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    • 10. 发明申请
    • NiO-based Resistive Random Access Memory and the Preparation Method Thereof
    • 基于NiO的电阻随机存取存储器及其制备方法
    • US20120305882A1
    • 2012-12-06
    • US13498973
    • 2011-09-23
    • Jingjing GuQingqing SunPengfei WangPeng ZhouWei Zhang
    • Jingjing GuQingqing SunPengfei WangPeng ZhouWei Zhang
    • H01L45/00H01L21/02
    • H01L45/146G11C13/0007H01L45/06H01L45/16
    • The present invention belongs to the technical field of memory storage and specially relates to a NiO-based resistive random access memory system (RRAM) and a preparation method thereof. The RRAM is comprised of a substrate and a metal-insulator-metal (MIM) structure, wherein the electrodes are metal films, such as copper, aluminum, etc., capable of being applied to the interconnection process, and the resistive switching insulator is an Al2O3/NiO/Al2O3 laminated dielectric film. The MIM structure in the invention shows stable switching between the bi-stable resistance states as well as memory features; compared with the RRAM that only uses a single NiO-based dielectric film, the storage window is increased, and the resistance stability is improved. Therefore, the NiO-based RRAM has a good prospect in actual application. The present invention further provides a method for preparing the abovementioned memory storage system.
    • 本发明属于存储器的技术领域,特别涉及一种基于NiO的电阻随机存取存储器(RRAM)及其制备方法。 RRAM由衬底和金属 - 绝缘体 - 金属(MIM)结构构成,其中电极是可应用于互连工艺的金属膜,例如铜,铝等,并且电阻式开关绝缘子是 Al2O3 / NiO / Al2O3层压电介质膜。 本发明的MIM结构显示了稳定的电阻状态和存储特征之间的稳定切换; 与仅使用单个NiO基电介质膜的RRAM相比,存储窗口增加,并且电阻稳定性得到改善。 因此,基于NiO的RRAM在实际应用中具有良好的前景。 本发明还提供了一种用于制备上述存储器存储系统的方法。