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    • 8. 发明授权
    • Technique for uniformity tuning in an ion implanter system
    • 离子注入机系统均匀性调整技术
    • US07253423B2
    • 2007-08-07
    • US11135307
    • 2005-05-24
    • Shengwu ChangJoseph C. OlsonDamian Brennan
    • Shengwu ChangJoseph C. OlsonDamian Brennan
    • H01J37/302
    • H01J37/3171H01J37/304H01J2237/24542H01J2237/30483H01J2237/31703
    • A technique for uniformity tuning in an ion implanter system is disclosed. In one particular exemplary embodiment, the technique may be realized as a method for uniformity tuning in an ion implanter system. The method may comprise measuring an ion beam at a plurality of predetermined locations along a beam path. The method may also comprise calculating an ion beam profile along the beam path based at least in part on the ion beam measurements at the plurality of predetermined locations. The method may further comprise determining a desired velocity profile along the beam path based at least in part on the calculated ion beam profile such that the ion beam, when scanned according to the desired velocity profile, produces a desired ion beam profile along the beam path.
    • 公开了一种用于离子注入机系统中均匀性调谐的技术。 在一个特定的示例性实施例中,该技术可以被实现为用于离子注入机系统中的均匀性调谐的方法。 该方法可以包括在沿着光束路径的多个预定位置处测量离子束。 该方法还可以包括至少部分地基于多个预定位置处的离子束测量来计算沿着光束路径的离子束分布。 该方法可以进一步包括至少部分地基于所计算的离子束分布来确定沿着光束路径的期望速度分布,使得当根据期望的速度分布扫描时,离子束沿着光束路径产生期望的离子束分布 。