki , Yasushi Ohno
发明人： Koji Kamei , Munetaka Watanabe , Noritaka Muraki , Yasushi Ohno
IPC分类号： H01L33/00
CPC分类号： H01L33/42 , H01L33/32
摘要： This gallium nitride-based compound semiconductor light emitting device includes an n-type semiconductor layer, a light emitting layer, and a p-type semiconductor layer that are composed of gallium nitride-based compound semiconductors and are deposited in that order on a substrate, and further includes a negative electrode and a positive electrode that are in contact with the n-type semiconductor layer and the p-type semiconductor layer, respectively, wherein the positive electrode has a translucent electrode composed of a three-layer structure including a contact metal layer that contacts at least the p-type semiconductor layer, a current diffusion layer provided on the contact metal layer and having conductivity greater than that of the contact metal layer, and a bonding pad layer provided on the current diffusion layer, and a mixed positive electrode-metal layer including a metal that forms the contact metal layer is present in a positive electrode side surface of the p-type semiconductor layer.
摘要翻译：该氮化镓系化合物半导体发光元件包括由氮化镓系化合物半导体构成的n型半导体层，发光层和p型半导体层，并依次沉积在基板上，并且还包括分别与n型半导体层和p型半导体层接触的负极和正极，其中所述正极具有由包括接触金属的三层结构构成的透光性电极至少与p型半导体层接触的层，设置在接触金属层上并具有大于接触金属层的导电性的电流扩散层，以及设置在电流扩散层上的接合焊盘层，以及混合正极包含形成接触金属层的金属的电极 - 金属层存在于p型半导体的正极侧表面上导体层。

9. 发明授权

US07947995B2 Gallium nitride-based compound semiconductor light emitting device 有权
标题翻译：氮化镓系化合物半导体发光元件
公开(公告)号：US07947995B2
公开(公告)日：2011-05-24
申请号：US12065172
申请日：2007-11-08
申请人： Noritaka Muraki , Naoki Fukunaga
发明人： Noritaka Muraki , Naoki Fukunaga
IPC分类号： H01L33/20
CPC分类号： H01L33/20 , H01L33/18 , H01L33/32
摘要： An object of the present invention is to provide a gallium nitride-based compound semiconductor light emitting device having superior light extraction efficiency and light distribution uniformity.The inventive gallium nitride-based compound semiconductor light emitting device comprises a substrate and a gallium nitride-based compound semiconductor layer stacked on the substrate, wherein on at least one lateral surface of the light emitting device, the bottom (substrate side) of the semiconductor layer is a reverse taper inclined 5 to 85 degrees relative to the substrate main surface and the top of the semiconductor layer is a forward taper inclined 95 to 175 degrees relative to the substrate main surface.
摘要翻译：本发明的目的是提供具有优异的光提取效率和光分布均匀性的氮化镓基化合物半导体发光器件。本发明的氮化镓基化合物半导体发光器件包括基板和层叠在基板上的氮化镓基化合物半导体层，其中在发光器件的至少一个侧表面上，半导体的底部（衬底侧）层是相对于基板主表面倾斜5至85度的倒锥度，并且半导体层的顶部是相对于基板主表面倾斜95至175度的前锥度。

10. 发明申请

US20080048172A1 Gallium Nitride-Based Compound Semiconductor Light-Emitting Device 审中-公开
标题翻译：基于氮化镓的复合半导体发光器件
公开(公告)号：US20080048172A1
公开(公告)日：2008-02-28
申请号：US10586909
申请日：2005-01-28
申请人： Noritaka Muraki , Munetaka Watanabe , Hisayuki Miki , Yasushi Ohno
发明人： Noritaka Muraki , Munetaka Watanabe , Hisayuki Miki , Yasushi Ohno
IPC分类号： H01L33/00
CPC分类号： H01L33/38 , H01L33/32 , H01L33/42
摘要： A gallium nitride compound semiconductor light-emitting device includes a crystalline substrate (10), a light-emiting layer (15) of a quantum well structure which is formed of a gallium nitride compound semiconductor barrier layer and a gallium nitride compound semiconductor well layer, which light-emitting layer is provided on a second side of the crystalline substrate, a contact layer (17) formed of a Group III-V compound semiconductor for providing an Ohmic electrode for supplying device operation current to the light-emitting layer, and an Ohmic electrode (18) which is provided on the contact layer and has an aperture through which a portion of the contact layer is exposed. The Ohmic electrode exhibits light permeability with respect to light emitted from the light-emitting layer. The well layer contains a thick portion having a large thickness and a thin portion having a small thickness.
摘要翻译：氮化镓系化合物半导体发光元件包括由氮化镓系化合物半导体势垒层和氮化镓系化合物半导体阱层构成的量子阱结构的结晶性基板（10），发光层（15）所述发光层设置在所述结晶基板的第二面上，由用于提供用于向所述发光层提供器件工作电流的欧姆电极的III-V族化合物半导体形成的接触层（17）欧姆电极（18），其设置在接触层上并且具有孔，接触层的一部分穿过该孔露出。欧姆电极相对于从发光层发射的光呈现透光性。阱层包含厚度较大的厚壁部分和厚度较小的薄壁部分。

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