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1. 发明授权

US08330125B2 Ion beam tuning 有权
标题翻译：离子束调谐
公开(公告)号：US08330125B2
公开(公告)日：2012-12-11
申请号：US12887068
申请日：2010-09-21
申请人： Shengwu Chang , Joseph C. Olson , Frank Sinclair , Matthew P. McClellan
发明人： Shengwu Chang , Joseph C. Olson , Frank Sinclair , Matthew P. McClellan
IPC分类号： H01J37/10
CPC分类号： H01J37/3171 , H01J37/21 , H01J2237/216 , H01J2237/24405 , H01J2237/24528 , H01J2237/24542
摘要： A beam line ion implanter includes an ion source configured to generate an ion beam, a scanner configured to scan the ion beam to produce a scanned ion beam having trajectories which diverge from a scan origin, and a focusing element having a focusing field positioned upstream of the scanner configured to focus the ion beam to a focal point at the scan origin. A method of ion beam tuning includes generating an ion beam, focusing the ion beam to a focal point positioned at a scan origin, and scanning the ion beam to produce a scanned ion beam having trajectories which diverge from the scan origin.
摘要翻译：束线离子注入机包括被配置为产生离子束的离子源，扫描器，被配置为扫描离子束以产生具有从扫描原点发散的轨迹的扫描离子束;以及聚焦元件，其具有位于扫描器被配置为将离子束聚焦到扫描原点处的焦点。离子束调谐的方法包括产生离子束，将离子束聚焦到位于扫描原点的焦点，并扫描离子束以产生具有与扫描原点分离的轨迹的扫描离子束。

2. 发明授权

US07442944B2 Ion beam implant current, spot width and position tuning 有权
标题翻译：离子束注入电流，光斑宽度和位置调整
公开(公告)号：US07442944B2
公开(公告)日：2008-10-28
申请号：US10960904
申请日：2004-10-07
申请人： Shengwu Chang , Antonella Cucchetti , Joseph P. Dzengeleski , Gregory R. Gibilaro , Rosario Mollica , Gregg A. Norris , Joseph C. Olson , Marie J. Welsch
发明人： Shengwu Chang , Antonella Cucchetti , Joseph P. Dzengeleski , Gregory R. Gibilaro , Rosario Mollica , Gregg A. Norris , Joseph C. Olson , Marie J. Welsch
IPC分类号： H01J37/317
CPC分类号： H01J37/3171 , H01J2237/24542 , H01J2237/30461 , H01J2237/31703
摘要： An ion beam tuning method, system and program product for tuning an ion implanter system are disclosed. The invention obtains an ion beam profile of the ion beam by, for example, scanning the ion beam across a profiler that is within an implant chamber; and tunes the ion implanter system to maximize an estimated implant current based on the ion beam profile to simultaneously optimize total ion beam current and ion beam spot width, and maximize implant current. In addition, the tuning can also position the ion beam along a desired ion beam path based on the feedback of the spot beam center, which improves ion implanter system productivity and performance by reducing ion beam setup time and provides repeatable beam angle performance for each ion beam over many setups.
摘要翻译：公开了用于调整离子注入机系统的离子束调谐方法，系统和程序产品。本发明通过例如扫描离子束通过植入室内的轮廓仪获得离子束的离子束轮廓; 并调整离子注入系统，以根据离子束轮廓最大化估计的注入电流，以同时优化总离子束电流和离子束斑点宽度，并最大化注入电流。此外，调谐还可以基于点光束中心的反馈沿着期望的离子束路径定位离子束，其通过减少离子束建立时间改善离子注入系统的生产率和性能，并为每个离子提供可重复的射束角度性能横跨许多设置。

3. 发明授权

US07253423B2 Technique for uniformity tuning in an ion implanter system 有权
标题翻译：离子注入机系统均匀性调整技术
公开(公告)号：US07253423B2
公开(公告)日：2007-08-07
申请号：US11135307
申请日：2005-05-24
申请人： Shengwu Chang , Joseph C. Olson , Damian Brennan
发明人： Shengwu Chang , Joseph C. Olson , Damian Brennan
IPC分类号： H01J37/302
CPC分类号： H01J37/3171 , H01J37/304 , H01J2237/24542 , H01J2237/30483 , H01J2237/31703
摘要： A technique for uniformity tuning in an ion implanter system is disclosed. In one particular exemplary embodiment, the technique may be realized as a method for uniformity tuning in an ion implanter system. The method may comprise measuring an ion beam at a plurality of predetermined locations along a beam path. The method may also comprise calculating an ion beam profile along the beam path based at least in part on the ion beam measurements at the plurality of predetermined locations. The method may further comprise determining a desired velocity profile along the beam path based at least in part on the calculated ion beam profile such that the ion beam, when scanned according to the desired velocity profile, produces a desired ion beam profile along the beam path.
摘要翻译：公开了一种用于离子注入机系统中均匀性调谐的技术。在一个特定的示例性实施例中，该技术可以被实现为用于离子注入机系统中的均匀性调谐的方法。该方法可以包括在沿着光束路径的多个预定位置处测量离子束。该方法还可以包括至少部分地基于多个预定位置处的离子束测量来计算沿着光束路径的离子束分布。该方法可以进一步包括至少部分地基于所计算的离子束分布来确定沿着光束路径的期望速度分布，使得当根据期望的速度分布扫描时，离子束沿着光束路径产生期望的离子束分布。

4. 发明授权

US09012337B2 Platen control 有权
标题翻译：压板控制
公开(公告)号：US09012337B2
公开(公告)日：2015-04-21
申请号：US13270644
申请日：2011-10-11
申请人： Shengwu Chang , Joseph C. Olson , Frank Sinclair , Matthew P. McClellan , Antonella Cucchetti
发明人： Shengwu Chang , Joseph C. Olson , Frank Sinclair , Matthew P. McClellan , Antonella Cucchetti
IPC分类号： H01L21/027 , H01L21/66 , H01L21/67
CPC分类号： H01L21/67109 , H01L21/67288
摘要： A system and method for maintain a desired degree of platen flatness is disclosed. A laser system is used to measure the flatness of a platen. The temperature of the platen is then varied to achieve the desired level of flatness. In some embodiments, this laser system is only used during a set up period and the resulting desired temperature is then used during normal operation. In other embodiments, a laser system is used to measure the flatness of the platen, even while the workpiece is being processed.
摘要翻译：公开了一种用于保持期望的压板平整度的系统和方法。激光系统用于测量压板的平整度。然后改变压板的温度以达到所需的平坦度水平。在一些实施例中，该激光系统仅在建立周期期间使用，然后在正常操作期间使用所得到的期望温度。在其他实施例中，即使在正在处理工件时，也使用激光系统来测量压板的平坦度。

5. 发明申请

US20120068081A1 ION BEAM TUNING 有权
标题翻译：离子束调谐
公开(公告)号：US20120068081A1
公开(公告)日：2012-03-22
申请号：US12887068
申请日：2010-09-21
申请人： Shengwu Chang , Joseph C. Olson , Frank Sinclair , Matthew P. McClellan
发明人： Shengwu Chang , Joseph C. Olson , Frank Sinclair , Matthew P. McClellan
IPC分类号： H01J37/317 , H01J37/12 , H01J37/147
CPC分类号： H01J37/3171 , H01J37/21 , H01J2237/216 , H01J2237/24405 , H01J2237/24528 , H01J2237/24542
摘要： A beam line ion implanter includes an ion source configured to generate an ion beam, a scanner configured to scan the ion beam to produce a scanned ion beam having trajectories which diverge from a scan origin, and a focusing element having a focusing field positioned upstream of the scanner configured to focus the ion beam to a focal point at the scan origin. A method of ion beam tuning includes generating an ion beam, focusing the ion beam to a focal point positioned at a scan origin, and scanning the ion beam to produce a scanned ion beam having trajectories which diverge from the scan origin.
摘要翻译：束线离子注入机包括被配置为产生离子束的离子源，扫描器，被配置为扫描离子束以产生具有从扫描原点发散的轨迹的扫描离子束;以及聚焦元件，其具有位于扫描器被配置为将离子束聚焦到扫描原点处的焦点。离子束调谐的方法包括产生离子束，将离子束聚焦到位于扫描原点的焦点，并扫描离子束以产生具有与扫描原点分离的轨迹的扫描离子束。

6. 发明授权

US07462844B2 Method, system, and apparatus for improving doping uniformity in high-tilt ion implantation 有权
标题翻译：用于改善高倾斜离子注入中的掺杂均匀性的方法，系统和装置
公开(公告)号：US07462844B2
公开(公告)日：2008-12-09
申请号：US11241406
申请日：2005-09-30
申请人： Shengwu Chang , Isao Tsunoda , Nobihiro Tokoro , Dennis Rodier , Joseph C. Olson , Donna Smatlak , Damian Brennan , William Bintz
发明人： Shengwu Chang , Isao Tsunoda , Nobihiro Tokoro , Dennis Rodier , Joseph C. Olson , Donna Smatlak , Damian Brennan , William Bintz
IPC分类号： H01J37/08
CPC分类号： H01J37/3171 , H01J2237/20207 , H01J2237/24405 , H01J2237/2446 , H01J2237/31703
摘要： The invention provides a method, system, and apparatus for improving doping uniformity during ion implantation, particularly during a high-tilt ion implantation. In one embodiment, the invention provides a method for improving doping uniformity in a high-tilt ion implantation, the method comprising the steps of: positioning a wafer along an axis perpendicular to an ion beam scan plane to form an angle between a surface of the wafer and a plane perpendicular to the ion beam; measuring a current of the ion beam by moving a current detector across the ion beam in a path substantially coplanar with a surface of the wafer; and adjusting a doping uniformity of the ion beam current based on the measuring step.
摘要翻译：本发明提供了一种用于改善离子注入期间掺杂均匀性的方法，系统和装置，特别是在高倾斜离子注入期间。在一个实施例中，本发明提供了一种用于改善高倾斜离子注入中的掺杂均匀性的方法，所述方法包括以下步骤：沿垂直于离子束扫描平面的轴定位晶片，以形成晶片的表面之间的角度晶片和垂直于离子束的平面; 通过在与晶片表面基本共面的路径中移动电流检测器跨越离子束来测量离子束的电流; 以及基于测量步骤调整离子束电流的掺杂均匀性。

7. 发明授权

US07138768B2 Indirectly heated cathode ion source 有权
公开(公告)号：US07138768B2
公开(公告)日：2006-11-21
申请号：US10154232
申请日：2002-05-23
申请人： Peter E. Maciejowski , Joseph C. Olson , Shengwu Chang , Bjorn O. Pedersen , Leo V. Klos, Jr. , Daniel Distaso , Curt D. Bergeron
发明人： Peter E. Maciejowski , Joseph C. Olson , Shengwu Chang , Bjorn O. Pedersen , Leo V. Klos, Jr. , Daniel Distaso , Curt D. Bergeron
IPC分类号： H01J7/24
CPC分类号： H01J27/08 , H01J27/022 , H01J2237/08 , H01J2237/31701
摘要： An indirectly heated cathode ion source includes an arc chamber housing that defines an arc chamber, an indirectly heated cathode and a filament for heating the cathode. The cathode may include an emitting portion having a front surface, a rear surface and a periphery, a support rod attached to the rear surface of the emitting portion, and a skirt extending from the periphery of the emitting portion. A cathode assembly may include the cathode, a filament and a clamp assembly for mounting the cathode and the filament in a fixed spatial relationship and for conducting electrical energy to the cathode and the filament. The filament is positioned in a cavity defined by the emitting portion and the skirt of the cathode. The ion source may include a shield for inhibiting escape of electrons and plasma from a region outside the arc chamber in proximity to the filament and the cathode.

8. 发明申请

US20060076510A1 Ion beam implant current, spot width and position tuning 有权
标题翻译：离子束注入电流，光斑宽度和位置调整
公开(公告)号：US20060076510A1
公开(公告)日：2006-04-13
申请号：US10960904
申请日：2004-10-07
申请人： Shengwu Chang , Antonella Cucchetti , Joseph Dzengeleski , Gregory Gibilaro , Rosario Mollica , Gregg Norris , Joseph Olson , Marie Welsch
发明人： Shengwu Chang , Antonella Cucchetti , Joseph Dzengeleski , Gregory Gibilaro , Rosario Mollica , Gregg Norris , Joseph Olson , Marie Welsch
IPC分类号： H01J37/317
CPC分类号： H01J37/3171 , H01J2237/24542 , H01J2237/30461 , H01J2237/31703
摘要： An ion beam tuning method, system and program product for tuning an ion implanter system are disclosed. The invention obtains an ion beam profile of the ion beam by, for example, scanning the ion beam across a profiler that is within an implant chamber; and tunes the ion implanter system to maximize an estimated implant current based on the ion beam profile to simultaneously optimize total ion beam current and ion beam spot width, and maximize implant current. In addition, the tuning can also position the ion beam along a desired ion beam path based on the feedback of the spot beam center, which improves ion implanter system productivity and performance by reducing ion beam setup time and provides repeatable beam angle performance for each ion beam over many setups.
摘要翻译：公开了用于调整离子注入机系统的离子束调谐方法，系统和程序产品。本发明通过例如扫描离子束通过植入室内的轮廓仪获得离子束的离子束轮廓; 并调整离子注入系统，以根据离子束轮廓最大化估计的注入电流，以同时优化总离子束电流和离子束斑点宽度，并最大化注入电流。此外，调谐还可以基于点光束中心的反馈沿着期望的离子束路径定位离子束，其通过减少离子束建立时间改善离子注入系统的生产率和性能，并为每个离子提供可重复的射束角度性能横跨许多设置。

9. 发明授权

US07622724B2 High voltage insulator for preventing instability in an ion implanter due to triple-junction breakdown 有权
标题翻译：高压绝缘子，用于防止由于三结击穿引起的离子注入机的不稳定性
公开(公告)号：US07622724B2
公开(公告)日：2009-11-24
申请号：US11767657
申请日：2007-06-25
申请人： Shengwu Chang , Frank Sinclair
发明人： Shengwu Chang , Frank Sinclair
IPC分类号： G21K5/00
CPC分类号： H01B17/64
摘要： A high voltage insulator for preventing instability in an ion implanter due to triple junction breakdown is described. In one embodiment, there is an apparatus for preventing triple junction instability in an ion implanter. In this embodiment, there is a first metal electrode and a second metal electrode. An insulator is disposed between the first metal electrode and the second metal electrode. The insulator has at least one surface between the first metal electrode and the second metal electrode that is exposed to a vacuum that transports an ion beam generated by the ion implanter. A first conductive layer is located between the first metal electrode and the insulator. The first conductive layer prevents triple junction breakdown from occurring at an interface of the first electrode, insulator and vacuum. A second conductive layer is located between the second metal electrode and the insulator opposite the first conductive layer. The second conductive layer prevents triple junction breakdown from occurring at an interface of the second electrode, insulator and vacuum.
摘要翻译：描述了一种用于防止由于三结击穿引起的离子注入机不稳定性的高压绝缘体。在一个实施例中，存在用于防止离子注入机中的三重连接不稳定性的装置。在本实施例中，存在第一金属电极和第二金属电极。绝缘体设置在第一金属电极和第二金属电极之间。绝缘体具有在第一金属电极和第二金属电极之间的至少一个表面，其暴露于输送由离子注入机产生的离子束的真空。第一导电层位于第一金属电极和绝缘体之间。第一导电层防止在第一电极，绝缘体和真空的界面处发生三结击穿。第二导电层位于第二金属电极和与第一导电层相对的绝缘体之间。第二导电层防止在第二电极，绝缘体和真空的界面处发生三结击穿。

10. 发明申请

US20080315114A1 HIGH VOLTAGE INSULATOR FOR PREVENTING INSTABILITY IN AN ION IMPLANTER DUE TO TRIPLE-JUNCTION BREAKDOWN 有权
标题翻译：高电压绝缘子，用于防止离子植入物由于三重断开而导致的不稳定性
公开(公告)号：US20080315114A1
公开(公告)日：2008-12-25
申请号：US11767657
申请日：2007-06-25
申请人： Shengwu Chang , Frank Slnclalr
发明人： Shengwu Chang , Frank Slnclalr
IPC分类号： H01B17/20 , H01J27/00
CPC分类号： H01B17/64
摘要： A high voltage insulator for preventing instability in an ion implanter due to triple junction breakdown is described. In one embodiment, there is an apparatus for preventing triple junction instability in an ion implanter. In this embodiment, there is a first metal electrode and a second metal electrode. An insulator is disposed between the first metal electrode and the second metal electrode. The insulator has at least one surface between the first metal electrode and the second metal electrode that is exposed to a vacuum that transports an ion beam generated by the ion implanter. A first conductive layer is located between the first metal electrode and the insulator. The first conductive layer prevents triple junction breakdown from occurring at an interface of the first electrode, insulator and vacuum. A second conductive layer is located between the second metal electrode and the insulator opposite the first conductive layer. The second conductive layer prevents triple junction breakdown from occurring at an interface of the second electrode, insulator and vacuum.
摘要翻译：描述了一种用于防止由于三结击穿引起的离子注入机不稳定性的高压绝缘体。在一个实施例中，存在用于防止离子注入机中的三重连接不稳定性的装置。在本实施例中，存在第一金属电极和第二金属电极。绝缘体设置在第一金属电极和第二金属电极之间。绝缘体具有在第一金属电极和第二金属电极之间的至少一个表面，其暴露于输送由离子注入机产生的离子束的真空。第一导电层位于第一金属电极和绝缘体之间。第一导电层防止在第一电极，绝缘体和真空的界面处发生三结击穿。第二导电层位于第二金属电极和与第一导电层相对的绝缘体之间。第二导电层防止在第二电极，绝缘体和真空的界面处发生三结击穿。

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