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1. 发明申请

US20060250843A1 Non-volatile-shadow latch using a nanotube switch 有权
标题翻译：使用纳米管开关的非易失性阴影锁存器
公开(公告)号：US20060250843A1
公开(公告)日：2006-11-09
申请号：US11280599
申请日：2005-11-15
申请人： Claude Bertin , Frank Guo , Thomas Rueckes , Steven Konsek , Mitchell Meinhold , Max Strasburg , Ramesh Sivarajan , X.M. Huang
发明人： Claude Bertin , Frank Guo , Thomas Rueckes , Steven Konsek , Mitchell Meinhold , Max Strasburg , Ramesh Sivarajan , X.M. Huang
IPC分类号： G11C14/00
CPC分类号： G11C13/025 , B82Y10/00 , G11C13/0033 , G11C14/00 , Y10S977/943
摘要： A non-volatile memory cell includes a volatile storage device that stores a corresponding logic state in response to electrical stimulus; and a shadow memory device coupled to the volatile storage device. The shadow memory device receives and stores the corresponding logic state in response to electrical stimulus. The shadow memory device includes a non-volatile nanotube switch that stores the corresponding state of the shadow device.
摘要翻译：非易失性存储单元包括：易失性存储装置，其响应于电刺激而存储对应的逻辑状态; 以及耦合到所述易失性存储装置的影子存储装置。影子存储装置响应于电刺激而接收和存储对应的逻辑状态。影子存储装置包括存储影子装置的相应状态的非易失性纳米管开关。

2. 发明申请

US20060250856A1 Memory arrays using nanotube articles with reprogrammable resistance 有权
公开(公告)号：US20060250856A1
公开(公告)日：2006-11-09
申请号：US11274967
申请日：2005-11-15
申请人： Claude Bertin , Frank Guo , Thomas Rueckes , Steven Konsek , Mitchell Meinhold , Max Strasburg , Ramesh Sivarajan , X. M. Huang
发明人： Claude Bertin , Frank Guo , Thomas Rueckes , Steven Konsek , Mitchell Meinhold , Max Strasburg , Ramesh Sivarajan , X. M. Huang
IPC分类号： G11C7/10
CPC分类号： G11C13/025 , B82Y10/00 , G11C13/0002 , G11C2213/16 , G11C2213/19 , G11C2213/35 , G11C2213/79
摘要： A memory array includes a plurality of memory cells, each of which receives a bit line, a first word line, and a second word line. Each memory cell includes a cell selection circuit, which allows the memory cell to be selected. Each memory cell also includes a two-terminal switching device, which includes first and second conductive terminals in electrical communication with a nanotube article. The memory array also includes a memory operation circuit, which is operably coupled to the bit line, the first word line, and the second word line of each cell. The circuit can select the cell by activating an appropriate line, and can apply appropriate electrical stimuli to an appropriate line to reprogrammably change the relative resistance of the nanotube article between the first and second terminals. The relative resistance corresponds to an informational state of the memory cell.

3. 发明申请

US20080012047A1 Two-terminal nanotube devices and systems and methods of making same 有权
标题翻译：两端纳米管装置及其制造方法
公开(公告)号：US20080012047A1
公开(公告)日：2008-01-17
申请号：US11280786
申请日：2005-11-15
申请人： Claude Bertin , Mitchell Meinhold , Steven Konsek , Thomas Ruckes , Max Strasburg , Frank Guo , X. M. Huang , Ramesh Sivarajan
发明人： Claude Bertin , Mitchell Meinhold , Steven Konsek , Thomas Ruckes , Max Strasburg , Frank Guo , X. M. Huang , Ramesh Sivarajan
IPC分类号： H01L29/76 , H01L29/745
CPC分类号： H01L27/112 , B82Y10/00 , G11C13/0002 , G11C13/025 , G11C17/16 , G11C17/165 , G11C2213/19 , G11C2213/77 , G11C2213/79 , H01L27/1052 , Y10S977/943
摘要： A two terminal switching device includes first and second conductive terminals and a nanotube article. The article has at least one nanotube, and overlaps at least a portion of each of the first and second terminals. The device also includes a stimulus circuit in electrical communication with at least one of the first and second terminals. The circuit is capable of applying first and second electrical stimuli to at least one of the first and second terminal(s) to change the relative resistance of the device between the first and second terminals between a relatively high resistance and a relatively low resistance. The relatively high resistance between the first and second terminals corresponds to a first state of the device, and the relatively low resistance between the first and second terminals corresponds to a second state of the device.
摘要翻译：二端开关器件包括第一和第二导电端子和纳米管制品。该制品具有至少一个纳米管，并且与第一和第二端子中的每一个的至少一部分重叠。该装置还包括与第一和第二端子中的至少一个电连通的激励电路。电路能够将第一和第二电刺激施加到第一和第二端子中的至少一个，以在相对较高电阻和相对较低电阻之间改变第一和第二端子之间的器件的相对电阻。第一和第二端子之间的相对高的电阻对应于器件的第一状态，并且第一和第二端子之间的相对较低的电阻对应于器件的第二状态。

4. 发明申请

US20060183278A1 Field effect device having a channel of nanofabric and methods of making same 有权
公开(公告)号：US20060183278A1
公开(公告)日：2006-08-17
申请号：US11332529
申请日：2006-01-13
申请人： Claude Bertin , Mitchell Meinhold , Steven Konsek , Thomas Rueckes , Frank Guo
发明人： Claude Bertin , Mitchell Meinhold , Steven Konsek , Thomas Rueckes , Frank Guo
IPC分类号： H01L21/8234 , H01L29/76
CPC分类号： B82Y10/00 , H01L21/823807 , H01L51/0048 , H01L51/0052 , H01L51/0508 , H01L51/0541
摘要： Field effect devices having channels of nanofabric and methods of making same. A nanotube field effect transistor is made to have a substrate, and a drain region and a source region in spaced relation relative to each other. A channel region is formed from a fabric of nanotubes, in which the nanotubes of the channel region are substantially all of the same semiconducting type of nanotubes. At least one gate is formed in proximity to the channel region so that the gate may be used to modulate the conductivity of the channel region so that a conductive path may be formed between the drain and source region. Forming a channel region includes forming a fabric of nanotubes in which the fabric has both semiconducting and metallic nanotubes and the fabric is processed to remove substantially all of the metallic nanotubes.

5. 发明申请

US20060237857A1 Hybrid carbon nanotube FET(CNFET)-FET static RAM (SRAM) and method of making same 有权
标题翻译：混合碳纳米管FET（CNFET）-FET静态RAM（SRAM）及其制造方法
公开(公告)号：US20060237857A1
公开(公告)日：2006-10-26
申请号：US11332080
申请日：2006-01-13
申请人： Claude Bertin , Mitchell Meinhold , Steven Konsek , Thomas Rueckes , Frank Guo
发明人： Claude Bertin , Mitchell Meinhold , Steven Konsek , Thomas Rueckes , Frank Guo
IPC分类号： H01L27/11
CPC分类号： G11C13/0033 , B82Y10/00 , G11C11/412 , G11C13/025 , G11C2213/17 , H01L27/0688 , H01L27/11 , H01L27/1104 , H01L27/1108 , H01L27/283 , H01L51/0048 , H01L51/0516 , H01L51/0545 , Y10S257/903 , Y10S977/762 , Y10S977/938
摘要： Hybrid carbon nanotube FET (CNFET), static ram (SRAM) and method of making same. A static ram memory cell has two cross-coupled semiconductor-type field effect transistors (FETs) and two nanotube FETs (NTFETs), each having a channel region made of at least one semiconductive nanotube, a first NTFET connected to the drain or source of the first semiconductor-type FET and the second NTFET connected to the drain or source of the second semiconductor-type FET.
摘要翻译：混合碳纳米管FET（CNFET），静态RAM（SRAM）及其制造方法。静态柱式存储单元具有两个交叉耦合半导体型场效应晶体管（FET）和两个纳米管FET（NTFET），每个具有由至少一个半导体纳米管制成的沟道区域，第一NTFET连接到漏极或源极连接到第二半导体型FET的漏极或源极的第一半导体型FET和第二NTFET。

6. 发明申请

US20050056866A1 Circuit arrays having cells with combinations of transistors and nanotube switching elements 有权
公开(公告)号：US20050056866A1
公开(公告)日：2005-03-17
申请号：US10864681
申请日：2004-06-09
申请人： Claude Bertin , Thomas Rueckes , Brent Segal , Frank Guo
发明人： Claude Bertin , Thomas Rueckes , Brent Segal , Frank Guo
IPC分类号： G11C7/06 , G11C8/02 , G11C11/00 , G11C11/50 , G11C13/02 , G11C16/02 , G11C16/04 , G11C17/16 , G11C23/00 , H01H59/00 , H01J1/62 , H01L20060101 , H01L21/336 , H01L21/82 , H01L21/8246 , H01L27/112 , H01L27/115 , H01L27/28 , H01L29/06 , H01L29/423 , H01L29/739 , H01L29/745 , H01L29/76 , H01L51/00 , H01L51/05 , H01L51/30 , H03K17/16
CPC分类号： H01L29/78 , B82Y10/00 , B82Y99/00 , G11C7/065 , G11C13/025 , G11C16/0416 , G11C17/16 , G11C17/165 , G11C23/00 , G11C2213/16 , G11C2213/17 , G11C2213/79 , H01H1/0094 , H01L27/10 , H01L27/1052 , H01L27/112 , H01L27/11206 , H01L27/115 , H01L27/286 , H01L29/0665 , H01L29/0673 , H01L29/42324 , H01L51/0048 , H01L51/0052 , H01L51/0508 , Y10S977/708 , Y10S977/724 , Y10S977/742 , Y10S977/762 , Y10S977/936 , Y10S977/938 , Y10S977/94 , Y10S977/943
摘要： Circuit arrays having cells with combinations of transistors and nanotube switches. Under one embodiment, a circuit array includes a plurality of cells arranged in an organization of words, each word having a plurality of bits. Each cell is responsive to a bit line, word line, reference line, and release line. Bit lines are arranged orthogonally relative to word lines and each word line and bit line are shared among a plurality of cells. Each cell is selectable via the activation of the bit line and word line. Each cell includes a field effect transistor coupled to a nanotube switching element. The nanotube switching element is switchable to at least two physical positions at least in part in response to electrical stimulation via the reference line and release line. Information state of the cell is non-volatilely stored via the respective physical position of the nanotube switching element. Under another embodiment, a circuit array includes a plurality of cells arranged in an organization of words, each word having a plurality of bits. Each cell is responsive to a bit line, word line, and reference line. Each word line and bit line are shared among a plurality of cells. Each cell is selectable via the activation of the bit line and word line. Each cell includes a field effect transistor and a nanotube switching element. Each nanotube switching element includes a nanotube article positioned between a set electrode and a release electrode. The set electrode may be electrically stimulated to electro-statically attract the nanotube article into contact with the set electrode and the release electrode may be electrically stimulated to electro-statically attract the nanotube article out of contact with the set electrode. Information state of the cell is non-volatilely stored via the respective physical position of the nanotube switching element. Cells are arranged as pairs with the nanotube switching elements of the pair being cross coupled so that the set electrode of one nanotube switching element is coupled to the release electrode of the other and the release electrode of the one nanotube switching element being coupled to the set electrode of the other. The nanotube articles are coupled to the reference line, and the source of one field effect transistor of a pair is coupled to the set electrode to one of the two nanotube switching elements and the source of the other field effect transistor of the pair is coupled to the release electrode to the one of the two nanotube switching elements.

7. 发明申请

US20050062070A1 Field effect devices having a source controlled via a nanotube switching element 有权
标题翻译：通过纳米管开关元件控制源极的场效应器件
公开(公告)号：US20050062070A1
公开(公告)日：2005-03-24
申请号：US10864045
申请日：2004-06-09
申请人： Claude Bertin , Thomas Rueckes , Brent Segal , Frank Guo
发明人： Claude Bertin , Thomas Rueckes , Brent Segal , Frank Guo
IPC分类号： G11C7/06 , G11C8/02 , G11C11/00 , G11C11/50 , G11C13/02 , G11C16/02 , G11C16/04 , G11C17/16 , G11C23/00 , H01H59/00 , H01J1/62 , H01L20060101 , H01L21/336 , H01L21/82 , H01L21/8246 , H01L27/112 , H01L27/115 , H01L27/28 , H01L29/06 , H01L29/423 , H01L29/739 , H01L29/745 , H01L29/76 , H01L51/00 , H01L51/05 , H01L51/30 , H03K17/16
CPC分类号： H01L29/78 , B82Y10/00 , B82Y99/00 , G11C7/065 , G11C13/025 , G11C16/0416 , G11C17/16 , G11C17/165 , G11C23/00 , G11C2213/16 , G11C2213/17 , G11C2213/79 , H01H1/0094 , H01L27/10 , H01L27/1052 , H01L27/112 , H01L27/11206 , H01L27/115 , H01L27/286 , H01L29/0665 , H01L29/0673 , H01L29/42324 , H01L51/0048 , H01L51/0052 , H01L51/0508 , Y10S977/708 , Y10S977/724 , Y10S977/742 , Y10S977/762 , Y10S977/936 , Y10S977/938 , Y10S977/94 , Y10S977/943
摘要： Field effect devices having a source controlled via a nanotube switching element. Under one embodiment, a field effect device includes a source region and a drain region of a first semiconductor type and a channel region disposed therebetween of a second semiconductor type. The drain region is connected to a corresponding terminal. A gate structure is disposed over the channel region and connected to a corresponding terminal. A nanotube switching element is responsive to a first control terminal and a second control terminal and is electrically positioned in series between the source region and a terminal corresponding to the source region. The nanotube switching element is electromechanically operable to one of an open and closed state to thereby open or close an electrical communication path between the source region and its corresponding terminal. When the nanotube switching element is in the closed state, the channel conductivity and operation of the device is responsive to electrical stimulus at the terminals corresponding to the source and drain regions and the gate structure.
摘要翻译：通过纳米管开关元件控制源极的场效应器件。在一个实施例中，场效应器件包括第一半导体类型的源极区域和漏极区域以及设置在第二半导体类型之间的沟道区域。漏极区域连接到相应的端子。栅极结构设置在沟道区域上并连接到相应的端子。纳米管开关元件响应于第一控制端子和第二控制端子，并且电源定位在源极区域和与源极区域对应的端子之间。纳米管开关元件在机电上可操作为打开和关闭状态之一，从而打开或关闭源极区域与其对应端子之间的电连通路径。当纳米管开关元件处于闭合状态时，器件的沟道导电性和操作响应于对应于源极和漏极区域以及栅极结构的端子处的电刺激。

8. 发明申请

US20070296019A1 Non-volatile electromechanical field effect devices and circuits using same and methods of forming same 有权
公开(公告)号：US20070296019A1
公开(公告)日：2007-12-27
申请号：US11731946
申请日：2007-04-02
申请人： Claude Bertin , Thomas Rueckes , Brent Segal , Bernhard Vogeli , Darren Brock , Venkatachalam Jaiprakash
发明人： Claude Bertin , Thomas Rueckes , Brent Segal , Bernhard Vogeli , Darren Brock , Venkatachalam Jaiprakash
IPC分类号： H01L29/788
CPC分类号： H01L29/78 , B82Y10/00 , B82Y99/00 , G11C7/065 , G11C13/025 , G11C16/0416 , G11C17/16 , G11C17/165 , G11C23/00 , G11C2213/16 , G11C2213/17 , G11C2213/79 , H01H1/0094 , H01L27/10 , H01L27/1052 , H01L27/112 , H01L27/11206 , H01L27/115 , H01L27/286 , H01L29/0665 , H01L29/0673 , H01L29/42324 , H01L51/0048 , H01L51/0052 , H01L51/0508 , Y10S977/708 , Y10S977/724 , Y10S977/742 , Y10S977/762 , Y10S977/936 , Y10S977/938 , Y10S977/94 , Y10S977/943
摘要： Under one aspect, a field effect device includes a gate, a source, and a drain, with a conductive channel between the source and the drain; and a nanotube switch having a corresponding control terminal, said nanotube switch being positioned to control electrical conduction through said conductive channel. Under another aspect, a field effect device includes a gate having a corresponding gate terminal; a source having a corresponding source terminal; a drain having a corresponding drain terminal; a control terminal; and a nanotube switching element positioned between one of the gate, source, and drain and its corresponding terminal and switchable, in response to electrical stimuli at the control terminal and at least one of the gate, source, and drain terminals, between a first non-volatile state that enables current flow between the source and the drain and a second non-volatile state that disables current flow between the source and the drain.

9. 发明授权

US07176505B2 Electromechanical three-trace junction devices 失效
标题翻译：机电三迹交界器件
公开(公告)号：US07176505B2
公开(公告)日：2007-02-13
申请号：US10802900
申请日：2004-03-17
申请人： Thomas Rueckes , Brent M. Segal , Claude Bertin
发明人： Thomas Rueckes , Brent M. Segal , Claude Bertin
IPC分类号： H01L27/10
CPC分类号： G11C11/56 , B82Y10/00 , G11C13/025 , G11C23/00 , G11C2213/77 , H01H1/0094 , Y10S977/742 , Y10S977/932 , Y10S977/936 , Y10S977/943
摘要： Three trace electromechanical circuits and methods of using same. A circuit includes first and second electrically conductive elements with a nanotube ribbon (or other electromechanical elements) disposed therebetween. An insulative layer is disposed on one of the first and second conductive elements. The nanotube ribbon is movable toward at least one of the first and second electrically conductive elements in response to electrical stimulus applied to at least one of the first and second electrically conductive elements and the nanotube ribbon. Such circuits may be formed into arrays of cells. One of the conductive elements may be used to create an attractive force to cause the nanotube ribbon to contact a conductive element, and the other of the conductive elements may be used to create an attractive force to pull the nanotube ribbon from contact with the contacted conductive element. The electrically conductive traces may be aligned or unaligned with one another.
摘要翻译：三轨迹机电回路及其使用方法。电路包括第一和第二导电元件，其间设置有纳米管带（或其他机电元件）。绝缘层设置在第一和第二导电元件之一上。响应于施加到第一和第二导电元件和纳米管带中的至少一个的电刺激，纳米管带可朝着第一和第二导电元件中的至少一个移动。这样的电路可以形成为电池阵列。可以使用导电元件之一来产生引导纳米管带与导电元件接触的吸引力，并且另一导电元件可用于产生吸引力以将纳米管带从接触导电元件。导电迹线可以彼此对准或不对准。

10. 发明申请

US20070020859A1 Method of making non-volatile field effect devices and arrays of same 审中-公开
标题翻译：制造非易失性场效应器件及其阵列的方法
公开(公告)号：US20070020859A1
公开(公告)日：2007-01-25
申请号：US11527127
申请日：2006-09-26
申请人： Claude Bertin , Thomas Rueckes , Brent Segal
发明人： Claude Bertin , Thomas Rueckes , Brent Segal
IPC分类号： H01L21/8234
CPC分类号： H01L29/78 , B82Y10/00 , B82Y99/00 , G11C7/065 , G11C13/025 , G11C16/0416 , G11C17/16 , G11C17/165 , G11C23/00 , G11C2213/16 , G11C2213/17 , G11C2213/79 , H01H1/0094 , H01L27/10 , H01L27/1052 , H01L27/112 , H01L27/11206 , H01L27/115 , H01L27/286 , H01L29/0665 , H01L29/0673 , H01L29/42324 , H01L51/0048 , H01L51/0052 , H01L51/0508 , Y10S977/708 , Y10S977/724 , Y10S977/742 , Y10S977/762 , Y10S977/936 , Y10S977/938 , Y10S977/94 , Y10S977/943
摘要： Methods of making non-volatile field effect devices and arrays of same. Under one embodiment, a method of making a non-volatile field effect device includes providing a substrate with a field effect device formed therein. The field effect device includes a source, drain and gate with a field-modulatable channel between the source and drain. An electromechanically-deflectable, nanotube switching element is formed over the field effect device. Terminals and corresponding interconnect are provided to correspond to each of the source, drain and gate such that the nanotube switching element is electrically positioned between one of the source, drain and gate and its corresponding terminal, and such that the others of said source, drain and gate are directly connected to their corresponding terminals.
摘要翻译：制造非易失性场效应器件及其阵列的方法。在一个实施例中，制造非易失性场效应器件的方法包括提供其中形成有场效应器件的衬底。场效应器件包括在源极和漏极之间具有场可调通道的源极，漏极和栅极。在场效应器件上形成机电偏转的纳米管开关元件。提供端子和相应的互连件以对应于源极，漏极和栅极中的每一个，使得纳米管开关元件电气地定位在源极，漏极和栅极之间及其对应的端子之间，并且使得其他源极，漏极并且门直接连接到其相应的端子。

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