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    • 8. 发明授权
    • Wavelength tunable filter and wavelength tunable laser module
    • 波长可调滤波器和波长可调激光模块
    • US08179931B2
    • 2012-05-15
    • US12622785
    • 2009-11-20
    • Hideo ArimotoMasahiro Aoki
    • Hideo ArimotoMasahiro Aoki
    • H01S3/10
    • G02F1/3133H01S5/06256H01S5/1032H01S5/1035
    • A wavelength tunable filter and a wavelength tunable laser module are a codirectional coupler type whose characteristics do not vary significantly with a process error. They are structured so as to include a semiconductor substrate which has a first optical waveguide and a second optical waveguide. The first and the second optical waveguides are extended from a first side of the semiconductor substrate to an opposing second side thereof. The first optical waveguide includes a first core layer, which has a planar layout having periodic convexes and concaves, and a pair of electrodes, which vertically sandwich the first core layer. The second optical waveguide includes a second core layer, which has a lower refractive index than the first core layer. Further, a layer having the same composition and film thickness as the second core layer is placed under the first core layer.
    • 波长可调滤波器和波长可调激光器模块是一种同向耦合器类型,其特性与处理误差不会显着变化。 它们被构造成包括具有第一光波导和第二光波导的半导体衬底。 第一和第二光波导从半导体衬底的第一侧延伸到相对的第二侧。 第一光波导包括具有周期性凸起和凹陷的平面布局的第一芯层和垂直夹着第一芯层的一对电极。 第二光波导包括具有比第一芯层低的折射率的第二芯层。 此外,具有与第二芯层相同的组成和膜厚度的层被放置在第一芯层下方。
    • 9. 发明申请
    • Semiconductor laser apparatus
    • 半导体激光装置
    • US20090268772A1
    • 2009-10-29
    • US12385735
    • 2009-04-17
    • Hideo ArimotoMasahiro Aoki
    • Hideo ArimotoMasahiro Aoki
    • H01S5/026H01S3/08
    • H01S5/141H01S5/02248H01S5/02284H01S5/0267H01S5/1082H01S5/1085H01S5/18H01S5/227H01S5/4087
    • A wavelength variable laser smaller in size than the conventional one can be achieved by arranging a gain chip, an etalon filter and a fifth reflective mirror on an AlN submount and longitudinally integrating the gain chip in which a 45° mirror and a lens are integrated and the etalon filter. A laser cavity has a structure in which light passes through an active layer from a first reflective mirror realized by an end surface of the gain chip, is reflected by the 45° mirror at an angle of 90° and then passes through the lens. The light having passed through the lens is converted into parallel light, passes through the etalon filter and reaches the fifth reflective mirror and is then reflected. The reflected light returns through the same optical path and reaches the first reflective mirror realized by the end surface of the gain chip.
    • 可以通过在AlN基座上布置增益芯片,标准具滤波器和第五反射镜并纵向积分其中集成45°反射镜和透镜的增益芯片来实现尺寸比常规小的波长可变激光器, 标准具过滤器。 激光腔具有光从通过增益芯片的端面实现的第一反射镜穿过有源层的结构,被45°反射镜以90°的角度反射,然后通过透镜。 通过透镜的光被转换为平行光,通过标准具过滤器并到达第五反射镜,然后被反射。 反射光通过相同的光路返回并到达由增益芯片的端面实现的第一反射镜。