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1. 发明授权

US08369141B2 Adaptive estimation of memory cell read thresholds 有权
公开(公告)号：US08369141B2
公开(公告)日：2013-02-05
申请号：US12522175
申请日：2008-03-11
申请人： Naftali Sommer , Ofir Shalvi , Uri Perlmutter , Oren Golov , Eyal Gurgi , Micha Anholt , Dotan Sokolov
发明人： Naftali Sommer , Ofir Shalvi , Uri Perlmutter , Oren Golov , Eyal Gurgi , Micha Anholt , Dotan Sokolov
IPC分类号： G11C11/34 , G11C16/04
CPC分类号： G11C16/04 , G11C8/20 , G11C11/5642 , G11C16/20 , G11C16/28 , G11C2211/5634
摘要： A method for operating a memory (28) that includes a plurality of analog memory cells (32) includes storing data in the memory by writing first storage values to the cells. Second storage values are read from the cells, and a Cumulative Distribution Function (CDF) of the second storage values is estimated. The estimated CDF is processed so as to compute one or more thresholds. A memory access operation is performed on the cells using the one or more thresholds.

2. 发明授权

US08208304B2 Storage at M bits/cell density in N bits/cell analog memory cell devices, M>N 有权
标题翻译：在N位/单元模拟存储单元器件中以M位/单元密度存储，M> N
公开(公告)号：US08208304B2
公开(公告)日：2012-06-26
申请号：US12618732
申请日：2009-11-15
申请人： Ofir Shalvi , Naftali Sommer , Uri Perlmutter , Dotan Sokolov
发明人： Ofir Shalvi , Naftali Sommer , Uri Perlmutter , Dotan Sokolov
IPC分类号： G11C16/04
CPC分类号： G06F11/1068 , G11C11/5628 , G11C11/5642 , G11C16/26 , G11C27/005 , G11C2211/5641
摘要： A method for data storage includes accepting data for storage in a memory that includes multiple analog memory cells and supports a set of built-in programming commands. Each of the programming commands programs a respective page, selected from a group of N pages, in a subset of the memory cells. The subset of the memory cells is programmed to store M pages of the data, M>N, by performing a sequence of the programming commands drawn only from the set.
摘要翻译：一种用于数据存储的方法包括接收用于存储在包括多个模拟存储器单元的存储器中的数据，并且支持一组内置的编程命令。每个编程命令在存储器单元的子集中编写从一组N页中选择的相应页面。存储器单元的子集被编程为通过执行仅从集合中绘制的编程命令的序列来存储数据的M页M> N。

3. 发明授权

US08228701B2 Selective activation of programming schemes in analog memory cell arrays 有权
标题翻译：在模拟存储单元阵列中选择性地激活编程方案
公开(公告)号：US08228701B2
公开(公告)日：2012-07-24
申请号：US12714501
申请日：2010-02-28
申请人： Dotan Sokolov , Naftali Sommer , Uri Perlmutter , Ofir Shalvi
发明人： Dotan Sokolov , Naftali Sommer , Uri Perlmutter , Ofir Shalvi
IPC分类号： G11C27/00
CPC分类号： G11C27/005 , G11C7/02 , G11C11/5628 , G11C16/3418
摘要： A method for data storage includes defining a first programming scheme that programs a group of analog memory cells while reducing interference caused by at least one memory cell that neighbors the group, and a second programming scheme that programs the group of the analog memory cells and does not reduce all of the interference reduced by the first programming scheme. One of the first and second programming schemes is selected based on a criterion defined with respect to the analog memory cells. Data is stored in the group of the analog memory cells using the selected programming scheme.
摘要翻译：一种用于数据存储的方法包括：定义第一编程方案，其编程一组模拟存储器单元，同时减少由与该组相邻的至少一个存储器单元引起的干扰;以及第二编程方案，其对该组模拟存储器单元进行编程不能减少第一编程方案减少的所有干扰。基于针对模拟存储器单元定义的标准来选择第一和第二编程方案之一。使用所选择的编程方案将数据存储在模拟存储器单元的组中。

4. 发明申请

US20100131827A1 MEMORY DEVICE WITH INTERNAL SIGNAP PROCESSING UNIT 有权
标题翻译：具有内部信号处理单元的存储器件
公开(公告)号：US20100131827A1
公开(公告)日：2010-05-27
申请号：US12597494
申请日：2008-04-16
申请人： Dotan Sokolov , Naftali Sommer , Ofir Shalvi , Uri Perlmutter
发明人： Dotan Sokolov , Naftali Sommer , Ofir Shalvi , Uri Perlmutter
IPC分类号： G11C29/52 , G11C27/00 , G06F12/00 , G06F11/10 , G06F12/16
CPC分类号： G06F11/1072 , G06F11/1044 , G06F11/1048 , G06F11/1076 , G06F12/00 , G11C11/56 , G11C29/50004 , G11C29/52 , G11C2029/5004
摘要： A method for operating a memory (36) includes storing data in a plurality of analog memory cells (40) that are fabricated on a first semiconductor die by writing input storage values to a group of the analog memory cells. After storing the data, multiple output storage values are read from each of the analog memory cells in the group using respective, different threshold sets of read thresholds, thus providing multiple output sets of the output storage values corresponding respectively to the threshold sets. The multiple output sets of the output storage values are preprocessed by circuitry (48) that is fabricated on the first semiconductor die, to produce preprocessed data. The preprocessed data is provided to a memory controller (28), which is fabricated on a second semiconductor die that is different from the first semiconductor die, so as to enable the memory controller to reconstruct the data responsively to the preprocessed data.
摘要翻译：一种用于操作存储器（36）的方法包括：通过将输入存储值写入到一组模拟存储器单元中，将数据存储在制造在第一半导体管芯上的多个模拟存储单元（40）中。在存储数据之后，使用相应的不同的阈值集合读取组中每个模拟存储器单元的多个输出存储值，从而提供分别对应于阈值集合的输出存储值的多个输出组。输出存储值的多个输出组由在第一半导体管芯上制造的电路（48）预处理，以产生预处理的数据。预处理数据被提供给存储器控制器（28），该存储器控制器（28）被制造在与第一半导体管芯不同的第二半导体管芯上，以使得存储器控制器可以响应于预处理的数据来重建数据。

5. 发明授权

US08547742B2 Storage at M bits/cell density in N bits/cell analog memory cell devices, M>N 有权
公开(公告)号：US08547742B2
公开(公告)日：2013-10-01
申请号：US13449326
申请日：2012-04-18
申请人： Ofir Shalvi , Naftali Sommer , Uri Perlmutter , Dotan Sokolov
发明人： Ofir Shalvi , Naftali Sommer , Uri Perlmutter , Dotan Sokolov
IPC分类号： G11C16/04
CPC分类号： G06F11/1068 , G11C11/5628 , G11C11/5642 , G11C16/26 , G11C27/005 , G11C2211/5641
摘要： A method for data storage includes accepting data for storage in a memory that includes multiple analog memory cells and supports a set of built-in programming commands. Each of the programming commands programs a respective page, selected from a group of N pages, in a subset of the memory cells. The subset of the memory cells is programmed to store M pages of the data, M>N, by performing a sequence of the programming commands drawn only from the set.

6. 发明申请

US20100091535A1 ADAPTIVE ESTIMATION OF MEMORY CELL READ THRESHOLDS 有权
标题翻译：记忆体读取阈值的自适应估计
公开(公告)号：US20100091535A1
公开(公告)日：2010-04-15
申请号：US12522175
申请日：2008-03-11
申请人： Naftali Sommer , Ofir Shalvi , Uri Perlmutter , Oren Golov , Eyal Gurgi , Micha Anholt , Dotan Sokolov
发明人： Naftali Sommer , Ofir Shalvi , Uri Perlmutter , Oren Golov , Eyal Gurgi , Micha Anholt , Dotan Sokolov
IPC分类号： G11C27/00 , G11C7/00
CPC分类号： G11C16/04 , G11C8/20 , G11C11/5642 , G11C16/20 , G11C16/28 , G11C2211/5634
摘要： A method for operating a memory (28) that includes a plurality of analog memory cells (32) includes storing data in the memory by writing first storage values to the cells. Second storage values are read from the cells, and a Cumulative Distribution Function (CDF) of the second storage values is estimated. The estimated CDF is processed so as to compute one or more thresholds. A memory access operation is performed on the cells using the one or more thresholds.
摘要翻译：一种用于操作包括多个模拟存储单元（32）的存储器（28）的方法包括：通过向单元写入第一存储值来将数据存储在存储器中。从单元读取第二存储值，并且估计第二存储值的累积分布函数（CDF）。处理估计的CDF以计算一个或多个阈值。使用一个或多个阈值对单元执行存储器存取操作。

7. 发明申请

US20120201078A1 Storage at M bits/cell density in N bits/cell analog memory cell devices, M>N 有权
公开(公告)号：US20120201078A1
公开(公告)日：2012-08-09
申请号：US13449326
申请日：2012-04-18
申请人： Ofir Shalvi , Naftali Sommer , Uri Perlmutter , Dotan Sokolov
发明人： Ofir Shalvi , Naftali Sommer , Uri Perlmutter , Dotan Sokolov
IPC分类号： G11C16/10
CPC分类号： G06F11/1068 , G11C11/5628 , G11C11/5642 , G11C16/26 , G11C27/005 , G11C2211/5641
摘要： A method for data storage includes accepting data for storage in a memory that includes multiple analog memory cells and supports a set of built-in programming commands. Each of the programming commands programs a respective page, selected from a group of N pages, in a subset of the memory cells. The subset of the memory cells is programmed to store M pages of the data, M>N, by performing a sequence of the programming commands drawn only from the set.

8. 发明申请

US20090240872A1 MEMORY DEVICE WITH MULTIPLE-ACCURACY READ COMMANDS 有权
标题翻译：具有多个精度读取命令的存储器件
公开(公告)号：US20090240872A1
公开(公告)日：2009-09-24
申请号：US12405275
申请日：2009-03-17
申请人： Uri Perlmutter , Ofir Shalvi , Yoav Kasorla , Naftali Sommer , Dotan Sokolov
发明人： Uri Perlmutter , Ofir Shalvi , Yoav Kasorla , Naftali Sommer , Dotan Sokolov
IPC分类号： G06F12/00 , G06F12/02 , G11C11/34
CPC分类号： G11C8/08 , G11C11/5642 , G11C16/349 , G11C27/005 , G11C29/00 , G11C29/021 , G11C29/028 , G11C2211/5641
摘要： A method for data storage includes defining at least first and second read commands for reading storage values from analog memory cells. The first read command reads the storage values at a first accuracy, and the second read command reads the storage values at a second accuracy, which is finer than the first accuracy. A condition is evaluated with respect to a read operation that is to be performed over a given group of the memory cells. One of the first and second read commands is selected responsively to the evaluated condition. The storage values are read from the given group of the memory cells using the selected read command.
摘要翻译：一种用于数据存储的方法包括至少定义用于从模拟存储器单元读取存储值的第一和第二读取命令。第一读取命令以第一精度读取存储值，并且第二读取命令以比第一精度更精细的第二精度读取存储值。针对要在特定组的存储单元上执行的读取操作来评估条件。响应于评估条件选择第一和第二读取命令中的一个。使用所选择的读取命令从存储器单元的给定组中读取存储值。

9. 发明授权

US08879294B2 Selective activation of programming schemes in analog memory cell arrays 有权
标题翻译：在模拟存储单元阵列中选择性地激活编程方案
公开(公告)号：US08879294B2
公开(公告)日：2014-11-04
申请号：US13532700
申请日：2012-06-25
申请人： Dotan Sokolov , Naftali Sommer , Uri Perlmutter , Ofir Shalvi
发明人： Dotan Sokolov , Naftali Sommer , Uri Perlmutter , Ofir Shalvi
IPC分类号： G11C27/00 , G11C11/56 , G11C7/02 , G11C16/34
CPC分类号： G11C27/005 , G11C7/02 , G11C11/5628 , G11C16/3418
摘要： A method for data storage includes defining a first programming scheme that programs a group of analog memory cells while reducing interference caused by at least one memory cell that neighbors the group, and a second programming scheme that programs the group of the analog memory cells and does not reduce all of the interference reduced by the first programming scheme. One of the first and second programming schemes is selected based on a criterion defined with respect to the analog memory cells. Data is stored in the group of the analog memory cells using the selected programming scheme.
摘要翻译：一种用于数据存储的方法包括：定义第一编程方案，其编程一组模拟存储器单元，同时减少由与该组相邻的至少一个存储器单元引起的干扰;以及第二编程方案，其对该组模拟存储器单元进行编程不能减少第一编程方案减少的所有干扰。基于针对模拟存储器单元定义的标准来选择第一和第二编程方案之一。使用所选择的编程方案将数据存储在模拟存储器单元的组中。

10. 发明授权

US08717792B2 Selective activation of programming schemes in analog memory cell arrays 有权
公开(公告)号：US08717792B2
公开(公告)日：2014-05-06
申请号：US13532714
申请日：2012-06-25
申请人： Dotan Sokolov , Naftali Sommer , Uri Perlmutter , Ofir Shalvi
发明人： Dotan Sokolov , Naftali Sommer , Uri Perlmutter , Ofir Shalvi
IPC分类号： G11C27/00
CPC分类号： G11C27/005 , G11C7/02 , G11C11/5628 , G11C16/3418
摘要： A method for data storage includes defining a first programming scheme that programs a group of analog memory cells while reducing interference caused by at least one memory cell that neighbors the group, and a second programming scheme that programs the group of the analog memory cells and does not reduce all of the interference reduced by the first programming scheme. One of the first and second programming schemes is selected based on a criterion defined with respect to the analog memory cells. Data is stored in the group of the analog memory cells using the selected programming scheme.

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