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1. 发明申请

US20110304243A1 Thin-Film Piezoelectric Acoustic Wave Resonator and High-Frequency Filter 审中-公开
标题翻译：薄膜压电声波谐振器和高频滤波器
公开(公告)号：US20110304243A1
公开(公告)日：2011-12-15
申请号：US13201344
申请日：2010-02-18
申请人： Atsushi Isobe , Kengo Asai
发明人： Atsushi Isobe , Kengo Asai
IPC分类号： H01L41/04
CPC分类号： H03H9/173 , H03H9/564 , H03H9/568 , H03H9/587 , H03H9/605
摘要： A thin-film piezoelectric acoustic wave resonator that has a large k2, can trap acoustic energy in a resonating part, does not excite spurious resonance, or can finely adjust resonance frequency and a high-frequency filter using the thin-film piezoelectric acoustic wave resonator are provided without increasing the number of processes. At both ends of a vibrating part (1), fixing parts (8) are physically connected, and between the vibrating part (1) and each of the fixing parts (8), an acoustic insulating part (10) and a phase rotating part (11) are physically connected. As with the vibrating part (1), the acoustic insulating part (10) and the phase rotating part (11) are made up of an upper metal film (3), a piezoelectric thin film, and a lower metal film, and an acoustic wave reflector (6) is provided on each of an upper surface, a lower surface, and side surfaces of the vibrating part (1), the acoustic insulating part (10), and the phase rotating part (11). The vibrating part (1) has a width smaller than its length (La) and also smaller than its thickness, and width/thickness is smaller than 1.
摘要翻译：具有大k2的薄膜压电声波谐振器可以捕获谐振部分中的声能，不会激发寄生谐振，或者可以使用薄膜压电声波谐振器来微调谐谐振频率和高频滤波器在不增加处理次数的情况下被提供。在振动部件（1）的两端，固定部件（8）物理连接，并且在振动部件（1）和每个固定部件（8）之间，隔音部件（10）和相转动部件（11）物理连接。与振动部件（1）一样，隔音部件（10）和相位旋转部件（11）由上部金属膜（3），压电薄膜和下部金属膜构成，声学波形反射器（6）设置在振动部分（1），隔音部分（10）和相位旋转部分（11）的上表面，下表面和侧表面中的每一个上。振动部件（1）的宽度比其长度（La）小，也比其厚度小，宽度/厚度小于1。

2. 发明申请

US20110148257A1 THIN FILM TUNING-FORK TYPE INFLECTION RESONATOR AND ELECTRIC SIGNAL PROCESSING ELEMENT 失效
标题翻译：薄膜调谐型输入谐振器和电信号处理元件
公开(公告)号：US20110148257A1
公开(公告)日：2011-06-23
申请号：US13036318
申请日：2011-02-28
申请人： Atsushi Isobe , Nobuhiko Shibagaki , Kengo Asai , Hisanori Matsumoto
发明人： Atsushi Isobe , Nobuhiko Shibagaki , Kengo Asai , Hisanori Matsumoto
IPC分类号： H01L41/047 , H01L41/04
CPC分类号： H03H9/21 , H03H2003/026
摘要： A compact resonator has a wide bandwidth and a small variation of the specific vibration frequency. The resonator is a thin film tuning-fork type inflection resonator in which a thin film made of a piezoelectric material is formed on a substrate on which a lower electrode is formed, and an upper electrode is formed on the piezoelectric thin film.
摘要翻译：紧凑型谐振器具有宽带宽和特定振动频率的小变化。谐振器是薄膜音叉式拐点共振器，其中在其上形成有下电极的基板上形成由压电材料制成的薄膜，并且在压电薄膜上形成上电极。

3. 发明申请

US20110037343A1 Elastic Wave Device 审中-公开
标题翻译：弹性波装置
公开(公告)号：US20110037343A1
公开(公告)日：2011-02-17
申请号：US12832832
申请日：2010-07-08
申请人： Atsushi ISOBE , Kengo Asai
发明人： Atsushi ISOBE , Kengo Asai
IPC分类号： H01L41/04
CPC分类号： H03H9/0222 , H03H9/02559
摘要： In a boundary elastic wave resonator formed with a cross finger type transducer (IDT) of a wave length λ of a boundary elastic wave, a silicon oxide film, and an aluminum nitride film above a surface of a θYX-LN single-crystal piezoelectric substrate having a predetermined cut angle θ, a film thickness h1 and a cut angle θ or the like of the silicon oxide film are optimized. For example, the film thickness h1 and the cut angle θ are made to be 127.5°≦θ≦129.5° and 20%≦h1/λ≦100%.
摘要翻译：在由边界弹性波的波长λ的交叉型换能器（IDT）形成的边界弹性波谐振器中，氧化硅膜和在该表面上方的氮化铝膜; YX-LN单晶具有预定切割角度的压电基片;膜厚度h1和切割角度; 优化氧化硅膜等。例如，膜厚度h1和切割角度＆amp; 制成为127.5°＆nlE;＆amp; thetas;＆nlE; 129.5°和20％＆nlE; h1 /λ＆nlE; 100％。

4. 发明授权

US07675387B2 Surface acoustic wave device and communication terminal using the same 失效
标题翻译：表面声波装置和通信终端使用相同
公开(公告)号：US07675387B2
公开(公告)日：2010-03-09
申请号：US11514229
申请日：2006-09-01
申请人： Kazuyuki Sakiyama , Kengo Asai , Atsushi Isobe , Kunio Matsumoto , Shinichi Fujiwara
发明人： Kazuyuki Sakiyama , Kengo Asai , Atsushi Isobe , Kunio Matsumoto , Shinichi Fujiwara
IPC分类号： H01L41/00
CPC分类号： H03H9/02574 , H03H9/02834
摘要： A surface acoustic wave device in the present invention is provided with a piezoelectric substrate, a supporting substrate being jointed to the piezoelectric substrate and including a material different in expansion coefficient from the piezoelectric substrate and an interdigital electrode for exciting a surface acoustic wave, the electrode being arranged on the surface of the piezoelectric substrate. Either the interdigital electrode or the piezoelectric substrate is configured so that the interdigital electrode is 40% or more to 70% or less as long as the piezoelectric substrate in the direction to which a surface acoustic wave propagates.
摘要翻译：本发明的声表面波装置具有压电基板，支撑基板与压电基板连接，并且具有与压电基板不同的膨胀系数的材料和用于激励表面声波的叉指电极，所述电极布置在压电基板的表面上。叉指电极或压电基板之间的配置使得叉指电极与表面声波传播方向上的压电基片一样长度为40％以上至70％以下。

5. 发明申请

US20080111651A1 Thin film piezoelectric vibrator, thin film piezoelectric bulk acoustic wave resonator, and radio-frequency filter using such resonator 有权
标题翻译：薄膜压电振动器，薄膜压电体声波谐振器和使用这种谐振器的射频滤波器
公开(公告)号：US20080111651A1
公开(公告)日：2008-05-15
申请号：US11979905
申请日：2007-11-09
申请人： Atsushi Isobe , Kengo Asai , Hisanori Matsumoto
发明人： Atsushi Isobe , Kengo Asai , Hisanori Matsumoto
IPC分类号： H03H9/54 , H03H9/17
CPC分类号： H03H9/172 , H03H3/02 , H03H9/564 , H03H9/568 , H03H2003/021 , H03H2009/241
摘要： A thin film piezoelectric bulk acoustic wave resonator has a multilayer structure including a piezoelectric thin film, a first metal electrode film, and a second metal electrode film. At least a part of the piezoelectric thin film is interposed between the first and second metal electrodes. A resonance part and a connection part are formed on an insulating substrate as films by a thin film forming apparatus. The resonance part vibrates in radial extension mode with a center of the piezoelectric thin film used as a node, the piezoelectric thin film of two resonance parts is polarized in a direction perpendicular to a film surface, and a width of the connection part is one-fourth or less of a width of two resonance parts.
摘要翻译：薄膜压电体声波谐振器具有包括压电薄膜，第一金属电极薄膜和第二金属电极薄膜的多层结构。压电薄膜的至少一部分介于第一和第二金属电极之间。共振部和连接部通过薄膜形成装置形成在绝缘基板上作为膜。谐振部分以径向延伸模式振动，以压电薄膜的中心作为节点，两个谐振部分的压电薄膜在垂直于薄膜表面的方向上极化，连接部分的宽度为一倍，两个共振部分的宽度的四分之一或更小。

6. 发明申请

US20070267942A1 PIEZOELECTRIC FILM RESONATOR, RADIO-FREQUENCY FILTER USING THEM, AND RADIO-FREQUENCY MODULE USING THEM 审中-公开
标题翻译：压电薄膜谐振器，使用它们的无线电频率滤波器和使用它们的无线电频率模块
公开(公告)号：US20070267942A1
公开(公告)日：2007-11-22
申请号：US11746955
申请日：2007-05-10
申请人： Hisanori MATSUMOTO , Atsushi ISOBE
发明人： Hisanori MATSUMOTO , Atsushi ISOBE
IPC分类号： H03H9/25
CPC分类号： H03H9/02543 , H03H9/02228 , H03H9/02637 , H03H9/173 , H03H9/174 , H03H9/175 , H03H9/178
摘要： A piezoelectric film resonator for a radio-frequency circuit according to an aspect of the present invention includes a substrate and a multilayer film provided on the substrate. The multilayer film has a stacked structure in which at least two piezoelectric layers and at least three electrode layers disposed with each of the piezoelectric layers therebetween are stacked. At least one of the electrode layers is an electrode layer for excitation. The electrode layer for excitation has a structure in which a plurality of unit patterns as elements of the electrode layer for excitation are disposed periodically along a direction substantially perpendicular to a stacked direction of the stacked structure.
摘要翻译：根据本发明的一个方面的用于射频电路的压电膜谐振器包括衬底和设置在衬底上的多层膜。多层膜具有叠层结构，其中至少两个压电层和至少三个设置在它们之间的压电层之间的电极层被堆叠。至少一个电极层是用于激发的电极层。用于激发的电极层具有其中作为用于激发的电极层的元件的多个单元图案沿着与层叠结构的堆叠方向基本垂直的方向周期性地布置的结构。

7. 发明申请

US20050168102A1 Film bulk acoustic wave resonator, film bulk acoustic wave resonator filter and method of manufacturing film bulk acoustic wave resonator 审中-公开
标题翻译：薄膜体声波谐振器，薄膜体声波谐振滤波器及薄膜体声波谐振器的制造方法
公开(公告)号：US20050168102A1
公开(公告)日：2005-08-04
申请号：US10909335
申请日：2004-08-03
申请人： Hisanori Matsumoto , Kengo Asai , Atsushi Isobe , Mitsutaka Hikita
发明人： Hisanori Matsumoto , Kengo Asai , Atsushi Isobe , Mitsutaka Hikita
IPC分类号： H03H9/54 , H01L41/08 , H03H3/02 , H03H3/04 , H03H9/02 , H03H9/17 , H03H9/56 , H03H9/70
CPC分类号： H03H9/564 , H03H3/04 , H03H9/02157 , H03H9/174 , H03H9/568 , H03H2003/023 , H03H2003/0442 , H03H2003/0471
摘要： The present invention provides a film bulk acoustic wave resonator (FBAR) filter that can keep the Q factor high. The FBAR filter comprises a first FBAR with a first resonant frequency and a second FBAR with a second resonant frequency, formed on a same substrate. The FBAR filter has such a structure that a first underlayer is formed between the substrate and a first bottom electrode layer and a second underlayer is formed between the substrate and a second bottom electrode layer, the first underlayer thickness being different from the second underlayer thickness.
摘要翻译：本发明提供一种可以使Q因子保持高的薄膜体声波谐振器（FBAR）滤波器。 FBAR滤波器包括形成在同一衬底上的具有第一谐振频率的第一FBAR和具有第二谐振频率的第二FBAR。 FBAR滤光器具有在基板和第一底部电极层之间形成第一底层的结构，在基板和第二底部电极层之间形成第二下层，第一下层厚度与第二下层厚度不同。

8. 发明授权

US06879488B2 Radio frequency module 失效
标题翻译：射频模块
公开(公告)号：US06879488B2
公开(公告)日：2005-04-12
申请号：US10302813
申请日：2002-11-25
申请人： Eriko Takeda , Atsushi Isobe , Satoshi Tanaka , Hiroshi Okabe
发明人： Eriko Takeda , Atsushi Isobe , Satoshi Tanaka , Hiroshi Okabe
IPC分类号： H01L23/12 , H01L23/34 , H01L23/367 , H01L25/04 , H01L25/18 , H05K1/00 , H05K1/02 , H05K1/03 , H05H7/20
CPC分类号： H01L23/345 , H01L23/3677 , H01L24/73 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/73265 , H01L2924/15153 , H01L2924/15313 , H01L2924/16251 , H01L2924/19105 , H05K1/0201 , H05K1/0206 , H05K1/0298 , H05K1/0306 , H05K2201/062 , H01L2924/00012
摘要： In a compact radio frequency module, a first chip forms a heater element and a second chip forms a device whose operating characteristics vary with temperature change or whose maximum operating temperature is lower than the maximum operating temperature of the first chip. A multilayer substrate has a plurality of dielectric layers and a plurality of conductor layers and mechanically supports the firs chip and the second chip with some of the conductor layers electrically connected with these chips. The module can conduct the heat generated by the first chip throughout the module; guide the heat generated by the first chip from the module's top face side to its bottom face side; and interrupt the heat conduction from the first conductor pattern on which the first chip is placed to the second conductor pattern on which the second chip is placed.
摘要翻译：在紧凑型射频模块中，第一芯片形成加热元件，第二芯片形成其工作特性随温度变化而变化或其最大工作温度低于第一芯片的最大工作温度的器件。多层基板具有多个电介质层和多个导体层，并机械地支撑第一芯片和第二芯片，其中一些导体层与这些芯片电连接。该模块可以在整个模块中传导第一芯片产生的热量; 将第一芯片产生的热量从模块的顶面引导到其底面; 并且将来自第一芯片的第一导体图案的热传导中断到放置第二芯片的第二导体图案。

9. 发明授权

US06346761B1 Surface acoustic wave device capable of suppressing spurious response due to non-harmonic higher-order modes 失效
标题翻译：能够抑制由非谐波高阶模式引起的寄生响应的声表面波器件
公开(公告)号：US06346761B1
公开(公告)日：2002-02-12
申请号：US09492078
申请日：2000-01-27
申请人： Atsushi Isobe , Mitsutaka Hikita , Kengo Asai , Atsushi Sumioka
发明人： Atsushi Isobe , Mitsutaka Hikita , Kengo Asai , Atsushi Sumioka
IPC分类号： H01L4104
CPC分类号： H03H9/1452 , H03H9/02818
摘要： A surface acoustic wave device which includes a piezoelectric substrate, and an interdigital transducer formed on a planar surface of the piezoelectric substrate, and having first and second bus bars, a first plurality of electrode fingers connected to the first bus bar, and a second plurality of electrode fingers connected to the second bus bar. The first and second plurality of electrode fingers of the interdigital transducer have an electrode cross region in which the first and second plurality of electrode fingers are arranged alternatively. Each boundary between the first and second bus bars and a grating region of the first and second plurality of electrode fingers is arranged such that the boundary is not substantially parallel, with a transmission direction of surface acoustic waves excited by the interdigital transducer.
摘要翻译：一种表面声波装置，包括压电基片和形成在压电基片的平面上的叉指换能器，并具有第一和第二汇流条，连接到第一汇流条的第一多个电极指，以及第二多个的电极指连接到第二汇流条。叉指式换能器的第一和第二多个电极指具有交替布置第一和第二多个电极指的电极交叉区域。第一和第二母线之间的每个边界以及第一和第二多个电极指的光栅区域被布置成使得边界基本上不平行，并且由叉指换能器激发的表面声波的透射方向。

10. 发明授权

US5814917A Surface acoustic wave equipment 失效
标题翻译：表面声波设备
公开(公告)号：US5814917A
公开(公告)日：1998-09-29
申请号：US676683
申请日：1996-07-10
申请人： Atsushi Isobe , Mitsutaka Hikita , Chisaki Takubo , Kengo Asai
发明人： Atsushi Isobe , Mitsutaka Hikita , Chisaki Takubo , Kengo Asai
IPC分类号： H03H9/02 , H03H9/145 , H03H9/25 , H01L41/04
CPC分类号： H03H9/02559 , H03H9/14538
摘要： Aluminum is used for the interdigital transducer mounted on a piezoelectric substrate to realize a surface acoustic wave transducer having a small capacity ratio, no spurious resonance, and a low loss. A .theta. rotated Y cut lithium niobate single crystal piezoelectric substrate is used for the piezoelectric material, a metal film of which principal ingredient is aluminum is used for the interdigital transducer, the direction of the interdigital transducer is made parallel to the X-axis of the lithium niobate single crystal, and thick h and electrode pitch P of the interdigital transducer have the following relationship: (.theta.+5).sup.2 /300+11/12.ltoreq.h/P.times.100-8.ltoreq.-0.0001.times.(.theta.+5).sup.3 +0.1625.times.(.theta.+5)+5.5 and -30.ltoreq..theta..ltoreq.20.
摘要翻译：铝用于安装在压电基板上的叉指换能器，以实现具有小容量比，无杂散谐振和低损耗的表面声波换能器。使用θ旋转的Y切割的铌酸锂单晶压电基板用于压电材料，主要成分为铝的金属膜用于叉指式换能器，叉指式换能器的方向与X轴的X轴平行铌酸锂单晶，并且叉指换能器的厚h和电极间距P具有以下关系：（θ+5）2/300 + 11/12

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