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1. 发明授权

US08119430B2 Method of manufacturing semiconductor nanowire sensor device and semiconductor nanowire sensor device manufactured according to the method 有权
标题翻译：根据该方法制造半导体纳米线传感器器件和半导体纳米线传感器器件的方法
公开(公告)号：US08119430B2
公开(公告)日：2012-02-21
申请号：US12494846
申请日：2009-06-30
申请人： Chan-Woo Park , Chang-Geun Ahn , Jong-Heon Yang , In-Bok Baek , Chil-Seong Ah , An-Soon Kim , Tae-Youb Kim , Gun-Yong Sung , Seon-Hee Park
发明人： Chan-Woo Park , Chang-Geun Ahn , Jong-Heon Yang , In-Bok Baek , Chil-Seong Ah , An-Soon Kim , Tae-Youb Kim , Gun-Yong Sung , Seon-Hee Park
IPC分类号： H01L21/00
CPC分类号： H01L29/0665 , B82Y10/00 , B82Y15/00 , G01N27/127 , H01L29/0673 , H01L29/66439 , H01L29/772 , Y10S977/959
摘要： Provided are a method of manufacturing a semiconductor nanowire sensor device and a semiconductor nanowire sensor device manufactured according to the method. The method includes preparing a first conductive type single crystal semiconductor substrate, forming a line-shaped first conductive type single crystal pattern from the first conductive type single crystal semiconductor substrate, forming second conductive type epitaxial patterns on both sidewalls of the first conductive type single crystal pattern, and forming source and drain electrodes at both ends of the second conductive type epitaxial patterns.
摘要翻译：提供一种制造根据该方法制造的半导体纳米线传感器装置和半导体纳米线传感器装置的方法。该方法包括：制备第一导电型单晶半导体衬底，从第一导电型单晶半导体衬底形成线状第一导电型单晶图案，在第一导电型单晶体的两个侧壁上形成第二导电型外延图案图案，并且在第二导电型外延图案的两端形成源电极和漏电极。

2. 发明申请

US20110151139A1 METHOD FOR SELECTIVELY FUNCTIONALIZING NON-MODIFIED SOLID SURFACE AND METHOD FOR IMMOBILIZING ACTIVE MATERIAL ON THE FUNCTIONALIZED SOLID SURFACE 审中-公开
标题翻译：用于选择性地功能化非改性固体表面的方法和在功能化固体表面上固定活性材料的方法
公开(公告)号：US20110151139A1
公开(公告)日：2011-06-23
申请号：US12944655
申请日：2010-11-11
申请人： An Soon KIM , Wan Joong Kim , Chil Seong Ah , Chan Woo Park , Jong Heon Yang , Tae Youb Kim , Chang Geun Ahn , Gun Yong Sung
发明人： An Soon KIM , Wan Joong Kim , Chil Seong Ah , Chan Woo Park , Jong Heon Yang , Tae Youb Kim , Chang Geun Ahn , Gun Yong Sung
IPC分类号： B05D3/06 , B05D3/00 , B05D3/10
CPC分类号： G01N33/54353 , B01J2219/00612 , B01J2219/00637 , B01J2219/00725
摘要： A method for selectively functionalizing a non-modified solid surface to create a photoresponsive coating layer includes: functionalizing a non-modified solid surface only, which is not oxidized and nitrified, with hydrogen; forming an EGPA coating layer on the non-modified solid surface functionalized with hydrogen using light; forming an EGA coating layer by removing an amine protecting group or an amine salt from the EGPA coating layer; and forming a coating layer having a photoresponsive functional group on the non-modified solid surface using the EGA coating layer.
摘要翻译：用于选择性官能化未改性固体表面以产生光响应涂层的方法包括：仅使用氢氧化和硝化官能化未改性的固体表面; 在使用光官能化的非改性固体表面上形成EGPA涂层; 通过从EGPA涂层去除胺保护基或胺盐形成EGA涂层; 并且使用所述EGA涂层在所述未改性固体表面上形成具有光响应性官能团的涂层。

3. 发明授权

US07791095B2 Semiconductor light emitting diode 有权
标题翻译：半导体发光二极管
公开(公告)号：US07791095B2
公开(公告)日：2010-09-07
申请号：US10572486
申请日：2005-08-05
申请人： Nae Man Park , Kyung Hyun Kim , Tae Youb Kim , Gun Yong Sung
发明人： Nae Man Park , Kyung Hyun Kim , Tae Youb Kim , Gun Yong Sung
IPC分类号： H01L33/00
CPC分类号： H01L33/38
摘要： Provided is a semiconductor light emitting diode, in which a plurality of upper electrodes is formed on a surface of an upper doping layer or an emission layer and at least one lower electrode is formed on a surface of a lower doping layer or a substrate in a silicon-based light emitting diode or a nitride-based light emitting diode to enhance a spreading characteristic of current applied to the electrodes, thereby maximizing an emitting area of the emission layer and inducing an emission having a uniform intensity on an entire surface of the emission layer to further enhance the luminous efficiency of the light emitting diode.
摘要翻译：提供一种半导体发光二极管，其中在上掺杂层或发光层的表面上形成多个上电极，并且在下掺杂层或基板的表面上形成至少一个下电极硅基发光二极管或氮化物基发光二极管，以增强施加到电极的电流的扩展特性，从而使发射层的发射面积最大化并且在发射的整个表面上诱发具有均匀强度的发射层以进一步提高发光二极管的发光效率。

4. 发明授权

US07772587B2 Silicon-based light emitting diode for enhancing light extraction efficiency and method of fabricating the same 有权
标题翻译：用于提高光提取效率的硅基发光二极管及其制造方法
公开(公告)号：US07772587B2
公开(公告)日：2010-08-10
申请号：US12096764
申请日：2006-03-14
申请人： Kyung Hyun Kim , Nae Man Park , Chul Huh , Tae Youb Kim , Jae Heon Shin , Kwan Sik Cho , Gun Yong Sung
发明人： Kyung Hyun Kim , Nae Man Park , Chul Huh , Tae Youb Kim , Jae Heon Shin , Kwan Sik Cho , Gun Yong Sung
IPC分类号： H01L29/06 , H01L21/00
CPC分类号： H01L33/44 , H01L33/10 , H01L33/20 , H01L33/22 , H01L33/34 , H01L33/38 , H01L2933/0091
摘要： Due to the indirect transition characteristic of silicon semiconductors, the light extraction efficiency of a silicon-based light emitting diode is lower than that of a compound semiconductor-based light emitting diode. For this reason, there are difficulties in practically using and commercializing silicon-based light emitting diodes developed so far. Provided is a silicon-based light emitting including: a substrate with a lower electrode layer on a lower surface thereof; a lower doped layer that is formed on an upper surface of the substrate and supplies carriers to an emitting layer; the emitting layer that is a silicon semiconductor layer including silicon quantum dots or nanodots formed on the lower doped layer and has a light-emitting characteristic; an upper doped layer that is formed on the emitting layer and supplies carriers to the emitting layer; an upper electrode layer formed on the upper doped layer; and a surface structure including a surface pattern formed on the upper electrode layer, a surface structure including an upper electrode pattern and an upper doped pattern formed by patterning the upper electrode layer and the upper doped layer, or a surface structure including the surface pattern, the upper electrode pattern, and upper doped pattern, wherein the surface structure enhances the light extraction efficiency of light emitted from the emitting layer according to geometric optics.
摘要翻译：由于硅半导体的间接跃迁特性，硅基发光二极管的光提取效率低于基于化合物半导体的发光二极管的光提取效率。因此，实际上使用和商业化目前为止开发的硅基发光二极管存在困难。本发明提供一种硅基发光体，具有：下表面具有下电极层的基板; 下部掺杂层，其形成在所述衬底的上表面上并将载体提供给发光层; 所述发光层是包含形成在所述下掺杂层上的硅量子点或纳米点的具有发光特性的硅半导体层; 上部掺杂层，其形成在所述发光层上并将载流子提供给所述发光层; 形成在上掺杂层上的上电极层; 以及包括形成在上电极层上的表面图案的表面结构，包括通过图案化上电极层和上掺杂层形成的上电极图案和上掺杂图案的表面结构，或包括表面图案的表面结构，上电极图案和上掺杂图案，其中表面结构根据几何光学增强了从发光层发射的光的光提取效率。

5. 发明申请

US20090242913A1 SILICON BASED LIGHT EMITTING DIODE 有权
标题翻译：硅基发光二极管
公开(公告)号：US20090242913A1
公开(公告)日：2009-10-01
申请号：US11720987
申请日：2005-11-14
申请人： Tae-Youb Kim , Nae-Man Park , Kyung-Hyun Kim , Gun-Yong Sung
发明人： Tae-Youb Kim , Nae-Man Park , Kyung-Hyun Kim , Gun-Yong Sung
IPC分类号： H01L33/00
CPC分类号： H01L33/465 , H01L33/34 , H01L33/38
摘要： Provided is a highly efficient silicon-based light emitting diode (LED) including a Distributed Bragg Reflector (DBR), an n-type doping layer, and a p-type substrate structure. The silicon-based LED includes: a substrate having a p-type mesa substrate structure; an active layer that is formed on the substrate and has a first surface and a second surface opposite the first surface; a first reflective layer facing the first surface of the active layer; a second reflective layer that is located on either side of the p-type substrate structure and faces the second surface of the active layer; an n-type doping layer sandwiched between the active layer and the first reflective layer; a first electrode electrically connected to the n-type doping layer; and a second electrode electrically connected to the p-type substrate structure.
摘要翻译：提供了包括分布式布拉格反射器（DBR），n型掺杂层和p型衬底结构的高效硅基发光二极管（LED）。硅基LED包括：具有p型台面基板结构的基板; 活性层，其形成在所述基材上并具有与所述第一表面相对的第一表面和第二表面; 面向有源层的第一表面的第一反射层; 第二反射层，其位于p型衬底结构的任一侧并面向有源层的第二表面; 夹在有源层和第一反射层之间的n型掺杂层; 电连接到所述n型掺杂层的第一电极; 以及与p型基板结构电连接的第二电极。

6. 发明申请

US20090152597A1 BIOSENSOR AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：生物传感器及其制造方法
公开(公告)号：US20090152597A1
公开(公告)日：2009-06-18
申请号：US12195305
申请日：2008-08-20
申请人： Tae Youb KIM , Nae Man Park , Han Young Yu , Moon Gyu Jang , Jong Heon Yang
发明人： Tae Youb KIM , Nae Man Park , Han Young Yu , Moon Gyu Jang , Jong Heon Yang
IPC分类号： H01L29/12 , H01L21/00
CPC分类号： G01N27/4146 , G01N27/4145 , Y10S977/71 , Y10S977/742 , Y10S977/963
摘要： Provided are a biosensor with a silicon nanowire and a method of manufacturing the same, and more particularly, a biosensor with a silicon nanowire including a defect region formed by irradiation of an electron beam, and a method of manufacturing the same. The biosensor includes: a silicon substrate; a source region disposed on the silicon substrate; a drain region disposed on the silicon substrate; and a silicon nanowire disposed on the source region and the drain region, and having a defect region formed by irradiation of an electron beam. Therefore, by irradiating a certain region of a high-concentration doped silicon nanowire with an electron beam to lower electron mobility in the certain region, it is possible to maintain a low contact resistance between the silicon nanowire and a metal electrode and to lower operation current of a biomaterial detection part, thereby improving sensitivity of the biosensor.
摘要翻译：本发明提供一种具有硅纳米线的生物传感器及其制造方法，更具体地，涉及具有通过电子束照射形成的缺陷区域的硅纳米线的生物传感器及其制造方法。生物传感器包括：硅衬底; 设置在所述硅基板上的源极区域; 设置在所述硅基板上的漏极区域; 以及设置在源极区域和漏极区域上的硅纳米线，并且具有通过电子束的照射而形成的缺陷区域。因此，通过用特定的区域照射具有电子束的高浓度掺杂的硅纳米线的特定区域来降低电子迁移率，可以保持硅纳米线与金属电极之间的低接触电阻并降低工作电流的生物材料检测部件，从而提高生物传感器的灵敏度。

7. 发明申请

US20080124854A1 METHOD FOR FABRICATING A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR DEVICE FABRICATED BY THE METHOD 审中-公开
标题翻译：用于制造半导体器件的方法和由该方法制成的半导体器件
公开(公告)号：US20080124854A1
公开(公告)日：2008-05-29
申请号：US11744927
申请日：2007-05-07
申请人： Chel-Jong CHOI , Moon-Gyu JANG , Yark-Yeon KIM , Tae-Youb KIM , Myung-Sim JUN , Seong-Jae LEE
发明人： Chel-Jong CHOI , Moon-Gyu JANG , Yark-Yeon KIM , Tae-Youb KIM , Myung-Sim JUN , Seong-Jae LEE
IPC分类号： H01L29/76 , H01L21/8234
CPC分类号： H01L21/28088 , H01L29/4966 , H01L29/78
摘要： A method for fabricating a semiconductor device includes forming a gate insulation layer over a substrate, forming a conductive compound containing layer over the gate insulation layer, etching the conductive compound containing layer and the gate insulation layer to form a gate structure, forming a metal layer over the resultant structure obtained after the etching, and letting the metal layer to react with silicon from the substrate to form source and drain regions comprising a metal silicide layer over the substrate exposed on both sides of the gate structure, wherein the conductive compound containing layer does not react with the metal layer.
摘要翻译：一种制造半导体器件的方法，包括在衬底上形成栅极绝缘层，在栅极绝缘层上形成导电化合物含有层，蚀刻导电化合物层和栅极绝缘层以形成栅极结构，形成金属层在蚀刻之后获得的结果结构上，并且使金属层与来自衬底的硅反应以形成在暴露于栅极结构的两侧的衬底上的包含金属硅化物层的源区和漏区，其中导电化合物含有层不与金属层反应。

8. 发明授权

US06693705B2 Apparatus for measuring slant angle of solid immersion lens 失效
标题翻译：用于测量固体浸没透镜的倾斜角度的装置
公开(公告)号：US06693705B2
公开(公告)日：2004-02-17
申请号：US10163135
申请日：2002-06-04
申请人： Yeung Joon Sohn , Gee Pyeong Han , Yark Yeon Kim , Tae Youb Kim , Mun Cheol Paek , Kyoung Ik Cho
发明人： Yeung Joon Sohn , Gee Pyeong Han , Yark Yeon Kim , Tae Youb Kim , Mun Cheol Paek , Kyoung Ik Cho
IPC分类号： G01B900
CPC分类号： G01B11/26
摘要： The present invention relates to an apparatus for measuring a slant angle in a solid immersion lens. In a near-field optical data storage head for storing/reading data using a solid immersion lens (SIL), a parallel light is formed within the plane of the solid immersion lens and the slant angle of the parallel light is then measured using the angle measurement principle of the autocollimator in order to measure the slant angle of the solid immersion lens. For this, the present invention includes an optical system for generating the parallel light within the solid immersion lens, and a unit for measuring the slant angle of the solid immersion lens using a location detection unit. An incident light becomes the parallel light by the optical system and the curved face of the solid immersion lens. The reflected light is also focused on the location detection unit. The location detection unit converts the reflection angle of the reflecting light into a location value to calculate the angle value.
摘要翻译：本发明涉及一种用于测量固体浸没透镜中的倾斜角度的装置。在用于使用固体浸没透镜（SIL）存储/读取数据的近场光学数据存储头中，在固体浸没透镜的平面内形成平行光，然后使用角度测量平行光的倾斜角度自动准直仪的测量原理是为了测量固体浸没透镜的倾斜角度。为此，本发明包括用于在固体浸没透镜内产生平行光的光学系统和用于使用位置检测单元来测量固体浸没透镜的倾斜角度的单元。入射光通过光学系统和固体浸没透镜的曲面变成平行光。反射光也聚焦在位置检测单元上。位置检测单元将反射光的反射角转换为位置值以计算角度值。

9. 发明授权

US08426900B2 Sensing device 有权
标题翻译：感应装置
公开(公告)号：US08426900B2
公开(公告)日：2013-04-23
申请号：US13122273
申请日：2009-05-27
申请人： Chang Geun Ahn , Chan Woo Park , Jong Heon Yang , In Bok Baek , Chil Seong Ah , An Soon Kim , Tae Youb Kim , Gun Yong Sung
发明人： Chang Geun Ahn , Chan Woo Park , Jong Heon Yang , In Bok Baek , Chil Seong Ah , An Soon Kim , Tae Youb Kim , Gun Yong Sung
IPC分类号： G01N27/403
CPC分类号： G01N27/4145 , G01N27/4146
摘要： Provided is a sensing device, which includes a reactive material layer (260) responding to a specific functional group in a fluid, a sensing capacitor (B) including first and second electrodes disposed on and under an insulating layer (230), the first electrode being disposed under the reactive material layer (260), and a field effect transistor including a gate electrode connected with the first electrode of the sensing capacitor. Here, the reactive material layer (260) is formed in a conductive three-dimensional structure to widen a surface area. Thus, the sensing device may have high sensitivity by maximizing a capacitor sharing effect and a change in voltage amount applied to a gate, which may be caused by widening a surface area of the conductive three-dimensional structure with respect to the fluid flow.
摘要翻译：提供了一种感测装置，其包括响应于流体中的特定官能团的反应性材料层（260），包括设置在绝缘层（230）上和下方的第一和第二电极的感测电容器（B），第一电极设置在反应性材料层（260）下方的场效应晶体管，以及包括与感测电容器的第一电极连接的栅电极的场效应晶体管。这里，反应性材料层（260）形成为导电三维结构以扩大表面积。因此，感测装置可以通过最大化电容器共享效应和施加到栅极的电压量的变化而具有高灵敏度，这可能是通过相对于流体流动扩大导电三维结构的表面积而引起的。

10. 发明授权

US08394657B2 Biosensor using nanodot and method of manufacturing the same 有权
标题翻译：使用纳米点的生物传感器及其制造方法
公开(公告)号：US08394657B2
公开(公告)日：2013-03-12
申请号：US13240943
申请日：2011-09-22
申请人： Tae Youb Kim , Chil Seong Ah , Chang Geun Ahn , Han Young Yu , Jong Heon Yang , Moon Gyu Jang
发明人： Tae Youb Kim , Chil Seong Ah , Chang Geun Ahn , Han Young Yu , Jong Heon Yang , Moon Gyu Jang
IPC分类号： H01L29/72
CPC分类号： G01N33/5432 , G01N27/4145 , G01N27/4146 , G01N33/5438 , Y10S977/721 , Y10S977/784 , Y10S977/938
摘要： A biosensor using a nanodot and a method of manufacturing the same are provided. A silicon nanowire can be formed by a CMOS process to reduce manufacturing costs. In addition, an electrically charged nanodot is coupled to a target molecule to be detected, in order to readily change conductivity of the silicon nanowire, thereby making it possible to implement a biosensor capable of providing good sensitivity and being manufactured at a low cost.
摘要翻译：提供了使用纳米点的生物传感器及其制造方法。可以通过CMOS工艺形成硅纳米线，以降低制造成本。此外，为了容易地改变硅纳米线的导电性，带电的纳米点被耦合到待检测的靶分子，从而可以实现能够提供良好的灵敏度并以低成本制造的生物传感器。

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