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    • 4. 发明授权
    • Biosensor and method of driving the same
    • 生物传感器及其驱动方法
    • US08164123B2
    • 2012-04-24
    • US12703939
    • 2010-02-11
    • Chan Woo ParkChang Geun AhnChil Seong AhTae Youb KimAn Soon KimJong Heon YangGun Yong Sung
    • Chan Woo ParkChang Geun AhnChil Seong AhTae Youb KimAn Soon KimJong Heon YangGun Yong Sung
    • H01L29/78H01L29/772
    • G01N27/4145
    • Provided are a biosensor and a method of driving the same. The biosensor includes a transistor including a substrate including a source, a drain, and a channel formed between the source and the drain, a gate insulating layer formed on the channel, and a source electrode and a drain electrode respectively connected with the source and the drain, a fluid line for covering the transistor to have an inner space together with the transistor and in which a sample solution including target molecules flows, a reference electrode formed on an inner wall of the fluid line, and a probe molecule layer attached on the reference electrode and reacting with the target molecules. Accordingly, the reference electrode is formed on the inner wall of the fluid line, enabling miniaturization of the bio device. Also, the probe molecules are formed on the reference electrode to measure a change in threshold voltage according to a change in electric potential between the reference electrode and the gate insulating layer, such that the sensitivity and reaction rate can be remarkably improved.
    • 提供了一种生物传感器及其驱动方法。 生物传感器包括晶体管,其包括基板,该基板包括源极,漏极和形成在源极和漏极之间的沟道,形成在沟道上的栅极绝缘层以及分别与源极和漏极连接的源极和漏极 漏极,用于覆盖晶体管的流体线,其与晶体管一起具有内部空间,并且其中包含目标分子的样品溶液流动,形成在流体管线的内壁上的参考电极和附着在该流体管线上的探针分子层 参考电极并与靶分子反应。 因此,参考电极形成在流体管线的内壁上,使生物装置能够小型化。 此外,探针分子形成在参考电极上,以根据参考电极和栅极绝缘层之间的电位的变化来测量阈值电压的变化,从而可以显着提高灵敏度和反应速率。
    • 5. 发明授权
    • Silicon-based light emitting diode using side reflecting mirror
    • 硅基发光二极管采用侧面反射镜
    • US07982231B2
    • 2011-07-19
    • US12096751
    • 2006-04-25
    • Tae-Youb KimNae-Man ParkGun-Yong SungJong-Heon Yang
    • Tae-Youb KimNae-Man ParkGun-Yong SungJong-Heon Yang
    • H01L33/00
    • H01L33/20H01L33/06H01L33/10H01L33/18H01L33/34H01L33/60
    • A silicon light emitting diode capable of effectively utilizing light radiated toward the lateral side of a substrate by including a side reflecting mirror is provided. The silicon-based light emitting diode includes a p-type silicon substrate having a plurality of grooves, a light emitting diode layer formed on each of the grooves of the silicon substrate, the light emitting diode layer including an active layer, an n-type doped layer, and a transparent electrode layer, and a metal electrode including a lower metal electrode formed on the bottom surface of the p-type silicon substrate and an upper metal electrode formed on the top surface of the transparent electrode layer. The lateral surface of each of the grooves is separated from the light emitting diode layer and used as a reflecting mirror. The lateral surface is referred to as the side reflecting mirror.
    • 提供能够有效地利用通过包括侧反射镜朝向衬底的侧面辐射的光的硅发光二极管。 硅基发光二极管包括具有多个沟槽的p型硅衬底,形成在硅衬底的每个沟槽上的发光二极管层,发光二极管层包括有源层,n型 掺杂层和透明电极层,以及包含形成在p型硅衬底的底表面上的下金属电极的金属电极和形成在透明电极层的顶表面上的上金属电极。 每个凹槽的侧表面与发光二极管层分离并用作反射镜。 侧面被称为侧面反射镜。
    • 10. 发明授权
    • Silicon based light emitting diode
    • 硅基发光二极管
    • US07671377B2
    • 2010-03-02
    • US11720987
    • 2005-11-14
    • Tae-Youb KimNae-Man ParkKyung-Hyun KimGun-Yong Sung
    • Tae-Youb KimNae-Man ParkKyung-Hyun KimGun-Yong Sung
    • H01L33/00H01L29/06
    • H01L33/465H01L33/34H01L33/38
    • Provided is a highly efficient silicon-based light emitting diode (LED) including a Distributed Bragg Reflector (DBR), an n-type doping layer, and a p-type substrate structure. The silicon-based LED includes: a substrate having a p-type mesa substrate structure; an active layer that is formed on the substrate and has a first surface and a second surface opposite the first surface; a first reflective layer facing the first surface of the active layer; a second reflective layer that is located on either side of the p-type substrate structure and faces the second surface of the active layer; an n-type doping layer sandwiched between the active layer and the first reflective layer; a first electrode electrically connected to the n-type doping layer; and a second electrode electrically connected to the p-type substrate structure.
    • 提供了包括分布式布拉格反射器(DBR),n型掺杂层和p型衬底结构的高效硅基发光二极管(LED)。 硅基LED包括:具有p型台面基板结构的基板; 活性层,其形成在所述基材上并具有与所述第一表面相对的第一表面和第二表面; 面向有源层的第一表面的第一反射层; 第二反射层,其位于p型衬底结构的任一侧并面向有源层的第二表面; 夹在有源层和第一反射层之间的n型掺杂层; 电连接到所述n型掺杂层的第一电极; 以及与p型基板结构电连接的第二电极。