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1. 发明授权

US09110315B2 Optical device, modulator module, and method for manufacturing the optical device 有权
标题翻译：光学器件，调制器模块以及用于制造光学器件的方法
公开(公告)号：US09110315B2
公开(公告)日：2015-08-18
申请号：US13488511
申请日：2012-06-05
申请人： Akira Nakanishi , Hideo Arimoto , Hiroaki Hayashi , Shigeki Makino , Kazunori Shinoda
发明人： Akira Nakanishi , Hideo Arimoto , Hiroaki Hayashi , Shigeki Makino , Kazunori Shinoda
IPC分类号： G02B6/12 , G02F1/025 , H01S5/026 , G02F1/225 , H01S5/12 , H01S5/227
CPC分类号： G02F1/025 , G02B2006/12097 , G02B2006/12135 , G02B2006/12142 , G02F1/2257 , G02F2201/063 , G02F2201/50 , H01S5/0265 , H01S5/12 , H01S5/227
摘要： An optical device includes a ridge-like optical waveguide portion, a mesa protector portion that is arranged in parallel to the optical waveguide portion, a resin portion that covers upper parts of the mesa protector portion and is disposed at both sides of the mesa protector portion, an electrode that is disposed on the optical waveguide portion, an electrode pad that is disposed on the resin portion located at an opposite side to the optical waveguide portion with respect to the mesa protector portion, and a connection portion that is disposed on the resin portion and electrically connects the electrode to the electrode pad.
摘要翻译：光学装置包括脊状光波导部分，平行于光波导部分的台面保护部分，覆盖台面保护部分的上部并设置在台面保护部分两侧的树脂部分设置在所述光波导路部分上的电极，设置在与所述台面保护器部分相对的所述光波导部分相对侧的所述树脂部分上的电极焊盘和设置在所述树脂上的连接部分并将电极电连接到电极焊盘。

2. 发明授权

US08774571B2 Optical device, optical module, and method for manufacturing optical device 有权
标题翻译：光学装置，光学模块以及光学装置的制造方法
公开(公告)号：US08774571B2
公开(公告)日：2014-07-08
申请号：US13590718
申请日：2012-08-21
申请人： Kazunori Shinoda , Shigeki Makino , Hideo Arimoto
发明人： Kazunori Shinoda , Shigeki Makino , Hideo Arimoto
IPC分类号： G02B6/12
CPC分类号： G02F1/13471 , H01S5/0085 , H01S5/02216 , H01S5/02284 , H01S5/0265 , H01S5/06256 , H01S5/1209
摘要： An optical device includes a substrate and a first optical waveguide including a mesa. The mesa includes a first lower clad layer portion, a first core layer portion, and a first upper clad layer portion. The first lower clad layer portion, the first core layer portion, and the first upper clad layer portion are disposed in this order from the substrate side. The optical device also includes a first etch stop layer configured to stop etching when the first optical waveguide is formed. The first etch stop layer being laminated over the substrate. The first optical waveguide is laminated on the first etch stop layer.
摘要翻译：光学装置包括基板和包括台面的第一光波导。台面包括第一下包层部分，第一芯层部分和第一上包层部分。第一下包层部分，第一芯层部分和第一上包层部分从衬底侧依次设置。该光学器件还包括第一蚀刻停止层，其被配置为在形成第一光波导时停止蚀刻。第一蚀刻停止层层压在衬底上。第一光波导层压在第一蚀刻停止层上。

3. 发明授权

US07502403B2 Semiconductor laser and optical module 有权
标题翻译：半导体激光和光学模块
公开(公告)号：US07502403B2
公开(公告)日：2009-03-10
申请号：US11831986
申请日：2007-08-01
申请人： Kazunori Shinoda , Koichiro Adachi , Hideo Arimoto
发明人： Kazunori Shinoda , Koichiro Adachi , Hideo Arimoto
IPC分类号： H01S3/08 , H01S5/00
CPC分类号： G02B6/4246 , B82Y20/00 , G02B6/4214 , H01S5/005 , H01S5/02212 , H01S5/02248 , H01S5/02284 , H01S5/026 , H01S5/0267 , H01S5/028 , H01S5/1085 , H01S5/12 , H01S5/18 , H01S5/2224 , H01S5/2275 , H01S5/34306
摘要： In a horizontal cavity surface emitted laser, there is provided a device structure that is capable of obtaining a circular narrow-divergence emitted beam that is high in the optical coupling efficiency with a fiber. As a first means, there is provided a horizontal cavity surface emitting laser having a structure in which the plane mirror that is inclined by 45° and the bottom lens of the oval configuration are integrally structured. As a second means, there is provided a horizontal cavity surface emitting laser in which the mirror having the columnar front surface configuration inclined by 45° and the bottom lens of the columnar front surface configuration are integrally structured. Since the horizontal component and the vertical component of the laser beam can be shaped, independently, through the above means. As a result, it is possible to obtain the circular narrow-divergence emitted beam.
摘要翻译：在水平腔表面发射激光器中，提供了一种能够获得与光纤的光耦合效率高的圆形窄发散射束的器件结构。作为第一手段，提供了一种水平腔表面发射激光器，其具有倾斜45°的平面镜和椭圆形的底部透镜一体构造的结构。作为第二装置，提供了一种水平腔表面发射激光器，其中具有倾斜45°的柱状前表面结构的反射镜和柱状前表面构造的底部透镜是一体构造的。由于可以通过上述方式独立地对激光束的水平分量和垂直分量进行成形。结果，可以获得圆形窄发散光束。

4. 发明申请

US20080219315A1 Semiconductor Optical Device and Manufacturing Method Thereof 有权
标题翻译：半导体光学器件及其制造方法
公开(公告)号：US20080219315A1
公开(公告)日：2008-09-11
申请号：US11838256
申请日：2007-08-14
申请人： SHIGEKI MAKINO , Kazunori Shinoda , Takeshi Kitatani
发明人： SHIGEKI MAKINO , Kazunori Shinoda , Takeshi Kitatani
IPC分类号： H01S5/00 , G02B6/10 , H01L21/00
CPC分类号： H01S5/0265 , B82Y20/00 , H01L2224/48091 , H01S5/02276 , H01S5/02284 , H01S5/026 , H01S5/0425 , H01S5/06256 , H01S5/101 , H01S5/12 , H01S5/227 , H01S5/34306 , H01L2924/00014
摘要： A low reflective window structure in an existent electro-absorption optical modulator involves a trading off problem between the increase in the parasitic capacitance and the pile-up. This is because the capacitance density of the pn junction in the window structure is higher compared with the pin junction as the optical absorption region, and the application of electric field to the optical absorption region becomes insufficient in a case of receding the electrode structure from the junction between the optical absorption region and the window structure making it difficult to discharge photo-carriers generated in the optical absorption region. An undope waveguide structure comprising a structure having such compositional wavelength and a film thickness that the compositional wavelength for each of multi-layers constituting the waveguide structure is sufficiently shorter than that of the signal light and the average refractive index is about identical with that in the optical absorption region may be disposed. In a case of forming the electrode structure so as to overlap the junction boundary between the optical absorption region and the undope waveguide, and do not extend on the joined boundary between the undope waveguide and the window structure, increase in the parasitic capacitance due to the pn junction of the window structure and pile up can be suppressed simultaneously.
摘要翻译：存在的电吸收光调制器中的低反射窗结构涉及寄生电容增加和堆积之间的折衷问题。这是因为窗口结构中的pn结的电容密度与作为光吸收区的pin结相比较高，并且在电极结构从光吸收区退出的情况下，对光吸收区的电场的施加变得不足光吸收区域和窗口结构之间的结，使得难以放电在光吸收区域中产生的光载流子。包括具有这种组成波长和膜厚的结构的未掺杂波导结构，构成波导结构的多层的组成波长比信号光的平均折射率充分短，并且平均折射率大致相同可以设置光吸收区域。在形成电极结构以与光吸收区域和未反射波导之间的接合边界重叠的情况下，并且不延伸在未波导波导和窗口结构之间的接合边界上时，寄生电容由于 pn结的窗结构和堆积可以同时抑制。

5. 发明申请

US20080266638A1 SEMICONDUCTOR LASER AND OPTICAL MODULE 有权
标题翻译：半导体激光和光学模块
公开(公告)号：US20080266638A1
公开(公告)日：2008-10-30
申请号：US11831986
申请日：2007-08-01
申请人： Kazunori Shinoda , Koichiro Adachi , Hideo Arimoto
发明人： Kazunori Shinoda , Koichiro Adachi , Hideo Arimoto
IPC分类号： G02B26/00 , H01S5/02
CPC分类号： G02B6/4246 , B82Y20/00 , G02B6/4214 , H01S5/005 , H01S5/02212 , H01S5/02248 , H01S5/02284 , H01S5/026 , H01S5/0267 , H01S5/028 , H01S5/1085 , H01S5/12 , H01S5/18 , H01S5/2224 , H01S5/2275 , H01S5/34306
摘要： In a horizontal cavity surface emitted laser, there is provided a device structure that is capable of obtaining a circular narrow-divergence emitted beam that is high in the optical coupling efficiency with a fiber. As a first means, there is provided a horizontal cavity surface emitting laser having a structure in which the plane mirror that is inclined by 45° and the bottom lens of the oval configuration are integrally structured. As a second means, there is provided a horizontal cavity surface emitting laser in which the mirror having the columnar front surface configuration inclined by 45° and the bottom lens of the columnar front surface configuration are integrally structured. Since the horizontal component and the vertical component of the laser beam can be shaped, independently, through the above means. As a result, it is possible to obtain the circular narrow-divergence emitted beam.
摘要翻译：在水平腔表面发射激光器中，提供了一种能够获得与光纤的光耦合效率高的圆形窄发散射束的器件结构。作为第一手段，提供了一种水平腔表面发射激光器，其具有倾斜45°的平面镜和椭圆形的底部透镜一体构造的结构。作为第二装置，提供了一种水平腔表面发射激光器，其中具有倾斜45°的柱状前表面结构的反射镜和柱状前表面构造的底部透镜是一体构造的。由于可以通过上述方式独立地对激光束的水平分量和垂直分量进行成形。结果，可以获得圆形窄发散光束。

6. 发明授权

US07577319B2 Semiconductor optical device and manufacturing method thereof 有权
标题翻译：半导体光学器件及其制造方法
公开(公告)号：US07577319B2
公开(公告)日：2009-08-18
申请号：US11838256
申请日：2007-08-14
申请人： Shigeki Makino , Kazunori Shinoda , Takeshi Kitatani
发明人： Shigeki Makino , Kazunori Shinoda , Takeshi Kitatani
IPC分类号： G02F1/035 , H01L21/00
CPC分类号： H01S5/0265 , B82Y20/00 , H01L2224/48091 , H01S5/02276 , H01S5/02284 , H01S5/026 , H01S5/0425 , H01S5/06256 , H01S5/101 , H01S5/12 , H01S5/227 , H01S5/34306 , H01L2924/00014
摘要： A low reflective window structure in an existent electro-absorption optical modulator involves a trading off problem between the increase in the parasitic capacitance and the pile-up. This is because the capacitance density of the pn junction in the window structure is higher compared with the pin junction as the optical absorption region, and the application of electric field to the optical absorption region becomes insufficient in a case of receding the electrode structure from the junction between the optical absorption region and the window structure making it difficult to discharge photo-carriers generated in the optical absorption region. An undope waveguide structure comprising a structure having such compositional wavelength and a film thickness that the compositional wavelength for each of multi-layers constituting the waveguide structure is sufficiently shorter than that of the signal light and the average refractive index is about identical with that in the optical absorption region may be disposed. In a case of forming the electrode structure so as to overlap the junction boundary between the optical absorption region and the undope waveguide, and do not extend on the joined boundary between the undope waveguide and the window structure, increase in the parasitic capacitance due to the pn junction of the window structure and pile up can be suppressed simultaneously.
摘要翻译：存在的电吸收光调制器中的低反射窗结构涉及寄生电容增加和堆积之间的折衷问题。这是因为窗口结构中的pn结的电容密度与作为光吸收区的pin结相比较高，并且在电极结构从光吸收区退出的情况下，对光吸收区的电场的施加变得不足光吸收区域和窗口结构之间的结，使得难以放电在光吸收区域中产生的光载流子。包括具有这种组成波长和膜厚的结构的未掺杂波导结构，构成波导结构的多层的组成波长比信号光的平均折射率充分短，并且平均折射率大致相同可以设置光吸收区域。在形成电极结构以与光吸收区域和未反射波导之间的接合边界重叠的情况下，并且不延伸在未波导波导和窗口结构之间的接合边界上时，寄生电容由于 pn结的窗结构和堆积可以同时抑制。

7. 发明申请

US20080317422A1 OPTICAL INTEGRATED DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：光学集成装置及其制造方法
公开(公告)号：US20080317422A1
公开(公告)日：2008-12-25
申请号：US11843682
申请日：2007-08-23
申请人： TAKESHI KITATANI , Kazunori Shinoda , Takashi Shiota , Shigeki Makino , Toshihiko Fukamachi
发明人： TAKESHI KITATANI , Kazunori Shinoda , Takashi Shiota , Shigeki Makino , Toshihiko Fukamachi
IPC分类号： G02B6/10 , H01L21/02
CPC分类号： G02B6/136 , G02B2006/12078 , G02B2006/12097 , G02B2006/12121 , G02B2006/12128 , G02B2006/12142
摘要： In the optical integrated devices with ridge waveguide structure based on the conventional technology, there occur such troubles as generation of a recess in a BJ section to easily cause a crystal defect due to the mass transport phenomenon of InP when a butt joint (BJ) is grown, lowering of reliability of the devices, and lowering in a yield in fabrication of devices. In the present invention, a protection layer made of InGaAsP is provided on the BJ section. The layer has high etching selectivity for the InP cladding layer and remains on the BJ section even after mesa etching.
摘要翻译：在基于传统技术的具有脊波导结构的光学集成装置中，当对接部（BJ）为对接接头（BJ）时，发生BJ部分中的凹部的产生容易引起由于InP的质量传递现象引起的晶体缺陷的问题增长，降低了器件的可靠性，并降低了器件制造的成品率。在本发明中，在BJ部分上设置由InGaAsP制成的保护层。该层对于InP包层具有高蚀刻选择性，并且即使在台面蚀刻之后也保留在BJ部分上。

8. 发明授权

US07711229B2 Optical integrated device and manufacturing method thereof 有权
标题翻译：光集成器件及其制造方法
公开(公告)号：US07711229B2
公开(公告)日：2010-05-04
申请号：US11843682
申请日：2007-08-23
申请人： Takeshi Kitatani , Kazunori Shinoda , Takashi Shiota , Shigeki Makino , Toshihiko Fukamachi
发明人： Takeshi Kitatani , Kazunori Shinoda , Takashi Shiota , Shigeki Makino , Toshihiko Fukamachi
IPC分类号： G02B6/10 , G02B6/12
CPC分类号： G02B6/136 , G02B2006/12078 , G02B2006/12097 , G02B2006/12121 , G02B2006/12128 , G02B2006/12142
摘要： In the optical integrated devices with ridge waveguide structure based on the conventional technology, there occur such troubles as generation of a recess in a BJ section to easily cause a crystal defect due to the mass transport phenomenon of InP when a butt joint (BJ) is grown, lowering of reliability of the devices, and lowering in a yield in fabrication of devices. In the present invention, a protection layer made of InGaAsP is provided on the BJ section. The layer has high etching selectivity for the InP cladding layer and remains on the BJ section even after mesa etching.
摘要翻译：在基于传统技术的具有脊波导结构的光学集成装置中，当对接部（BJ）为对接接头（BJ）时，发生BJ部分中的凹部的产生容易引起由于InP的质量传递现象引起的晶体缺陷的问题增长，降低了器件的可靠性，并降低了器件制造的成品率。在本发明中，在BJ部分上设置由InGaAsP制成的保护层。该层对于InP包层具有高蚀刻选择性，并且即使在台面蚀刻之后也保留在BJ部分上。

9. 发明申请

US20100215063A1 PULSE LASER APPARATUS 审中-公开
标题翻译：脉冲激光装置
公开(公告)号：US20100215063A1
公开(公告)日：2010-08-26
申请号：US12686637
申请日：2010-01-13
申请人： Xin GAO , Hiroyuki Ohashi , Kazunori Shinoda , Hiroshi Okamoto , Masayuki Saitoh
发明人： Xin GAO , Hiroyuki Ohashi , Kazunori Shinoda , Hiroshi Okamoto , Masayuki Saitoh
IPC分类号： H01S3/11
CPC分类号： H01S3/1118 , H01S3/0604 , H01S3/0627 , H01S3/09415 , H01S3/10092 , H01S3/1611 , H01S3/1618 , H01S3/1643 , H01S3/2308
摘要： The pulse laser light source 1 is provided with an excitation light source 10, lenses 11 through 13, a dichroic mirror 14, an amplifier medium 21, a first reflection portion 22, a laser medium 23, a third reflection portion 24, a saturable absorber 25 and a second reflection portion 26. The reflection portion 22 and the reflection portion 26 compose a laser resonator having the laser medium 23, the reflection portion 24 and the saturable absorber 25 on a resonance path. Further, the amplifier medium 21, the reflection portion 22, the laser medium 23, the reflection portion 24, the saturable absorber 25 and the reflection portion 26 are disposed in order and are integrated with each other. Therefore, the pulse laser light source 1 is able to output pulse laser light of high energy with a short pulse width.
摘要翻译：脉冲激光光源1设置有激发光源10，透镜11至13，分色镜14，放大器介质21，第一反射部22，激光介质23，第三反射部24，可饱和吸收体 25和第二反射部分26.反射部分22和反射部分26在谐振路径上组成具有激光介质23，反射部分24和可饱和吸收体25的激光谐振器。此外，放大器介质21，反射部分22，激光介质23，反射部分24，可饱和吸收器25和反射部分26依次布置并且彼此一体化。因此，脉冲激光光源1能够以短脉冲宽度输出高能量的脉冲激光。

10. 发明授权

US07738521B2 Semiconductor laser device 有权
标题翻译：半导体激光器件
公开(公告)号：US07738521B2
公开(公告)日：2010-06-15
申请号：US11606186
申请日：2006-11-30
申请人： Shin'ichi Nakatsuka , Tsukuru Ohtoshi , Kazunori Shinoda , Akihisa Terano , Hitoshi Nakamura , Shigehisa Tanaka
发明人： Shin'ichi Nakatsuka , Tsukuru Ohtoshi , Kazunori Shinoda , Akihisa Terano , Hitoshi Nakamura , Shigehisa Tanaka
IPC分类号： H01S3/04 , H01S5/00
CPC分类号： H01S5/2231 , B82Y20/00 , H01S5/0421 , H01S5/18308 , H01S5/18369 , H01S5/2009 , H01S5/221 , H01S5/305 , H01S5/3063 , H01S5/3216 , H01S5/34333
摘要： A super-lattice structure is used for a portion of a laser device of a self-aligned structure to lower the resistance of the device by utilizing the extension of electric current in the layer, paying attention to the fact that the lateral conduction of high density doping in the super-lattice structure is effective for decreasing the resistance of the laser, in order to lower the operation voltage and increase the power in nitride type wide gap semiconductor devices in which crystals with high carrier density are difficult to obtain and the device resistance is high.
摘要翻译：超晶格结构用于自对准结构的激光器件的一部分，通过利用层中的电流的延伸来降低器件的电阻，注意高密度的横向传导的事实在超晶格结构中的掺杂对于降低激光器的电阻是有效的，以便降低操作电压并增加难以获得具有高载流子密度的晶体的氮化物型宽间隙半导体器件的功率，并且器件电阻高。

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