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1. 发明授权

US07601600B2 Power semiconductor device and method for manufacturing the same 失效
标题翻译：功率半导体器件及其制造方法
公开(公告)号：US07601600B2
公开(公告)日：2009-10-13
申请号：US11590373
申请日：2006-10-30
申请人： Choul Joo Ko , Nam Joo Kim
发明人： Choul Joo Ko , Nam Joo Kim
IPC分类号： H01L29/76
CPC分类号： H01L27/0629 , H01L29/1083 , H01L29/404 , H01L29/42368 , H01L29/7831 , H01L29/7835
摘要： Disclosed are a power semiconductor device and a method for manufacturing the same. The power semiconductor device has a PIP capacitor and an LDMOS transistor, the LDMOS transistor having second and third gate electrodes separate from a first gate electrode, which may be formed in the process of forming the upper electrode of the PIP capacitor, so it is possible to realize an LDMOS having a higher breakdown voltage and lower Ron and Rsp without additional processing. A drain voltage, which may be different from a voltage applied to the first gate electrode, may be applied to the third gate electrode, so it is possible to realize an LDMOS having a high breakdown voltage and low Ron and Rsp.
摘要翻译：公开了功率半导体器件及其制造方法。功率半导体器件具有PIP电容器和LDMOS晶体管，LDMOS晶体管具有与形成PIP电容器的上电极的过程中形成的第二和第三栅电极分离的第一和第三栅电极，因此可能实现具有更高击穿电压的LDMOS和较低的Ron和Rsp，而无需额外的处理。可以将不同于施加到第一栅电极的电压的漏极电压施加到第三栅电极，因此可以实现具有高击穿电压和低Ron和Rsp的LDMOS。

2. 发明授权

US07563667B2 Method for fabricating semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US07563667B2
公开(公告)日：2009-07-21
申请号：US12002241
申请日：2007-12-13
申请人： Choul Joo Ko , Yong Jun Lee
发明人： Choul Joo Ko , Yong Jun Lee
IPC分类号： H01L21/8234 , H01L21/8244 , H01L21/8242 , H01L21/336
CPC分类号： H01L27/0629 , H01L28/40
摘要： In a method for forming a semiconductor device, a device isolation layer is formed in a capacitor region of a silicon substrate, and a bottom electrode and a dielectric layer are formed on the device isolation layer. Insulation sidewalls are formed on both sides of the bottom electrode. A top electrode is formed on the dielectric layer, and simultaneously a gate electrode is formed in a transistor region of the silicon substrate. Source/drain impurity regions are formed in the silicon substrate at both sides of the gate electrode.
摘要翻译：在形成半导体器件的方法中，在硅衬底的电容器区域中形成器件隔离层，并且在器件隔离层上形成底电极和电介质层。绝缘侧壁形成在底部电极的两侧。在电介质层上形成顶部电极，同时在硅衬底的晶体管区域形成栅电极。源极/漏极杂质区域形成在栅极电极两侧的硅衬底中。

3. 发明申请

US20080176370A1 Method for fabricating semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20080176370A1
公开(公告)日：2008-07-24
申请号：US12002241
申请日：2007-12-13
申请人： Choul Joo Ko , Yong Jun Lee
发明人： Choul Joo Ko , Yong Jun Lee
IPC分类号： H01L21/76
CPC分类号： H01L27/0629 , H01L28/40
摘要： In a method for forming a semiconductor device, a device isolation layer is formed in a capacitor region of a silicon substrate, and a bottom electrode and a dielectric layer are formed on the device isolation layer. Insulation sidewalls are formed on both sides of the bottom electrode. A top electrode is formed on the dielectric layer, and simultaneously a gate electrode is formed in a transistor region of the silicon substrate. Source/drain impurity regions are formed in the silicon substrate at both sides of the gate electrode.
摘要翻译：在形成半导体器件的方法中，在硅衬底的电容器区域中形成器件隔离层，在器件隔离层上形成底部电极和电介质层。绝缘侧壁形成在底部电极的两侧。在电介质层上形成顶部电极，同时在硅衬底的晶体管区域中形成栅电极。源极/漏极杂质区域形成在栅极电极两侧的硅衬底中。

4. 发明授权

US08754474B2 LDMOS semiconductor device having guardring region disposed at side of well region 有权
标题翻译： LDMOS半导体器件具有设置在阱区一侧的防护区域
公开(公告)号：US08754474B2
公开(公告)日：2014-06-17
申请号：US13089005
申请日：2011-04-18
申请人： Choul Joo Ko
发明人： Choul Joo Ko
IPC分类号： H01L29/66
CPC分类号： H01L29/7816 , H01L21/76202 , H01L21/765 , H01L21/823456 , H01L21/823481 , H01L21/823493 , H01L29/0619 , H01L29/1083
摘要： A Lateral Double Diffused Metal-Oxide-Semiconductor (LDMOS) semiconductor device includes a substrate; a gate region, a source region, and a drain region on and/or over the substrate, a well region at one side of the drain region, and a guardring region disposed at one side of the well region and connected electrically to the well region.
摘要翻译：横向双扩散金属氧化物半导体（LDMOS）半导体器件包括衬底; 在衬底上和/或上方的栅极区域，源极区域和漏极区域，漏极区域一侧的阱区域和设置在阱区域一侧的保护区域，并且电连接到阱区域。

5. 发明申请

US20130168766A1 DRAIN EXTENDED MOS TRANSISTOR AND METHOD FOR FABRICATING THE SAME 有权
标题翻译：漏极扩展MOS晶体管及其制造方法
公开(公告)号：US20130168766A1
公开(公告)日：2013-07-04
申请号：US13543252
申请日：2012-07-06
申请人： Hee Bae LEE , Choul Joo Ko
发明人： Hee Bae LEE , Choul Joo Ko
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L29/1083 , H01L21/266 , H01L29/66659 , H01L29/7835
摘要： A drain extended MOS (DEMOS) transistor including at least one of: (1) A p-type epitaxial layer grown over an n-type semiconductor substrate. (2) An n-type well formed in a portion of the epitaxial layer. (3) A p-type drift region formed in another portion of the epitaxial layer. (4) A p-type source region formed in the well. (5) A p-type drain region formed in the drift region and spaced apart from the source region inside the epitaxial layer. (6) An n-type channel region extending between the drift region and the source region. (7) A gate structure formed over the channel region. (8) An n-type buried layer having a contact surface with the well and the drift region and formed in the epitaxial layer. A region of the buried layer has surface contact with the drift region and has a relatively low dopant concentration compared to other regions.
摘要翻译：一种漏极扩展MOS（DEMOS）晶体管，包括以下中的至少一个：（1）在n型半导体衬底上生长的p型外延层。（2）在外延层的一部分中形成的n型阱。（3）形成在外延层的另一部分中的p型漂移区。（4）在井中形成的p型源区。（5）形成在漂移区中并与外延层内的源极区隔开的p型漏极区。（6）在漂移区域和源极区域之间延伸的n型沟道区域。（7）形成在通道区域上的栅极结构。（8）具有与阱和漂移区的接触面并形成在外延层中的n型掩埋层。掩埋层的区域与漂移区域具有表面接触，并且与其它区域相比具有相对较低的掺杂剂浓度。

6. 发明授权

US07910466B2 Method of manufacturing high-voltage semiconductor device and low-voltage semiconductor device 有权
标题翻译：制造高压半导体器件和低压半导体器件的方法
公开(公告)号：US07910466B2
公开(公告)日：2011-03-22
申请号：US11645657
申请日：2006-12-27
申请人： Choul Joo Ko
发明人： Choul Joo Ko
IPC分类号： H01L21/425
CPC分类号： H01L29/78 , H01L21/823412 , H01L21/823493
摘要： A high-voltage semiconductor device and a method for making the same are provided. A high-voltage semiconductor device and a low-voltage semiconductor device are formed in a single substrate, a photolithography process that is required to form a high-voltage well region is omitted, and the well region of the high-voltage semiconductor is formed together with the well region of the low-voltage semiconductor device formed in another photolithography process.
摘要翻译：提供一种高压半导体器件及其制造方法。在单个基板上形成高电压半导体器件和低电压半导体器件，省略了形成高电压阱区域所需的光刻工艺，并且高电压半导体的阱区域形成在一起其中在另一光刻工艺中形成低电压半导体器件的阱区。

7. 发明申请

US20130082327A1 SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体器件
公开(公告)号：US20130082327A1
公开(公告)日：2013-04-04
申请号：US13252284
申请日：2011-10-04
申请人： Cheol Ho CHO , Choul Joo Ko
发明人： Cheol Ho CHO , Choul Joo Ko
IPC分类号： H01L29/78
CPC分类号： H01L29/0847 , H01L29/1083 , H01L29/42368 , H01L29/66659 , H01L29/7835
摘要： A semiconductor device including a first conductive epitaxial layer, a second conductive type first well provided in the first conductive epitaxial layer, a first conductive body provided in the first conductive epitaxial layer, a second conductive type drain extension region provided in the first conductive epitaxial layer and interposed between the first conductive body and the second conductive type first well, a second conductive type second well provided in the second conductive type first well, and a gate provided in the first conductive epitaxial layer.
摘要翻译：一种半导体器件，包括第一导电外延层，设置在第一导电外延层中的第二导电类型第一阱，设置在第一导电外延层中的第一导电体，设置在第一导电外延层中的第二导电型漏极延伸区并且介于所述第一导电体和所述第二导电型第一阱之间，设置在所述第二导电型第一阱中的第二导电型第二阱以及设置在所述第一导电外延层中的栅极。

8. 发明授权

US08227871B2 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08227871B2
公开(公告)日：2012-07-24
申请号：US12631308
申请日：2009-12-04
申请人： Choul Joo Ko
发明人： Choul Joo Ko
IPC分类号： H01L27/092 , H01L29/76
CPC分类号： H01L29/7816 , H01L29/0619 , H01L29/0878 , H01L29/42368 , H01L29/66681 , H01L29/7817 , H01L29/7818
摘要： A semiconductor device and a method for manufacturing the same are disclosed. The semiconductor device includes a substrate having a first conductor-type, a buried layer of a second conductor-type on the substrate, a drain, and a first guard-ring on one side of the drain, a second guard-ring on one side of the first guard-ring, and a third guard-ring on one side of the second guard-ring.
摘要翻译：公开了一种半导体器件及其制造方法。半导体器件包括：衬底，其具有第一导体类型，衬底上第二导体类型的掩埋层，漏极和漏极一侧的第一保护环，一侧上的第二保护环并且在第二保护环的一侧具有第三保护环。

9. 发明授权

US07687363B2 Method for manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US07687363B2
公开(公告)日：2010-03-30
申请号：US11639928
申请日：2006-12-15
申请人： Choul Joo Ko
发明人： Choul Joo Ko
IPC分类号： H01L21/336
CPC分类号： H01L29/6656 , H01L29/665 , H01L29/6659 , H01L29/7836
摘要： Disclosed is a method of manufacturing a semiconductor device, which includes the steps of: forming a high-voltage well region (e.g., by implanting impurity ions into a semiconductor substrate and then annealing); forming an isolation layer on the semiconductor substrate; implanting impurity ions into the high-voltage well region, thereby forming a low-voltage well region within the high-voltage well region; forming a gate electrode on the semiconductor substrate; and implanting impurity ions using the gate electrode as a mask, thereby forming source/drain regions within the low-voltage well region.
摘要翻译：公开了一种制造半导体器件的方法，其包括以下步骤：形成高电压阱区（例如，通过将杂质离子注入到半导体衬底中然后退火）; 在所述半导体衬底上形成隔离层; 将杂质离子注入高电压阱区，从而在高电压阱区内形成低电压阱区; 在半导体衬底上形成栅电极; 以及使用栅极电极作为掩模注入杂质离子，从而在低电压阱区域内形成源极/漏极区域。

10. 发明授权

US09048132B2 Lateral double diffused metal oxide semiconductor device and method for manufacturing the same 有权
标题翻译：横向双扩散金属氧化物半导体器件及其制造方法
公开(公告)号：US09048132B2
公开(公告)日：2015-06-02
申请号：US13476583
申请日：2012-05-21
申请人： Choul Joo Ko
发明人： Choul Joo Ko
IPC分类号： H01L29/66 , H01L29/10 , H01L29/78 , H01L29/423 , H01L29/08
CPC分类号： H01L29/1083 , H01L29/0847 , H01L29/1087 , H01L29/42368 , H01L29/66659 , H01L29/7835
摘要： An LDMOS device includes a second conduction type buried layer, a first conduction type drain extension region configured to be formed on and/or over a region of the second conduction type buried layer, a second conduction type drain extension region configured to be formed in a partial region of the first conduction type drain extension region, a first conduction type body, a first guard ring configured to be formed around the second conduction type drain extension region and configured to include a second conduction type impurity layer, and a second guard ring configured to be formed around the first guard ring and configured to include a high-voltage second conduction type well and a second conduction type impurity layer. Further, the second conduction type impurity layer of the first guard ring and the second conduction type impurity layer of the second guard ring operate as an isolation.
摘要翻译： LDMOS器件包括第二导电型掩埋层，被配置为形成在第二导电型掩埋层的区域上和/或之上的第一导电型漏极延伸区域，被配置为形成在第二导电型漏极延伸区域中的第二导电型漏极延伸区域第一导电型漏极延伸区域的部分区域，第一导电型体，被配置为围绕第二导电类型漏极延伸区域形成并被构造为包括第二导电类型杂质层的第一保护环和被配置为包括第二导电型漏极延伸区域的第二保护环形成在第一保护环周围并被构造成包括高压第二导电型阱和第二导电类型杂质层。此外，第一保护环的第二导电类型杂质层和第二保护环的第二导电类型杂质层作为隔离来操作。

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