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1. 发明授权

US07964035B2 Crystallization apparatus and crystallization method 失效
标题翻译：结晶装置和结晶方法
公开(公告)号：US07964035B2
公开(公告)日：2011-06-21
申请号：US11925389
申请日：2007-10-26
申请人： Noritaka Akita , Yoshio Takami
发明人： Noritaka Akita , Yoshio Takami
IPC分类号： C30B11/14
CPC分类号： B23K26/067 , B23K26/0613 , H01L21/02675 , Y10T117/1004 , Y10T117/1008
摘要： A crystallization apparatus is provided. The crystallization apparatus includes a visible light source capable of obtaining high energy density output therein. A visible light irradiation system is formed by a plurality of visible laser beam sources arranged in a two-dimensional array. The visible light irradiation system includes a light intensity distribution forming apparatus for patterning light intensity distribution of a plurality of visible laser beams emitted by each visible laser beam source, and an imaging optical system for imaging the light having the light intensity distribution patterned by the light intensity distribution forming apparatus onto an irradiated region on the processed substrate. The visible laser beams emitted by a plurality of solid lasers or semiconductor lasers are overlapped in the light intensity distribution forming apparatus that satisfies an imaging position relationship in an optical axis with respect to the processed substrate.
摘要翻译：提供结晶装置。结晶装置包括能够在其中获得高能量密度输出的可见光源。可见光照射系统由以二维阵列排列的多个可见激光束源形成。可见光照射系统包括：光强分布形成装置，用于对由每个可见激光束源发射的多个可见激光束的光强度分布进行图案;以及成像光学系统，用于对具有由光图案化的光强度分布的光进行成像强度分布形成装置到被处理基板上的照射区域上。由多个固体激光器或半导体激光器发射的可见激光束在满足关于处理后的基板的光轴的成像位置关系的光强分布形成装置中重叠。

2. 发明授权

US07847214B2 Laser crystallization apparatus and crystallization method 失效
标题翻译：激光结晶装置及结晶方法
公开(公告)号：US07847214B2
公开(公告)日：2010-12-07
申请号：US11567383
申请日：2006-12-06
申请人： Yoshio Takami , Tatsuhiro Taguchi
发明人： Yoshio Takami , Tatsuhiro Taguchi
IPC分类号： B23K26/00
CPC分类号： B23K26/04 , B23K26/043 , B23K26/0608 , B23K26/0622 , B23K26/0676 , H01L21/02686 , H01L21/2026
摘要： A laser crystallization apparatus and a crystallization method with a high throughput are provided. Laser light having a predetermined light intensity distribution is irradiated to a semiconductor film to melt and crystallize, wherein a irradiation position is placed very quickly and with a high positional accuracy, thereby forming the semiconductor film having a large crystal grain size. A laser crystallization apparatus according to one aspect of the present invention comprises a crystallizing laser light source, a phase shifter modulating pulse laser light to have the predetermined light intensity distribution, an excimer imaging optical system, a substrate holding stage mounting a processing substrate and continuously moving in the predetermined direction, a position measuring means, and a signal generating means indicating generation of the pulse laser light based on the position measurement of the stage by the position measuring means.
摘要翻译：提供了具有高通量的激光结晶装置和结晶方法。将具有预定的光强度分布的激光照射到半导体膜上以熔化和结晶，其中照射位置被非常快地并且以高位置精度放置，从而形成具有大晶粒尺寸的半导体膜。根据本发明的一个方面的激光结晶装置包括结晶激光光源，具有预定光强度分布的移相器调制脉冲激光，准分子成像光学系统，安装处理基板的基板保持台并连续地位置测量装置和指示通过位置测量装置基于舞台的位置测量产生脉冲激光的信号产生装置。

3. 发明授权

US07369215B2 Laser crystallization apparatus 失效
标题翻译：激光结晶装置
公开(公告)号：US07369215B2
公开(公告)日：2008-05-06
申请号：US11193432
申请日：2005-08-01
申请人： Yoshio Takami
发明人： Yoshio Takami
IPC分类号： G03B27/54
CPC分类号： G03F7/70891
摘要： A laser crystallization apparatus has a light source, a phase shifter which modulates a laser light from the light source, an illumination system which is provided between the light source and the phase shifter, homogenizes a light intensity of the laser light from the light source and illuminates the phase shifter with the homogenized light, a stage which supports a non-single-crystal semiconductor, an image formation optical system having a plurality of optical members which is provided between the semiconductor on the stage and the phase shifter and forms an image of the modulated laser beam at a desired part on the semiconductor, and a temperature adjustment portion which adjusts a temperature of the optical member by heating or cooling the optical members of the image formation optical system.
摘要翻译：激光结晶装置具有光源，调制来自光源的激光的移相器，设置在光源和移相器之间的照明系统，使来自光源的激光的光强度均匀化，用均匀的光照亮移相器，支持非单晶半导体的平台，具有多个光学构件的成像光学系统，该多个光学构件设置在载台上的半导体与移相器之间并形成调制激光束在半导体上的期望部分，以及温度调节部分，其通过加热或冷却成像光学系统的光学部件来调节光学部件的温度。

4. 发明申请

US20080083928A1 CRYSTALLIZATION APPARATUS AND METHOD, MANUFACTURING METHOD OF ELECTRONIC DEVICE, ELECTRONIC DEVICE, AND OPTICAL MODULATION ELEMENT 审中-公开
标题翻译：电子设备，电子设备和光学调制元件的结晶设备和方法，制造方法
公开(公告)号：US20080083928A1
公开(公告)日：2008-04-10
申请号：US11943913
申请日：2007-11-21
申请人： Noritaka Akita , Yoshio Takami
发明人： Noritaka Akita , Yoshio Takami
IPC分类号： H01L29/04 , H01L21/42
CPC分类号： B23K26/0861 , B23K26/04 , B23K26/066 , B23K2101/40 , H01L21/02422 , H01L21/02532 , H01L21/0268 , H01L21/02686 , Y10S117/90 , Y10T117/10 , Y10T117/1008
摘要： A manufacturing method of an electronic device includes positioning a processed substrate with respect to a substrate stage of a crystallization apparatus and supporting it with at least one positioning mark previously provided on the processed substrate being used as a references, applying a modulated light beam to a predetermined area of the processed substrate supported by the substrate stage and crystallizing the area, and forming at least one circuit element in the crystallized area of the processed substrate subjected to positioning with the positioning mark being used as a reference.
摘要翻译：电子设备的制造方法包括：将处理过的基板相对于结晶装置的基板台定位，并将预先设置在已处理基板上的至少一个定位标记作为基准来对其进行支撑，将经调制的光束施加到处理基板的预定区域由基板台支撑并使该区域结晶，并且在经过定位的处理基板的结晶区域中形成至少一个电路元件作为基准。

5. 发明申请

US20080073573A1 LASER CRYSTALLIZATION APPARATUS AND CRYSTALLIZATION METHOD 失效
标题翻译：激光结晶装置和结晶方法
公开(公告)号：US20080073573A1
公开(公告)日：2008-03-27
申请号：US11567383
申请日：2006-12-06
申请人： Yoshio Takami , Tatsuhiro Taguchi
发明人： Yoshio Takami , Tatsuhiro Taguchi
IPC分类号： A61N5/00
CPC分类号： B23K26/04 , B23K26/043 , B23K26/0608 , B23K26/0622 , B23K26/0676 , H01L21/02686 , H01L21/2026
摘要： A laser crystallization apparatus and a crystallization method with a high throughput are provided. Laser light having a predetermined light intensity distribution is irradiated to a semiconductor film to melt and crystallize, wherein a irradiation position is placed very quickly and with a high positional accuracy, thereby forming the semiconductor film having a large crystal grain size. A laser crystallization apparatus according to one aspect of the present invention comprises a crystallizing laser light source, a phase shifter modulating pulse laser light to have the predetermined light intensity distribution, an excimer imaging optical system, a substrate holding stage mounting a processing substrate and continuously moving in the predetermined direction, a position measuring means, and a signal generating means indicating generation of the pulse laser light based on the position measurement of the stage by the position measuring means.
摘要翻译：提供了具有高通量的激光结晶装置和结晶方法。将具有预定的光强度分布的激光照射到半导体膜上以熔化和结晶，其中照射位置被非常快地并且以高位置精度放置，从而形成具有大晶粒尺寸的半导体膜。根据本发明的一个方面的激光结晶装置包括结晶激光光源，具有预定光强度分布的移相器调制脉冲激光，准分子成像光学系统，安装处理基板的基板保持台并连续地位置测量装置和指示通过位置测量装置基于舞台的位置测量产生脉冲激光的信号产生装置。

6. 发明授权

US07232982B2 Crystallization apparatus, crystallization method, method of manufacturing thin film transistor, thin film transistor, and display apparatus 失效
标题翻译：结晶装置，结晶方法，制造薄膜晶体管的方法，薄膜晶体管和显示装置
公开(公告)号：US07232982B2
公开(公告)日：2007-06-19
申请号：US10861473
申请日：2004-06-07
申请人： Yoshio Takami
发明人： Yoshio Takami
IPC分类号： H01L27/00
CPC分类号： H01L21/02686 , B23K26/03 , B23K26/032 , H01L21/2026 , H01L27/1285 , H01L29/66757 , H01L29/78675 , H01L29/78678
摘要： A laser crystallization apparatus and method for crystallizing a semiconductor thin film while monitoring at a high spatial and temporal resolution in real time. In a laser crystallization apparatus comprising a crystallizing optical system which irradiates a semiconductor thin film with a pulse laser light having an intensity distribution to melt and to crystallize the thin film in a manner to grow grains laterally, the apparatus comprises an illumination light source provided out of an optical path of the laser, an illumination optical system including annular optical elements which provides the optical path of the laser light in a central portion and guides the illumination light to the thin film, and an observing optical system which magnifies the illumination light transmitted through the thin film, picks up an image of the grains growing laterally, and displays the image.
摘要翻译：激光结晶装置和方法，用于在以高空间和时间分辨率实时监测的同时结晶半导体薄膜。一种激光结晶装置，其特征在于，包括：结晶化光学系统，其用具有强度分布的脉冲激光照射半导体薄膜，使其熔融，并使薄膜以横向晶粒结晶，所述装置包括：照明光源，的激光光路的照明光学系统，包括将激光的光路提供在中心部分并将照明光引导到薄膜的环形光学元件的照明光学系统以及将透射的照明光放大的观察光学系统通过薄膜，拾取横向生长的谷物的图像，并显示图像。

7. 发明申请

US20060028633A1 Laser crystallization apparatus 失效
标题翻译：激光结晶装置
公开(公告)号：US20060028633A1
公开(公告)日：2006-02-09
申请号：US11193432
申请日：2005-08-01
申请人： Yoshio Takami
发明人： Yoshio Takami
IPC分类号： G03B27/54
CPC分类号： G03F7/70891
摘要： A laser crystallization apparatus has a light source, a phase shifter which modulates a laser light from the light source, an illumination system which is provided between the light source and the phase shifter, homogenizes a light intensity of the laser light from the light source and illuminates the phase shifter with the homogenized light, a stage which supports a non-single-crystal semiconductor, an image formation optical system having a plurality of optical members which is provided between the semiconductor on the stage and the phase shifter and forms an image of the modulated laser beam at a desired part on the semiconductor, and a temperature adjustment portion which adjusts a temperature of the optical member by heating or cooling the optical members of the image formation optical system.
摘要翻译：激光结晶装置具有光源，调制来自光源的激光的移相器，设置在光源和移相器之间的照明系统，使来自光源的激光的光强度均匀化，用均匀的光照亮移相器，支持非单晶半导体的平台，具有多个光学构件的成像光学系统，该多个光学构件设置在载台上的半导体与移相器之间并形成调制激光束在半导体上的期望部分，以及温度调节部分，其通过加热或冷却成像光学系统的光学部件来调节光学部件的温度。

8. 发明申请

US20060019503A1 Laser crystallization apparatus and laser crystallization method 失效
标题翻译：激光结晶装置和激光结晶法
公开(公告)号：US20060019503A1
公开(公告)日：2006-01-26
申请号：US11104629
申请日：2005-04-13
申请人： Yoshio Takami
发明人： Yoshio Takami
IPC分类号： H01L21/00
CPC分类号： H01L21/268 , B23K26/04 , B23K26/043
摘要： A laser crystallization apparatus which capable of correcting both shift in imaging position caused by thermal lens effect of the imaging optical system and shift due to flatness of the substrate comprises an crystallization optical system which irradiates laser light to a thin film disposed on the substrate to melt and crystallize an irradiated region of the thin film, the apparatus comprises a measurement light source which is disposed outside a light path of the laser light, and which emits measurement light being illuminated the irradiated region of the thin film, and a substrate height correction system which illuminates the thin film with the measurement light through an imaging optical system in the crystallization optical system, and which detects the reflected measurement light from the thin film.
摘要翻译：能够校正由成像光学系统的热透镜效应引起的成像位置的偏移和由于基板的平坦度而发生偏移的激光结晶装置包括：将激光照射到设置在基板上的薄膜以熔化的结晶光学系统并且使所述薄膜的照射区域结晶化，所述装置包括测量光源，所述测量光源设置在所述激光的光路外侧，并且发射照射所述薄膜的照射区域的测量光;以及基板高度校正系统其通过结晶光学系统中的成像光学系统利用测量光照射薄膜，并且检测来自薄膜的反射测量光。

9. 发明申请

US20090017642A1 LASER CRYSTALLIZATION APPARATUS AND LASER CRYSTALLIZATION METHOD 审中-公开
标题翻译：激光结晶装置和激光结晶方法
公开(公告)号：US20090017642A1
公开(公告)日：2009-01-15
申请号：US12209684
申请日：2008-09-12
申请人： Yoshio TAKAMI
发明人： Yoshio TAKAMI
IPC分类号： H01L21/00
CPC分类号： H01L21/268 , B23K26/04 , B23K26/043
摘要： A laser crystallization apparatus which capable of correcting both shift in imaging position caused by thermal lens effect of the imaging optical system and shift due to flatness of the substrate comprises an crystallization optical system which irradiates laser light to a thin film disposed on the substrate to melt and crystallize an irradiated region of the thin film, the apparatus comprises a measurement light source which is disposed outside a light path of the laser light, and which emits measurement light being illuminated the irradiated region of the thin film, and a substrate height correction system which illuminates the thin film with the measurement light through an imaging optical system in the crystallization optical system, and which detects the reflected measurement light from the thin film.
摘要翻译：能够校正由成像光学系统的热透镜效应引起的成像位置的偏移和由于基板的平坦度而发生偏移的激光结晶装置包括：将激光照射到设置在基板上的薄膜以熔化的结晶光学系统并且使所述薄膜的照射区域结晶化，所述装置包括测量光源，所述测量光源设置在所述激光的光路外侧，并且发射照射所述薄膜的照射区域的测量光;以及基板高度校正系统其通过结晶光学系统中的成像光学系统利用测量光照射薄膜，并且检测来自薄膜的反射测量光。

10. 发明授权

US07345746B2 Method of and apparatus for in-situ monitoring of crystallization state 失效
标题翻译：用于现场监测结晶态的方法和装置
公开(公告)号：US07345746B2
公开(公告)日：2008-03-18
申请号：US11515023
申请日：2006-09-01
申请人： Yoshio Takami
发明人： Yoshio Takami
IPC分类号： G01N21/00
CPC分类号： H01L21/02686 , C30B13/28 , G01N21/8422 , G01N2021/8477 , H01L21/2026 , H01L21/67115 , H01L21/67253 , H01L22/26 , H01L2924/0002 , H01L2924/00
摘要： In-situ monitoring of a crystallization state is used for laser anneal processing for applying an energy line irradiation for at least one of crystallization of a thin film and promotion of the crystallization. A method is characterized by simultaneously irradiating at least a plurality of monitoring places in a region having a predetermined area of at least one of the surface and the underside of the thin film by a monitor light for monitoring a crystallization state of the thin film at least during or after of before, during and after the energy line irradiation directly or through a substrate, and measuring a temporal change of the intensity of at least one of a reflected light and a transmitted light, from the surface or the underside of the thin film, of the monitor light as a light intensity distribution related to the positions of the monitoring places. Apparatus according to the invention perform such methods.
摘要翻译：结晶状态的原位监测用于激光退火处理，用于施加能量线照射用于薄膜结晶中的至少一种并促进结晶。一种方法的特征在于，通过监测光同时照射具有至少一个薄膜的表面和底面的预定面积的区域中的至少多个监测位置，用于至少监测薄膜的结晶状态在直接或通过基板的能量线照射之前，之后和之后的过程中或之后，从薄膜的表面或底面测量反射光和透射光中的至少一个的强度的时间变化作为与监视位置的位置相关的光强度分布的监视光。根据本发明的装置执行这种方法。

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