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1. 发明申请

US20120306807A1 BIOSENSOR 审中-公开
标题翻译：生物传感器
公开(公告)号：US20120306807A1
公开(公告)日：2012-12-06
申请号：US13475845
申请日：2012-05-18
申请人： Chang Geun AHN
发明人： Chang Geun AHN
IPC分类号： G06F3/044 , G09G3/36
CPC分类号： A61B5/145 , A61B5/05 , A61B5/14507
摘要： Disclosed is a biosensor, including: a biochip to which a probe molecule is fixed on a wall thereof and into which a target molecule is injected; and a capacitive touch panel for detecting a reaction of the probe molecule in the biochip and the injected target molecule.
摘要翻译：公开了一种生物传感器，包括：将探针分子固定在其壁上并注入靶分子的生物芯片; 以及用于检测生物芯片中的探针分子与注射的靶分子的反应的电容式触摸面板。

2. 发明申请

US20110165557A1 APPARATUS AND METHOD FOR DETECTING BIOMOLECULES 有权
标题翻译：检测生物分子的装置和方法
公开(公告)号：US20110165557A1
公开(公告)日：2011-07-07
申请号：US13062146
申请日：2008-11-20
申请人： Chil-Seong Ah , Ansoon Kim , Chan-Woo Park , Chang-Geun Ahn , Jong-Heon Yang , In-Bok Baek , Taeyoub Kim , HyeKyoung Yang , Gun-Yong Sung , Seon-Hee Park , Han-Young Yu , Moon-Gyu Jang
发明人： Chil-Seong Ah , Ansoon Kim , Chan-Woo Park , Chang-Geun Ahn , Jong-Heon Yang , In-Bok Baek , Taeyoub Kim , HyeKyoung Yang , Gun-Yong Sung , Seon-Hee Park , Han-Young Yu , Moon-Gyu Jang
IPC分类号： C12Q1/70 , G01N27/00 , C12M1/34 , G01N27/416 , G01N33/53 , G01N33/00 , G01N33/573
CPC分类号： G01N33/54373 , B01L3/502761 , B01L2200/143 , B01L2300/0636 , B01L2300/0645 , B01L2300/0867 , B01L2300/163 , B01L2400/0415 , G01N27/4145
摘要： Provided are an apparatus and method for detecting biomolecules. The apparatus includes a FET having a substrate, a source electrode, a drain electrode, a channel region between the source and drain electrodes, and probe molecules fixed to the channel region, wherein the source and drain electrodes are separated on the substrate, a microfluid supplier selectively supplying one of a reference buffer solution of low ionic concentration and a reaction solution of high ionic concentration containing target molecules, to the channel region of the FET to which the probe molecules are fixed, and a biomolecule detector detecting the target molecules by measuring a first current value of the channel region of the FET, and a second current value of the channel region of the FET to which the target molecules and the probe molecules that bind to each other in the reaction solution of high ionic concentration are fixed.
摘要翻译：提供了用于检测生物分子的装置和方法。该装置包括具有基板，源电极，漏电极，源极和漏极之间的沟道区以及固定到沟道区的探针分子的FET，其中源极和漏极在衬底上分离，微流体供应商选择性地将低离子浓度的参考缓冲溶液和含有靶分子的高离子浓度的反应溶液中的一种提供给探针分子固定的FET的通道区域，以及通过测量来检测靶分子的生物分子检测器 FET的沟道区域的第一电流值和在高离子浓度的反应溶液中彼此结合的靶分子和探针分子的FET的沟道区域的第二电流值是固定的。

3. 发明申请

US20110139637A1 METHOD AND APPARATUS FOR MEASURING ISOELECTRIC POINT USING FIELD EFFECT TRANSISTOR 失效
标题翻译：使用场效应晶体管测量电压点的方法和装置
公开(公告)号：US20110139637A1
公开(公告)日：2011-06-16
申请号：US13058120
申请日：2008-12-16
申请人： Chil Seong Ah , Ansoon Kim , Chan Woo Park , Chang-Geun Ahn , Jong-Heon Yang , In Bok Baek , Taeyoub Kim , Gun Yong Sung , Seon-Hee Park , Han Young Yu
发明人： Chil Seong Ah , Ansoon Kim , Chan Woo Park , Chang-Geun Ahn , Jong-Heon Yang , In Bok Baek , Taeyoub Kim , Gun Yong Sung , Seon-Hee Park , Han Young Yu
IPC分类号： G01N27/403 , G01N27/414
CPC分类号： G01N27/4145
摘要： Provided are a method and apparatus for measuring an isoelectric point using a field effect transistor. The method includes providing a field effect transistor including a substrate, source and drain electrodes disposed on the substrate and spaced apart from each other, and a channel region between the source and drain electrodes, providing a first electrolyte solution having a first concentration to the channel region of the field effect transistor and measuring a first current value of the channel region between the source and drain electrodes, providing a second electrolyte solution having a second concentration greater than the first concentration and measuring a second current value of the channel region between the source and drain electrodes, and determining as the isoelectric point of the field effect transistor or a material disposed on the field effect transistor using a difference between the first and second current values.
摘要翻译：提供了使用场效应晶体管测量等电点的方法和装置。该方法包括提供场效应晶体管，该场效应晶体管包括衬底，设置在衬底上的源电极和漏极彼此间隔开的沟道区，以及在源电极和漏电极之间的沟道区域，提供具有第一浓度到沟道的第一电解质溶液区域，并且测量源极和漏极之间的沟道区的第一电流值，提供具有大于第一浓度的第二浓度的第二电解质溶液，并测量源极之间的沟道区的第二电流值和漏电极，并且使用第一和第二电流值之间的差来确定场效应晶体管的等电点或设置在场效应晶体管上的材料。

4. 发明申请

US20110068015A1 BIOSENSOR AND METHOD OF DRIVING THE SAME 失效
标题翻译：生物传感器及其驱动方法
公开(公告)号：US20110068015A1
公开(公告)日：2011-03-24
申请号：US12703939
申请日：2010-02-11
申请人： Chan Woo Park , Chang Geun Ahn , Chil Seong Ah , Tae Youb Kim , An Soon Kim , Jong Heon Yang , Gun Yong Sung
发明人： Chan Woo Park , Chang Geun Ahn , Chil Seong Ah , Tae Youb Kim , An Soon Kim , Jong Heon Yang , Gun Yong Sung
IPC分类号： G01N27/26 , G01F1/64
CPC分类号： G01N27/4145
摘要： Provided are a biosensor and a method of driving the same. The biosensor includes a transistor including a substrate including a source, a drain, and a channel formed between the source and the drain, a gate insulating layer formed on the channel, and a source electrode and a drain electrode respectively connected with the source and the drain, a fluid line for covering the transistor to have an inner space together with the transistor and in which a sample solution including target molecules flows, a reference electrode formed on an inner wall of the fluid line, and a probe molecule layer attached on the reference electrode and reacting with the target molecules. Accordingly, the reference electrode is formed on the inner wall of the fluid line, enabling miniaturization of the bio device. Also, the probe molecules are formed on the reference electrode to measure a change in threshold voltage according to a change in electric potential between the reference electrode and the gate insulating layer, such that the sensitivity and reaction rate can be remarkably improved.
摘要翻译：提供了一种生物传感器及其驱动方法。生物传感器包括晶体管，其包括基板，该基板包括源极，漏极和形成在源极和漏极之间的沟道，形成在沟道上的栅极绝缘层以及分别与源极和漏极连接的源极和漏极漏极，用于覆盖晶体管的流体线，其与晶体管一起具有内部空间，并且其中包含目标分子的样品溶液流动，形成在流体管线的内壁上的参考电极和附着在该流体管线上的探针分子层参考电极并与靶分子反应。因此，参考电极形成在流体管线的内壁上，使生物装置能够小型化。此外，探针分子形成在参考电极上，以根据参考电极和栅极绝缘层之间的电位的变化来测量阈值电压的变化，从而可以显着提高灵敏度和反应速率。

5. 发明申请

US20110053290A1 LIGHT ADDRESSING BIOSENSOR CHIP AND METHOD OF DRIVING THE SAME 审中-公开
标题翻译：光寻址生物传感器芯片及其驱动方法
公开(公告)号：US20110053290A1
公开(公告)日：2011-03-03
申请号：US12858158
申请日：2010-08-17
申请人： Chang Geun Ahn , Chan Woo Park , Jong Heon Yang , Tae Youb Kim , Chil Seong Ah , An Soon Kim , Bong Kyu Kim , Gun Yong Sung , Seon Hee Park
发明人： Chang Geun Ahn , Chan Woo Park , Jong Heon Yang , Tae Youb Kim , Chil Seong Ah , An Soon Kim , Bong Kyu Kim , Gun Yong Sung , Seon Hee Park
IPC分类号： G01N33/566 , H01L29/772
CPC分类号： G01N21/75 , B01L3/502761 , B01L2200/0668 , B01L2300/0645 , B01L2400/043 , G01N21/253 , G01N35/0098 , G01N2035/00158 , G01N2035/00237 , H01L27/14601
摘要： Provided is a biosensor chip. The biosensor chip includes a plurality of biosensor cells that are arranged in a matrix and selectively generate and output a sensed signal by addressing of external light, at least one sensing line that is simultaneously connected with the plurality of biosensor cells and transmits the sensed signal from one selected from the biosensor cells, and an output terminal that receives the sensed signal from the sensing line and outputs the sensed signal to an external reader. Thus, the biosensor cells are set in array in the biosensor chip without a separate driving unit, so that a process of manufacturing the biosensor chip is simplified. The biosensor cell to be sensed is selectively addressed through the external light, so that it is possible to reduce a price of the biosensor chip used as a disposable chip.
摘要翻译：提供了一种生物传感器芯片。生物传感器芯片包括多个生物传感器单元，其被布置在矩阵中并且通过寻址外部光选择性地生成和输出感测信号，至少一个感测线与多个生物传感器单元同时连接并且将感测信号从从生物传感器单元中选择的一个，以及从感测线接收感测信号并将感测到的信号输出到外部读取器的输出端子。因此，生物传感器单元在没有单独的驱动单元的情况下被设置在生物传感器芯片中，从而简化了生物传感器芯片的制造工艺。通过外部光选择性地寻址要感测的生物传感器单元，从而可以降低用作一次性芯片的生物传感器芯片的价格。

6. 发明授权

US07893466B2 Semiconductor FET sensor and method of fabricating the same 有权
标题翻译：半导体FET传感器及其制造方法
公开(公告)号：US07893466B2
公开(公告)日：2011-02-22
申请号：US12195302
申请日：2008-08-20
申请人： Jong Heon Yang , In Bok Baek , Chang Geun Ahn , Chan Woo Park , An Soon Kim , Han Young Yu , Chil Seong Ah , Tae Youb Kim , Myung Sim Jun , Moon Gyu Jang
发明人： Jong Heon Yang , In Bok Baek , Chang Geun Ahn , Chan Woo Park , An Soon Kim , Han Young Yu , Chil Seong Ah , Tae Youb Kim , Myung Sim Jun , Moon Gyu Jang
IPC分类号： G01N27/403
CPC分类号： G01N27/4145 , H01L29/66818 , H01L29/7853
摘要： Provided are a semiconductor Field-Effect Transistor (FET) sensor and a method of fabricating the same. The method includes providing a semiconductor substrate, forming a sensor structure having a fin-shaped structure on the semiconductor substrate, injecting ions for electrical ohmic contact into the sensor structure, and depositing a metal electrode on the sensor structure, immobilizing a sensing material to be specifically combined with a target material onto both sidewall surfaces of the fin-shaped structure, and forming a passage on the sensor structure such that the target material passes through the fin-shaped structure.
摘要翻译：提供了一种半导体场效应晶体管（FET）传感器及其制造方法。该方法包括提供半导体衬底，在半导体衬底上形成具有鳍状结构的传感器结构，将用于电欧姆接触的离子注入到传感器结构中，以及在传感器结构上沉积金属电极，将感测材料固定为特别地将目标材料组合到鳍状结构的两个侧壁表面上，并且在传感器结构上形成通道，使得目标材料通过鳍状结构。

7. 发明申请

US20110017613A1 GAS STORAGE MEDIUM, GAS STORAGE APPARATUS AND METHOD THEREOF 有权
标题翻译：气体储存介质，气体储存装置及其方法
公开(公告)号：US20110017613A1
公开(公告)日：2011-01-27
申请号：US12518084
申请日：2007-12-06
申请人： Han-Young Yu , Ansoon Kim , Jong-Heon Yang , In-Bok Baek , Chang-Geun Ahn , Chil-Seong Ah , Chan-Woo Park , Seongjae Lee , Taehyoung Zyung
发明人： Han-Young Yu , Ansoon Kim , Jong-Heon Yang , In-Bok Baek , Chang-Geun Ahn , Chil-Seong Ah , Chan-Woo Park , Seongjae Lee , Taehyoung Zyung
IPC分类号： B65B3/00 , B32B9/04 , B32B5/00 , B32B15/04 , B01J20/00 , B65B31/00 , B82Y30/00
CPC分类号： F17C11/005 , B01J20/0203 , B01J20/06 , B82Y30/00 , C01B3/001 , C01B3/0021 , C01B3/0031 , C01B3/0057 , C01B3/0078 , C01B3/0084 , Y02E60/325 , Y02E60/327 , Y02E60/328 , Y10S502/526 , Y10S977/762 , Y10S977/811 , Y10T428/12493 , Y10T428/26
摘要： Provided are gas storage medium, a gas storage apparatus having the same and a method thereof. The gas storage medium includes a plurality of material layers each having a variable valence, wherein each of the material layers includes redundant electrons that are not participated in chemical bonding.
摘要翻译：提供了气体存储介质，具有该气体存储介质的气体存储装置及其方法。气体存储介质包括各自具有可变价态的多个材料层，其中每个材料层包括不参与化学键合的冗余电子。

8. 发明申请

US20100283031A1 BIOSENSOR USING NANODOT AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：使用NANODOT的生物传感器及其制造方法
公开(公告)号：US20100283031A1
公开(公告)日：2010-11-11
申请号：US12240133
申请日：2008-09-29
申请人： Tae Youb KIM , Chil Seong Ah , Chang Geun Ahn , Han Young Yu , Jong Heon Yang , Moon Gyu Jang
发明人： Tae Youb KIM , Chil Seong Ah , Chang Geun Ahn , Han Young Yu , Jong Heon Yang , Moon Gyu Jang
IPC分类号： H01L29/775 , H01L21/335
CPC分类号： G01N33/5432 , G01N27/4145 , G01N27/4146 , G01N33/5438 , Y10S977/721 , Y10S977/784 , Y10S977/938
摘要： A biosensor using a nanodot and a method of manufacturing the same are provided. A silicon nanowire can be formed by a CMOS process to reduce manufacturing costs. In addition, an electrically charged nanodot is coupled to a target molecule to be detected, in order to readily change conductivity of the silicon nanowire, thereby making it possible to implement a biosensor capable of providing good sensitivity and being manufactured at a low cost.
摘要翻译：提供了使用纳米点的生物传感器及其制造方法。可以通过CMOS工艺形成硅纳米线，以降低制造成本。此外，为了容易地改变硅纳米线的导电性，带电的纳米点被耦合到待检测的靶分子，从而可以实现能够提供良好的灵敏度并以低成本制造的生物传感器。

9. 发明申请

US20090152598A1 BIOSENSOR USING SILICON NANOWIRE AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：使用硅纳米管的生物传感器及其制造方法
公开(公告)号：US20090152598A1
公开(公告)日：2009-06-18
申请号：US12240114
申请日：2008-09-29
申请人： In Bok BAEK , Jong Heon Yang , Chang Geun Ahn , Han Young Yu , Chil Seong Ah , Chan Woo Park , An Soon Kim , Tae Youb Kim , Moon Gyu Jang , Myung Sim Jun
发明人： In Bok BAEK , Jong Heon Yang , Chang Geun Ahn , Han Young Yu , Chil Seong Ah , Chan Woo Park , An Soon Kim , Tae Youb Kim , Moon Gyu Jang , Myung Sim Jun
IPC分类号： H01L29/00 , H01L21/00
CPC分类号： G01N27/4145 , G01N27/4146
摘要： Provided are a biosensor using a silicon nanowire and a method of manufacturing the same. The silicon nanowire can be formed to have a shape, in which identical patterns are continuously repeated, to enlarge an area in which probe molecules are fixed to the silicon nanowire, thereby increasing detection sensitivity. In addition, the detection sensitivity can be easily adjusted by adjusting a gap between the identical patterns of the silicon nanowire depending on characteristics of target molecules, without adjusting a line width of the silicon nanowire in the conventional art. Further, the gap between the identical patterns of the silicon nanowire can be adjusted depending on characteristics of the target molecule to differentiate detection sensitivities, thereby simultaneously detecting various detection sensitivities.
摘要翻译：提供了使用硅纳米线的生物传感器及其制造方法。可以将硅纳米线形成为具有连续重复相同图案的形状，以扩大探针分子固定在硅纳米线上的面积，从而提高检测灵敏度。此外，通过根据目标分子的特性调整硅纳米线的相同图案之间的间隙，而不调整现有技术中的硅纳米线的线宽，可以容易地调整检测灵敏度。此外，可以根据目标分子的特性来调整硅纳米线的相同图案之间的间隙，以区分检测灵敏度，从而同时检测各种检测灵敏度。

10. 发明申请

US20080254606A1 Method of Manufacturing Semiconductor Device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US20080254606A1
公开(公告)日：2008-10-16
申请号：US12090891
申请日：2006-12-04
申请人： In Bok Baek , Seong Jae Lee , Jong Heon Yang , Chang Geun Ahn , Han Young Yu , Ki Ju Im
发明人： In Bok Baek , Seong Jae Lee , Jong Heon Yang , Chang Geun Ahn , Han Young Yu , Ki Ju Im
IPC分类号： H01L21/28
CPC分类号： H01L29/66439 , B82Y10/00 , H01L21/0273 , H01L21/28123 , H01L29/66484 , H01L29/66545 , H01L29/66575 , H01L29/66772 , H01L29/7613 , H01L29/7831
摘要： Provided is a method of manufacturing a semiconductor device in which properties of photoresist through a lithography process are changed to form a dummy structure, and the structure is applied to a process of forming a gate electrode. The method includes the steps of: forming a buffer layer on the top of a semiconductor substrate; applying an inorganic photoresist on the buffer layer, and forming a photoresist pattern using a lithography process; thermally treating the photoresist pattern using a predetermined gas; uniformly depositing an insulating layer on the thermally treated structure, and etching the deposited layer by the deposited thickness in order to expose the thermally treated photoresist pattern; depositing an insulating layer on the etched structure, and etching the deposited insulating layer to expose the thermally treated photoresist pattern; removing the exposed photoresist pattern using an etching process; forming a gate oxide layer in the portion in which the photoresist pattern is removed; and forming a gate electrode on the gate oxide layer. Accordingly, in forming a structure for manufacturing a nano-sized device, the properties of the layer formed by a lithography process are improved through thermal treatment, and thus the structure used to manufacture various devices can be easily formed.
摘要翻译：提供了通过光刻处理改变光致抗蚀剂的特性以形成虚拟结构的半导体器件的制造方法，并且将该结构应用于形成栅电极的工艺。该方法包括以下步骤：在半导体衬底的顶部上形成缓冲层; 在缓冲层上施加无机光致抗蚀剂，并使用光刻工艺形成光致抗蚀剂图案; 使用预定气体热处理光刻胶图案; 在热处理结构上均匀沉积绝缘层，并通过沉积的厚度蚀刻沉积层，以暴露热处理的光致抗蚀剂图案; 在蚀刻的结构上沉积绝缘层，并蚀刻沉积的绝缘层以暴露热处理的光致抗蚀剂图案; 使用蚀刻工艺去除曝光的光致抗蚀剂图案; 在除去光致抗蚀剂图案的部分中形成栅氧化层; 以及在所述栅极氧化物层上形成栅电极。因此，在形成纳米尺寸器件的制造结构时，通过热处理提高了通过光刻工艺形成的层的性质，因此可以容易地形成用于制造各种器件的结构。

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