专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US09250619B2 Systems and methods of automatic boundary control for semiconductor processes 有权
标题翻译：半导体工艺自动边界控制系统和方法
公开(公告)号：US09250619B2
公开(公告)日：2016-02-02
申请号：US13311601
申请日：2011-12-06
申请人： Chih-Wei Hsu , Mei-Jen Wu , Yen-Di Tsen , Jo Fei Wang , Jong-I Mou , Chin-Hsiang Lin
发明人： Chih-Wei Hsu , Mei-Jen Wu , Yen-Di Tsen , Jo Fei Wang , Jong-I Mou , Chin-Hsiang Lin
IPC分类号： G06F19/00 , G05B19/18 , H01L21/66
CPC分类号： G05B19/18 , G05B2219/45031 , H01L22/20
摘要： A system and method of automatically calculating boundaries for a semiconductor fabrication process. The method includes selecting a first parameter for monitoring during a semiconductor fabrication process. A first set of values for the first parameter are received and a group value of the first set is determined. Each value in the first set of values is normalized. A first weighting factor is selected based on a number of values in the first set. The embodiment also includes generating a first and a second boundary value as a function of the weighting factor, the first set normalized values and the group value of the first set and applying the first and second boundary values to control the semiconductor fabrication process.
摘要翻译：一种自动计算半导体制造工艺边界的系统和方法。该方法包括在半导体制造过程中选择用于监测的第一参数。接收第一参数的第一组值，并确定第一组的组值。第一组值中的每个值都被归一化。基于第一组中的值的数量来选择第一加权因子。该实施例还包括根据加权因子，第一集合归一化值和第一组的组值产生第一和第二边界值，并施加第一和第二边界值以控制半导体制造过程。

2. 发明授权

US08406904B2 Two-dimensional multi-products multi-tools advanced process control 有权
标题翻译：二维多产品多工具高级过程控制
公开(公告)号：US08406904B2
公开(公告)日：2013-03-26
申请号：US13033413
申请日：2011-02-23
申请人： Chih-Wei Hsu , Yen-Di Tsen , Jong-I Mou
发明人： Chih-Wei Hsu , Yen-Di Tsen , Jong-I Mou
IPC分类号： G05B13/02 , G06F19/00
CPC分类号： G05B19/41865 , G05B2219/32135 , G05B2219/32267 , G05B2219/45031 , Y02P90/20 , Y02P90/265
摘要： The present disclosure provides a method. The method includes gathering advanced process control (APC) data from a subset of available wafers and a subset of available processing chambers. The method includes establishing a matrix that contains a plurality of cells. The cells each correspond to one of the available wafers and one of the available processing chambers. The matrix is partially filled by populating cells for which the APC data has been gathered. The method includes determining a plurality of chamber-coverage-rate (CCR) parameters associated with the matrix. The method includes optimizing the CCR parameters through an iteration process to obtain optimized CCR parameters. The method includes predicting an APC data value for a designated cell of the matrix based on the optimized CCR parameters. The designated cell is an empty cell before the predicting and is populated by the predicting.
摘要翻译：本公开提供了一种方法。该方法包括从可用晶片的子集和可用处理室的子集中收集先进的过程控制（APC）数据。该方法包括建立包含多个单元的矩阵。每个单元对应于可用晶片之一和可用处理室之一。通过填充已经收集了APC数据的单元格来部分填充矩阵。该方法包括确定与矩阵相关联的多个腔室覆盖率（CCR）参数。该方法包括通过迭代过程优化CCR参数以获得优化的CCR参数。该方法包括基于优化的CCR参数预测矩阵的指定小区的APC数据值。指定的单元格是在预测之前的空单元格，并由预测填充。

3. 发明申请

US20120215337A1 TWO-DIMENSIONAL MULTI-PRODUCTS MULTI-TOOLS ADVANCED PROCESS CONTROL 有权
标题翻译：二维多产品多工具高级过程控制
公开(公告)号：US20120215337A1
公开(公告)日：2012-08-23
申请号：US13033413
申请日：2011-02-23
申请人： Chih-Wei Hsu , Yen-Di Tsen , Jong-I Mou
发明人： Chih-Wei Hsu , Yen-Di Tsen , Jong-I Mou
IPC分类号： G06F19/00
CPC分类号： G05B19/41865 , G05B2219/32135 , G05B2219/32267 , G05B2219/45031 , Y02P90/20 , Y02P90/265
摘要： The present disclosure provides a method. The method includes gathering advanced process control (APC) data from a subset of available wafers and a subset of available processing chambers. The method includes establishing a matrix that contains a plurality of cells. The cells each correspond to one of the available wafers and one of the available processing chambers. The matrix is partially filled by populating cells for which the APC data has been gathered. The method includes determining a plurality of chamber-coverage-rate (CCR) parameters associated with the matrix. The method includes optimizing the CCR parameters through an iteration process to obtain optimized CCR parameters. The method includes predicting an APC data value for a designated cell of the matrix based on the optimized CCR parameters. The designated cell is an empty cell before the predicting and is populated by the predicting.
摘要翻译：本公开提供了一种方法。该方法包括从可用晶片的子集和可用处理室的子集中收集先进的过程控制（APC）数据。该方法包括建立包含多个单元的矩阵。每个单元对应于可用晶片之一和可用处理室之一。通过填充已经收集了APC数据的单元格来部分填充矩阵。该方法包括确定与矩阵相关联的多个腔室覆盖率（CCR）参数。该方法包括通过迭代过程优化CCR参数以获得优化的CCR参数。该方法包括基于优化的CCR参数预测矩阵的指定小区的APC数据值。指定的单元格是在预测之前的空单元格，并由预测填充。

4. 发明授权

US08239056B2 Advanced process control for new tapeout product 有权
标题翻译：新的流片产品的高级过程控制
公开(公告)号：US08239056B2
公开(公告)日：2012-08-07
申请号：US12616681
申请日：2009-11-11
申请人： Chih-Wei Hsu , Yu-Jen Cheng , Wen-Pin Liu , Shun-Ping Wang , Shin-Rung Lu , Jo Fei Wang , Jong-I Mou , Andy Tsen , Chun-Hsien Lin
发明人： Chih-Wei Hsu , Yu-Jen Cheng , Wen-Pin Liu , Shun-Ping Wang , Shin-Rung Lu , Jo Fei Wang , Jong-I Mou , Andy Tsen , Chun-Hsien Lin
IPC分类号： G06F19/00
CPC分类号： H01L21/67253 , G05B19/41865 , H01L21/67276 , Y02P90/20
摘要： The present disclosure provides a semiconductor manufacturing method. The method includes providing product data of a product, the product data including a sensitive product parameter; searching existing products according to the sensitive product parameter to identify a relevant product from the existing products; determining an initial value of a processing model parameter to the product using corresponding data of the relevant product; assigning the initial value of the processing model parameter to a processing model associated with a manufacturing process; thereafter, tuning a processing recipe using the processing model; and performing the manufacturing process to a semiconductor wafer using the processing recipe.
摘要翻译：本发明提供一种半导体制造方法。该方法包括提供产品的产品数据，产品数据包括敏感产品参数; 根据敏感产品参数搜索现有产品，从现有产品中识别相关产品; 使用相关产品的相应数据确定产品的处理模型参数的初始值; 将处理模型参数的初始值分配给与制造过程相关联的处理模型; 此后，使用该处理模型调整处理配方; 以及使用所述处理配方对所述半导体晶片进行制造处理。

5. 发明申请

US20110112678A1 ADVANCED PROCESS CONTROL FOR NEW TAPEOUT PRODUCT 有权
标题翻译：新型贴片产品的先进工艺控制
公开(公告)号：US20110112678A1
公开(公告)日：2011-05-12
申请号：US12616681
申请日：2009-11-11
申请人： Chih-Wei Hsu , Yu-Jen Cheng , Wen-Pin Liu , Shun-Ping Wang , Shin-Rung Lu , Jo Fei Wang , Jong-I Mou , Andy Tsen , Chun-Hsien Lin
发明人： Chih-Wei Hsu , Yu-Jen Cheng , Wen-Pin Liu , Shun-Ping Wang , Shin-Rung Lu , Jo Fei Wang , Jong-I Mou , Andy Tsen , Chun-Hsien Lin
IPC分类号： G06F17/50
CPC分类号： H01L21/67253 , G05B19/41865 , H01L21/67276 , Y02P90/20
摘要： The present disclosure provides a semiconductor manufacturing method. The method includes providing product data of a product, the product data including a sensitive product parameter; searching existing products according to the sensitive product parameter to identify a relevant product from the existing products; determining an initial value of a processing model parameter to the product using corresponding data of the relevant product; assigning the initial value of the processing model parameter to a processing model associated with a manufacturing process; thereafter, tuning a processing recipe using the processing model; and performing the manufacturing process to a semiconductor wafer using the processing recipe.
摘要翻译：本发明提供一种半导体制造方法。该方法包括提供产品的产品数据，产品数据包括敏感产品参数; 根据敏感产品参数搜索现有产品，从现有产品中识别相关产品; 使用相关产品的相应数据确定产品的处理模型参数的初始值; 将处理模型参数的初始值分配给与制造过程相关联的处理模型; 此后，使用该处理模型调整处理配方; 以及使用所述处理配方对所述半导体晶片进行制造处理。

6. 发明申请

US20110238197A1 DYNAMIC COMPENSATION IN ADVANCED PROCESS CONTROL 有权
标题翻译：高级过程控制中的动态补偿
公开(公告)号：US20110238197A1
公开(公告)日：2011-09-29
申请号：US12731348
申请日：2010-03-25
申请人： Chih-Wei Hsu , Jin-Ning Sung , Shin-Rung Lu , Jong-I Mou
发明人： Chih-Wei Hsu , Jin-Ning Sung , Shin-Rung Lu , Jong-I Mou
IPC分类号： G05B13/04 , G06F17/00
CPC分类号： G05B19/41875 , G05B2219/32017 , G05B2219/32189 , G05B2219/45031 , Y02P90/22
摘要： A method of semiconductor fabrication is provided. The method includes providing a model for a device parameter of a wafer as a function of first and second process parameters. The first and second process parameters correspond to different wafer characteristics, respectively. The method includes deriving target values of the first and second process parameters based on a specified target value of the device parameter. The method includes performing a first fabrication process in response to the target value of the first process parameter. The method includes measuring an actual value of the first process parameter thereafter. The method includes updating the model using the actual value of the first process parameter. The method includes deriving a revised target value of the second process parameter using the updated model. The method includes performing a second fabrication process in response to the revised target value of the second process parameter.
摘要翻译：提供了一种半导体制造方法。该方法包括提供晶片的器件参数的模型作为第一和第二工艺参数的函数。第一和第二工艺参数分别对应于不同的晶片特性。该方法包括基于设备参数的指定目标值导出第一和第二处理参数的目标值。该方法包括响应于第一过程参数的目标值执行第一制造过程。该方法包括此后测量第一处理参数的实际值。该方法包括使用第一过程参数的实际值更新模型。该方法包括使用更新的模型导出第二过程参数的修正目标值。该方法包括响应于修改的第二过程参数的目标值执行第二制造过程。

7. 发明授权

US08229588B2 Method and system for tuning advanced process control parameters 有权
标题翻译：调整高级过程控制参数的方法和系统
公开(公告)号：US08229588B2
公开(公告)日：2012-07-24
申请号：US12396996
申请日：2009-03-03
申请人： Andy Tsen , Chih-Wei Hsu , Ming-Yeon Hung , Ming-Yu Fan , Wang Jo Fei , Jong-I Mou
发明人： Andy Tsen , Chih-Wei Hsu , Ming-Yeon Hung , Ming-Yu Fan , Wang Jo Fei , Jong-I Mou
IPC分类号： G06F19/00
CPC分类号： H01L21/67276 , G05B13/044
摘要： A method of advanced process control (APC) for semiconductor fabrication is provided. The method includes providing a present wafer to be processed by a semiconductor processing tool, providing first data of previous wafers that have been processed by the semiconductor processing tool, decoupling noise from the first data to generate second data, evaluating an APC performance based on proximity of the second data to a target data, determining a control parameter based on the APC performance, and controlling the semiconductor processing tool with the control parameter to process the present wafer.
摘要翻译：提供了一种用于半导体制造的先进工艺控制（APC）的方法。该方法包括提供将由半导体处理工具处理的当前晶片，提供由半导体处理工具处理的先前晶片的第一数据，从第一数据解耦噪声以产生第二数据，基于接近度来评估APC性能的第二数据提供给目标数据，基于APC性能确定控制参数，并且利用控制参数来控制半导体处理工具来处理本晶片。

8. 发明申请

US20100228370A1 METHOD AND SYSTEM FOR TUNING ADVANCED PROCESS CONTROL PARAMETERS 有权
标题翻译：用于调谐高级过程控制参数的方法和系统
公开(公告)号：US20100228370A1
公开(公告)日：2010-09-09
申请号：US12396996
申请日：2009-03-03
申请人： Andy Tsen , Chih-Wei Hsu , Ming-Yeon Hung , Ming-Yu Fan , Wang Jo Fei , Jong-I Mou
发明人： Andy Tsen , Chih-Wei Hsu , Ming-Yeon Hung , Ming-Yu Fan , Wang Jo Fei , Jong-I Mou
IPC分类号： G05B13/04 , G06F17/10
CPC分类号： H01L21/67276 , G05B13/044
摘要： A method of advanced process control (APC) for semiconductor fabrication is provided. The method includes providing a present wafer to be processed by a semiconductor processing tool, providing first data of previous wafers that have been processed by the semiconductor processing tool, decoupling noise from the first data to generate second data, evaluating an APC performance based on proximity of the second data to a target data, determining a control parameter based on the APC performance, and controlling the semiconductor processing tool with the control parameter to process the present wafer.
摘要翻译：提供了一种用于半导体制造的先进工艺控制（APC）的方法。该方法包括提供将由半导体处理工具处理的当前晶片，提供由半导体处理工具处理的先前晶片的第一数据，从第一数据解耦噪声以产生第二数据，基于接近度来评估APC性能的第二数据提供给目标数据，基于APC性能确定控制参数，并且利用控制参数来控制半导体处理工具来处理本晶片。

9. 发明授权

US09477219B2 Dynamic compensation in advanced process control 有权
标题翻译：高级过程控制中的动态补偿
公开(公告)号：US09477219B2
公开(公告)日：2016-10-25
申请号：US12731348
申请日：2010-03-25
申请人： Chih-Wei Hsu , Jin-Ning Sung , Shin-Rung Lu , Jong-I Mou
发明人： Chih-Wei Hsu , Jin-Ning Sung , Shin-Rung Lu , Jong-I Mou
IPC分类号： G05B19/418
CPC分类号： G05B19/41875 , G05B2219/32017 , G05B2219/32189 , G05B2219/45031 , Y02P90/22
摘要： A method of semiconductor fabrication is provided. The method includes providing a model for a device parameter of a wafer as a function of first and second process parameters. The first and second process parameters correspond to different wafer characteristics, respectively. The method includes deriving target values of the first and second process parameters based on a specified target value of the device parameter. The method includes performing a first fabrication process in response to the target value of the first process parameter. The method includes measuring an actual value of the first process parameter thereafter. The method includes updating the model using the actual value of the first process parameter. The method includes deriving a revised target value of the second process parameter using the updated model. The method includes performing a second fabrication process in response to the revised target value of the second process parameter.
摘要翻译：提供了一种半导体制造方法。该方法包括提供晶片的器件参数的模型作为第一和第二工艺参数的函数。第一和第二工艺参数分别对应于不同的晶片特性。该方法包括基于设备参数的指定目标值导出第一和第二处理参数的目标值。该方法包括响应于第一过程参数的目标值执行第一制造过程。该方法包括此后测量第一处理参数的实际值。该方法包括使用第一过程参数的实际值更新模型。该方法包括使用更新的模型导出第二过程参数的修正目标值。该方法包括响应于修改的第二过程参数的目标值执行第二制造过程。

10. 发明授权

US09142876B2 Planar antenna and handheld device 有权
标题翻译：平面天线和手持设备
公开(公告)号：US09142876B2
公开(公告)日：2015-09-22
申请号：US13041435
申请日：2011-03-07
申请人： Min-Che Chen , Chia-I Lin , Chih-Wei Hsu
发明人： Min-Che Chen , Chia-I Lin , Chih-Wei Hsu
IPC分类号： H01Q1/24 , H01Q1/52 , H01Q9/42 , H01Q21/28 , H01Q5/10
CPC分类号： H01Q1/243 , H01Q1/521 , H01Q5/10 , H01Q9/42 , H01Q21/28
摘要： A planar antenna and a handheld device are provided. The handheld device includes the planar antenna and a system ground plane. The planar antenna has a first feed point, a first ground point, a second feed point, and a second ground point. The first ground point and the second ground point are located between the first feed point and the second feed point. The system ground plane is electrically connected to the first feed point, the first ground point, the second feed point, and the second ground point. Thereby, the performance in radio signal transceiving is improved.
摘要翻译：提供平面天线和手持设备。手持设备包括平面天线和系统接地平面。平面天线具有第一馈电点，第一接地点，第二馈电点和第二接地点。第一接地点和第二接地点位于第一馈电点和第二馈电点之间。系统接地层电连接到第一馈电点，第一接地点，第二馈电点和第二接地点。从而提高了无线电信号收发的性能。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式