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    • 5. 发明授权
    • High voltage insulator for preventing instability in an ion implanter due to triple-junction breakdown
    • 高压绝缘子,用于防止由于三结击穿引起的离子注入机的不稳定性
    • US07622724B2
    • 2009-11-24
    • US11767657
    • 2007-06-25
    • Shengwu ChangFrank Sinclair
    • Shengwu ChangFrank Sinclair
    • G21K5/00
    • H01B17/64
    • A high voltage insulator for preventing instability in an ion implanter due to triple junction breakdown is described. In one embodiment, there is an apparatus for preventing triple junction instability in an ion implanter. In this embodiment, there is a first metal electrode and a second metal electrode. An insulator is disposed between the first metal electrode and the second metal electrode. The insulator has at least one surface between the first metal electrode and the second metal electrode that is exposed to a vacuum that transports an ion beam generated by the ion implanter. A first conductive layer is located between the first metal electrode and the insulator. The first conductive layer prevents triple junction breakdown from occurring at an interface of the first electrode, insulator and vacuum. A second conductive layer is located between the second metal electrode and the insulator opposite the first conductive layer. The second conductive layer prevents triple junction breakdown from occurring at an interface of the second electrode, insulator and vacuum.
    • 描述了一种用于防止由于三结击穿引起的离子注入机不稳定性的高压绝缘体。 在一个实施例中,存在用于防止离子注入机中的三重连接不稳定性的装置。 在本实施例中,存在第一金属电极和第二金属电极。 绝缘体设置在第一金属电极和第二金属电极之间。 绝缘体具有在第一金属电极和第二金属电极之间的至少一个表面,其暴露于输送由离子注入机产生的离子束的真空。 第一导电层位于第一金属电极和绝缘体之间。 第一导电层防止在第一电极,绝缘体和真空的界面处发生三结击穿。 第二导电层位于第二金属电极和与第一导电层相对的绝缘体之间。 第二导电层防止在第二电极,绝缘体和真空的界面处发生三结击穿。