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1. 发明申请

US20130141966A1 MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETIC MEMORY 有权
标题翻译：磁阻效应元件和磁记忆
公开(公告)号：US20130141966A1
公开(公告)日：2013-06-06
申请号：US13701257
申请日：2011-05-26
申请人： Hideo Ohno , Shoji Ikeda , Fumihiro Matsukura , Masaki Endoh , Shun Kanai , Katsuya Miura , Hiroyuki Yamamoto
发明人： Hideo Ohno , Shoji Ikeda , Fumihiro Matsukura , Masaki Endoh , Shun Kanai , Katsuya Miura , Hiroyuki Yamamoto
IPC分类号： G11C11/16 , H01L43/02
CPC分类号： G11C11/16 , G11C11/14 , G11C11/161 , G11C11/1675 , H01L27/228 , H01L43/02 , H01L43/08
摘要： Provided are a magnetoresistance effect element with a stable magnetization direction perpendicular to film plane and a controlled magnetoresistance ratio, in which writing can be performed by magnetic domain wall motion, and a magnetic memory including the magnetoresistance effect element. The magnetoresistance ratio is controlled by forming a ferromagnetic layer of the magnetoresistance effect element from a ferromagnetic material including at least one type of 3d transition metal or a Heusler alloy. The magnetization direction is changed from a direction in the film plane to a direction perpendicular to the film plane by controlling the film thickness of the ferromagnetic layer on an atomic layer level.
摘要翻译：提供了具有与膜平面垂直的稳定磁化方向的磁阻效应元件和可以通过磁畴壁运动进行写入的受控磁阻比，以及包括磁阻效应元件的磁存储器。通过从包括至少一种类型的3d过渡金属或Heusler合金的铁磁材料形成磁阻效应元件的铁磁层来控制磁阻比。通过在原子层上控制铁磁层的膜厚度，将磁化方向从膜平面的方向转变为垂直于膜平面的方向。

2. 发明申请

US20130094284A1 MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETIC MEMORY 有权
标题翻译：磁阻效应元件和磁记忆
公开(公告)号：US20130094284A1
公开(公告)日：2013-04-18
申请号：US13701846
申请日：2011-05-31
申请人： Hideo Ohno , Shoji Ikeda , Fumihiro Matsukura , Masaki Endoh , Shun Kanai , Hiroyuki Yamamoto , Katsuya Miura
发明人： Hideo Ohno , Shoji Ikeda , Fumihiro Matsukura , Masaki Endoh , Shun Kanai , Hiroyuki Yamamoto , Katsuya Miura
IPC分类号： G11C11/16 , H01L43/02
CPC分类号： H01L43/08 , G01R33/098 , G11B5/31 , G11C11/16 , G11C11/161 , G11C11/1675 , H01L27/228 , H01L43/02 , H01L43/10 , H01L43/12 , Y10T428/1114
摘要： Provided are a magneto resistive effect element with a stable magnetization direction perpendicular to a film plane and with a controlled magnetoresistance ratio, and a magnetic memory using the magneto resistive effect element. Ferromagnetic layers 106 and 107 of the magneto resistive effect element are formed from a ferromagnetic material containing at least one type of 3d transition metal such that the magnetoresistance ratio is controlled, and the film thickness of the ferromagnetic layers is controlled on an atomic layer level such that the magnetization direction is changed from a direction in the film plane to a direction perpendicular to the film plane.
摘要翻译：提供了具有垂直于膜平面和受控磁阻比的稳定磁化方向的磁阻效应元件，以及使用该磁阻效应元件的磁存储器。磁阻效应元件的铁磁层106和107由含有至少一种类型的3d过渡金属的铁磁材料形成，使得磁阻比被控制，并且铁磁层的膜厚被控制在诸如磁化方向从薄膜平面的方向向垂直于薄膜平面的方向变化。

3. 发明授权

US08217477B2 Magnetic memory cell and magnetic random access memory 有权
标题翻译：磁存储单元和磁性随机存取存储器
公开(公告)号：US08217477B2
公开(公告)日：2012-07-10
申请号：US12318243
申请日：2008-12-23
申请人： Hideo Ohno , Shoji Ikeda , Jun Hayakawa
发明人： Hideo Ohno , Shoji Ikeda , Jun Hayakawa
IPC分类号： H01L29/82
CPC分类号： H01L43/08 , G11C11/16 , G11C11/161 , G11C11/1659 , G11C11/1675 , H01L27/228
摘要： Provided is a reliable nonvolatile memory with a lower power consumption. A ferromagnetic interconnection which is magnetized antiparallel or parallel to a magnetization direction of a ferromagnetic pinned layer in a giant magnetoresistive device or a tunnel magnetoresistive device constituting the magnetic memory cell, is connected to a ferromagnetic free layer with a non-magnetic layer being interposed in between, the ferromagnetic free layer serving as a recording layer. Thereby, the magnetization of the recording layer is switched by use of a spin transfer torque.
摘要翻译：提供了具有较低功耗的可靠的非易失性存储器。在构成磁存储单元的巨磁电阻器件或隧道磁阻器件中被磁化反并联或平行于铁磁性钉扎层的磁化方向的铁磁互连连接到铁磁自由层，其中非磁性层插入作为记录层的铁磁自由层之间。由此，通过使用自旋转移转矩来切换记录层的磁化。

4. 发明申请

US20070025029A1 Magnetoresistive device and nonvolatile magnetic memory equipped with the same 有权
标题翻译：磁阻器件和配备相同的非易失性磁存储器
公开(公告)号：US20070025029A1
公开(公告)日：2007-02-01
申请号：US11493892
申请日：2006-07-27
申请人： Jun Hayakawa , Hideo Ohno , Shoji Ikeda
发明人： Jun Hayakawa , Hideo Ohno , Shoji Ikeda
IPC分类号： G11C11/00
CPC分类号： H01L27/228 , B82Y25/00 , G11C11/161 , H01F10/3254 , H01F10/3263 , H01F10/3272 , H01L43/10
摘要： A fast and very low-power-consuming nonvolatile memory. A nonvolatile magnetic memory includes a high-output tunnel magnetoresistive device, in which spin-transfer torque is used for writing. A tunnel magnetoresistive device has a structure such that a ferromagnetic film of a body-centered cubic structure containing Co, Fe, and B, a MgO insulator film of a rock-salt structure oriented in (100), and a ferromagnetic film are stacked.
摘要翻译：快速且功耗非常低的非易失性存储器。非易失性磁存储器包括高输出隧道磁阻器件，其中使用自旋转移转矩来进行写入。隧道磁阻器件具有这样的结构，使得包含Co，Fe和B的体心立方结构的铁磁膜，（100）中取向的岩盐结构的MgO绝缘膜和铁磁膜被堆叠。

5. 发明授权

US4976785A Paint resin 失效
标题翻译：油漆树脂
公开(公告)号：US4976785A
公开(公告)日：1990-12-11
申请号：US309894
申请日：1989-02-14
申请人： Shinji Nakano , Koichi Tsutsui , Shoji Ikeda , Yoji Hirasawa
发明人： Shinji Nakano , Koichi Tsutsui , Shoji Ikeda , Yoji Hirasawa
IPC分类号： C09D7/45 , C09D17/00
CPC分类号： C09D7/02 , C09D17/00
摘要： Disclosed is a paint resin prepared by reacting an aluminum chelate compound with a resin having an active hydrogen bonded to an electrophilic atom or atomic group, and/or epoxy group.
摘要翻译：公开了通过铝螯合化合物与具有键合到亲电子原子或原子团的活性氢的树脂和/或环氧基团而制备的涂料树脂。

6. 发明授权

US4556683A Pigment dispersing resin and composition containing same 失效
标题翻译：颜料分散树脂和含有它的组合物
公开(公告)号：US4556683A
公开(公告)日：1985-12-03
申请号：US524396
申请日：1983-08-18
申请人： Yoji Hirasawa , Shoji Ikeda
发明人： Yoji Hirasawa , Shoji Ikeda
IPC分类号： C08G59/00 , C08G59/62 , C08G65/26 , C08G65/329 , C09D17/00 , C09D163/00 , C08L63/00
CPC分类号： C08G65/2606 , C08G59/62 , C08G65/329 , C09D17/00
摘要： A pigment dispersing resin which essentially consists of a modified polymer obtained by introducing at least one of acidic groups and basic groups into a polymeric polyol of star-shaped structure prepared by reacting a polyol having at least four hydroxyl groups per molecule with an epoxide, the resin being compatible with pigments and vehicle resins, and a pigment dispersed paste which comprises the pigment dispersing resin and a pigment, the pigment dispersed paste being low in viscosity over a long period of time.
摘要翻译：一种颜料分散树脂，其基本上由通过将酸性基团和碱性基团中的至少一种引入到通过使每分子具有至少四个羟基的多元醇与环氧化物反应制备的星形结构的聚合多元醇中获得的改性聚合物，与颜料和载体树脂相容的树脂和包含颜料分散树脂和颜料的颜料分散浆料，颜料分散糊剂在长时间内粘度低。

7. 发明授权

US4448769A Ester of 1,1-dioxopenicillanic acid, and use thereof as .beta.-lactamase inhibitor 失效
标题翻译： 1,1-二氧代青霉烷酸酯，其用作β-内酰胺酶抑制剂
公开(公告)号：US4448769A
公开(公告)日：1984-05-15
申请号：US396471
申请日：1982-07-08
申请人： Shoji Ikeda , Fumio Sakamoto , Goro Tsukamoto , Shigeru Yamabe
发明人： Shoji Ikeda , Fumio Sakamoto , Goro Tsukamoto , Shigeru Yamabe
IPC分类号： C07D317/40 , C07D499/00 , C07D499/32 , A61K31/425
CPC分类号： C07D317/40 , C07D499/00
摘要： A 1,1-dioxopenicillanic acid ester represented by formula (I) ##STR1## wherein R represents a methyl or phenyl group. The ester of formula (I) may be prepared by reacting 1,1-dioxopenicillanic acid or its salt with a compound represented by formula (III) ##STR2## wherein R is as defined above, and X represents a halogen atom, or by oxidizing a compound of formula (V) ##STR3## wherein R is as defined above. The ester of the formula (I) is useful as a .beta.-lactamase inhibitor and may be used in association with a .beta.-lactam antibiotic.
摘要翻译：由式（I）表示的1,1-二氧代青霉烷酸酯其中R表示甲基或苯基。式（I）的酯可以通过使1,1-二氧代青霉烷酸或其盐与式（III）表示的化合物反应制备，其中R如上定义，X表示卤素原子，或通过氧化其中R如上定义的式（V）化合物（V）。式（I）的酯可用作β-内酰胺酶抑制剂，并且可以与β-内酰胺抗生素结合使用。

8. 发明授权

US4428806A Process for producing brominated 1,3-dioxolen-2-ones 失效
标题翻译：生产溴化1,3-二氧戊环-2-酮的方法
公开(公告)号：US4428806A
公开(公告)日：1984-01-31
申请号：US426158
申请日：1982-09-28
申请人： Fumio Sakamoto , Shoji Ikeda , Goro Tsukamoto , Isamu Utsumi
发明人： Fumio Sakamoto , Shoji Ikeda , Goro Tsukamoto , Isamu Utsumi
IPC分类号： A61K31/43 , A61P31/04 , A61P43/00 , C07D317/40 , C07D317/46 , C07D499/32 , B01J19/12
CPC分类号： C07D317/46 , C07D317/40
摘要： A process for producing a brominated 1,3-dioxolen-2-one of the following general formula (I) ##STR1## wherein R.sub.1 represents a hydrogen atom, a methyl group, or an aryl group, and R.sub.2 represents a hydrogen atom, or R.sub.1 and R.sub.2 may be bonded together to form --(CH.sub.2).sub.n -- in which n represents an integer of 3 to 5, which comprises reacting a compound of the following formula (II) ##STR2## wherein R.sub.1 and R.sub.2 are as defined, with bromine under radical generating conditions.
摘要翻译：制备以下通式（I）的溴化1,3-二氧杂环戊烯-2-酮的方法其中R 1表示氢原子，甲基或芳基，R 2表示氢原子或R 1和R 2可以键合在一起形成 - （CH 2）n - ，其中n表示3至5的整数，其包括使下式（II）的化合物其中R 1和 R 2如定义，溴在自由基产生条件下。

9. 发明授权

US4389408A Novel ampicillin esters and production thereof 失效
标题翻译：新型氨苄西林酯及其生产
公开(公告)号：US4389408A
公开(公告)日：1983-06-21
申请号：US327735
申请日：1981-12-04
申请人： Fumio Sakamoto , Shoji Ikeda , Goro Tsukamoto , Isamu Utsumi
发明人： Fumio Sakamoto , Shoji Ikeda , Goro Tsukamoto , Isamu Utsumi
IPC分类号： C07D317/40 , C07D317/64 , C07D499/00 , C07D499/12 , C07D499/32 , C07D499/42 , C07D499/68 , A61K31/43
CPC分类号： C07D317/40 , C07D317/64 , C07D499/00
摘要： A novel Ampicillin ester of the general formula ##STR1## wherein R.sub.1 represents a hydrogen atom, a methyl group or an aryl group, and R.sub.2 represents a hydrogen atom or may be taken together with R.sub.1 to form a divalent carbon chain residue, or its acid addition salt.The novel Ampicillin ester or its acid addition salt is prepared by (1) reacting a corresponding 6-N-acylamino penicillanic acid (II) or its salt with a compound of the formula ##STR2## wherein R.sub.1 and R.sub.2 are as defined above, and X is a halogen atom, or reacting a compound of the formula ##STR3## wherein R.sub.1 and R.sub.2 are as defined above, or its acid addition salt with a corresponding carboxylic acid (VI) or its reactive derivative, (2) thereafter, if required, when the resulting compound has the protected amino group or the group convertible to an amino group, deprotecting the protected amino group or converting said convertible group to an amino group, and (3) if further required, converting the product to an acid addition salt.The present invention provides also an antibacterial agent comprising the novel Ampicillin ester and a method for the treatment of infectious disease.
摘要翻译：一种通式为“IMAGE”的新型氨苄青霉素酯，其中R 1表示氢原子，甲基或芳基，R 2表示氢原子，或可与R 1一起形成二价碳链残基，或其酸加盐。通过（1）使相应的6-N-酰基氨基青霉烷酸（II）或其盐与式（III）的化合物反应，其中R 1和R 2如上所定义，制备新型氨苄青霉素酯或其酸加成盐或者其中R1和R2如上所定义的式（VI）化合物或其酸加成盐与相应的羧酸（Ⅵ）或其反应性衍生物反应， 2）此后，如果需要，当所得化合物具有被保护的氨基或可转化为氨基的基团时，将保护的氨基脱保护或将所述可转换基团转化为氨基，和（3）如果需要，将产物加酸加成盐。本发明还提供了包含新型氨苄青霉素酯的抗菌剂和治疗感染性疾病的方法。

10. 发明授权

US09799822B2 Magnetic memory element and magnetic memory 有权
公开(公告)号：US09799822B2
公开(公告)日：2017-10-24
申请号：US14118093
申请日：2012-04-19
申请人： Shunsuke Fukami , Nobuyuki Ishiwata , Tadahiko Sugibayashi , Hideo Ohno , Shoji Ikeda , Michihiko Yamanouchi
发明人： Shunsuke Fukami , Nobuyuki Ishiwata , Tadahiko Sugibayashi , Hideo Ohno , Shoji Ikeda , Michihiko Yamanouchi
IPC分类号： H01L29/82 , H01L43/02 , H01L27/22 , G11C11/16 , H01L43/08
CPC分类号： H01L43/02 , G11C11/161 , H01L27/228 , H01L43/08
摘要： A disclosed magnetic memory element includes: a magnetization free layer formed of a ferromagnetic substance having perpendicular magnetic anisotropy; a response layer provided so as to be opposed to the magnetization free layer and formed of a ferromagnetic substance having perpendicular magnetic anisotropy; a non-magnetic layer provided so as to be opposed to the response layer on a side opposite to the magnetization free layer and formed of a non-magnetic substance; and a reference layer provided so as to be opposed to the non-magnetic layer on a side opposite to the response layer and formed of a ferromagnetic substance having perpendicular magnetic anisotropy. The magnetization free layer includes a first magnetization fixed region and a second magnetization fixed region which have magnetization fixed in directions antiparallel to each other, and a magnetization free region in which a magnetization direction is variable.

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