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1. 发明授权

US07781862B2 Two-terminal nanotube devices and systems and methods of making same 有权
标题翻译：两端纳米管装置及其制造方法
公开(公告)号：US07781862B2
公开(公告)日：2010-08-24
申请号：US11280786
申请日：2005-11-15
申请人： Claude L. Bertin , Mitchell Meinhold , Steven L. Konsek , Thomas Ruckes , Max Strasburg , Frank Guo , X. M. Henry Huang , Ramesh Sivarajan
发明人： Claude L. Bertin , Mitchell Meinhold , Steven L. Konsek , Thomas Ruckes , Max Strasburg , Frank Guo , X. M. Henry Huang , Ramesh Sivarajan
IPC分类号： G11C11/56 , G11C5/00 , H01L29/00
CPC分类号： H01L27/112 , B82Y10/00 , G11C13/0002 , G11C13/025 , G11C17/16 , G11C17/165 , G11C2213/19 , G11C2213/77 , G11C2213/79 , H01L27/1052 , Y10S977/943
摘要： A two terminal switching device includes first and second conductive terminals and a nanotube article. The article has at least one nanotube, and overlaps at least a portion of each of the first and second terminals. The device also includes a stimulus circuit in electrical communication with at least one of the first and second terminals. The circuit is capable of applying first and second electrical stimuli to at least one of the first and second terminal(s) to change the relative resistance of the device between the first and second terminals between a relatively high resistance and a relatively low resistance. The relatively high resistance between the first and second terminals corresponds to a first state of the device, and the relatively low resistance between the first and second terminals corresponds to a second state of the device.
摘要翻译：二端开关器件包括第一和第二导电端子和纳米管制品。该制品具有至少一个纳米管，并且与第一和第二端子中的每一个的至少一部分重叠。该装置还包括与第一和第二端子中的至少一个电连通的激励电路。该电路能够将第一和第二电刺激施加到第一和第二端子中的至少一个，以在相对较高的电阻和相对低的电阻之间改变第一和第二端子之间的器件的相对电阻。第一和第二端子之间的相对高的电阻对应于器件的第一状态，并且第一和第二端子之间的相对较低的电阻对应于器件的第二状态。

2. 发明授权

US07394687B2 Non-volatile-shadow latch using a nanotube switch 有权
标题翻译：使用纳米管开关的非易失性阴影锁存器
公开(公告)号：US07394687B2
公开(公告)日：2008-07-01
申请号：US11280599
申请日：2005-11-15
申请人： Claude L. Bertin , Frank Guo , Thomas Ruckes , Steven L. Konsek , Mitchell Meinhold , Max Strasburg , Ramesh Sivarajan , X. M. H. Huang
发明人： Claude L. Bertin , Frank Guo , Thomas Ruckes , Steven L. Konsek , Mitchell Meinhold , Max Strasburg , Ramesh Sivarajan , X. M. H. Huang
IPC分类号： G11C11/34
CPC分类号： G11C13/025 , B82Y10/00 , G11C13/0033 , G11C14/00 , Y10S977/943
摘要： A non-volatile memory cell includes a volatile storage device that stores a corresponding logic state in response to electrical stimulus; and a shadow memory device coupled to the volatile storage device. The shadow memory device receives and stores the corresponding logic state in response to electrical stimulus. The shadow memory device includes a non-volatile nanotube switch that stores the corresponding state of the shadow device.
摘要翻译：非易失性存储单元包括：易失性存储装置，其响应于电刺激而存储对应的逻辑状态; 以及耦合到所述易失性存储装置的影子存储装置。影子存储装置响应于电刺激而接收和存储对应的逻辑状态。影子存储装置包括存储影子装置的相应状态的非易失性纳米管开关。

3. 发明申请

US20080012047A1 Two-terminal nanotube devices and systems and methods of making same 有权
标题翻译：两端纳米管装置及其制造方法
公开(公告)号：US20080012047A1
公开(公告)日：2008-01-17
申请号：US11280786
申请日：2005-11-15
申请人： Claude Bertin , Mitchell Meinhold , Steven Konsek , Thomas Ruckes , Max Strasburg , Frank Guo , X. M. Huang , Ramesh Sivarajan
发明人： Claude Bertin , Mitchell Meinhold , Steven Konsek , Thomas Ruckes , Max Strasburg , Frank Guo , X. M. Huang , Ramesh Sivarajan
IPC分类号： H01L29/76 , H01L29/745
CPC分类号： H01L27/112 , B82Y10/00 , G11C13/0002 , G11C13/025 , G11C17/16 , G11C17/165 , G11C2213/19 , G11C2213/77 , G11C2213/79 , H01L27/1052 , Y10S977/943
摘要： A two terminal switching device includes first and second conductive terminals and a nanotube article. The article has at least one nanotube, and overlaps at least a portion of each of the first and second terminals. The device also includes a stimulus circuit in electrical communication with at least one of the first and second terminals. The circuit is capable of applying first and second electrical stimuli to at least one of the first and second terminal(s) to change the relative resistance of the device between the first and second terminals between a relatively high resistance and a relatively low resistance. The relatively high resistance between the first and second terminals corresponds to a first state of the device, and the relatively low resistance between the first and second terminals corresponds to a second state of the device.
摘要翻译：二端开关器件包括第一和第二导电端子和纳米管制品。该制品具有至少一个纳米管，并且与第一和第二端子中的每一个的至少一部分重叠。该装置还包括与第一和第二端子中的至少一个电连通的激励电路。电路能够将第一和第二电刺激施加到第一和第二端子中的至少一个，以在相对较高电阻和相对较低电阻之间改变第一和第二端子之间的器件的相对电阻。第一和第二端子之间的相对高的电阻对应于器件的第一状态，并且第一和第二端子之间的相对较低的电阻对应于器件的第二状态。

4. 发明授权

US08471238B2 Light emitters using nanotubes and methods of making same 有权
标题翻译：使用纳米管的发光体及其制作方法
公开(公告)号：US08471238B2
公开(公告)日：2013-06-25
申请号：US11227468
申请日：2005-09-15
申请人： Jonathan W. Ward , Mitchell Meinhold , Claude L. Bertin , Benjamin Schlatka , Brent M. Segal , Thomas Ruckes
发明人： Jonathan W. Ward , Mitchell Meinhold , Claude L. Bertin , Benjamin Schlatka , Brent M. Segal , Thomas Ruckes
IPC分类号： H01L29/06
CPC分类号： H01K1/04 , B82Y10/00 , B82Y20/00 , H01L51/0048 , H01L51/0052
摘要： Light emitters using nanotubes and methods of making same. A light emitter includes a nanotube article in electrical communication with a first and a second contact, a substrate having a predefined region with a relatively low thermal conductivity said region in predefined physical relation to said nanotube article; and a stimulus circuit in electrical communication with the first and second contacts. The stimulus circuit provides electrical stimulation sufficient to induce light emission from the nanotube article in the proximity of the predefined region. The predefined region is a channel formed in the substrate or a region of material with relatively low thermal conductivity. The light emitter can be integrated with semiconductor circuits including CMOS circuits. The light emitter can be integrated into optical driver circuits (on- and off-chip drivers) and opto-isolators.
摘要翻译：使用纳米管的发光体及其制作方法。光发射器包括与第一和第二接触电连通的纳米管制品，具有预定区域的基底，所述预定区域具有相对于所述纳米管制品预定的物理关系的相对低导热性的所述区域; 以及与第一和第二触点电连通的激励电路。刺激电路提供足以在预定区域附近从纳米管制品引发光发射的电刺激。预定区域是形成在衬底中的通道或具有相对较低热导率的材料区域。光发射器可以与包括CMOS电路的半导体电路集成。光发射器可以集成到光驱动器电路（片上和片外驱动器）和光隔离器中。

5. 发明申请

US20080036356A1 Light emitters using nanotubes and methods of making same 有权
标题翻译：使用纳米管的发光体及其制作方法
公开(公告)号：US20080036356A1
公开(公告)日：2008-02-14
申请号：US11227468
申请日：2005-09-15
申请人： Jonathan W. Ward , Mitchell Meinhold , Claude L. Bertin , Benjamin Schlatka , Brent M. Segal , Thomas Ruckes
发明人： Jonathan W. Ward , Mitchell Meinhold , Claude L. Bertin , Benjamin Schlatka , Brent M. Segal , Thomas Ruckes
IPC分类号： H01K1/02
CPC分类号： H01K1/04 , B82Y10/00 , B82Y20/00 , H01L51/0048 , H01L51/0052
摘要： Light emitters using nanotubes and methods of making same. A light emitter includes a nanotube article in electrical communication with a first and a second contact, a substrate having a predefined region with a relatively low thermal conductivity said region in predefined physical relation to said nanotube article; and a stimulus circuit in electrical communication with the first and second contacts. The stimulus circuit provides electrical stimulation sufficient to induce light emission from the nanotube article in the proximity of the predefined region. The predefined region is a channel formed in the substrate or a region of material with relatively low thermal conductivity. The light emitter can be integrated with semiconductor circuits including CMOS circuits. The light emitter can be integrated into optical driver circuits (on- and off-chip drivers) and opto-isolators.
摘要翻译：使用纳米管的发光体及其制作方法。光发射器包括与第一和第二接触电连通的纳米管制品，具有预定区域的基底，所述预定区域具有相对于所述纳米管制品预定的物理关系的相对低导热性的所述区域; 以及与第一和第二触点电连通的激励电路。刺激电路提供足以在预定区域附近从纳米管制品引发光发射的电刺激。预定区域是形成在衬底中的通道或具有相对较低热导率的材料区域。光发射器可以与包括CMOS电路的半导体电路集成。光发射器可以集成到光驱动器电路（片上和片外驱动器）和光隔离器中。

6. 发明申请

US20080231413A1 RESISTIVE ELEMENTS USING CARBON NANOTUBES 有权
标题翻译：使用碳纳米管的电阻元件
公开(公告)号：US20080231413A1
公开(公告)日：2008-09-25
申请号：US12111442
申请日：2008-04-29
申请人： Claude L. Bertin , Thomas Ruckes , Brent M. Segal , Jonathan W. Ward
发明人： Claude L. Bertin , Thomas Ruckes , Brent M. Segal , Jonathan W. Ward
IPC分类号： H01C10/00
CPC分类号： H01C7/06 , H01C7/003 , H01C7/005 , H01C7/006 , H01C10/306 , H01C17/0652 , H01C17/232 , H01C17/283 , H01L28/22
摘要： Resistive elements include a patterned region of nanofabric having a predetermined area, where the nanofabric has a selected sheet resistance; and first and second electrical contacts contacting the patterned region of nanofabric and in spaced relation to each other. The resistance of the element between the first and second electrical contacts is determined by the selected sheet resistance of the nanofabric, the area of nanofabric, and the spaced relation of the first and second electrical contacts. The bulk resistance is tunable.
摘要翻译：电阻元件包括具有预定面积的纳米纤维的图案化区域，其中纳米纤维具有选定的薄层电阻; 以及第一和第二电触头接触纳米尺寸的图案化区域并且彼此间隔开。元件在第一和第二电触点之间的电阻由所选择的纳米尺寸的薄层电阻，纳米的面积以及第一和第二电触头间隔的关系来确定。体积电阻是可调谐的。

7. 发明授权

US07245520B2 Random access memory including nanotube switching elements 有权
标题翻译：随机存取存储器包括纳米管开关元件
公开(公告)号：US07245520B2
公开(公告)日：2007-07-17
申请号：US11231213
申请日：2005-09-20
申请人： Claude L. Bertin , Thomas Ruckes , Brent M. Segal
发明人： Claude L. Bertin , Thomas Ruckes , Brent M. Segal
IPC分类号： G11C11/00 , G11C11/50 , G11C7/10 , B82B1/00
CPC分类号： G11C13/025 , B82Y10/00 , G11C14/00 , G11C23/00 , Y10S977/732 , Y10S977/733 , Y10S977/936 , Y10S977/938 , Y10S977/943
摘要： A random access memory cell includes first and second nanotube switching elements and an electronic memory with cross-coupled first and second inverters. Each nanotube switching element includes a nanotube channel element having at least one electrically conductive nanotube, and a set electrode and a release electrode disposed in relation to the nanotube channel element to controllably form and unform an electrically conductive channel between a channel electrode and an output node. Input nodes of the first and second inverters are coupled to the set electrodes and the output nodes of the first and second nanotube switching elements. The cell can operate as a normal electronic memory, or in a shadow memory or store mode to transfer the electronic memory state to the nanotube switching elements. The device may later be operated in a recall mode to transfer the state of the nanotube switching elements to the electronic memory.
摘要翻译：随机存取存储单元包括第一和第二纳米管切换元件以及具有交叉耦合的第一和第二反相器的电子存储器。每个纳米管开关元件包括具有至少一个导电纳米管的纳米管通道元件，以及相对于纳米管通道元件设置的设定电极和释放电极，以可控制地形成和取消通道电极与输出节点之间的导电通道。第一和第二反相器的输入节点耦合到第一和第二纳米管切换元件的设定电极和输出节点。电池可以作为正常的电子存储器，或者在阴影存储器或存储模式下操作，以将电子存储器状态传送到纳米管开关元件。该装置可以稍后在召回模式下操作以将纳米管开关元件的状态转移到电子存储器。

8. 发明授权

US07365632B2 Resistive elements using carbon nanotubes 有权
标题翻译：使用碳纳米管的电阻元件
公开(公告)号：US07365632B2
公开(公告)日：2008-04-29
申请号：US11230876
申请日：2005-09-20
申请人： Claude L. Bertin , Thomas Ruckes , Brent M. Segal , Jonathan W. Ward
发明人： Claude L. Bertin , Thomas Ruckes , Brent M. Segal , Jonathan W. Ward
IPC分类号： H01C10/00
CPC分类号： H01C7/06 , H01C7/003 , H01C7/005 , H01C7/006 , H01C10/306 , H01C17/0652 , H01C17/232 , H01C17/283 , H01L28/22
摘要： Resistive elements include a patterned region of nanofabric having a predetermined area, where the nanofabric has a selected sheet resistance; and first and second electrical contacts contacting the patterned region of nanofabric and in spaced relation to each other. The resistance of the element between the first and second electrical contacts is determined by the selected sheet resistance of the nanofabric, the area of nanofabric, and the spaced relation of the first and second electrical contacts. The bulk resistance is tunable.
摘要翻译：电阻元件包括具有预定面积的纳米纤维的图案化区域，其中纳米纤维具有选定的薄层电阻; 以及第一和第二电触头接触纳米尺寸的图案化区域并且彼此间隔开。元件在第一和第二电触点之间的电阻由所选择的纳米尺寸的薄层电阻，纳米的面积以及第一和第二电触头间隔的关系来确定。体积电阻是可调谐的。

9. 发明申请

US20070236325A1 RESISTIVE ELEMENTS USING CARBON NANOTUBES 有权
标题翻译：使用碳纳米管的电阻元件
公开(公告)号：US20070236325A1
公开(公告)日：2007-10-11
申请号：US11230876
申请日：2005-09-20
申请人： Claude Bertin , Thomas Ruckes , Brent Segal , Jonathan Ward
发明人： Claude Bertin , Thomas Ruckes , Brent Segal , Jonathan Ward
IPC分类号： H01C10/00
CPC分类号： H01C7/06 , H01C7/003 , H01C7/005 , H01C7/006 , H01C10/306 , H01C17/0652 , H01C17/232 , H01C17/283 , H01L28/22
摘要： Resistive elements include a patterned region of nanofabric having a predetermined area, where the nanofabric has a selected sheet resistance; and first and second electrical contacts contacting the patterned region of nanofabric and in spaced relation to each other. The resistance of the element between the first and second electrical contacts is determined by the selected sheet resistance of the nanofabric, the area of nanofabric, and the spaced relation of the first and second electrical contacts. The bulk resistance is tunable.
摘要翻译：电阻元件包括具有预定面积的纳米纤维的图案化区域，其中纳米纤维具有选定的薄层电阻; 以及第一和第二电触头接触纳米尺寸的图案化区域并且彼此间隔开。元件在第一和第二电触点之间的电阻由所选择的纳米尺寸的薄层电阻，纳米的面积以及第一和第二电触头间隔的关系来确定。体积电阻是可调谐的。

10. 发明申请

US20070127285A1 RANDOM ACCESS MEMORY INCLUDING NANOTUBE SWITCHING ELEMENTS 有权
标题翻译：随机存取存储器，包括纳米管开关元件
公开(公告)号：US20070127285A1
公开(公告)日：2007-06-07
申请号：US11231213
申请日：2005-09-20
申请人： Claude Bertin , Thomas Ruckes , Brent Segal
发明人： Claude Bertin , Thomas Ruckes , Brent Segal
IPC分类号： G11C11/00
CPC分类号： G11C13/025 , B82Y10/00 , G11C14/00 , G11C23/00 , Y10S977/732 , Y10S977/733 , Y10S977/936 , Y10S977/938 , Y10S977/943
摘要： Random access memory including nanotube switching elements. A memory cell includes first and second nanotube switching elements and an electronic memory. Each nanotube switching element includes an output node, a nanotube channel element having at least one electrically conductive nanotube, and a control structure having a set electrode and a release electrode disposed in relation to the nanotube channel element to controllably form and unform an electrically conductive channel between said channel electrode and said output node. The electronic memory has cross-coupled first and second inverters. The input node of the first inverter is coupled to the set electrode of the first nanotube switching element and to the output node of the second nanotube switching element. The input node of the of the second inverter is coupled to the set electrode of the second nanotube switching element and to the output node of the first nanotube switching element; and the channel electrode is coupled to a channel voltage line. The release electrode of the first nanotube switching element is coupled to the release electrode of the second nanotube switching element and wherein both release electrodes are coupled to a release line. The cell can operate as a normal electronic memory, or can operate in a shadow memory or store mode (e.g., when power is interrupted) to transfer the electronic memory state to the nanotube switching elements. The device may later be operated in a recall mode where the state of the nanotube switching elements may be transferred to the electronic memory.
摘要翻译：随机存取存储器包括纳米管开关元件。存储单元包括第一和第二纳米管切换元件和电子存储器。每个纳米管开关元件包括输出节点，具有至少一个导电纳米管的纳米管通道元件和具有相对于纳米管通道元件设置的设定电极和释放电极的控制结构，以可控地形成和取消导电通道在所述通道电极和所述输出节点之间。电子存储器具有交叉耦合的第一和第二逆变器。第一反相器的输入节点耦合到第一纳米管开关元件的设定电极和第二纳米管开关元件的输出节点。第二反相器的输入节点耦合到第二纳米管开关元件的设定电极和第一纳米管开关元件的输出节点; 并且沟道电极耦合到沟道电压线。第一纳米管开关元件的释放电极耦合到第二纳米管开关元件的释放电极，并且其中两个释放电极耦合到释放线。电池可以作为普通电子存储器工作，或者可以在阴影存储器或存储模式（例如，当电力中断时）操作以将电子存储器状态传送到纳米管开关元件。该装置可以稍后在调谐模式下操作，其中纳米管切换元件的状态可以被传送到电子存储器。

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