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1. 发明授权

US07221242B2 Bulk acoustic wave resonator and manufacturing method thereof, filter using the same, semiconductor integrated circuit device using the same, and high frequency module using the same 失效
标题翻译：体声波谐振器及其制造方法，使用其的滤波器，使用其的半导体集成电路器件，以及使用其的高频模块
公开(公告)号：US07221242B2
公开(公告)日：2007-05-22
申请号：US11067374
申请日：2005-02-28
申请人： Kengo Asai , Hisanori Matsumoto , Atsushi Isobe , Mitsutaka Hikita
发明人： Kengo Asai , Hisanori Matsumoto , Atsushi Isobe , Mitsutaka Hikita
IPC分类号： H03H9/00 , H01L41/00
CPC分类号： H03H3/02 , H03H9/0542 , H03H9/0571 , H03H9/174 , H03H9/564 , H03H9/706
摘要： A bulk acoustic wave resonator in which the problem of the technology for forming the diaphragm structure is resolved, which is more compact and improved the frequency accuracy, and the manufacturing method thereof, a filter using the same, a semiconductor integrated circuit device using the same, and a high frequency module using the same are provided. The bulk acoustic wave resonator according to the present invention comprises a substrate having a first surface and a second surface opposite to the first surface, and a staked resonator including a first electrode film in contact with the first surface, a piezoelectric film overlaying the first electrode film and a second electrode film overlaying the piezoelectric film. The substrate is provided with an air gap including a first aperture opening at the first surface and a second aperture opening at the second surface at the position corresponding to the staked resonator, respectively and having air gap generally vertical shape to the first surface, and another air gap having a tapered shape in the vicinity of the first surface.
摘要翻译：解决了用于形成隔膜结构的技术的问题的体声波谐振器，其更紧凑并且提高了频率精度，其制造方法，使用该隔膜结构的滤波器，使用该隔膜结构的半导体集成电路器件，并且提供使用该模块的高频模块。根据本发明的体声波谐振器包括具有与第一表面相对的第一表面和第二表面的基板，以及包括与第一表面接触的第一电极膜的支架谐振器，覆盖第一电极的压电膜膜和覆盖压电膜的第二电极膜。衬底设置有气隙，该空气间隙包括在第一表面处的第一孔径开口和位于对应于桩状共振器的位置处的第二表面处的第二孔口开口，并且具有大致垂直于第一表面的气隙，另一个气隙在第一表面附近具有锥形形状。

2. 发明申请

US20060158283A1 Piezoelectric thin film resonators 失效
公开(公告)号：US20060158283A1
公开(公告)日：2006-07-20
申请号：US11333282
申请日：2006-01-18
申请人： Mitsutaka Hikita , Nobuhiko Shibagaki , Atsushi Isobe , Kengo Asai , Hisanori Matsumoto
发明人： Mitsutaka Hikita , Nobuhiko Shibagaki , Atsushi Isobe , Kengo Asai , Hisanori Matsumoto
IPC分类号： H03H9/54
CPC分类号： H03H9/174 , H03H9/02102 , H03H9/173 , H03H9/178
摘要： A piezoelectric thin film resonator is formed on a base substrate such as made of Si in which the resonance frequency is substantially determined by the lateral size not by the thickness of the resonator, whereby a resonator for use in TCXO, etc. is provided by the thin film technique, which enables to reduce the thickness of the film and the size of the resonator and integration with Si-based IC incorporating the resonator in one identical substrate.

3. 发明授权

US5010269A SAW resonator having a broad bandwidth 失效
标题翻译：具有宽带宽的SAW谐振器
公开(公告)号：US5010269A
公开(公告)日：1991-04-23
申请号：US282177
申请日：1988-12-09
申请人： Mitsutaka Hikita , Atsushi Sumioka , Toyoji Tabuchi , Kazuhito Kurosawa , Tuneo Kinoshita
发明人： Mitsutaka Hikita , Atsushi Sumioka , Toyoji Tabuchi , Kazuhito Kurosawa , Tuneo Kinoshita
IPC分类号： H03H3/08 , H03H9/145 , H03H9/25
CPC分类号： H03H9/14505 , H03H9/25
摘要： A SAW resonator includes resonating SAW transducer units formed on a piezoelectric substrate and juxtaposed in a direction of propagation of acoustic waves, and a unidirectionally reflecting SAW transducer unit provided in each end of the juxtaposed resonating SAW transducer units on the substrate. Each resonating SAW transducer unit includes first and second SAW transducers connected in series and/or in parallel with each other. Each unidirectionally reflecting SAW transducer unit includes first and second comb-like electrodes having a plurality of first second fingers, respectively, formed on the substrate, in which: two second fingers are interposed between each pair of adjacent two first fingers; at least one reflective stripe is provided between the two second fingers interposed between at least one pair of adjacent two first fingers; and the distances between the reflective stripe and the two second fingers and the widths of the two second fingers are determined such that acoustic waves produced by the fingers of the reflecting SAW transducer units and propagating in a first direction perpendicular to the direction of the length of the fingers and reflected by the reflective stripe in a second direction perpendicular to the first direction are in phase with acoustic waves propagating in the second direction and acoustic waves produced by the fingers of the reflecting SAW transducer units and propagating in the second direction and reflected by the reflective stripe in the first direction are out of phase with acoustic waves propagating in the first direction.
摘要翻译： SAW谐振器包括形成在压电基板上并且在声波传播方向上并置的谐振SAW传感器单元，以及设置在基片上并置的谐振SAW换能器单元的每一端的单向反射SAW换能器单元。每个谐振SAW换能器单元包括彼此串联和/或并联连接的第一和第二SAW换能器。每个单向反射SAW换能器单元包括分别形成在基板上的多个第一第二指状物的第一和第二梳状电极，其中：两个第二指状物插入在每对相邻的两个第一指状物之间; 在插入在至少一对相邻的两个第一指状物之间的两个第二指状物之间提供至少一个反射条纹; 并且确定反射条和两个第二指状物之间的距离和两个第二指状物的宽度，使得由反射SAW换能器单元的指状物产生的声波在垂直于第二指状物的长度方向的第一方向上传播手指并且在与第一方向垂直的第二方向上由反射条纹反射，与在第二方向上传播的声波和由反射SAW换能器单元的指状产生的声波相同，并且在第二方向上传播并由第在第一方向上的反射条纹与在第一方向上传播的声波不同相。

4. 发明授权

US4803449A Filter combining surface acoustic wave resonators 失效
标题翻译：滤波器组合声表面波谐振器
公开(公告)号：US4803449A
公开(公告)日：1989-02-07
申请号：US122325
申请日：1987-11-18
申请人： Mitsutaka Hikita , Yoichi Saigo , Kazuhito Kurosawa
发明人： Mitsutaka Hikita , Yoichi Saigo , Kazuhito Kurosawa
IPC分类号： H03H9/145 , H03H3/08 , H03H9/02 , H03H9/64 , H03H9/25
CPC分类号： H03H9/6479 , H03H9/02755 , H03H9/6443 , H03H9/6463 , H03H9/14597
摘要： This invention relates to the structure of a band-pass or band-rejection filters by combining a plurality of one-port surface acoustic wave resonators whose interdigital electrode fingers are disposed on a piezoelectric substrate. The filter combining surface acoustic wave resonators of the present invention consists of a series circuit of the one-port surface acoustic wave resonators disposed on a piezoelectric substrate for transmitting elastic surface wave and a plurality of circuit elements containing capacitance elements, and one-port surface acoustic wave resonators disposed between the electrodes of the plurality of circuit elements and the common ground. This structure can accomplish a filter having a low loss, high power handling capability and high design freedom of rejection- and passing-band.
摘要翻译：本发明涉及通过组合多个单指示声表面波谐振器的带通或带阻滤波器的结构，其中叉形电极指配置在压电基片上。组合本发明的表面声波谐振器的滤波器由布置在用于传播弹性表面波的压电基片上的单端口声表面波谐振器和包含电容元件的多个电路元件的串联电路和单端口表面声波谐振器设置在多个电路元件的电极和公共地之间。该结构可以实现具有低损耗，高功率处理能力和高排斥与通带设计自由度的滤波器。

5. 发明授权

US07385464B2 Resonator type filter 失效
标题翻译：谐振器型滤波器
公开(公告)号：US07385464B2
公开(公告)日：2008-06-10
申请号：US11312414
申请日：2005-12-21
申请人： Nobuhiko Shibagaki , Mitsutaka Hikita
发明人： Nobuhiko Shibagaki , Mitsutaka Hikita
IPC分类号： H03H9/70 , H03H9/54 , H03H9/64
CPC分类号： H03H9/605 , H03H9/6483
摘要： A resonator is connected in parallel to at least one serial-arm-connected resonator in a resonator type filter having a serial arm and a parallel arm. At this time, the resonance frequency of the resonator connected in parallel is set to be substantially the same as the resonance frequency of the parallel-arm-connected resonator.This makes it possible to prevent the deterioration of attenuation levels at the lower-frequency side of the filter, caused by an increase in the resistance of a connection element due to an increase in packaging density.
摘要翻译：谐振器与具有串联臂和并联臂的谐振器型滤波器中的至少一个串联臂连接的谐振器并联连接。此时，并联连接的谐振器的谐振频率被设定为与并联臂连接的谐振器的谐振频率基本相同。这使得可以防止由于封装密度的增加导致的连接元件的电阻的增加而导致的滤波器的低频侧的衰减电平的劣化。

6. 发明申请

US20060141944A1 Antenna sharing device and wireless communication terminal using the same 失效
公开(公告)号：US20060141944A1
公开(公告)日：2006-06-29
申请号：US11303924
申请日：2005-12-19
申请人： Nobuhiko Shibagaki , Mitsutaka Hikita , Kazuyuki Sakiyama , Osamu Hikino
发明人： Nobuhiko Shibagaki , Mitsutaka Hikita , Kazuyuki Sakiyama , Osamu Hikino
IPC分类号： H04B1/44
CPC分类号： H04B1/48 , H04B1/006
摘要： A compact, inexpensive antenna sharing device meeting requirements in terms of transmitter distortion characteristic and ESD characteristic is provided which separates and combines signals transmitted and received in first to third signal bands and which thereby enables an antenna terminal to be shared as a common terminal. It includes a diplexer realizing an attenuation characteristic for protection against ESD, a compound semiconductor switch with an IIP3 of 66 dBm or more, and an inexpensive PIN diode switch.

7. 发明申请

US20050168102A1 Film bulk acoustic wave resonator, film bulk acoustic wave resonator filter and method of manufacturing film bulk acoustic wave resonator 审中-公开
标题翻译：薄膜体声波谐振器，薄膜体声波谐振滤波器及薄膜体声波谐振器的制造方法
公开(公告)号：US20050168102A1
公开(公告)日：2005-08-04
申请号：US10909335
申请日：2004-08-03
申请人： Hisanori Matsumoto , Kengo Asai , Atsushi Isobe , Mitsutaka Hikita
发明人： Hisanori Matsumoto , Kengo Asai , Atsushi Isobe , Mitsutaka Hikita
IPC分类号： H03H9/54 , H01L41/08 , H03H3/02 , H03H3/04 , H03H9/02 , H03H9/17 , H03H9/56 , H03H9/70
CPC分类号： H03H9/564 , H03H3/04 , H03H9/02157 , H03H9/174 , H03H9/568 , H03H2003/023 , H03H2003/0442 , H03H2003/0471
摘要： The present invention provides a film bulk acoustic wave resonator (FBAR) filter that can keep the Q factor high. The FBAR filter comprises a first FBAR with a first resonant frequency and a second FBAR with a second resonant frequency, formed on a same substrate. The FBAR filter has such a structure that a first underlayer is formed between the substrate and a first bottom electrode layer and a second underlayer is formed between the substrate and a second bottom electrode layer, the first underlayer thickness being different from the second underlayer thickness.
摘要翻译：本发明提供一种可以使Q因子保持高的薄膜体声波谐振器（FBAR）滤波器。 FBAR滤波器包括形成在同一衬底上的具有第一谐振频率的第一FBAR和具有第二谐振频率的第二FBAR。 FBAR滤光器具有在基板和第一底部电极层之间形成第一底层的结构，在基板和第二底部电极层之间形成第二下层，第一下层厚度与第二下层厚度不同。

8. 发明授权

US06346761B1 Surface acoustic wave device capable of suppressing spurious response due to non-harmonic higher-order modes 失效
标题翻译：能够抑制由非谐波高阶模式引起的寄生响应的声表面波器件
公开(公告)号：US06346761B1
公开(公告)日：2002-02-12
申请号：US09492078
申请日：2000-01-27
申请人： Atsushi Isobe , Mitsutaka Hikita , Kengo Asai , Atsushi Sumioka
发明人： Atsushi Isobe , Mitsutaka Hikita , Kengo Asai , Atsushi Sumioka
IPC分类号： H01L4104
CPC分类号： H03H9/1452 , H03H9/02818
摘要： A surface acoustic wave device which includes a piezoelectric substrate, and an interdigital transducer formed on a planar surface of the piezoelectric substrate, and having first and second bus bars, a first plurality of electrode fingers connected to the first bus bar, and a second plurality of electrode fingers connected to the second bus bar. The first and second plurality of electrode fingers of the interdigital transducer have an electrode cross region in which the first and second plurality of electrode fingers are arranged alternatively. Each boundary between the first and second bus bars and a grating region of the first and second plurality of electrode fingers is arranged such that the boundary is not substantially parallel, with a transmission direction of surface acoustic waves excited by the interdigital transducer.
摘要翻译：一种表面声波装置，包括压电基片和形成在压电基片的平面上的叉指换能器，并具有第一和第二汇流条，连接到第一汇流条的第一多个电极指，以及第二多个的电极指连接到第二汇流条。叉指式换能器的第一和第二多个电极指具有交替布置第一和第二多个电极指的电极交叉区域。第一和第二母线之间的每个边界以及第一和第二多个电极指的光栅区域被布置成使得边界基本上不平行，并且由叉指换能器激发的表面声波的透射方向。

9. 发明授权

US5814917A Surface acoustic wave equipment 失效
标题翻译：表面声波设备
公开(公告)号：US5814917A
公开(公告)日：1998-09-29
申请号：US676683
申请日：1996-07-10
申请人： Atsushi Isobe , Mitsutaka Hikita , Chisaki Takubo , Kengo Asai
发明人： Atsushi Isobe , Mitsutaka Hikita , Chisaki Takubo , Kengo Asai
IPC分类号： H03H9/02 , H03H9/145 , H03H9/25 , H01L41/04
CPC分类号： H03H9/02559 , H03H9/14538
摘要： Aluminum is used for the interdigital transducer mounted on a piezoelectric substrate to realize a surface acoustic wave transducer having a small capacity ratio, no spurious resonance, and a low loss. A .theta. rotated Y cut lithium niobate single crystal piezoelectric substrate is used for the piezoelectric material, a metal film of which principal ingredient is aluminum is used for the interdigital transducer, the direction of the interdigital transducer is made parallel to the X-axis of the lithium niobate single crystal, and thick h and electrode pitch P of the interdigital transducer have the following relationship: (.theta.+5).sup.2 /300+11/12.ltoreq.h/P.times.100-8.ltoreq.-0.0001.times.(.theta.+5).sup.3 +0.1625.times.(.theta.+5)+5.5 and -30.ltoreq..theta..ltoreq.20.
摘要翻译：铝用于安装在压电基板上的叉指换能器，以实现具有小容量比，无杂散谐振和低损耗的表面声波换能器。使用θ旋转的Y切割的铌酸锂单晶压电基板用于压电材料，主要成分为铝的金属膜用于叉指式换能器，叉指式换能器的方向与X轴的X轴平行铌酸锂单晶，并且叉指换能器的厚h和电极间距P具有以下关系：（θ+5）2/300 + 11/12

10. 发明授权

US5422615A High frequency circuit device 失效
标题翻译：高频电路器件
公开(公告)号：US5422615A
公开(公告)日：1995-06-06
申请号：US120470
申请日：1993-09-14
申请人： Nobuhiko Shibagaki , Mitsutaka Hikita , Toyoji Tabuchi , Takatoshi Akagi , Satoshi Wakamori , Tomomi Matsumoto
发明人： Nobuhiko Shibagaki , Mitsutaka Hikita , Toyoji Tabuchi , Takatoshi Akagi , Satoshi Wakamori , Tomomi Matsumoto
IPC分类号： H01L23/66 , H03H9/05 , H01L23/12 , H01P5/00
CPC分类号： H03H9/0552 , H01L23/66 , H03H9/1071 , H01L2224/451 , H01L2224/48091 , H01L2224/48227 , H01L24/45 , H01L24/48 , H01L2924/00014 , H01L2924/15153 , H01L2924/1517 , H01L2924/1532 , H01L2924/16152 , H01L2924/16195 , H01L2924/19041 , H01L2924/19106 , H01L2924/30107 , H01L2924/3011 , H01L2924/3025
摘要： In a high frequency circuit device, inductive circuit elements constituting a matching circuit are constructed of so-called helical coils having fine metal wires wound in a hollow solenoid form, which are disposed inside a package in which a high frequency circuit element such as a surface acoustic wave element or the like is mounted. The high frequency circuit device may be utilized in equipment such as wireless communication equipment for reducing the size as well as providing good high frequency characteristics.
摘要翻译：在高频电路装置中，构成匹配电路的感性电路元件由具有中空螺线管形式的细金属线的所谓的螺旋线圈构成，该螺旋线圈设置在包含有高频电路元件如表面安装声波元件等。高频电路装置可以用于诸如无线通信设备的设备中以减小尺寸并提供良好的高频特性。

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