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1. 发明授权

US07750367B2 Semiconductor member, manufacturing method thereof, and semiconductor device 失效
标题翻译：半导体元件及其制造方法以及半导体器件
公开(公告)号：US07750367B2
公开(公告)日：2010-07-06
申请号：US11711711
申请日：2007-02-28
申请人： Kazuya Notsu , Kiyofumi Sakaguchi , Nobuhiko Sato , Hajime Ikeda , Shoji Nishida
发明人： Kazuya Notsu , Kiyofumi Sakaguchi , Nobuhiko Sato , Hajime Ikeda , Shoji Nishida
IPC分类号： H01L29/165 , H01L29/786
CPC分类号： H01L29/78687 , H01L21/02381 , H01L21/0245 , H01L21/02455 , H01L21/02502 , H01L21/02513 , H01L21/0262 , H01L21/76259 , H01L29/1054
摘要： An SiGe layer is grown on a silicon substrate. The SiGe layer or the silicon substrate and SiGe layer are porosified by anodizing the SiGe layer to form a strain inducing porous layer or a porous silicon layer and strain inducing porous layer. An SiGe layer and strained silicon layer are formed on the resultant structure. The SiGe layer in the stacking growth step only needs to be on the uppermost surface of the porous layer. For this reason, an SiGe layer with a low defect density and high concentration can be formed. Since the SiGe layer on the strain inducing porous layer can achieve a low defect density without lattice mismatching. Hence, a high-quality semiconductor substrate having a high strained silicon layer can be obtained.
摘要翻译： SiGe层生长在硅衬底上。通过阳极氧化SiGe层来形成SiGe层或硅衬底和SiGe层以形成应变诱导多孔层或多孔硅层和应变诱导多孔层。在所得结构上形成SiGe层和应变硅层。层叠生长步骤中的SiGe层仅需要在多孔层的最上表面上。因此，可以形成具有低缺陷密度和高浓度的SiGe层。由于应变诱导多孔层上的SiGe层可以实现低缺陷密度而没有晶格失配。因此，可以获得具有高应变硅层的高质量半导体衬底。

2. 发明申请

US20100134313A1 ELECTRON-EMITTING DEVICE AND DISPLAY PANEL INCLUDING THE SAME 失效
标题翻译：电子发射装置和包括其的显示面板
公开(公告)号：US20100134313A1
公开(公告)日：2010-06-03
申请号：US12627893
申请日：2009-11-30
申请人： Naofumi Aoki , Shoji Nishida
发明人： Naofumi Aoki , Shoji Nishida
IPC分类号： G08B5/00 , H01J1/00 , H01J61/94
CPC分类号： H01J1/3044 , H01J1/304 , H01J1/3046 , H01J9/025 , H01J31/127 , H01J2201/30446 , H01J2201/30492 , H01J2201/30496 , H01J2329/0439 , H01J2329/0471 , H01J2329/0473
摘要： An electron-emitting device includes an electroconductive member and a lanthanum boride layer on the electroconductive member and further includes an oxide layer between the electroconductive member and the lanthanum boride layer. The oxide layer can contain a lanthanum element. The lanthanum boride layer can be overlaid with a lanthanum oxide layer.
摘要翻译：电子发射器件包括在导电元件上的导电元件和硼化镧层，并且还包括在导电元件和硼化镧层之间的氧化物层。氧化物层可以含有镧元素。硼化镧层可以覆盖有氧化镧层。

3. 发明授权

US07642179B2 Semiconductor substrate and manufacturing method for the same 失效
标题翻译：半导体衬底及其制造方法相同
公开(公告)号：US07642179B2
公开(公告)日：2010-01-05
申请号：US11199597
申请日：2005-08-08
申请人： Hajime Ikeda , Kazuya Notsu , Nobuhiko Sato , Shoji Nishida
发明人： Hajime Ikeda , Kazuya Notsu , Nobuhiko Sato , Shoji Nishida
IPC分类号： H01L21/20
CPC分类号： H01L21/02381 , H01L21/0245 , H01L21/02513 , H01L21/02532 , H01L21/02658 , H01L21/3063 , H01L21/30635
摘要： A method of manufacturing a semiconductor substrate includes a growing step of growing a second single crystalline semiconductor on a first single crystalline semiconductor, a blocking layer forming step of forming a blocking layer on the second single crystalline semiconductor, and a relaxing step of generating crystal defects at a portion deeper than the blocking layer to relax a stress acting on the second single crystalline semiconductor. The blocking layer includes, e.g., a porous layer, and prevents the crystal defects at the portion deeper than the blocking layer from propagating to the surface of the second single crystalline semiconductor.
摘要翻译：一种制造半导体衬底的方法包括在第一单晶半导体上生长第二单晶半导体的生长步骤，在第二单晶半导体上形成阻挡层的阻挡层形成步骤以及产生晶体缺陷的松弛步骤在比阻挡层更深的部分放松作用在第二单晶半导体上的应力。阻挡层包括例如多孔层，并且防止在比阻挡层更深的部分处的晶体缺陷传播到第二单晶半导体的表面。

4. 发明申请

US20090284123A1 ELECTRON-EMITTING DEVICE AND IMAGE DISPLAY APPARATUS 审中-公开
标题翻译：电子发射装置和图像显示装置
公开(公告)号：US20090284123A1
公开(公告)日：2009-11-19
申请号：US12429654
申请日：2009-04-24
申请人： Shoji Nishida , Koki Nukanobu , Takuto Moriguchi , Takeo Tsukamoto
发明人： Shoji Nishida , Koki Nukanobu , Takuto Moriguchi , Takeo Tsukamoto
IPC分类号： H01J1/00
CPC分类号： H01J1/316 , H01J9/027 , H01J31/127 , H01J2201/3165 , H01J2329/0489
摘要： An image display apparatus uses electron-emitting devices each having: a pair of device electrodes on an insulating substrate; and an electroconductive film connecting the device electrodes. The insulating substrate has concave portions in a gap between the device electrodes. The film has opening portions having a first gap in a region adjacent to the opening portions along such a gap. A carbon film having a second gap is formed in the first gap and has extending portions extending from side surfaces of the concave portions toward the bottom. The extending portions of the adjacent carbon films are not coupled.
摘要翻译：图像显示装置使用在绝缘基板上具有：一对器件电极的电子发射器件; 以及连接器件电极的导电膜。绝缘基板在器件电极之间的间隙中具有凹部。该膜具有沿着这样的间隙在与开口部分相邻的区域中具有第一间隙的开口部分。具有第二间隙的碳膜形成在第一间隙中，并且具有从凹部的侧表面向底部延伸的延伸部分。相邻碳膜的延伸部分不连接。

5. 发明申请

US20070272944A1 Semiconductor member, manufacturing method thereof, and semiconductor device 失效
标题翻译：半导体元件及其制造方法以及半导体器件
公开(公告)号：US20070272944A1
公开(公告)日：2007-11-29
申请号：US11711711
申请日：2007-02-28
申请人： Kazuya Notsu , Kiyofumi Sakaguchi , Nobuhiko Sato , Hajime Ikeda , Shoji Nishida
发明人： Kazuya Notsu , Kiyofumi Sakaguchi , Nobuhiko Sato , Hajime Ikeda , Shoji Nishida
IPC分类号： H01L31/00
CPC分类号： H01L29/78687 , H01L21/02381 , H01L21/0245 , H01L21/02455 , H01L21/02502 , H01L21/02513 , H01L21/0262 , H01L21/76259 , H01L29/1054
摘要： An SiGe layer is grown on a silicon substrate. The SiGe layer or the silicon substrate and SiGe layer are porosified by anodizing the SiGe layer to form a strain inducing porous layer or a porous silicon layer and strain inducing porous layer. An SiGe layer and strained silicon layer are formed on the resultant structure. The SiGe layer in the stacking growth step only needs to be on the uppermost surface of the porous layer. For this reason, an SiGe layer with a low defect density and high concentration can be formed. Since the SiGe layer on the strain inducing porous layer can achieve a low defect density without lattice mismatching. Hence, a high-quality semiconductor substrate having a high strained silicon layer can be obtained.
摘要翻译： SiGe层生长在硅衬底上。通过阳极氧化SiGe层来形成SiGe层或硅衬底和SiGe层以形成应变诱导多孔层或多孔硅层和应变诱导多孔层。在所得结构上形成SiGe层和应变硅层。层叠生长步骤中的SiGe层仅需要在多孔层的最上表面上。因此，可以形成具有低缺陷密度和高浓度的SiGe层。由于应变诱导多孔层上的SiGe层可以实现低缺陷密度而没有晶格失配。因此，可以获得具有高应变硅层的高质量半导体衬底。

6. 发明授权

US07077901B2 Process for producing single crystal silicon wafers 失效
标题翻译：制造单晶硅片的工艺
公开(公告)号：US07077901B2
公开(公告)日：2006-07-18
申请号：US10402214
申请日：2003-03-31
申请人： Katsumi Nakagawa , Takao Yonehara , Kazuaki Ohmi , Shoji Nishida
发明人： Katsumi Nakagawa , Takao Yonehara , Kazuaki Ohmi , Shoji Nishida
IPC分类号： C30B19/02
CPC分类号： C30B19/12 , C30B19/02 , C30B29/06
摘要： A process for producing a single crystal silicon wafer, comprising the steps of forming a porous layer on a single crystal silicon substrate comprising a silicon whose concentration of mass number 28 silicon isotope is less than 92.5% on an average; dissolving a starting silicon whose concentration of mass number 28 silicone isotope whose mass number is more than 98% on an average in a melt for liquid-phase epitaxy until said starting silicon becomes to be a supersaturated state in said melt under reductive atmosphere maintained at high temperature: immersing said single crystal silicon substrate in said melt to grow a single crystal silicon layer on the surface of said porous layer of said single crystal silicon substrate; and peeling said single crystal silicon layer from a portion of said porous layer.
摘要翻译：一种制造单晶硅晶片的方法，包括以下步骤：在单晶硅衬底上形成多孔层，该单晶硅衬底包含平均浓度为28％硅同位素的硅的浓度小于92.5％的硅; 将其质量数为28的硅同位素的质量数大于98％的起始硅溶解在用于液相外延的熔体中，直到所述起始硅在所述熔体中在还原气氛保持在高温下变为过饱和状态为止温度：将所述单晶硅衬底浸入所述熔体中以在所述单晶硅衬底的所述多孔层的表面上生长单晶硅层; 以及从所述多孔层的一部分剥离所述单晶硅层。

7. 发明授权

US07048797B2 Liquid-phase growth process and liquid-phase growth apparatus 失效
标题翻译：液相生长过程和液相生长装置
公开(公告)号：US07048797B2
公开(公告)日：2006-05-23
申请号：US10665075
申请日：2003-09-22
申请人： Masaki Mizutani , Takehiko Yoshino , Shoji Nishida
发明人： Masaki Mizutani , Takehiko Yoshino , Shoji Nishida
IPC分类号： C30B19/06
CPC分类号： C30B19/06 , C30B19/02 , C30B29/28
摘要： A liquid-phase growth process for continuously growing a crystal film on a plurality of substrates with respect to their one side surfaces, characterized in that said plurality of substrates are kept afloat on the surface of a flowing solution for liquid-phase epitaxy which comprises a crystallizing material dissolved in a solvent in a supersaturated state and which is flowing in a solution flow passage, and while said plurality of substrates being moved by virtue of said flowing solution in said solution flow passage, a crystal film is grown on the surfaces of said plurality of substrates which are in contact with said flowing solution. A liquid-phase growth apparatus suitable for practicing said liquid-phase growth process.
摘要翻译：一种用于相对于其一个侧表面在多个基板上连续生长晶体膜的液相生长方法，其特征在于，所述多个基板保持在用于液相外延的流动溶液的表面上，所述流动溶液包括结晶材料溶解在过饱和状态的溶剂中，并且在溶液流动通道中流动，并且当所述多个基板通过所述流动溶液在所述溶液流动通道中移动时，在所述溶液流动通道的表面上生长晶体膜与所述流动溶液接触的多个基板。适用于实施所述液相生长过程的液相生长装置。

8. 发明申请

US20060035447A1 Semiconductor substrate and manufacturing method for the same 失效
标题翻译：半导体衬底及其制造方法相同
公开(公告)号：US20060035447A1
公开(公告)日：2006-02-16
申请号：US11199597
申请日：2005-08-08
申请人： Hajime Ikeda , Kazuya Notsu , Nobuhiko Sato , Shoji Nishida
发明人： Hajime Ikeda , Kazuya Notsu , Nobuhiko Sato , Shoji Nishida
IPC分类号： H01L21/20 , G12B21/02
CPC分类号： H01L21/02381 , H01L21/0245 , H01L21/02513 , H01L21/02532 , H01L21/02658 , H01L21/3063 , H01L21/30635
摘要： A method of manufacturing a semiconductor substrate includes a growing step of growing a second single crystalline semiconductor on a first single crystalline semiconductor, a blocking layer forming step of forming a blocking layer on the second single crystalline semiconductor, and a relaxing step of generating crystal defects at a portion deeper than the blocking layer to relax a stress acting on the second single crystalline semiconductor. The blocking layer includes, e.g., a porous layer, and prevents the crystal defects at the portion deeper than the blocking layer from propagating to the surface of the second single crystalline semiconductor.
摘要翻译：一种制造半导体衬底的方法包括在第一单晶半导体上生长第二单晶半导体的生长步骤，在第二单晶半导体上形成阻挡层的阻挡层形成步骤以及产生晶体缺陷的松弛步骤在比阻挡层更深的部分放松作用在第二单晶半导体上的应力。阻挡层包括例如多孔层，并且防止在比阻挡层更深的部分处的晶体缺陷传播到第二单晶半导体的表面。

9. 发明授权

US06953506B2 Wafer cassette, and liquid phase growth system and liquid-phase growth process which make use of the same 失效
标题翻译：晶圆盒，液相生长系统和液相生长工艺，使用它们
公开(公告)号：US06953506B2
公开(公告)日：2005-10-11
申请号：US09978633
申请日：2001-10-18
申请人： Masaaki Iwane , Tetsuro Saito , Tatsumi Shoji , Makoto Iwakami , Takehito Yoshino , Shoji Nishida , Noritaka Ukiyo , Masaki Mizutani
发明人： Masaaki Iwane , Tetsuro Saito , Tatsumi Shoji , Makoto Iwakami , Takehito Yoshino , Shoji Nishida , Noritaka Ukiyo , Masaki Mizutani
IPC分类号： C30B19/06 , H01L21/00 , H01L21/673 , H01L21/8242
CPC分类号： H01L21/67086 , H01L21/67207 , H01L21/67236 , H01L21/6732 , H01L21/67326 , H01L21/67346 , H01L31/1804 , H01L31/1892 , Y02E10/547 , Y02P70/521 , Y10S117/911 , Y10S414/135 , Y10T117/10 , Y10T117/1024
摘要： A wafer cassette comprises a holding member having a depression corresponding to the shape of the substrate, and a cover having an opening smaller than the surface size of the substrate. The substrate is to be held in the depression by means of the holding member and the cover, and the substrate is to be covered at its one-side surface, side and all peripheral region of the other-side surface, with the holding member at its depression and with the cover at the edge of its opening. Also disclosed are a liquid-phase growth system and a liquid-phase growth process which make use of the wafer cassette.
摘要翻译：晶片盒包括具有对应于基板形状的凹部的保持构件和具有小于基板的表面尺寸的开口的盖。通过保持构件和盖子将基板保持在凹部中，并且基板被覆盖在另一侧表面的单侧表面，侧面和所有周边区域，保持构件位于它的凹陷和盖子在其开口的边缘。还公开了利用晶片盒的液相生长系统和液相生长工艺。

10. 发明申请

US20050109388A1 Photovoltaic device and manufacturing method thereof 审中-公开
标题翻译：光伏器件及其制造方法
公开(公告)号：US20050109388A1
公开(公告)日：2005-05-26
申请号：US10971130
申请日：2004-10-25
申请人： Tsutomu Murakami , Shoji Nishida
发明人： Tsutomu Murakami , Shoji Nishida
IPC分类号： H01L31/04 , H01L31/00 , H01L31/0236 , H01L31/0368 , H01L31/075 , H01L31/077 , H01L31/18
CPC分类号： H01L31/02363 , H01L31/03682 , H01L31/077 , H01L31/182 , Y02B10/12 , Y02E10/546 , Y02P70/521
摘要： There is provided a photovoltaic device in which at least one pin-junction is formed in a thin film semiconductor deposited on a substrate, the substrate including: a base including polycrystalline silicon; and a polycrystalline silicon layer formed on the base by liquid phase growth, in which at least a part of a surface of the polycrystalline silicon layer has unevenness composed of facet surfaces. The photovoltaic device prevents a reduction in photoelectric conversion efficiency due to the absence of preferable unevenness, an increase in cost due to the use of an expensive material, and a reduction in throughput in the photovoltaic device, and has a preferable characteristic and high productivity.
摘要翻译：提供一种光电器件，其中在沉积在衬底上的薄膜半导体中形成至少一个pin-junction，所述衬底包括：包括多晶硅的衬底; 以及通过液相生长在基底上形成的多晶硅层，其中多晶硅层的至少一部分表面具有由小面表面构成的凹凸。光伏器件由于不存在优选的不均匀性而导致光电转换效率的降低，由于使用昂贵的材料而导致的成本增加，并且光电器件的生产量降低，并且具有优选的特性和高的生产率。

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