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1. 发明授权

US5814917A Surface acoustic wave equipment 失效
标题翻译：表面声波设备
公开(公告)号：US5814917A
公开(公告)日：1998-09-29
申请号：US676683
申请日：1996-07-10
申请人： Atsushi Isobe , Mitsutaka Hikita , Chisaki Takubo , Kengo Asai
发明人： Atsushi Isobe , Mitsutaka Hikita , Chisaki Takubo , Kengo Asai
IPC分类号： H03H9/02 , H03H9/145 , H03H9/25 , H01L41/04
CPC分类号： H03H9/02559 , H03H9/14538
摘要： Aluminum is used for the interdigital transducer mounted on a piezoelectric substrate to realize a surface acoustic wave transducer having a small capacity ratio, no spurious resonance, and a low loss. A .theta. rotated Y cut lithium niobate single crystal piezoelectric substrate is used for the piezoelectric material, a metal film of which principal ingredient is aluminum is used for the interdigital transducer, the direction of the interdigital transducer is made parallel to the X-axis of the lithium niobate single crystal, and thick h and electrode pitch P of the interdigital transducer have the following relationship: (.theta.+5).sup.2 /300+11/12.ltoreq.h/P.times.100-8.ltoreq.-0.0001.times.(.theta.+5).sup.3 +0.1625.times.(.theta.+5)+5.5 and -30.ltoreq..theta..ltoreq.20.
摘要翻译：铝用于安装在压电基板上的叉指换能器，以实现具有小容量比，无杂散谐振和低损耗的表面声波换能器。使用θ旋转的Y切割的铌酸锂单晶压电基板用于压电材料，主要成分为铝的金属膜用于叉指式换能器，叉指式换能器的方向与X轴的X轴平行铌酸锂单晶，并且叉指换能器的厚h和电极间距P具有以下关系：（θ+5）2/300 + 11/12

2. 发明授权

US6047306A CDMA communication RF signal processing apparatus using SAW 失效
标题翻译： CDMA通信RF信号处理装置采用SAW
公开(公告)号：US6047306A
公开(公告)日：2000-04-04
申请号：US980086
申请日：1997-11-26
申请人： Mitsutaka Hikita , Chisaki Takubo , Nobuhiko Shibagaki , Kazuyuki Sakiyama
发明人： Mitsutaka Hikita , Chisaki Takubo , Nobuhiko Shibagaki , Kazuyuki Sakiyama
IPC分类号： H03H9/145 , G06G7/195 , H03H9/42 , H03H9/72 , H04B1/707 , H04B1/7093 , H04J13/00 , G06G7/12 , H01L41/40
CPC分类号： H04B1/70712 , G06G7/195
摘要： A surface acoustic wave signal processing apparatus for processing first and second high-frequency signals having frequencies f.sub.1 and f.sub.2 respectively, which comprises: first and second surface acoustic wave delay elements for receiving the first and second high-frequency signals respectively and independently of each other, the delay elements being formed as surface acoustic wave excitation and reception transducers on a piezoelectric substrate so that a phase delay .phi..sub.1 with respect to the frequency f.sub.1 is substantially equal to a phase delay .phi..sub.2 with respect to the frequency f.sub.2 (that is, .phi..sub.1 .apprxeq..phi..sub.2); and a mixer for mixing first and second high-frequency output signals of the first and second surface acoustic wave delay elements so that a signal having a frequency .vertline.f.sub.1 -f.sub.2 .vertline. which is a difference between the two frequencies f.sub.1 and f.sub.2 is taken out as an output signal of the mixer.
摘要翻译：一种用于分别处理具有频率f1和f2的第一和第二高频信号的表面声波信号处理装置，包括：分别和彼此独立地接收第一和第二高频信号的第一和第二声表面波延迟元件延迟元件形成为压电基板上的表面声波激发和接收换能器，使得相对于频率f1的相位延迟phi 1基本上等于相对于频率f2的相位延迟phi 2（即， phi 1 APPROX phi 2）; 以及用于混合第一和第二表面声波延迟元件的第一和第二高频输出信号的混频器，使得具有频率| f1-f2 | 将两个频率之间的差分f1和f2作为混频器的输出信号取出。

3. 发明申请

US20150221845A1 THERMOELECTRIC CONVERSION DEVICE 审中-公开
标题翻译：热电转换装置
公开(公告)号：US20150221845A1
公开(公告)日：2015-08-06
申请号：US14421202
申请日：2012-08-31
申请人： Chisaki Takubo , Hideaki Takano , Kengo Asai , Takashi Naito , Tadashi Fujieda , Yuichi Sawai , Noriyuki Sakuma
发明人： Chisaki Takubo , Hideaki Takano , Kengo Asai , Takashi Naito , Tadashi Fujieda , Yuichi Sawai , Noriyuki Sakuma
IPC分类号： H01L35/04 , H01L35/18 , H01L35/20 , H01L35/16
CPC分类号： H01L35/04 , C03C14/006 , H01L35/14 , H01L35/16 , H01L35/18 , H01L35/20 , H01L35/32 , H01L35/34
摘要： In a thermoelectric conversion device, support substrates (13, 14), electrodes (11, 12) formed on the support substrates and thermoelectric conversion parts (7, 10) formed on the electrodes and containing semiconductor glass are disposed. The semiconductor glass is non-lead glass containing vanadium, and the electrodes contain any of Al, Ti, Ti nitride, W, W nitride, W silicide, Ta, Cr and Si.This constitution makes it possible to provide a device structure which can be produced by an inexpensive production process, uses a composite material with an excellent thermoelectric conversion characteristic and can solve the characteristic problem of the composite material. As a result, it is possible to provide a thermoelectric conversion device with excellent characteristics and high reliability at a low cost.
摘要翻译：在热电转换装置中，设置支撑基板（13,14），形成在支撑基板上的电极（11,12）和形成在电极上并且包含半导体玻璃的热电转换部（7,10）。半导体玻璃是含有钒的非铅玻璃，电极中含有Al，Ti，Ti的氮化物，W，W氮化物，W，硅化物，Ta，Cr，Si中的任意一种。这种结构使得可以提供可以通过廉价的制造工艺制造的器件结构，使用具有优异的热电转换特性的复合材料，并且可以解决复合材料的特征问题。结果，可以以低成本提供具有优异特性和高可靠性的热电转换装置。

4. 发明授权

US09511993B2 Semiconductor physical quantity detecting sensor 有权
标题翻译：半导体物理量检测传感器
公开(公告)号：US09511993B2
公开(公告)日：2016-12-06
申请号：US13983775
申请日：2012-01-18
申请人： Kiyoko Yamanaka , Heewon Jeong , Chisaki Takubo
发明人： Kiyoko Yamanaka , Heewon Jeong , Chisaki Takubo
IPC分类号： B81B7/02 , G01C19/5747 , G01C19/5769 , G01P15/125 , G01P15/18 , G01P15/08
CPC分类号： B81B7/02 , G01C19/5747 , G01C19/5769 , G01P15/125 , G01P15/18 , G01P2015/0822
摘要： A semiconductor physical quantity detection sensor includes (1) a first electrostatic capacitance formed by the movable electrode, and a first fixed electrode formed in a first conductive layer shared with the movable electrode, (2) a second electrostatic capacitance that is formed by the movable electrode, and a second fixed electrode formed in a second conductive layer different in a height from a substrate surface from the movable electrode, and (3) an arithmetic circuit that calculates the physical quantity on the basis of a change in the first and second electrostatic capacitances generated when the physical quantity is applied. In this configuration, an electric signal from the first electrostatic capacitance, and an electric signal from the second electrostatic capacitance are input to the arithmetic circuit.
摘要翻译：半导体物理量检测传感器包括（1）由可动电极形成的第一静电电容和形成在与可动电极共用的第一导电层中的第一固定电极，（2）由可动电极形成的第二静电电容电极和形成在与可动电极的基板表面不同高度的第二导电层中的第二固定电极，以及（3）基于第一和第二静电的变化来计算物理量的运算电路当施加物理量时产生的电容。在该结构中，来自第一静电电容的电信号和来自第二静电电容的电信号被输入到运算电路。

5. 发明申请

US20130346015A1 Semiconductor Physical Quantity Detecting Sensor 有权
标题翻译：半导体物理量检测传感器
公开(公告)号：US20130346015A1
公开(公告)日：2013-12-26
申请号：US13983775
申请日：2012-01-18
申请人： Kiyoko Yamanaka , Heewon Jeong , Chisaki Takubo
发明人： Kiyoko Yamanaka , Heewon Jeong , Chisaki Takubo
IPC分类号： B81B7/02
CPC分类号： B81B7/02 , G01C19/5747 , G01C19/5769 , G01P15/125 , G01P15/18 , G01P2015/0822
摘要： A semiconductor physical quantity detection sensor includes (1) a first electrostatic capacitance formed by the movable electrode, and a first fixed electrode formed in a first conductive layer shared with the movable electrode, (2) a second electrostatic capacitance that is formed by the movable electrode, and a second fixed electrode formed in a second conductive layer different in a height from a substrate surface from the movable electrode, and (3) an arithmetic circuit that calculates the physical quantity on the basis of a change in the first and second electrostatic capacitances generated when the physical quantity is applied. In this configuration, an electric signal from the first electrostatic capacitance, and an electric signal from the second electrostatic capacitance are input to the arithmetic circuit.
摘要翻译：半导体物理量检测传感器包括（1）由可动电极形成的第一静电电容和形成在与可动电极共用的第一导电层中的第一固定电极，（2）由可动电极形成的第二静电电容电极和形成在与可动电极的基板表面不同高度的第二导电层中的第二固定电极，以及（3）基于第一和第二静电的变化来计算物理量的运算电路当施加物理量时产生的电容。在该结构中，来自第一静电电容的电信号和来自第二静电电容的电信号被输入到运算电路。

6. 发明申请

US20050040497A1 Semiconductor device and manufacturing method of the same 审中-公开
标题翻译：半导体器件及其制造方法相同
公开(公告)号：US20050040497A1
公开(公告)日：2005-02-24
申请号：US10878358
申请日：2004-06-29
申请人： Chisaki Takubo , Hiroji Yamada , Kazuhiro Mochizuki , Kenichi Tanaka , Tomonori Tanoue , Hiroyuki Uchiyama
发明人： Chisaki Takubo , Hiroji Yamada , Kazuhiro Mochizuki , Kenichi Tanaka , Tomonori Tanoue , Hiroyuki Uchiyama
IPC分类号： H01L21/331 , H01L21/306 , H01L29/04 , H01L29/06 , H01L29/737
CPC分类号： H01L29/7371 , H01L21/30612 , H01L29/045 , H01L29/0657
摘要： The technical subject of the invention is to inhibit disconnection of electrodes caused by a step and bursting caused by residual air. That is, an object of the present invention is to provide a semiconductor device capable of overcoming a drawback due to the shape of a concave portion present in the zinc blende type compound semiconductor substrate in which the area of the bottom is larger than the surface in the cross sectional shape, as well as a manufacturing method thereof. According to the invention, a hole or step present in the semiconductor substrate constituting the semiconductor device is formed into a normal mesa shape irrespective of the orientation of the crystals on the surface of the semiconductor substrate. Accordingly, the present invention uses a novel wet etching solution having an etching rate for a portion below the etching mask higher than that in the direction of the depth of the semiconductor substrate.
摘要翻译：本发明的技术课题是抑制由残留空气引起的台阶和破裂引起的电极断开。也就是说，本发明的目的是提供一种半导体器件，其能够克服存在于闪锌矿型化合物半导体衬底中的凹部的形状的缺陷，其中底部的面积大于其中的表面横截面形状及其制造方法。根据本发明，构成半导体器件的半导体衬底中存在的孔或台阶形成为正常的台面形状，而与半导体衬底的表面上的晶体取向无关。因此，本发明使用对蚀刻掩模下方的蚀刻速度高于半导体衬底的深度方向的蚀刻速率的新型湿式蚀刻溶液。

7. 发明申请

US20060081879A1 Semiconductor device and a manufacturing method thereof, and semiconductor module 失效
标题翻译：半导体装置及其制造方法以及半导体模块
公开(公告)号：US20060081879A1
公开(公告)日：2006-04-20
申请号：US11247234
申请日：2005-10-12
申请人： Kenichi Tanaka , Hidetoshi Matsumoto , Isao Ohbu , Kazuhiro Mochizuki , Tomonori Tanoue , Chisaki Takubo , Hiroyuki Uchiyama
发明人： Kenichi Tanaka , Hidetoshi Matsumoto , Isao Ohbu , Kazuhiro Mochizuki , Tomonori Tanoue , Chisaki Takubo , Hiroyuki Uchiyama
IPC分类号： H01L31/109
CPC分类号： H01L23/482 , H01L24/48 , H01L2224/48091 , H01L2224/48227 , H01L2924/00014 , H01L2924/01078 , H01L2924/01079 , H01L2924/09701 , H01L2924/12041 , H01L2924/1305 , H01L2924/14 , H01L2924/1423 , H01L2924/16152 , H01L2924/19041 , H01L2924/30107 , H01L2924/00 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： The present invention provides a semiconductor device which comprises active components, passive components, wiring lines and electrodes and are satisfactory in terms of mechanical strength, miniaturization and thermal stability. In the semiconductor device, openings are formed just below active components. These openings are filled with conductor layers. Conductor layers are also formed where openings are not formed.
摘要翻译：本发明提供一种半导体器件，其包括有源部件，无源部件，布线和电极，并且在机械强度，小型化和热稳定性方面令人满意。在半导体器件中，开口形成在活性部件的正下方。这些开口填充有导体层。还形成了未形成开口的导体层。

8. 发明授权

US08643927B2 MEMS device and method of manufacturing MEMS device 有权
标题翻译： MEMS器件及制造MEMS器件的方法
公开(公告)号：US08643927B2
公开(公告)日：2014-02-04
申请号：US13178480
申请日：2011-07-07
申请人： Chisaki Takubo , Heewon Jeong
发明人： Chisaki Takubo , Heewon Jeong
IPC分类号： G02B26/08
CPC分类号： G01P15/125 , B81B3/001 , G01C19/5747 , G01P15/0802 , G01P2015/0814 , G01P2015/0837 , G01P2015/0874 , G01P2015/088 , G02B26/0841 , G02B26/105 , H01G5/18 , H01L21/76898 , H01L21/84 , H01L23/481 , H01L27/13 , H01L28/60 , H01L2924/0002 , H01L2924/00
摘要： A protrusion formation hole is provided so as to pierce a support substrate. A polysilicon film as an electrical conducting material is embedded in the protrusion formation hole through an oxide silicon film. The polysilicon film partially bulges out of the protrusion formation hole toward a movable section to form a protruding section. In other words, the polysilicon film bulges out of the protrusion formation hole toward the movable section to form the protruding section. Thereby, a movable section included in MEMS can be prevented from sticking to other members.
摘要翻译：提供突起形成孔以刺穿支撑基板。作为导电材料的多晶硅膜通过氧化物硅膜被包埋在突起形成孔中。多晶硅膜从突出形成孔朝向可移动部分部分地凸出以形成突出部分。换句话说，多晶硅膜从突起形成孔朝向可动部凸出，形成突出部。由此，能够防止包含在MEMS中的可动部附着在其他部件上。

9. 发明授权

US07547929B2 Semiconductor HBT MMIC device and semiconductor module 失效
标题翻译：半导体HBT MMIC器件和半导体模块
公开(公告)号：US07547929B2
公开(公告)日：2009-06-16
申请号：US11247234
申请日：2005-10-12
申请人： Kenichi Tanaka , Hidetoshi Matsumoto , Isao Ohbu , Kazuhiro Mochizuki , Tomonori Tanoue , Chisaki Takubo , Hiroyuki Uchiyama
发明人： Kenichi Tanaka , Hidetoshi Matsumoto , Isao Ohbu , Kazuhiro Mochizuki , Tomonori Tanoue , Chisaki Takubo , Hiroyuki Uchiyama
IPC分类号： H01L29/40
CPC分类号： H01L23/482 , H01L24/48 , H01L2224/48091 , H01L2224/48227 , H01L2924/00014 , H01L2924/01078 , H01L2924/01079 , H01L2924/09701 , H01L2924/12041 , H01L2924/1305 , H01L2924/14 , H01L2924/1423 , H01L2924/16152 , H01L2924/19041 , H01L2924/30107 , H01L2924/00 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： The present invention provides a semiconductor device which comprises active components, passive components, wiring lines and electrodes and are satisfactory in terms of mechanical strength, miniaturization and thermal stability. In the semiconductor device, openings are formed just below active components. These openings are filled with conductor layers. Conductor layers are also formed where openings are not formed.
摘要翻译：本发明提供一种半导体器件，其包括有源部件，无源部件，布线和电极，并且在机械强度，小型化和热稳定性方面令人满意。在半导体器件中，开口形成在活性部件的正下方。这些开口填充有导体层。还形成了未形成开口的导体层。

10. 发明授权

US07067857B2 Semiconductor device having led out conductor layers, manufacturing method of the same, and semiconductor module 失效
标题翻译：具有引出导体层的半导体器件，其制造方法和半导体模块
公开(公告)号：US07067857B2
公开(公告)日：2006-06-27
申请号：US10788277
申请日：2004-03-01
申请人： Kazuhiro Mochizuki , Isao Ohbu , Tomonori Tanoue , Chisaki Takubo , Kenichi Tanaka
发明人： Kazuhiro Mochizuki , Isao Ohbu , Tomonori Tanoue , Chisaki Takubo , Kenichi Tanaka
IPC分类号： H01L29/739 , H01L31/0328 , H01L31/0336 , H01L31/072 , H01L31/109
CPC分类号： H01L27/0823 , H01L29/41708 , H01L29/42304 , H01L29/7371 , H01L2224/05568 , H01L2224/05573 , H01L2224/16 , H01L2224/16225 , H01L2924/00014 , H01L2924/01078 , H01L2924/01079 , H01L2924/09701 , H01L2924/1305 , H01L2924/16152 , H01L2924/19105 , H01L2924/00 , H01L2224/05599
摘要： The gist of the present invention is as follows: In a monolithic microwave integrate circuit (MMIC) using a heterojunction bipolar transistor (HBT), via holes are respectively formed from the bottom of the MMIC for the emitter, base and collector. Of the via holes, one is located so as to face the HBT. The respective topside electrodes for the other via holes located so as not to face the HBT are provided in contact with the MMIC substrate.
摘要翻译：本发明的要点如下：在使用异质结双极晶体管（HBT）的单片微波积分电路（MMIC）中，从MMIC的底部分别形成用于发射极，基极和集电极的通孔。通孔中的一个位于与HBT相对的位置。用于不与HBT相对的另一个通孔的相应顶侧电极设置成与MMIC衬底接触。

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